KR101357971B1 - Heating device - Google Patents

Abstract

An object of the present invention is to provide a heating device capable of uniformly heating a heated object in a semiconductor manufacturing process.

The heating apparatus 10 is equipped with the ceramic base 11 which has a heating surface, and the heat generating body 12 embedded in the ceramic base 11. The thermally conductive member 14 is provided between the heating surface 11 a in the ceramic substrate 11 and the heating element 12. The thermally conductive member 14 has a higher thermal conductivity than that of the ceramic substrate.

Heating devices, semiconductors, wafers,

Description

[0001] HEATING DEVICE [0002]

The present invention relates to a heating apparatus used for heating a wafer of a semiconductor.

In the manufacturing process of a semiconductor device, heat processing is performed in order to form an oxide film etc. on a wafer using a semiconductor manufacturing apparatus. As an example of the wafer heating apparatus in this semiconductor manufacturing apparatus, the ceramic heater of the disk shape which has a disk shaped ceramic base which has a heating surface on which a to-be-heated thing is set is embedded, and the resistance heating body is embedded in this ceramic substrate. There is. The resistive heating element of the ceramic heater is embedded in the ceramic body, and electric power is supplied to the resistive heating element to generate the heating surface.

Such a ceramic heater is required to be able to heat the wafer to be stably maintained at a predetermined heating temperature. In addition, it is required to be able to uniformly heat the surface of the wafer. Therefore, the ceramic heater is designed as a resistive heating element with a planar wiring, or a bulk heat sink is attached to the surface on the side opposite to the heating surface of the disk-shaped ceramic substrate as a temperature regulating member. This bulk heat sink can quickly dissipate heat from the ceramic gas. Therefore, local temperature rise in a heating surface can be suppressed, and this contributes to uniformly heating a wafer over the surface of a heating surface.

This bulk heat sink and ceramic base are, for example, a heating device bonded together by an adhesive layer of a silicone resin. However, since the silicone resin has low heat resistance, the use temperature of the heating device is limited. In addition, since silicone resins are inferior in thermal conductivity, there is a limit to uniformly maintaining the wafers.

Therefore, it is a mutual heating apparatus in which the bulk type heat sink and the ceramic base were joined by the bonding layer formed by thermocompression bonding of aluminum synthesis (patent document 1).

[Patent Document 1] Japanese Patent Application Laid-Open No. 9-249465

However, even with the heating apparatus by the joining layer formed by thermocompression bonding of this aluminum alloy, the uniformity of the heating temperature of the surface in the heating surface of a ceramic base is not always enough. In particular, when the amount of heat input to the resistive heating element is large or when the ceramic gas is made of a material having low thermal conductivity, the uniformity of the heating (cracking property) is deteriorated, and thus the surface temperature of the wafer heated by this heating device. The uniformity of was also worsened. If the uniformity of the surface temperature of the wafer deteriorates, the in-plane uniformity of film formation and etching performed on the wafer is lowered, and the yield in manufacturing the semiconductor device is lowered.

Thus, the present invention advantageously solves the above problems, and improves the cracking property on the heating surface, thereby providing a heating device capable of uniformly heating the heated object attached to the heating surface in terms of surface. It aims to do it.

In order to achieve the above object, the heating device of the present invention is a heating device having a ceramic gas having a heating surface and a heating element embedded in the ceramic gas, wherein the heating device is disposed between the heating surface and the heating element in the ceramic gas. And a heat conductive member disposed in the heat conductive member, wherein the heat conductivity of the heat conductive member is higher than that of the ceramic substrate.

According to the heating apparatus of the present invention, it becomes possible to uniformly heat the heated object adhered to the heating surface on the surface.

EMBODIMENT OF THE INVENTION Hereinafter, the Example of the heating apparatus of this invention is described using drawing.

1 is a cross-sectional view showing one embodiment according to the heating apparatus of the present invention. In addition, in the drawing stated below, in order to make understanding of each component of a heating apparatus easy, each component expresses the dimension ratio differently from a real heating apparatus. Therefore, the heating device according to the present invention is not limited to the dimensional ratio of the heating device shown in the drawings.

