KR101357971B1 - 가열 장치 - Google Patents
가열 장치 Download PDFInfo
- Publication number
- KR101357971B1 KR101357971B1 KR1020070117144A KR20070117144A KR101357971B1 KR 101357971 B1 KR101357971 B1 KR 101357971B1 KR 1020070117144 A KR1020070117144 A KR 1020070117144A KR 20070117144 A KR20070117144 A KR 20070117144A KR 101357971 B1 KR101357971 B1 KR 101357971B1
- Authority
- KR
- South Korea
- Prior art keywords
- heating
- conductive member
- ceramic base
- ceramic
- heating apparatus
- Prior art date
Links
- 238000010438 heat treatment Methods 0.000 title claims abstract description 181
- 239000000919 ceramic Substances 0.000 claims abstract description 131
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 11
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 4
- 239000000758 substrate Substances 0.000 abstract description 31
- 235000012431 wafers Nutrition 0.000 abstract description 21
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 19
- 239000010410 layer Substances 0.000 description 11
- 239000007769 metal material Substances 0.000 description 11
- 238000005336 cracking Methods 0.000 description 10
- 230000001105 regulatory effect Effects 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 238000009826 distribution Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- UONOETXJSWQNOL-UHFFFAOYSA-N tungsten carbide Chemical compound [W+]#[C-] UONOETXJSWQNOL-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/141—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
- H05B3/143—Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Resistance Heating (AREA)
- Surface Heating Bodies (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US87010906P | 2006-12-15 | 2006-12-15 | |
US60/870,109 | 2006-12-15 | ||
US06/870,109 | 2006-12-15 | ||
JPJP-P-2007-234489 | 2007-09-10 | ||
JP2007234489A JP5117146B2 (ja) | 2006-12-15 | 2007-09-10 | 加熱装置 |
JPJP-P-2007-00234489 | 2007-09-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20080056085A KR20080056085A (ko) | 2008-06-20 |
KR101357971B1 true KR101357971B1 (ko) | 2014-02-04 |
Family
ID=39567722
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020070117144A KR101357971B1 (ko) | 2006-12-15 | 2007-11-16 | 가열 장치 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP5117146B2 (ja) |
KR (1) | KR101357971B1 (ja) |
CN (1) | CN101207945B (ja) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101916738B (zh) * | 2010-07-08 | 2013-07-17 | 中微半导体设备(上海)有限公司 | 一种易于释放晶片的静电吸盘结构及方法 |
US10883950B2 (en) | 2011-08-30 | 2021-01-05 | Watlow Electric Manufacturing Company | Multi-parallel sensor array system |
US9624137B2 (en) | 2011-11-30 | 2017-04-18 | Component Re-Engineering Company, Inc. | Low temperature method for hermetically joining non-diffusing ceramic materials |
US9556074B2 (en) * | 2011-11-30 | 2017-01-31 | Component Re-Engineering Company, Inc. | Method for manufacture of a multi-layer plate device |
US8932690B2 (en) | 2011-11-30 | 2015-01-13 | Component Re-Engineering Company, Inc. | Plate and shaft device |
