KR101358529B1 - 전자부품용 적층 배선막 및 피복층 형성용 스퍼터링 타겟재 - Google Patents
전자부품용 적층 배선막 및 피복층 형성용 스퍼터링 타겟재 Download PDFInfo
- Publication number
- KR101358529B1 KR101358529B1 KR1020120086574A KR20120086574A KR101358529B1 KR 101358529 B1 KR101358529 B1 KR 101358529B1 KR 1020120086574 A KR1020120086574 A KR 1020120086574A KR 20120086574 A KR20120086574 A KR 20120086574A KR 101358529 B1 KR101358529 B1 KR 101358529B1
- Authority
- KR
- South Korea
- Prior art keywords
- coating layer
- film
- wiring film
- sputtering target
- conductive layer
- Prior art date
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- 238000005477 sputtering target Methods 0.000 title claims abstract description 22
- 239000011247 coating layer Substances 0.000 claims abstract description 71
- 239000010410 layer Substances 0.000 claims abstract description 35
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 239000000203 mixture Substances 0.000 claims abstract description 18
- 239000013077 target material Substances 0.000 claims abstract description 16
- 239000012535 impurity Substances 0.000 claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 5
- 239000002184 metal Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 150000003624 transition metals Chemical class 0.000 claims description 3
- 229910000838 Al alloy Inorganic materials 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 abstract description 27
- 238000007254 oxidation reaction Methods 0.000 abstract description 27
- 238000010438 heat treatment Methods 0.000 abstract description 26
- 229910001182 Mo alloy Inorganic materials 0.000 abstract description 23
- 239000010408 film Substances 0.000 description 112
- 239000000843 powder Substances 0.000 description 16
- 238000002438 flame photometric detection Methods 0.000 description 13
- 229910052759 nickel Inorganic materials 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 9
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910001257 Nb alloy Inorganic materials 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005245 sintering Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910017318 Mo—Ni Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 229910052720 vanadium Inorganic materials 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 230000002706 hydrostatic effect Effects 0.000 description 3
- 229910052757 nitrogen Chemical group 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910001000 nickel titanium Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000009689 gas atomisation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Computer Hardware Design (AREA)
- Physical Vapour Deposition (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
- Powder Metallurgy (AREA)
- Electrodes Of Semiconductors (AREA)
- Non-Insulated Conductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011179347 | 2011-08-19 | ||
JPJP-P-2011-179347 | 2011-08-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20130020569A KR20130020569A (ko) | 2013-02-27 |
KR101358529B1 true KR101358529B1 (ko) | 2014-02-05 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020120086574A KR101358529B1 (ko) | 2011-08-19 | 2012-08-08 | 전자부품용 적층 배선막 및 피복층 형성용 스퍼터링 타겟재 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP6016083B2 (zh) |
KR (1) | KR101358529B1 (zh) |
