KR101357971B1 - 가열 장치 - Google Patents

가열 장치 Download PDF

Info

Publication number
KR101357971B1
KR101357971B1 KR1020070117144A KR20070117144A KR101357971B1 KR 101357971 B1 KR101357971 B1 KR 101357971B1 KR 1020070117144 A KR1020070117144 A KR 1020070117144A KR 20070117144 A KR20070117144 A KR 20070117144A KR 101357971 B1 KR101357971 B1 KR 101357971B1
Authority
KR
South Korea
Prior art keywords
heating
conductive member
ceramic base
ceramic
heating apparatus
Prior art date
Application number
KR1020070117144A
Other languages
English (en)
Korean (ko)
Other versions
KR20080056085A (ko
Inventor
이쿠히사 모리오카
야스후미 아이하라
히데요시 츠루타
Original Assignee
엔지케이 인슐레이터 엘티디
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엔지케이 인슐레이터 엘티디 filed Critical 엔지케이 인슐레이터 엘티디
Publication of KR20080056085A publication Critical patent/KR20080056085A/ko
Application granted granted Critical
Publication of KR101357971B1 publication Critical patent/KR101357971B1/ko

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67103Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00Ohmic-resistance heating
    • H05B3/10Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/141Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds
    • H05B3/143Conductive ceramics, e.g. metal oxides, metal carbides, barium titanate, ferrites, zirconia, vitrous compounds applied to semiconductors, e.g. wafers heating

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Resistance Heating (AREA)
  • Surface Heating Bodies (AREA)
KR1020070117144A 2006-12-15 2007-11-16 가열 장치 KR101357971B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US87010906P 2006-12-15 2006-12-15
US60/870,109 2006-12-15
US06/870,109 2006-12-15
JPJP-P-2007-234489 2007-09-10
JP2007234489A JP5117146B2 (ja) 2006-12-15 2007-09-10 加熱装置
JPJP-P-2007-00234489 2007-09-10

Publications (2)

Publication Number Publication Date
KR20080056085A KR20080056085A (ko) 2008-06-20
KR101357971B1 true KR101357971B1 (ko) 2014-02-04

Family

ID=39567722

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070117144A KR101357971B1 (ko) 2006-12-15 2007-11-16 가열 장치

Country Status (3)

Country Link
JP (1) JP5117146B2 (ja)
KR (1) KR101357971B1 (ja)
CN (1) CN101207945B (ja)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101916738B (zh) * 2010-07-08 2013-07-17 中微半导体设备(上海)有限公司 一种易于释放晶片的静电吸盘结构及方法
US10883950B2 (en) 2011-08-30 2021-01-05 Watlow Electric Manufacturing Company Multi-parallel sensor array system
US9624137B2 (en) 2011-11-30 2017-04-18 Component Re-Engineering Company, Inc. Low temperature method for hermetically joining non-diffusing ceramic materials
US9556074B2 (en) * 2011-11-30 2017-01-31 Component Re-Engineering Company, Inc. Method for manufacture of a multi-layer plate device
US8932690B2 (en) 2011-11-30 2015-01-13 Component Re-Engineering Company, Inc. Plate and shaft device
US11229968B2 (en) 2011-11-30 2022-01-25 Watlow Electric Manufacturing Company Semiconductor substrate support with multiple electrodes and method for making same
JP5687396B1 (ja) * 2014-03-31 2015-03-18 Sppテクノロジーズ株式会社 プラズマ処理装置
JP6431190B2 (ja) * 2014-10-31 2018-11-28 ワットロー・エレクトリック・マニュファクチャリング・カンパニー ヒーター用熱動的応答感知システム
CN105097632B (zh) * 2015-06-23 2018-07-17 京东方科技集团股份有限公司 一种支撑基板的支撑件和支撑装置
JP6530088B2 (ja) * 2016-01-29 2019-06-12 株式会社美鈴工業 ヒータとそれを備える定着装置、画像形成装置及び加熱装置
JP6979016B2 (ja) * 2016-08-10 2021-12-08 日本碍子株式会社 セラミックヒータ
JP6393006B1 (ja) 2018-02-08 2018-09-19 日本碍子株式会社 半導体製造装置用ヒータ
US10566228B2 (en) 2018-02-08 2020-02-18 Ngk Insulators, Ltd. Heater for semiconductor manufacturing apparatus
CN110230043A (zh) * 2019-05-17 2019-09-13 苏州珂玛材料科技股份有限公司 化学气相淀积设备、陶瓷加热盘与陶瓷加热盘的制备方法
CN112563185B (zh) * 2021-02-20 2021-06-08 北京中硅泰克精密技术有限公司 静电卡盘及半导体加工设备
CN115606318A (zh) 2021-03-18 2023-01-13 日本碍子株式会社(Jp) AlN陶瓷基体及半导体制造装置用加热器
CN114376276A (zh) * 2021-12-14 2022-04-22 深圳顺络电子股份有限公司 加热器和电子烟