The heating apparatus 10 of this embodiment shown in FIG. 1 has a disk-shaped ceramic base 11. The ceramic base 11 is made of, for example, alumina (Al ₂ O ₃ ) ceramics or aluminum nitride (AlN) ceramics.

The planar portion on one side of the disc-shaped ceramic substrate 11 serves as a heating surface 11a for setting and heating a wafer (not shown) which is a heated object, for example. Inside the ceramic substrate 11, a resistance heating element 12 is embedded on the rear surface 11b opposite to the heating surface 11a.

The heater terminal 13 connected to the resistance heating element 12 is inserted from the rear surface 11b of the ceramic substrate. By supplying electric power to the resistance heating element 12 from an external power supply (not shown) connected to the heater terminal 13, heat generated by the resistance heating element 12 is generated from the ceramic body 11 from the resistance heating element 12. The inside of the ceramic base 11 is moved toward the heating surface 11a. Thereby, it becomes possible to heat the wafer set to the heating surface 11a.

The temperature regulating member 21 is attached to the ceramic base 11 in close contact with the rear surface 11b of the ceramic base 11. In the illustrated example, the bolts 23 are inserted into the plurality of bolt holes formed in the periphery of the ceramic base 11, and the bolts 23 are screwed with the screw holes formed in the temperature regulating member 21 to form ceramics. The base 11 and the temperature regulating member 21 are fastened and fixed. The ceramic substrate 11 and the temperature regulating member 21 may be fixed by a resin adhesive.

The temperature regulating member 21 is a material capable of conducting heat by conducting heat from the ceramic base 11 and being made of a metal material having good thermal conductivity, for example, bulk aluminum. In order to improve the heat-generating effect by this temperature control member 21, the fluid flow hole 21a which a refrigerant | coolant can pass is formed in this temperature control member 21. As shown in FIG. In addition, a terminal hole 21b through which the heater terminal 13 can be inserted is formed in the temperature adjusting member 21, and a tubular insulating member 22B is fitted so as to contact the inner wall of the terminal hole 21b. Lost This insulating member 22B insulates the heater terminal 13 which penetrates into the inner peripheral surface side of the insulating member 22B, and the temperature control member 21 which consists of metal materials.

One of the characteristic structures of the heating apparatus 10 of this embodiment is thermal conductivity between the heating surface 11a of the ceramic base 11 and the resistance heating body 12 embedded in the ceramic base 11. The member 14 is arrange | positioned. In the illustrated embodiment, the thermally conductive member has a planar shape and a thin plate shape having a diameter substantially the same as the heating surface 11a and is disposed substantially parallel to the heating surface 11a. This thermally conductive member 14 has a higher thermal conductivity than that of the ceramic base 11.

By providing this heat conductive member 14, the heating apparatus 10 of this embodiment can acquire the following effect. When electric power is supplied to the resistance heating element 12 and the resistance heating element 12 generates heat, a part of the generated heat moves toward the heating surface 11a of the ceramic base 11. The heat reaching the thermally conductive member 14 in the middle of the heating surface 11a does not only move from the thermally conductive member 14 toward the heating surface 11a but also inside the thermally conductive member 14. In that direction it moves in the plane direction. By the heat diffusion movement of the heat conductive member 14 in the planar direction, the heat amount toward the heating surface 11a is averaged in the planar direction of the heat conductive member 14. Therefore, since the heat from the heat conductive member 14 toward the heating surface 11a is also averaged in the planar direction of the heating surface 11a, the temperature is uniform in the heating surface 11a (crackability). Is to improve.

The heating device of the present embodiment includes the thermally conductive member 14, so that the above-described effect is particularly effective when the ceramic base 11 is made of ceramics containing alumina as a main component. Since alumina does not have high thermal conductivity of about 30 W / mK, when alumina is not provided with a thermally conductive member 14, part of the heat generated from the resistive heating element 12 is internal to the ceramic base 11. The amount of diffusion movement in the plane direction is small. Therefore, although the ceramic base 11 which has alumina as a main component is provided, in the case of the general heating apparatus which is not equipped with the thermally conductive member 14, cracking property was not enough. On the other hand, the heating apparatus of this embodiment can provide the thermal conductive member 14, and even if it has the ceramic base 11 which has alumina as a main component, it can remarkably improve cracking property.

