KR101355987B1 - 미세한 알루미늄 배선용 알루미늄 범프 본딩 - Google Patents

미세한 알루미늄 배선용 알루미늄 범프 본딩 Download PDF

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KR101355987B1
KR101355987B1 KR1020087022387A KR20087022387A KR101355987B1 KR 101355987 B1 KR101355987 B1 KR 101355987B1 KR 1020087022387 A KR1020087022387 A KR 1020087022387A KR 20087022387 A KR20087022387 A KR 20087022387A KR 101355987 B1 KR101355987 B1 KR 101355987B1
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aluminum
diameter
wiring
bond
bump
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KR1020087022387A
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English (en)
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KR20080103072A (ko
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아담스 추
싱췐 팡
프레드 렌
권용석
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페어차일드 세미컨덕터 코포레이션
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Publication of KR20080103072A publication Critical patent/KR20080103072A/ko
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Abstract

본 발명은 알루미늄 본드 배선이 알루미늄 범프와 리드에 연결되는 패키징된 반도체 장치를 포함한다. 반도체 장치는 니켈 판을 가진 복수개의 리드로 구성된 리드프레임 상에 실장된다. 2 밀 직경 배선 등의 미세한 알루미늄 배선과 리드 사이에 알루미늄 범프를 형성하기 위해, 알루미늄 범프는 니켈 판에 본딩되고, 그리고 알루미늄 배선은 알루미늄 범프에 본딩된다. 알루미늄 범프는 니켈로 도핑된 알루미늄이고, 6 밀 직경 배선 등의 큰 직경의 알루미늄 배선으로부터 형성된다.
알루미늄 본드 배선, 알루미늄 범프, 반도체 장치, 니켈 판, 니켈

