JP5345062B2 - イオン注入装置における多方向機械的走査 - Google Patents

イオン注入装置における多方向機械的走査 Download PDF

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Publication number
JP5345062B2
JP5345062B2 JP2009533926A JP2009533926A JP5345062B2 JP 5345062 B2 JP5345062 B2 JP 5345062B2 JP 2009533926 A JP2009533926 A JP 2009533926A JP 2009533926 A JP2009533926 A JP 2009533926A JP 5345062 B2 JP5345062 B2 JP 5345062B2
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JP
Japan
Prior art keywords
axis
substrate
drive arm
drive
ion beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2009533926A
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English (en)
Japanese (ja)
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JP2010507886A5 (https=
JP2010507886A (ja
Inventor
キース， デーヴィット， ジョン リレーン，
トリスタン リチャード ホルタム，
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Applied Materials Inc
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Applied Materials Inc
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Publication date
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Publication of JP2010507886A publication Critical patent/JP2010507886A/ja
Publication of JP2010507886A5 publication Critical patent/JP2010507886A5/ja
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Publication of JP5345062B2 publication Critical patent/JP5345062B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20278—Motorised movement
    • H01J2237/20285—Motorised movement computer-controlled

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
JP2009533926A 2006-10-27 2007-09-25 イオン注入装置における多方向機械的走査 Expired - Fee Related JP5345062B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/588,432 2006-10-27
US11/588,432 US7785060B2 (en) 2006-10-27 2006-10-27 Multi-directional mechanical scanning in an ion implanter
PCT/GB2007/003633 WO2008050079A1 (en) 2006-10-27 2007-09-25 Multi-directional mechanical scanning in an ion implanter

Publications (3)

Publication Number Publication Date
JP2010507886A JP2010507886A (ja) 2010-03-11
JP2010507886A5 JP2010507886A5 (https=) 2010-10-07
JP5345062B2 true JP5345062B2 (ja) 2013-11-20

Family

ID=39032338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009533926A Expired - Fee Related JP5345062B2 (ja) 2006-10-27 2007-09-25 イオン注入装置における多方向機械的走査

Country Status (6)

Country Link
US (1) US7785060B2 (https=)
JP (1) JP5345062B2 (https=)
KR (1) KR101345683B1 (https=)
DE (1) DE112007002570T5 (https=)
TW (1) TWI392053B (https=)
WO (1) WO2008050079A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI910185B (zh) * 2020-06-17 2026-01-01 美商艾克塞利斯科技公司 用於植入離子至工件中之離子植入系統及用於最小化離子束在工件上的角度分布之方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI910185B (zh) * 2020-06-17 2026-01-01 美商艾克塞利斯科技公司 用於植入離子至工件中之離子植入系統及用於最小化離子束在工件上的角度分布之方法

Also Published As

Publication number Publication date
US20080142726A1 (en) 2008-06-19
WO2008050079A1 (en) 2008-05-02
DE112007002570T5 (de) 2009-10-22
US7785060B2 (en) 2010-08-31
KR101345683B1 (ko) 2013-12-30
KR20090084893A (ko) 2009-08-05
JP2010507886A (ja) 2010-03-11
TW200826228A (en) 2008-06-16
TWI392053B (zh) 2013-04-01

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