Regarding the improvement of cracking property caused by providing the thermally conductive member 14, between the heating surface 11a and the resistance heating element 12 of the ceramic substrate 11, the thermally conductive member ( Since 14) is disposed, the thermally conductive member 14 effectively contributes to improving the cracking property. Therefore, the heating apparatus of this embodiment is remarkably excellent in cracking property compared with the heating apparatus of the prior art. In addition, the semiconductor wafer as a heated object heated by this heating device 10 has a large effect on the yield of the semiconductor device to be manufactured even if a small temperature change occurs in the plane, and thus the heating device 10 of the present embodiment. ), The improvement in cracking properties brings a significant improvement in the yield of semiconductor devices.

The material for the thermally conductive member 14 is suitable as long as the material has a higher thermal conductivity than the ceramic base 11. Higher thermal conductivity is preferable. For example, when the ceramic base 11 is made of alumina (thermal conductivity: about 30 W / m · K), the thermal conductive member 14 is preferably made of aluminum or aluminum alloy (thermal conductivity: about 230 W / m · K). . Moreover, it is not limited to aluminum or an aluminum alloy, Indium, an indium alloy, or other metallic material with favorable thermal conductivity may be sufficient. The thermally conductive member 14 may be aluminum nitride (thermal conductivity: about 150 W / m · K), which is a high thermal conductive ceramic.

In order to fully spread the heat in the planar direction, the thermally conductive member 14 needs to have a certain thickness, and for example, preferably has a thickness of about 0.5 mm to 5.0 mm. If the thermally conductive member 14 is thinner than about 0.5 mm, the diffusion of heat in the planar direction is not sufficient, and the effect of having the thermally conductive member 14 is insufficient. In addition, when the heat conductive member 14 has a thickness exceeding about 5.0 mm, the effect by having the heat conductive member 14 is saturated. The thickness of the thermally conductive member 14, which is about 0.5 mm to 5.0 mm, applies electrostatic force to a metal electrode, for example, the heating surface 11a, which is embedded between a heating surface and a resistance heating element used in a conventionally known heating apparatus. It differs greatly from the thickness of the electrode for producing and the high frequency electrode for producing a plasma near the heating surface 11a. In the thickness of the electrode of a conventionally well-known heating apparatus, it is difficult to obtain the improvement of the crack property aimed at in this invention.

The ceramic base 11 is not limited to the ceramics containing alumina as a main component described above, but may be made of ceramics containing yttrium oxide as a main component. In this case, the thermally conductive member can be a metal material having a higher thermal conductivity than aluminum or an aluminum alloy, indium or indium alloy, or other yttrium oxide. The ceramic substrate 11 may be made of ceramics containing aluminum nitride as a main component. The ceramic substrate made of aluminum nitride has a volume resistivity suitable for generating electrostatic force using Johnson-Rahbek force. In this case, the thermally conductive member can be a metal material having a higher thermal conductivity than aluminum, aluminum alloy, or other aluminum nitride.

The thermally conductive member 14 has substantially the same planar shape and substantially the same dimensions as the heating surface 11a of the ceramic base 11, so that the uniformity (crackability) of the heating temperature in the heating surface 11a is maintained. It is advantageous in improving. Naturally, the planar shape and dimensions of the thermally conductive member 14 are not limited thereto. In other words, the heat conductive member 14 may be disposed between the heating surface 11a and the resistance heating element 12 in the ceramic body 11 in a shape and a dimension capable of improving cracking properties.

The resistive heating element 12 is made of a high melting point metal material such as Nb (niobium), Pt (platinum), W (tungsten) or Mo (molybdenum), or carbides thereof (except platinum). Such a resistive heating element 12 may have a planar shape formed by application of a raw material paste containing the metal material or the like, or may be coiled. In the case where the resistive heating element 12 is a coil-type resistive heating element molded from a wire material containing niobium or the like, since the resistive heating element 12 generates three-dimensionally in the ceramic body 11, the resistive heating element 12 generates heat more than the planar resistive heating element. In-plane uniformity of substrate heating can be improved. In addition, since the coil-type resistive heating element is manufactured by processing a homogeneous wire material, the fluctuations in the heat generation characteristics for each lot of the heating apparatus are small. In addition, by locally varying the coil pitch or the like, the temperature distribution on the substrate mounting surface can be easily adjusted. In addition, the coil-type resistance heating element can improve the adhesiveness to the ceramic substrate than the planar resistance heating element.

