JP6016083B2 - 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 - Google Patents

電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 Download PDF

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Publication number
JP6016083B2
JP6016083B2 JP2012163187A JP2012163187A JP6016083B2 JP 6016083 B2 JP6016083 B2 JP 6016083B2 JP 2012163187 A JP2012163187 A JP 2012163187A JP 2012163187 A JP2012163187 A JP 2012163187A JP 6016083 B2 JP6016083 B2 JP 6016083B2
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Japan
Prior art keywords
coating layer
film
wiring film
sputtering target
electronic parts
Prior art date
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Active
Application number
JP2012163187A
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English (en)
Japanese (ja)
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JP2013060655A (ja
Inventor
村田　英夫
英夫 村田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Metals Ltd
Original Assignee
Hitachi Metals Ltd
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Filing date
Publication date
Application filed by Hitachi Metals Ltd filed Critical Hitachi Metals Ltd
Priority to JP2012163187A priority Critical patent/JP6016083B2/ja
Publication of JP2013060655A publication Critical patent/JP2013060655A/ja
Application granted granted Critical
Publication of JP6016083B2 publication Critical patent/JP6016083B2/ja
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Powder Metallurgy (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Non-Insulated Conductors (AREA)
JP2012163187A 2011-08-19 2012-07-24 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材 Active JP6016083B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2012163187A JP6016083B2 (ja) 2011-08-19 2012-07-24 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011179347 2011-08-19
JP2011179347 2011-08-19
JP2012163187A JP6016083B2 (ja) 2011-08-19 2012-07-24 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材

Publications (2)

Publication Number Publication Date
JP2013060655A JP2013060655A (ja) 2013-04-04
JP6016083B2 true JP6016083B2 (ja) 2016-10-26

Family

ID=47764907

Family Applications (1)

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JP2012163187A Active JP6016083B2 (ja) 2011-08-19 2012-07-24 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材

Country Status (4)

Country Link
JP (1) JP6016083B2 (zh)
KR (1) KR101358529B1 (zh)
CN (1) CN102956158B (zh)
TW (1) TWI443207B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102109166B1 (ko) 2013-01-15 2020-05-12 삼성디스플레이 주식회사 박막 트랜지스터 및 이를 구비하는 표시 기판
JP6361957B2 (ja) * 2013-03-22 2018-07-25 日立金属株式会社 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
JP6349695B2 (ja) * 2013-11-22 2018-07-04 大日本印刷株式会社 フィルムセンサを作製するために用いられる積層体
KR20160105490A (ko) * 2014-02-07 2016-09-06 가부시키가이샤 고베 세이코쇼 플랫 패널 디스플레이용 배선막
AT14576U1 (de) * 2014-08-20 2016-01-15 Plansee Se Metallisierung für ein Dünnschichtbauelement, Verfahren zu deren Herstellung und Sputtering Target
JP6681019B2 (ja) * 2015-02-25 2020-04-15 日立金属株式会社 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
JP6823799B2 (ja) 2015-10-01 2021-02-03 日立金属株式会社 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
JP6997945B2 (ja) * 2016-12-27 2022-01-18 日立金属株式会社 積層配線膜およびその製造方法ならびにＭｏ合金スパッタリングターゲット材
WO2018230867A1 (ko) 2017-06-15 2018-12-20 주식회사 엘지화학 열전 모듈
CN114892134B (zh) * 2022-05-23 2024-02-13 安泰天龙钨钼科技有限公司 一种钼合金管靶材及其制备方法和用途

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3455364B2 (ja) * 1996-05-20 2003-10-14 株式会社富士電機総合研究所 薄膜太陽電池およびその製造方法
JP3859119B2 (ja) * 2000-12-22 2006-12-20 日立金属株式会社 電子部品用薄膜配線
AU2003271178A1 (en) 2002-10-17 2004-05-25 Asahi Glass Company, Limited Multilayer body, base with wiring, organic el display device, connection terminal of organic el display device, and methods for manufacturing these
JP3649238B2 (ja) * 2002-10-17 2005-05-18 旭硝子株式会社 積層体、配線付き基体、有機ｅｌ表示素子、有機ｅｌ表示素子の接続端子及びそれらの製造方法
JP2005079130A (ja) 2003-08-28 2005-03-24 Hitachi Metals Ltd 薄膜配線層
JP4470147B2 (ja) * 2003-09-16 2010-06-02 日立金属株式会社 薄膜配線層
JP4730662B2 (ja) * 2005-03-02 2011-07-20 日立金属株式会社 薄膜配線層
WO2007029756A1 (ja) * 2005-09-07 2007-03-15 Asahi Glass Company, Limited 補助配線付き基体およびその製造方法
JP4821670B2 (ja) * 2007-03-26 2011-11-24 旭硝子株式会社 補助配線付き電極基体の製造方法
WO2010004783A1 (ja) * 2008-07-07 2010-01-14 三井金属鉱業株式会社 Ａｌ－Ｎｉ系合金配線電極材料
US20110198602A1 (en) * 2008-11-05 2011-08-18 Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) Aluminum alloy film for display device, display device, and sputtering target
JP5203908B2 (ja) * 2008-12-04 2013-06-05 新日鉄住金マテリアルズ株式会社 Ｎｉ−Ｍｏ系合金スパッタリングターゲット板

Also Published As

Publication number Publication date
CN102956158A (zh) 2013-03-06
KR20130020569A (ko) 2013-02-27
KR101358529B1 (ko) 2014-02-05
JP2013060655A (ja) 2013-04-04
TW201309822A (zh) 2013-03-01
TWI443207B (zh) 2014-07-01
CN102956158B (zh) 2014-11-26

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