DE112007002570T5 - Multi-direktionales, mechanisches Scannen in einem Ionen-Implanter - Google Patents

Multi-direktionales, mechanisches Scannen in einem Ionen-Implanter Download PDF

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Publication number
DE112007002570T5
DE112007002570T5 DE112007002570T DE112007002570T DE112007002570T5 DE 112007002570 T5 DE112007002570 T5 DE 112007002570T5 DE 112007002570 T DE112007002570 T DE 112007002570T DE 112007002570 T DE112007002570 T DE 112007002570T DE 112007002570 T5 DE112007002570 T5 DE 112007002570T5
Authority
DE
Germany
Prior art keywords
substrate
axis
drive arm
rotate
drive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112007002570T
Other languages
German (de)
English (en)
Inventor
Keith David John Horsham Relleen
Tristan Richard Horsham Holtam
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE112007002570T5 publication Critical patent/DE112007002570T5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20278—Motorised movement
    • H01J2237/20285—Motorised movement computer-controlled

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
DE112007002570T 2006-10-27 2007-09-25 Multi-direktionales, mechanisches Scannen in einem Ionen-Implanter Withdrawn DE112007002570T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/588,432 2006-10-27
US11/588,432 US7785060B2 (en) 2006-10-27 2006-10-27 Multi-directional mechanical scanning in an ion implanter
PCT/GB2007/003633 WO2008050079A1 (en) 2006-10-27 2007-09-25 Multi-directional mechanical scanning in an ion implanter

Publications (1)

Publication Number Publication Date
DE112007002570T5 true DE112007002570T5 (de) 2009-10-22

Family

ID=39032338

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112007002570T Withdrawn DE112007002570T5 (de) 2006-10-27 2007-09-25 Multi-direktionales, mechanisches Scannen in einem Ionen-Implanter

Country Status (6)

Country Link
US (1) US7785060B2 (https=)
JP (1) JP5345062B2 (https=)
KR (1) KR101345683B1 (https=)
DE (1) DE112007002570T5 (https=)
TW (1) TWI392053B (https=)
WO (1) WO2008050079A1 (https=)

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* Cited by examiner, † Cited by third party
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US7582883B2 (en) * 2007-01-12 2009-09-01 Applied Materials, Inc. Method of scanning a substrate in an ion implanter
GB2445959A (en) * 2007-01-27 2008-07-30 Richard James Taylor Celestial tracking device
US8227768B2 (en) * 2008-06-25 2012-07-24 Axcelis Technologies, Inc. Low-inertia multi-axis multi-directional mechanically scanned ion implantation system
GB0815876D0 (en) * 2008-09-01 2008-10-08 Meadwestvaco Packaging Systems Article handling device
US8237135B2 (en) * 2009-01-22 2012-08-07 Axcelis Technologies, Inc. Enhanced low energy ion beam transport in ion implantation
US8168941B2 (en) * 2009-01-22 2012-05-01 Axcelis Technologies, Inc. Ion beam angle calibration and emittance measurement system for ribbon beams
US8168962B2 (en) * 2009-08-11 2012-05-01 Advanced Ion Beam Technology, Inc. Method and apparatus for uniformly implanting a wafer with an ion beam
US8294124B2 (en) * 2010-01-15 2012-10-23 Taiwan Semiconductor Manufacturing Co., Ltd. Scanning method and system using 2-D ion implanter
US20120043712A1 (en) * 2010-08-17 2012-02-23 Varian Semiconductor Equipment Associates, Inc. Mechanism and method for aligning a workpiece to a shadow mask
US8791430B2 (en) 2011-03-04 2014-07-29 Tel Epion Inc. Scanner for GCIB system
US9029808B2 (en) 2011-03-04 2015-05-12 Tel Epion Inc. Low contamination scanner for GCIB system
JP5665679B2 (ja) * 2011-07-14 2015-02-04 住友重機械工業株式会社 不純物導入層形成装置及び静電チャック保護方法
KR101576348B1 (ko) * 2013-01-18 2015-12-21 어드밴스드 이온 빔 테크놀로지 인크. 스캔 헤드 및 이를 사용하는 스캔 암
US9415508B1 (en) * 2015-05-15 2016-08-16 Varian Semiconductor Equipment Associates, Inc. Multi-link substrate scanning device
US20210398772A1 (en) * 2020-06-17 2021-12-23 Axcelis Technologies, Inc. Tuning apparatus for minimum divergence ion beam
US12334348B2 (en) 2021-07-21 2025-06-17 Tel Manufacturing And Engineering Of America, Inc. Substrate scanning apparatus with pendulum and rotatable substrate holder

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Publication number Priority date Publication date Assignee Title
US4736107A (en) 1986-09-24 1988-04-05 Eaton Corporation Ion beam implanter scan control system
US5003183A (en) 1989-05-15 1991-03-26 Nissin Electric Company, Limited Ion implantation apparatus and method of controlling the same
US5229615A (en) 1992-03-05 1993-07-20 Eaton Corporation End station for a parallel beam ion implanter
US5389793A (en) 1983-08-15 1995-02-14 Applied Materials, Inc. Apparatus and methods for ion implantation
US5399871A (en) 1992-12-02 1995-03-21 Applied Materials, Inc. Plasma flood system for the reduction of charging of wafers during ion implantation
US5406088A (en) 1993-12-22 1995-04-11 Eaton Corporation Scan and tilt apparatus for an ion implanter
US5898179A (en) 1997-09-10 1999-04-27 Orion Equipment, Inc. Method and apparatus for controlling a workpiece in a vacuum chamber
US5969366A (en) 1995-11-08 1999-10-19 Applied Materials, Inc. Ion implanter with post mass selection deceleration
WO2004001789A2 (en) 2002-06-21 2003-12-31 Applied Materials, Inc. Multi directional mechanical scanning in an ion implanter

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US5389793A (en) 1983-08-15 1995-02-14 Applied Materials, Inc. Apparatus and methods for ion implantation
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WO2004001789A2 (en) 2002-06-21 2003-12-31 Applied Materials, Inc. Multi directional mechanical scanning in an ion implanter

Also Published As

Publication number Publication date
US20080142726A1 (en) 2008-06-19
WO2008050079A1 (en) 2008-05-02
US7785060B2 (en) 2010-08-31
KR101345683B1 (ko) 2013-12-30
KR20090084893A (ko) 2009-08-05
JP2010507886A (ja) 2010-03-11
TW200826228A (en) 2008-06-16
TWI392053B (zh) 2013-04-01
JP5345062B2 (ja) 2013-11-20

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R005 Application deemed withdrawn due to failure to request examination
R005 Application deemed withdrawn due to failure to request examination

Effective date: 20140926