Considering a suitable dimension and shape of the thermally conductive member 14, the ceramic base 11 is divided into two parts, the upper part and the lower part, and the three-layer structure in which the thermal conductive member 14 is interposed between the upper part and the lower part. It is a more preferable form to have. The heating apparatus of this embodiment shown in FIG. 1 has this preferred three-layer structure.

In addition, the heating apparatus can form the structure in which the upper part and the lower part of the separately prepared ceramic substrate 11 are bonded by thermal compression bonding (TCB) by the thermal conductive member 14. Since the thermally conductive member 14 is a member formed by thermocompression bonding among the three layers, the upper part and the lower part of the ceramic base 11 can be firmly joined without a gap over the entire joining surface, and therefore, the thermal conductivity The member 14 becomes the heat conductive member 14 which has the outstanding effect which does not adversely affect the intensity | strength of the ceramic base body 11 whole.

The upper portion of the ceramic substrate 11 preferably has a volume resistivity of 1 × 10 ⁸ Ω · cm to 1 × 10 ¹² Ω · cm or 1 × 10 ¹⁵ Ω · cm or more at the use temperature. The volume resistivity of 1 × 10 ⁸ Ω · cm to 1 × 10 ¹² Ω · cm is a volume resistivity suitable for producing electrostatic force using Johnson Lavec force on the heating surface 11a, and is 1 × 10 ¹⁵ Ω · cm or more. The volume resistivity is a volume resistivity which is high in insulation and suitable for generating a constant electric power using a Coulomb force. At a volume resistivity in the range of 1 × 10 ¹² Ω · cm to less than 1 × 10 ¹⁵ Ω · cm, it is insufficient to generate an electrostatic force, and the desorption response of the ceramic base 11 to the wafer after the wafer is adsorbed and held. Lowers. At a volume resistivity of less than 1 × 10 ⁸ Ω · cm, the leakage current increases, which may adversely affect the wafer and cause a decrease in yield.

The lower portion of the ceramic substrate preferably has a volume resistivity of 1 × 10 ⁸ Ω · cm or more at the use temperature. If the volume resistivity is less than 1 × 10 ⁸ Ω · cm, a leakage current may be generated in this lower portion, resulting in insulation failure.

In the heating apparatus 10 of this embodiment, since the thermal conductive member 14 is arrange | positioned in parallel with the heating surface 11a of the ceramic base 11, this thermal conductive member 14 is used as a high frequency electrode. It becomes possible to utilize. In detail, in the heating apparatus having the ceramic base 11, a disk-shaped high frequency electrode is embedded in the vicinity of the heating surface, and the high frequency plasma is formed in a space near the heated object set on the heating surface by the high frequency electrode. It is one of the heating devices that generates. Since this high frequency electrode generally consists of the conductive member which can supply a high frequency electric power, in this embodiment, when the thermal conductive member 14 consists of metal materials etc., the thermal conductive member 14 is used as this high frequency electrode. Applicable In the heating apparatus 10 of this embodiment shown in FIG. 1, the heat conductive member 14 also serves as a high frequency electrode. Therefore, from the rear surface 11b of the ceramic base 11 to the heat conductive member 14, A hole 11c is formed so that the high frequency electrode terminal 15 connected to the thermal conductive member 14 can be inserted therethrough. Moreover, the terminal hole 21c is formed in the temperature regulation member 21 on the extension line of the said hole 11c, the 22 C of tubular insulation members are inserted in contact with the inner wall of this terminal hole 21c, The tubular insulating member 22C insulates the high frequency electrode terminal 15 penetrated into the inner peripheral surface side of the insulating member 22C and the temperature regulating member 21 made of a metal material. The high frequency electrode terminal 15 is connected to the thermal conductive member 14 through the terminal hole 21c of the temperature regulating member 21 and the hole 11c of the ceramic body 11, and connects the high frequency electrode terminal 15 to the thermal conductive member 14. By supplying high frequency electric power to the heat conductive member 14 from the outside, the heat conductive member 14 becomes available as a high frequency electrode. Thereby, the heating apparatus 10 of this embodiment does not need to provide a high frequency electrode separately. In addition, the exposed side of the thermally conductive member may be corroded by the high frequency plasma generated when the thermally conductive member is a metallic material. In order to prevent corrosion of the thermally conductive member, the side surface of the thermally conductive member may be protected by a corrosion resistant material. For example, it can protect by providing the film | membrane or ring of corrosion resistant ceramics and corrosion resistant resin. Specific examples of the method for forming a corrosion resistant material include a thermal sprayed film of alumina ceramics and a heat shrink ring made of fluorine resin.

