KR101345683B1 - 이온 주입기의 다중－방향 기계적 스캐닝 - Google Patents

이온 주입기의 다중－방향 기계적 스캐닝 Download PDF

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Publication number
KR101345683B1
KR101345683B1 KR1020097010742A KR20097010742A KR101345683B1 KR 101345683 B1 KR101345683 B1 KR 101345683B1 KR 1020097010742 A KR1020097010742 A KR 1020097010742A KR 20097010742 A KR20097010742 A KR 20097010742A KR 101345683 B1 KR101345683 B1 KR 101345683B1
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South Korea
Prior art keywords
substrate
axis
rotation
drive arm
delete delete
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020097010742A
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English (en)
Korean (ko)
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KR20090084893A (ko
Inventor
케이쓰 데이비드 존 렐린
트리스탄 리챠드 홀탐
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어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20090084893A publication Critical patent/KR20090084893A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20278—Motorised movement
    • H01J2237/20285—Motorised movement computer-controlled

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
KR1020097010742A 2006-10-27 2007-09-25 이온 주입기의 다중－방향 기계적 스캐닝 Expired - Fee Related KR101345683B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/588,432 2006-10-27
US11/588,432 US7785060B2 (en) 2006-10-27 2006-10-27 Multi-directional mechanical scanning in an ion implanter
PCT/GB2007/003633 WO2008050079A1 (en) 2006-10-27 2007-09-25 Multi-directional mechanical scanning in an ion implanter

Publications (2)

Publication Number Publication Date
KR20090084893A KR20090084893A (ko) 2009-08-05
KR101345683B1 true KR101345683B1 (ko) 2013-12-30

Family

ID=39032338

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097010742A Expired - Fee Related KR101345683B1 (ko) 2006-10-27 2007-09-25 이온 주입기의 다중－방향 기계적 스캐닝

Country Status (6)

Country Link
US (1) US7785060B2 (https=)
JP (1) JP5345062B2 (https=)
KR (1) KR101345683B1 (https=)
DE (1) DE112007002570T5 (https=)
TW (1) TWI392053B (https=)
WO (1) WO2008050079A1 (https=)

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US8227768B2 (en) * 2008-06-25 2012-07-24 Axcelis Technologies, Inc. Low-inertia multi-axis multi-directional mechanically scanned ion implantation system
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US8237135B2 (en) * 2009-01-22 2012-08-07 Axcelis Technologies, Inc. Enhanced low energy ion beam transport in ion implantation
US8168941B2 (en) * 2009-01-22 2012-05-01 Axcelis Technologies, Inc. Ion beam angle calibration and emittance measurement system for ribbon beams
US8168962B2 (en) * 2009-08-11 2012-05-01 Advanced Ion Beam Technology, Inc. Method and apparatus for uniformly implanting a wafer with an ion beam
US8294124B2 (en) * 2010-01-15 2012-10-23 Taiwan Semiconductor Manufacturing Co., Ltd. Scanning method and system using 2-D ion implanter
US20120043712A1 (en) * 2010-08-17 2012-02-23 Varian Semiconductor Equipment Associates, Inc. Mechanism and method for aligning a workpiece to a shadow mask
US8791430B2 (en) 2011-03-04 2014-07-29 Tel Epion Inc. Scanner for GCIB system
US9029808B2 (en) 2011-03-04 2015-05-12 Tel Epion Inc. Low contamination scanner for GCIB system
JP5665679B2 (ja) * 2011-07-14 2015-02-04 住友重機械工業株式会社 不純物導入層形成装置及び静電チャック保護方法
KR101576348B1 (ko) * 2013-01-18 2015-12-21 어드밴스드 이온 빔 테크놀로지 인크. 스캔 헤드 및 이를 사용하는 스캔 암
US9415508B1 (en) * 2015-05-15 2016-08-16 Varian Semiconductor Equipment Associates, Inc. Multi-link substrate scanning device
US20210398772A1 (en) * 2020-06-17 2021-12-23 Axcelis Technologies, Inc. Tuning apparatus for minimum divergence ion beam
US12334348B2 (en) 2021-07-21 2025-06-17 Tel Manufacturing And Engineering Of America, Inc. Substrate scanning apparatus with pendulum and rotatable substrate holder

Citations (2)

* Cited by examiner, † Cited by third party
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JP2003142570A (ja) * 2001-10-31 2003-05-16 Ulvac Japan Ltd 真空処理装置及び処理対象物の処理方法
KR20050008839A (ko) * 2002-06-21 2005-01-21 어플라이드 머티어리얼스, 인코포레이티드 이온 주입기의 다중 방향 기계 스캐닝

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KR20050008839A (ko) * 2002-06-21 2005-01-21 어플라이드 머티어리얼스, 인코포레이티드 이온 주입기의 다중 방향 기계 스캐닝

Also Published As

Publication number Publication date
US20080142726A1 (en) 2008-06-19
WO2008050079A1 (en) 2008-05-02
DE112007002570T5 (de) 2009-10-22
US7785060B2 (en) 2010-08-31
KR20090084893A (ko) 2009-08-05
JP2010507886A (ja) 2010-03-11
TW200826228A (en) 2008-06-16
TWI392053B (zh) 2013-04-01
JP5345062B2 (ja) 2013-11-20

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