Description

미세한 알루미늄 배선용 알루미늄 범프 본딩{ALUMINUM BUMP BONDING FOR FINE ALUMINUM WIRE}
본 발명은 반도체 장치 상의 리드프레임이나 접촉부 등의 표면에 알루미늄 배선을 본딩(bonding)하는 것에 관한 것이다.
종래에, 반도체 패키지에 있어서, 반도체 다이 특징부를 리드프레임의 리드에 연결하는 알루미늄 본딩 배선은 리드프레임에 직접 연결된다. 이 방법을 사용하는 경우, 미세한 알루미늄 배선(3 밀(mil) 직경 미만)에 연관된 공통적인 문제는 힐 브레이크(heel break) 및 본드 리프트(bond lift)가 있다는 것이다. 본딩 파라미터가 너무 높게 설정되는 경우 힐 브레이크가 발생될 수 있고, 본딩 부분이 끊어져서 반도체 특징부와 리드 사이에 전기가 통하지 않을 수 있는 가능성이 있다. 본딩 파라미터가 너무 낮게 설정되는 경우, 일반적으로 본드 리프트는 일어나고, 본드는 리드로부터 연결되지 않는다. 이로써, 본딩이 유효하게 되는 본딩 파라미터의 범위는 좁아지게 된다. 또한, 리드프레임에 미세한 알루미늄 배선을 직접 본딩하는 본딩 파라미터는 알루미늄의 재료 성분과 리드프레임의 표면 조건에 매우 민감하다.
금 배선을 리드프레임에 본딩하는 범프(bump) 방법에 관한 본드 스티치(bond stitch)는 본드 배선과 리드프레임 사이에서 리드프레임 상의 배선 범프를 경계면으로서 사용한다. 이는 금 본드 배선용 본딩 파라미터의 범위를 완화시킨다. 다른 방법은 유사한 방식으로 솔더 범프(solder bump)를 사용할 수 있다. 그러나, 이러한 방법 어떤 것도 본딩 알루미늄 배선에는 적합하지 않다.
오카(Oka) 등에 의해 2002년 7월 2일에 출원된 미국 특허 번호 제 6,413,797 호를 포함하여 수많은 미국 특허에서는 반도체 패키징에서의 배선 본딩이 개시되고 있다. 오카는 금판 처리에서 반도체 장치에 배치된 금 범프로 구성된 전극을 가진 반도체 장치가 개시되어 있다. 금 범프는 전극에 금 배선의 연결을 용이하게 한다. 그러나, 오카는 미세한 알루미늄 배선을 표면에 연결하는 알루미늄 범프를 제공하는, 단가가 싸고 간단한 방법을 개시하고 있지는 않다.
그러므로, 본딩 파라미터를 완화시키는 본딩 미세한 알루미늄 배선의 방법은 힐 크랙 및 본드 리프트 상황을 감소시키는 것, 그리고 단가가 싼 것이 요구되고 있는 실정이다.
본 발명은, 한 형태로서, 알루미늄 본드 배선이 알루미늄 범프에서 리드에 연결되는 패키징된 반도체 장치(packaged semiconductor device)를 포함한다. 반도체 장치는 니켈판(nickel plating)을 가진 리드로 구성된 리드프레임 상에 실장된다. 2 밀의 직경 배선 등의 미세한 알루미늄 배선과 리드 사이에 알루미늄 범프 본드부를 형성하기 위해, 알루미늄 범프는 니켈판에 본딩되고, 그리고 미세한 알루미늄 배선은 알루미늄 범프에 본딩된다. 알루미늄 범프는 니켈로 도핑된 알루미늄이고, 6 밀 직경 배선 등의 큰 직경 알루미늄 배선으로부터 형성된다.
다른 형태에 있어서, 본 발명은 반도체 장치를 패키징하는 방법을 포함한다. 본 발명은 반도체 장치에 부착되고, 복수의 리드를 가지는 리드프레임을 구비하는 단계; 하나 이상의 리드의 표면부에 알루미늄 범프를 형성하는 단계; 및 알루미늄 범프의 각각에 알루미늄 본드 배선을 배선 본딩하는 단계를 포함한다. 알루미늄 본드 배선은 약 2 밀의 직경 등의 미세한 직경을 가지고, 알루미늄 범프는 약 6 밀의 직경 등의 큰 직경을 가진다. 알루미늄 범프는 알루미늄을 포함하고, 이는 니켈로 도핑될 수 있다. 리드는 니켈판을 가질 수 있다. 방법은 리드프레임과, 반도체 장치와, 그리고 알루미늄 본드 배선을 비전도성 캡슐 폴리머에 캡슐화하는 단계도 더 포함한다.
본 발명의 이점은 니켈 본드에 대한 알루미늄이 큰 직경의 알루미늄 범프를 통해 달성되고, 그리고 미세한 알루미늄 배선은 알루미늄 표면부에 본딩될 수 있다는 것이다. 니켈과의 본딩에 대해 미세한 알루미늄 배선은 본딩의 신뢰성이 떨어지고 특히 표면 조건 및 본딩 파라미터에 민감하다. 하지만 니켈과의 본딩에 대해 큰 직경의 알루미늄 배선의 본딩은 강하고, 표면 조건 및 본딩 파라미터에 덜 민감하다. 또한 본 발명은 본드 리프트 및 힐 크랙의 조건을 크게 감소시킨다.
본 발명은 첨부된 도면에 참조되어 개시된다. 본 발명의 도면은:
도 1은 본 발명의 따른 알루미늄 범프 본드부를 사용한 반도체 패키지의 단면도;
도 2는 도 1에 따른 리드에 대한 배선의 알루미늄 범프 본드부의 측면도;
도 3a는 도 2에 따른 알루미늄 범프를 형성하는 웨지 툴(wedge tool)의 팁(tip)의 정면도;
도 3b는 도 3a의 웨지 툴의 단면도; 및
도 4는 본 발명의 알루미늄 범프 본딩의 순서도이다.
대응 참조 기호는 여러 관점을 통하여 대응된 부분을 지칭한다. 본 일례는 여기에서 본 발명의 한 실시예를 나타내지만, 여러 방식으로 본 발명의 기술 영역을 국한하는 데에 구성되지는 않는다.
삭제