The heating apparatus 10 of this embodiment may have the electrostatic electrode which hold | maintains the wafer set by the heating surface 11a of the ceramic base 11 by electrostatic power. Thereby, it becomes possible to adsorb | suck and hold | maintain this wafer by electrostatic force at the time of heating of a wafer. Therefore, the heating apparatus 10 of this embodiment is closer to the heating surface 11a than the thermal conductive member 14, and the electrostatic electrode 16 is embedded in the ceramic base 11 inside. And the hole 11d is formed so that it may reach the electrostatic electrode 16 from the back surface 11b of this ceramic base 11. This hole 11d is for making the insertion of the electrostatic electrode terminal 17 connected to the electrostatic electrode 16 possible. Further, a terminal hole 21d is formed on an extension line of the hole 11d in the temperature regulating member 21, and the tubular insulating member 22D is fitted in contact with the inner wall of the terminal hole 21d. The electrostatic electrode terminal 17 penetrated to the inner peripheral surface side of the insulating member 22D and the temperature regulating member 21 made of a metal material are insulated from each other. By applying a voltage from the outside to the electrostatic electrode 16 via the electrostatic electrode terminal 17, the area between the electrostatic electrode 16 and the heating surface 11a is polarized to form a dielectric layer, and the heating surface 11a is applied to the electrostatic electrode 16. To produce an electrostatic force. By this electrostatic force, the wafer can be adsorbed and held. In the ceramic substrate 11, when the area between the electrostatic electrode 16 and the heating surface 11a is made of alumina at least, the alumina has an appropriate electrical resistivity. Can produce The electrostatic force by the Coulomb force does not need to flow a small current to the heating surface 11a like the electrostatic force by the Johnson Lavec force.

The electrostatic electrode 16 preferably contains tungsten carbide (WC) and 10% or more of alumina. Since the electrostatic electrode 16 has tungsten carbide as a main component, the diffusion of the components of the electrostatic electrode 16 in the ceramic substrate 11 made of alumina is very small, so that the volume resistivity of the alumina in the vicinity of the electrostatic electrode 16 is reduced. Can be made higher. This improves the insulation characteristics when high voltage is applied. As a result of the high resistance of the dielectric layer, the desorption characteristics of the adsorbed substrate are improved. Moreover, since this electrostatic electrode 16 contains 10% or more of alumina, the adhesiveness of the electrostatic electrode 16 part improves. The upper limit of the content of alumina contained in the electrostatic electrode 16 is preferably about 50 wt% or less from the viewpoint of reducing the electrical resistance of the electrostatic electrode 16 to the extent that the high voltage or high frequency current applied is not impaired.

The electrostatic electrode 16 can use what printed the paste containing the predetermined amount of the mixed powder of alumina and tungsten carbide in planar shape, such as mesh shape, a comb shape, and a spiral winding. In addition, although the heating apparatus 10 of this embodiment shown in FIG. 1 has shown the bipolar type example as the electrostatic electrode 16, the electrostatic electrode 16 is not limited to a bipolar type, However, It may be a unipolar type or a multipolar type.

The ceramic base 11 is preferably divided into two parts, an upper part and a lower part, and formed in a three-layer structure in which a thermally conductive member 14 is interposed between the upper part and the lower part, and the ceramic base 11 is electrostatically charged. In the heating apparatus with the electrostatic chuck provided with the electrode 16, the electrostatic electrode 16 is included in the upper portion of the ceramic base 11, and the resistance heating element 12 is disposed in the lower portion of the ceramic base 11. It is preferable to set it as the structure contained. Since the electrostatic electrode 16 is embedded in the vicinity of the heating surface 11a of the ceramic base 11, it is included in the upper part of the ceramic base 11. In addition, the heat conductive member 14 is provided in order to diffuse and move the heat from the resistance heating element 12 toward the heating surface 11a of the ceramic base 11 in the planar direction of the heat conductive member 14. The heating element 12 is included in the lower portion of the ceramic base 11.