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102436A (ja) 1999-05-07 2001-04-13 Applied Materials Inc 静電チャック及びその製造方法
JP2002100460A (ja) 2000-09-22 2002-04-05 Ibiden Co Ltd セラミックヒータおよびホットプレートユニット
JP2003297535A (ja) 2002-04-04 2003-10-17 Ibiden Co Ltd セラミックヒータ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09213781A (ja) * 1996-02-01 1997-08-15 Tokyo Electron Ltd 載置台構造及びそれを用いた処理装置
JP3288922B2 (ja) * 1996-03-14 2002-06-04 日本碍子株式会社 接合体およびその製造方法
JPH10116676A (ja) * 1996-10-09 1998-05-06 Nippon Cement Co Ltd ヒーター用均熱材
US5880924A (en) * 1997-12-01 1999-03-09 Applied Materials, Inc. Electrostatic chuck capable of rapidly dechucking a substrate
EP1120829A4 (en) * 1999-08-10 2009-05-27 Ibiden Co Ltd CERAMIC PLATE FOR DEVICE FOR PRODUCING SEMICONDUCTORS
JP4156788B2 (ja) * 2000-10-23 2008-09-24 日本碍子株式会社 半導体製造装置用サセプター
US20030209326A1 (en) * 2002-05-07 2003-11-13 Mattson Technology, Inc. Process and system for heating semiconductor substrates in a processing chamber containing a susceptor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001102436A (ja) 1999-05-07 2001-04-13 Applied Materials Inc 静電チャック及びその製造方法
JP2002100460A (ja) 2000-09-22 2002-04-05 Ibiden Co Ltd セラミックヒータおよびホットプレートユニット
JP2003297535A (ja) 2002-04-04 2003-10-17 Ibiden Co Ltd セラミックヒータ

Also Published As

Publication number Publication date
KR20080056085A (ko) 2008-06-20
JP2008153194A (ja) 2008-07-03
JP5117146B2 (ja) 2013-01-09
CN101207945B (zh) 2011-11-16
CN101207945A (zh) 2008-06-25

Similar Documents

Publication Publication Date Title
KR101357971B1 (ko) 가열 장치
TWI459851B (zh) heating equipment
JP5018244B2 (ja) 静電チャック
US7763831B2 (en) Heating device
US9269600B2 (en) Electrostatic chuck device
KR100885060B1 (ko) 플라즈마 발생용 전극내장형 서셉터 및 그 제조 방법
US8071913B2 (en) Heating device
JP5557164B2 (ja) 静電チャック
KR102094212B1 (ko) 세라믹스 부재
JP6786439B2 (ja) 保持装置および保持装置の製造方法
US20080212255A1 (en) Electrostatic chuck and method for manufacturing same
CN111095521B (zh) 晶片载置台及其制法
KR20040004139A (ko) 전극 내장형 서셉터 및 그 제조 방법
KR100918714B1 (ko) 전극 내장형 서셉터 및 그 제조 방법
KR20030032850A (ko) 전극내장형 서셉터 및 그 제조방법
KR101495850B1 (ko) 세라믹 정전척 및 그 제조방법
US20050022744A1 (en) Susceptor for Semiconductor Manufacturing Equipment, and Semiconductor Manufacturing Equipment in Which the Susceptor Is Installed
JP2006127900A (ja) 環状ヒータ
KR20190038554A (ko) SiC 히터
US20090159007A1 (en) Substrate support
JP7240232B2 (ja) 保持装置
JP4522963B2 (ja) 加熱装置
JP6867907B2 (ja) セラミックス接合体およびセラミックス接合体の製造方法
JP2006210696A (ja) セラミック製静電チャック
KR20240003436A (ko) 웨이퍼 적재대

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20170103

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20180118

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20190117

Year of fee payment: 6