도 1을 참조하여, 본 발명의 알루미늄 범프 본드부를 가진 반도체 패키지가 제시된다. 반도체 패키지(10)는 반도체 장치(12)와, 리드프레임(14)과, 여러 알루미늄 본드 배선(16)과, 그리고 여러 알루미늄 범프 본드부(18)를 포함한다.
이때, 본딩표면부는 반도체 장치(12) 또는 리드(20)의 상부면을 의미하며 본딩이 되는 표면을 명명한 것이다. 또한 제1직경 알루미늄 배선은 큰 직경의 알루미늄 배선을 명명한 것이다. 제2직경 알루미늄 배선은 제1직경보다 직경이 작은, 미세한 직경의 알루미늄 배선을 명명한 것이다.
리드프레임(14)은 여러 리드(20)와, 반도체 장치(12)를 지지하는 다이 패드(22)를 포함한다. 반도체 장치는 알루미늄 본드 배선(16)에 의해 리드(20)에 연결되는 여러 전극을 포함한다. 특히, 본 실시예에서, 알루미늄 본드 배선(16)은 약 2 밀의 직경과 약 99% 알루미늄과 약 1% 실리콘의 합성물로 구성된다. 그러나, 알루미늄 본드 배선(16)은 각 실시예에서 대안적인 특징을 가질 수 있다. 이 설명의 목적상, 미세한 배선은 3 밀 이하의 직경을 가진 배선이며, 그리고 큰 직경의 배선은 3 밀 보다 더 큰 직경을 가진다.
도 2에 상세하게 제시된 알루미늄 범프 본드부(18)는 알루미늄 본드 배선(16)을 리드(20)에 본딩한 것이다. 리드(20)는 그 표면부 상에 니켈 판(24)을 가진 전형적인 구리이다. 알루미늄 범프 본드부(18)는 약 6 밀(150㎛)의 직경 등의 큰 직경의 알루미늄 배선의 일부로 구성되는 알루미늄 범프(26)로 구성된다. 특히, 본 실시예에서, 알루미늄 범프(26)는 니켈로 도핑된 알루미늄을 포함한다. 알루미늄 범프(26)는, 웨지 툴이 보통 사용되는 삼각형 웨지 툴과 대비하여 종단이 평평한 평면으로 구성되는 플랫 팁을 구비한 웨지 툴로 형성될 수 있고, 6 밀 배선의 리드프레임 본딩과 유사한 니켈 판(24)에 본딩된다. 도 3a 및 3b에 제시된 종단이 평면인 플랫 팁을 구비한 웨지 툴(28)은 알루미늄 범프(26)의 알루미늄 본드 배선(16)이 본딩되는 표면부를 평평하게 만든다. 알루미늄 범프(26)는 배선과는 달리 힐(Heel)을 가지지 않기 때문에, 웨지 툴(28)은 종래의 웨지 툴과 같이 힐을 수용하는 웨지 표면 상에 위를 향하는 곡면부를 가지지 않게 되는 것이다.
도 4를 참조하면, 본 발명의 처리는 웨이퍼 소우잉(wafer sawing) 단계(30)와, 다이 부착 단계(32)와, 범프 형성 단계(34)와, 배선 본딩 단계(36)와, 캡슐화 단계(38)과, 그리고 전형적인 라인의 종료인 마무리 및 검사 단계(40)를 포함한다. 웨이퍼 소우잉(wafer sawing) 단계(30)와 다이 부착 단계(32)는, 종단이 평면인 플랫 팁을 구비한 웨지 툴(28)을 사용하여 리드(20) 상의 니켈 판(24)에 6 밀 알루미늄 배선의 말단부를 연결하는 단계를 포함한다. 그 후, 6 밀 배선은 알루미늄 범프(26)를 남겨두고 그 말단부로부터 분리된다. 특히, 본 실시예예서, 연결될 알루미늄 본드 배선(16)의 방향으로 알루미늄 범프(26)의 길이를 길게 빼주는 주의가 필요하다. 또한, 알루미늄 범프(26)의 크기는 반도체 칩 사이에 열려진 게이트 패드만큼 적어도 커야 한다. 배선 본딩 단계(36)에서, 전형적인 배선 본딩 기술을 사용하여, 알루미늄 본드 배선(16)의 말단은 알루미늄 범프(26)에 본딩된다. 캡슐화 단계(38)에서, 비-전도성 캡슐화 폴리머(42)(도 1)는 패키지 상에 몰딩된다. 그 후, 전형적인 마무리 및 검사 단계는 단계(40)에서 실행된다.
이로써, 니켈 대 알루미늄의 본딩은 니켈 판(24)과 6 밀 알루미늄 배선의 일부인 알루미늄 범프(26) 사이에서 이루어진다. 그러한 본딩은 미세한 알루미늄 배선과 니켈판 사이에 행해지는 직접적인 본딩보다도 완화된 본드 파라미터로도 더 신뢰성이 있다. 또한, 미세한 알루미늄 본드 배선(16)은 알루미늄 대 알루미늄 본딩으로 알루미늄 범프(26)와 본딩되고, 미세한 알루미늄 배선의 알루미늄 대 니켈 본딩 보다 더 신뢰성을 가진다. 개선된 알루미늄 범프 본드부(18)는 본딩 파라미터 특정 한계를 낮게 하였어도, 미세한 배선의 알루미늄 대 니켈 본딩의 결과보다 향상된 본드 쉐어(shear) 검사와 본드 풀(pull) 검사결과를 야기하였다. 또한, 알루미늄 본드 배선(16)의 본드 두께는 개선되어, 그 결과, 힐 크랙에 대한 저항이 더 나아진다.
대안적인 실시예에서, 다른 배선 및 본드 크기가 사용될 수 있다. 예를 들면, 5 밀 배선용 배선 본드는 20 밀 범프를 사용할 수 있다.
본 발명이 바람직한 실시예를 참조하여 설명되었지만, 기술분야의 당업자라면, 본 발명의 기술영역의 벗어남 없이 특정 상황에 그의 성분을 대체하여 다양한 변화와 균등성이 구현될 수 있다. 그러므로, 본 발명은 본 발명에서 실행되기 위해 숙고된 최적 모드로써 개시된 특정 실시예에 국한됨이 아니라, 본 발명은 첨부된 청구항의 기술 영역 및 사상 내에 들어있는 모든 실시예를 포함할 수 있을 것이다.