As an example of the manufacturing method of the heating apparatus 10 of this embodiment, the upper part and the lower part of the ceramic base 11 divided | segmented into the up-down direction are produced, respectively, and this upper part and the lower part are thermally conductive members. There is a manufacturing method including the step of joining by thermocompression bonding (14).

This thermocompression bonding is performed by, for example, using aluminum as the thermally conductive member 14 to polymerize the upper and lower portions of the ceramic substrate 11 prepared in advance with the thermally conductive member 14 of the aluminum interposed therebetween. It can carry out by heating to predetermined temperature, pressing in the thickness direction. It is good to make this heating temperature into the temperature of 1 degreeC-40 degreeC lower than melting | fusing point of the heat conductive member 14, and to set pressurization pressure to 25 kg / cm <2> -80 kg / cm <2>. Thereby, the heat conductive member 14 can firmly join the upper part and the lower part of the ceramic base 11 without changing a dimension. In addition, since the dimensions of the thermally conductive member 14 do not change, the ceramic base 11 may have any through hole. In this method, the thickness of the thermally conductive member made of aluminum can be 0.5 mm to 5 mm. This thickness is sufficient to disperse heat in the planar direction.

The upper part and the lower part of the ceramic base 11 used for this thermocompression bonding are produced separately. The upper part and the lower part of this ceramic base 11 can also be produced from ceramics of a different kind. For example, the upper portion may be made of ceramics containing yttrium oxide as a main component, and the lower portion may be made of ceramics containing alumina as a main component.

The ceramic sintered body used as the upper part of the ceramic base 11, the ceramic sintered body used as the lower part of the ceramic base 11, and the thermal conductive member 14 were prepared, respectively.

The ceramic sintered body, which is the upper portion of the ceramic substrate 11, is press-molded from a raw material powder at a predetermined pressure using a mold to form a molded body, and then fired using a hot press firing method to embed the electrostatic electrode. One sintered compact was obtained. Similarly, the ceramic sintered body, which is the lower part of the ceramic base 11, is formed from a raw powder by press molding at a predetermined pressure using a mold to form a molded body, and then calcined by using a hot press firing method, and then a resistance heating element. The sintered compact which embedded this was obtained.

When the thermally conductive member 14 is sandwiched between the ceramic sintered body to be the upper part and the ceramic sintered body to be the lower part, and the thermally conductive member 14 is Al, the pressure of 40 kgf / cm 2 in the thickness direction is pressurized. And heating these members at a temperature of 540 ° C. for 5 hours, and heating the members at a temperature of 130 ° C. for 5 hours while pressurizing a pressure of 10 kgf / cm 2 in the thickness direction when the heat conductive member 14 is In. Thermocompression bonding. Thus, the ceramic substrate 11 shown in FIG. 1 having a three-layer structure in which an upper portion of the ceramic substrate 11, a thermocompression layer made of the heat conductive member 14, and a lower portion of the ceramic substrate 11 are laminated. )

After this thermocompression bonding, the surface grinding process of the ceramic substrate was performed using diamond grindstone. Moreover, the side surface of the fired body was ground, the necessary drilling process and the terminal were attached, and the ceramic base 11 was completed.

The obtained ceramic substrate was fastened and fixed to the temperature control member which consists of bulk aluminum by a bolt, and the heating apparatus of this embodiment was obtained.

As a comparative example, the heating device which has a structure similar to this embodiment was produced except having no thermally conductive member. The sectional drawing of the heating apparatus of a comparative example is shown in FIG. In addition, in the heating apparatus 100 shown in FIG. 2, since the same code | symbol is attached | subjected about the same member as FIG. 1, the overlapping description is abbreviate | omitted.

The example of the measurement result of in-plane temperature distribution in Example (FIG. 3) and comparative example (FIG. 4) which heated so that the heating surface of each heating apparatus obtained in this way may become 100 degreeC, and investigated the in-plane temperature distribution of the said heating surface. Shows. 3 and 4 were measured using an infrared spectrophotometer measuring apparatus. From the contrast of FIG. 3 and FIG. 4, it turns out that an Example has a smaller change of temperature distribution than a comparative example.