US11229968B2 (en) | 2011-11-30 | 2022-01-25 | Watlow Electric Manufacturing Company | Semiconductor substrate support with multiple electrodes and method for making same |
JP5687396B1 (ja) * | 2014-03-31 | 2015-03-18 | Sppテクノロジーズ株式会社 | プラズマ処理装置 |
JP6431190B2 (ja) * | 2014-10-31 | 2018-11-28 | ワットロー・エレクトリック・マニュファクチャリング・カンパニー | ヒーター用熱動的応答感知システム |
CN105097632B (zh) * | 2015-06-23 | 2018-07-17 | 京东方科技集团股份有限公司 | 一种支撑基板的支撑件和支撑装置 |
JP6530088B2 (ja) * | 2016-01-29 | 2019-06-12 | 株式会社美鈴工業 | ヒータとそれを備える定着装置、画像形成装置及び加熱装置 |
JP6979016B2 (ja) * | 2016-08-10 | 2021-12-08 | 日本碍子株式会社 | セラミックヒータ |
JP6393006B1 (ja) | 2018-02-08 | 2018-09-19 | 日本碍子株式会社 | 半導体製造装置用ヒータ |
US10566228B2 (en) | 2018-02-08 | 2020-02-18 | Ngk Insulators, Ltd. | Heater for semiconductor manufacturing apparatus |
CN110230043A (zh) * | 2019-05-17 | 2019-09-13 | 苏州珂玛材料科技股份有限公司 | 化学气相淀积设备、陶瓷加热盘与陶瓷加热盘的制备方法 |
CN112563185B (zh) * | 2021-02-20 | 2021-06-08 | 北京中硅泰克精密技术有限公司 | 静电卡盘及半导体加工设备 |
CN115606318A (zh) | 2021-03-18 | 2023-01-13 | 日本碍子株式会社(Jp) | AlN陶瓷基体及半导体制造装置用加热器 |
CN114376276A (zh) * | 2021-12-14 | 2022-04-22 | 深圳顺络电子股份有限公司 | 加热器和电子烟 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001102436A (ja) | 1999-05-07 | 2001-04-13 | Applied Materials Inc | 静電チャック及びその製造方法 |
JP2002100460A (ja) | 2000-09-22 | 2002-04-05 | Ibiden Co Ltd | セラミックヒータおよびホットプレートユニット |
JP2003297535A (ja) | 2002-04-04 | 2003-10-17 | Ibiden Co Ltd | セラミックヒータ |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09213781A (ja) * | 1996-02-01 | 1997-08-15 | Tokyo Electron Ltd | 載置台構造及びそれを用いた処理装置 |
JP3288922B2 (ja) * | 1996-03-14 | 2002-06-04 | 日本碍子株式会社 | 接合体およびその製造方法 |
JPH10116676A (ja) * | 1996-10-09 | 1998-05-06 | Nippon Cement Co Ltd | ヒーター用均熱材 |
US5880924A (en) * | 1997-12-01 | 1999-03-09 | Applied Materials, Inc. | Electrostatic chuck capable of rapidly dechucking a substrate |
EP1120829A4 (en) * | 1999-08-10 | 2009-05-27 | Ibiden Co Ltd | CERAMIC PLATE FOR DEVICE FOR PRODUCING SEMICONDUCTORS |
JP4156788B2 (ja) * | 2000-10-23 | 2008-09-24 | 日本碍子株式会社 | 半導体製造装置用サセプター |
US20030209326A1 (en) * | 2002-05-07 | 2003-11-13 | Mattson Technology, Inc. | Process and system for heating semiconductor substrates in a processing chamber containing a susceptor |
-
2007
- 2007-09-10 JP JP2007234489A patent/JP5117146B2/ja active Active
- 2007-11-16 CN CN2007101927221A patent/CN101207945B/zh active Active
- 2007-11-16 KR KR1020070117144A patent/KR101357971B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001102436A (ja) | 1999-05-07 | 2001-04-13 | Applied Materials Inc | 静電チャック及びその製造方法 |
JP2002100460A (ja) | 2000-09-22 | 2002-04-05 | Ibiden Co Ltd | セラミックヒータおよびホットプレートユニット |
JP2003297535A (ja) | 2002-04-04 | 2003-10-17 | Ibiden Co Ltd | セラミックヒータ |
Also Published As
Publication number | Publication date |
---|---|
KR20080056085A (ko) | 2008-06-20 |
JP2008153194A (ja) | 2008-07-03 |
JP5117146B2 (ja) | 2013-01-09 |
CN101207945B (zh) | 2011-11-16 |
CN101207945A (zh) | 2008-06-25 |
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