Claims (16)

  1. 알루미늄 범프 본드부를 가진 패키징된 반도체 장치로서,
    상기 반도체 장치 또는 리드프레임의 일구성인 리드의 상부면인 본딩 표면부;
    상기 본딩 표면부에 본딩되고, 제1직경 알루미늄 배선으로 구성되며, 종단이 평면인 플랫 팁이 구비된 웨지 툴에 의해 형성되는 알루미늄 범프; 및
    일단은 상기 알루미늄 범프에 본딩되고, 상기 제1직경 보다 직경이 작게 구성되는 제2직경 알루미늄 배선으로 구성되는 알루미늄 본드 배선;을 포함하는 것을 특징으로 하는 패키징된 반도체 장치.
  2. 제 1 항에 있어서,
    상기 본딩 표면부는 니켈판을 포함하는 것을 특징으로 하는 패키징된 반도체 장치.
  3. 제 2 항에 있어서,
    상기 알루미늄 범프는 니켈로 도핑되는 것을 특징으로 하는 패키징된 반도체 장치.
  4. 제 1 항에 있어서,
    상기 제1직경 알루미늄 배선은 6 밀의 직경을 갖는 것을 특징으로 하는 패키징된 반도체 장치.
  5. 제 1 항에 있어서,
    상기 제2직경 알루미늄 배선은 2 밀의 직경을 갖는 것을 특징으로 하는 패키징된 반도체 장치.
  6. 삭제
  7. 삭제
  8. 반도체 장치가 부착되고 복수의 리드를 가지는 리드프레임을 제공하는 단계;
    하나 이상의 상기 리드의 표면부에 종단이 평면으로 구성되는 플랫 팁을 가진 웨지 툴을 이용하여 알루미늄 범프를 형성하는 단계; 및
    상기 알루미늄 범프의 각각에 알루미늄 본드 배선을 배선 본딩하는 단계;를 포함하는 것을 특징으로 하는 반도체 장치 패키징 방법.
  9. 제 8 항에 있어서,
    상기 알루미늄 본드 배선의 직경은 상기 알루미늄 범프의 직경보다 작게 구성되는 것을 특징으로 하는 반도체 장치 패키징 방법.
  10. 제 9 항에 있어서,
    상기 알루미늄 본드 배선은 2 밀의 직경을 갖는 것을 특징으로 하는 반도체 장치 패키징 방법.
  11. 제 8 항에 있어서,
    상기 알루미늄 범프를 형성하는 단계는,
    적어도 하나의 상기 리드에 제1직경 알루미늄 배선의 일부를 본딩하는 단계; 및
    상기 본딩된 일부를 남겨놓고 상기 제1직경 알루미늄 배선을 떼어내는 단계;를 포함하는 것을 특징으로 하는 반도체 장치 패키징 방법.
  12. 삭제
  13. 제 11 항에 있어서,
    상기 알루미늄 범프는 6 밀의 직경을 갖는 것을 특징으로 하는 반도체 장치 패키징 방법.
  14. 삭제
  15. 제 8 항에 있어서,
    상기 리드는 니켈판을 갖고 상기 알루미늄 범프는 니켈로 도핑되는 것을 특징으로 하는 반도체 장치 패키징 방법.
  16. 제 8 항에 있어서,
    상기 리드프레임, 상기 반도체 장치 및 상기 알루미늄 본드 배선을 비-전도성 캡슐 폴리머에 캡슐화하는 단계를 더 포함하는 것을 특징으로 하는 반도체 장치 패키징 방법.
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WO2007109652A3 (en) 2008-01-17
US8138081B2 (en) 2012-03-20
DE112007000671T8 (de) 2009-05-14
DE112007000671T5 (de) 2009-01-29
WO2007109652A2 (en) 2007-09-27
CN101405860A (zh) 2009-04-08
JP2009530872A (ja) 2009-08-27
MY147586A (en) 2012-12-31
US20070216026A1 (en) 2007-09-20
CN101405860B (zh) 2011-06-08
KR20080103072A (ko) 2008-11-26
US20100035385A1 (en) 2010-02-11

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