Table 1 and Table 2 show the results of investigating the in-plane temperature fluctuation amount (crackability) in the same manner for the heating apparatuses of Examples 1 to 13, Comparative Example 1 and Comparative Example 2.

Example One 2 3 4 5 6 7 8 Thermal conductivity
absence material Al In Al Al Al Al Al Al Thickness [mm] One One One One 0.5 2 2.5 4 Thermal conductivity
[Ｗ ／ ｍ―Ｋ] 237 82 237 237 237 237 237 237



topside
Ceramic substrate
material Al ₂ O ₃ Al ₂ O ₃ AlN Y ₂ O ₃ Al ₂ O ₃ Al ₂ O ₃ Al ₂ O ₃ Al ₂ O ₃ Thickness [mm] 2 2 2 2 2 2 2 2 Thermal conductivity
[Ｗ ／ ｍ―Ｋ] 30 30 100 15 30 30 30 30 Thermal expansion rate
[ｐｐｍ ／ Ｋ] 7.8 7.8 5.0 8.0 7.8 7.8 7.8 7.8 Volume expansion rate
[Ω · cm] 1.0 × 10 ¹⁶ 1.0 × 10 ¹⁶ 1.0 × 10 ¹⁰ 1.0 × 10 ¹⁶ 1.0 × 10 ¹⁶ 1.0 × 10 ¹⁶ 1.0 × 10 ¹⁶ 1.0 × 10 ¹⁶ Buried electrode ESC ESC ESC ESC ESC ESC ESC ESC Down
ceramic
gas




material Al ₂ O ₃ Al ₂ O ₃ AlN Y ₂ O ₃ Al ₂ O ₃ Al ₂ O ₃ Al ₂ O ₃ Al ₂ O ₃ Thickness [mm] 4 4 4 4 4 4 4 4 Thermal conductivity
[Ｗ ／ ｍ―Ｋ] 30 30 100 15 30 30 30 30 Thermal expansion rate
[ｐｐｍ ／ Ｋ] 7.8 7.8 5.0 8.0 7.8 7.8 7.8 7.8 Volume expansion rate
[Ω · cm] 1.0 × 10 ¹⁶ 1.0 × 10 ¹⁶ 1.0 × 10 ¹⁰ 1.0 × 10 ¹⁶ 1.0 × 10 ¹⁶ 1.0 × 10 ¹⁶ 1.0 × 10 ¹⁶ 1.0 × 10 ¹⁶ Buried electrode heater heater heater heater heater heater heater heater Crackability [° C] 1.8 3.9 0.9 2.8 3.7 1.4 1.2 1.0 Heating
speed@
70000０
[℃ / ｓ] 2.0 2.0 1.6 2.1 2.2 1.8 1.7 1.2 Remarks

Example Comparative Example 9 10 11 12 13 One 2 Thermal conductivity
absence material Al Al Al Al Al None None Thickness [mm] 5 One One One One - - Thermal conductivity
[Ｗ ／ ｍ―Ｋ] 237 237 237 237 237 - -



topside
Ceramic substrate
material Al ₂ O ₃ Y ₂ O ₃ Al ₂ O ₃ AlN AlN Al ₂ O ₃ Y ₂ O ₃ Thickness [mm] 2 2 2 2 2 2 2 Thermal conductivity
[Ｗ ／ ｍ―Ｋ] 30 30 30 100 100 30 15 Thermal expansion rate
[ｐｐｍ ／ Ｋ] 7.8 7.8 7.8 5.0 5.0 7.4 8.0 Volume expansion rate
[Ω · cm] 1.0 × 10 ¹⁶ 1.0 × 10 ¹⁶ 1.0 × 10 ¹⁴ 1.0 x 10 ⁷ 1.0 × 10 ¹⁰ 1.0 × 10 ¹⁶ 1.0 × 10 ¹⁶ Buried electrode ESC ESC ESC ESC ESC ESC,
heater ESC,
heater Down
ceramic
gas