CN (1) | CN102956158B (zh) |
TW (1) | TWI443207B (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102109166B1 (ko) | 2013-01-15 | 2020-05-12 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 이를 구비하는 표시 기판 |
JP6361957B2 (ja) * | 2013-03-22 | 2018-07-25 | 日立金属株式会社 | 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 |
JP6349695B2 (ja) * | 2013-11-22 | 2018-07-04 | 大日本印刷株式会社 | フィルムセンサを作製するために用いられる積層体 |
CN105900216B (zh) * | 2014-02-07 | 2019-05-10 | 株式会社神户制钢所 | 平板显示器用配线膜 |
AT14576U1 (de) * | 2014-08-20 | 2016-01-15 | Plansee Se | Metallisierung für ein Dünnschichtbauelement, Verfahren zu deren Herstellung und Sputtering Target |
JP6681019B2 (ja) * | 2015-02-25 | 2020-04-15 | 日立金属株式会社 | 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 |
JP6823799B2 (ja) | 2015-10-01 | 2021-02-03 | 日立金属株式会社 | 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 |
JP6997945B2 (ja) * | 2016-12-27 | 2022-01-18 | 日立金属株式会社 | 積層配線膜およびその製造方法ならびにMo合金スパッタリングターゲット材 |
WO2018230867A1 (ko) | 2017-06-15 | 2018-12-20 | 주식회사 엘지화학 | 열전 모듈 |
CN114892134B (zh) * | 2022-05-23 | 2024-02-13 | 安泰天龙钨钼科技有限公司 | 一种钼合金管靶材及其制备方法和用途 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09307126A (ja) * | 1996-05-20 | 1997-11-28 | Fuji Electric Corp Res & Dev Ltd | 薄膜太陽電池およびその製造方法 |
JP2005079130A (ja) | 2003-08-28 | 2005-03-24 | Hitachi Metals Ltd | 薄膜配線層 |
KR100961418B1 (ko) | 2002-10-17 | 2010-06-09 | 아사히 가라스 가부시키가이샤 | 적층체, 배선이 부착되어 있는 기체, 유기 el 표시소자, 유기 el 표시 소자의 접속 단자 및 이들의 제조방법 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3859119B2 (ja) * | 2000-12-22 | 2006-12-20 | 日立金属株式会社 | 電子部品用薄膜配線 |
JP3649238B2 (ja) * | 2002-10-17 | 2005-05-18 | 旭硝子株式会社 | 積層体、配線付き基体、有機el表示素子、有機el表示素子の接続端子及びそれらの製造方法 |
JP4470147B2 (ja) * | 2003-09-16 | 2010-06-02 | 日立金属株式会社 | 薄膜配線層 |
JP4730662B2 (ja) * | 2005-03-02 | 2011-07-20 | 日立金属株式会社 | 薄膜配線層 |
WO2007029756A1 (ja) * | 2005-09-07 | 2007-03-15 | Asahi Glass Company, Limited | 補助配線付き基体およびその製造方法 |
JP4821670B2 (ja) * | 2007-03-26 | 2011-11-24 | 旭硝子株式会社 | 補助配線付き電極基体の製造方法 |
WO2010004783A1 (ja) * | 2008-07-07 | 2010-01-14 | 三井金属鉱業株式会社 | Al-Ni系合金配線電極材料 |
US20110198602A1 (en) * | 2008-11-05 | 2011-08-18 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Aluminum alloy film for display device, display device, and sputtering target |
JP5203908B2 (ja) * | 2008-12-04 | 2013-06-05 | 新日鉄住金マテリアルズ株式会社 | Ni−Mo系合金スパッタリングターゲット板 |
-
2012
- 2012-07-24 JP JP2012163187A patent/JP6016083B2/ja active Active
- 2012-08-08 KR KR1020120086574A patent/KR101358529B1/ko active IP Right Grant
- 2012-08-09 TW TW101128833A patent/TWI443207B/zh active
- 2012-08-16 CN CN201210293060.8A patent/CN102956158B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09307126A (ja) * | 1996-05-20 | 1997-11-28 | Fuji Electric Corp Res & Dev Ltd | 薄膜太陽電池およびその製造方法 |
KR100961418B1 (ko) | 2002-10-17 | 2010-06-09 | 아사히 가라스 가부시키가이샤 | 적층체, 배선이 부착되어 있는 기체, 유기 el 표시소자, 유기 el 표시 소자의 접속 단자 및 이들의 제조방법 |
JP2005079130A (ja) | 2003-08-28 | 2005-03-24 | Hitachi Metals Ltd | 薄膜配線層 |
Also Published As
Publication number | Publication date |
---|---|
CN102956158A (zh) | 2013-03-06 |
JP6016083B2 (ja) | 2016-10-26 |
KR20130020569A (ko) | 2013-02-27 |
JP2013060655A (ja) | 2013-04-04 |
TW201309822A (zh) | 2013-03-01 |
TWI443207B (zh) | 2014-07-01 |
CN102956158B (zh) | 2014-11-26 |
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