material Al ₂ O ₃ Al ₂ O ₃ Al ₂ O ₃ AlN AlN - - Thickness [mm] 4 4 4 4 4 - - Thermal conductivity
[Ｗ ／ ｍ―Ｋ] 30 30 30 100 100 - - Thermal expansion rate
[ｐｐｍ ／ Ｋ] 7.8 8.0 7.8 5.0 5.0 - - Volume expansion rate
[Ω · cm] 1.0 × 10 ¹⁶ 1.0 × 10 ¹⁶ 1.0 × 10 ¹⁶ 1.0 × 10 ¹⁰ 6.0 × 10 ⁶ - - Buried electrode heater heater heater heater heater Crackability [° C] 0.9 2.0 1.9 1.1 2.0 6.6 12.6 Heating
speed@
70000０
[℃ / ｓ] 0.9 2.0 2.0 1.7 2.5 2.0 2.2 Remarks

From Tables 1 and 2, in Examples 1 to 13 having a heat conductive member, the distribution of in-plane temperature was small as compared with Comparative Examples 1 and 2. The heating apparatus of this embodiment can remarkably improve the in-plane cracking property of the heated object.

In Example 10, the difference in coefficient of thermal expansion between the upper portion and the lower portion of the ceramic substrate 11 was 0.2 ppm / K, and 0.1 mm of warpage occurred after the bonding. In Example 11, since the volume resistivity of the upper part of the ceramic base 11 was 1 * 10 <^{14> (} ohm) * cm, desorption response took 60 second and the throughput fell. In Example 12, since the volume resistivity of the upper part of the ceramic base 11 was 1 * 10 <^7> ohm * cm, the leakage current generate | occur | produced 1 mA. In Example 13, since the volume resistivity of the lower part of the ceramic base 11 was 6 * 10 <^{6> (} ohm) * cm, the leakage current generate | occur | produced in the heater part.

Moreover, in the heating apparatus of this embodiment, when a high frequency electric power was supplied from the terminal connected to the heat conductive member, the plasma atmosphere was able to be generated in the vicinity of the heating surface.

As mentioned above, although the heating apparatus of this invention was demonstrated using drawing and embodiment, the heating apparatus of this invention is not limited to these drawings and embodiment, A various deformation | transformation is not carried out within the range which does not deviate from the meaning of this invention. It is possible.

1 is a cross-sectional view showing one embodiment according to the heating apparatus of the present invention.

2 is a cross-sectional view of an example of a conventional heating device.

3 shows the temperature distribution of the heating surface of the heating apparatus of the present invention.

4 is a diagram showing a temperature distribution of a heating surface of a conventional heating device.

<Explanation of symbols for the main parts of the drawings>

10: heating device

11: ceramic gas

12: resistance heating element

13: dielectric layer

14: thermally conductive member

Claims (13)

A base made of ceramics having a heating surface, A heating apparatus comprising a heating element embedded in the ceramic base, A heat conductive member is provided between the heating surface and the heating element in the ceramic base, and the heat conductive member is made of aluminum or an aluminum alloy, and the thermal conductivity of the heat conductive member is higher than that of the ceramic base. The ceramic body is divided into two parts, an upper part and a lower part, and a three-layer structure in which the thermally conductive member is interposed between the upper part and the lower part, and the upper part and the lower part are made of the same material. The heating surface of the said ceramic base and the external dimension of the said heat conductive member correspond, The heating apparatus characterized by the above-mentioned. The heating apparatus according to claim 1, wherein the base is made of ceramics containing alumina. The heating apparatus according to claim 1, wherein the base is made of ceramics containing yttrium oxide. The heating apparatus according to claim 1, wherein the base is made of ceramics containing aluminum nitride. delete delete The heating apparatus according to claim 1, wherein the heat conductive member has a thickness of about 0.5 mm to 5.0 mm. The heating apparatus according to claim 1, wherein said thermally conductive member is a member formed by thermocompression bonding. The heating apparatus according to claim 1, wherein said thermally conductive member also serves as a high frequency electrode. delete The heating apparatus according to any one of claims 1 to 4, wherein the ceramic base comprises an electrostatic electrode. The heating apparatus according to claim 11, wherein the electrostatic electrode is included in an upper portion of the ceramic base, and the heating element is included in a lower portion of the ceramic base. delete

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