TWI392053B - 在離子佈植機上進行多方向掃瞄的方法和設備 - Google Patents

在離子佈植機上進行多方向掃瞄的方法和設備 Download PDF

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Publication number
TWI392053B
TWI392053B TW096138734A TW96138734A TWI392053B TW I392053 B TWI392053 B TW I392053B TW 096138734 A TW096138734 A TW 096138734A TW 96138734 A TW96138734 A TW 96138734A TW I392053 B TWI392053 B TW I392053B
Authority
TW
Taiwan
Prior art keywords
substrate
axis
arm
driving
driving arm
Prior art date
Application number
TW096138734A
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English (en)
Chinese (zh)
Other versions
TW200826228A (en
Inventor
瑞霖肯尼大衛約翰
候坦崔斯頓理查
Original Assignee
應用材料股份有限公司
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Publication of TW200826228A publication Critical patent/TW200826228A/zh
Application granted granted Critical
Publication of TWI392053B publication Critical patent/TWI392053B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20221—Translation
    • H01J2237/20228—Mechanical X-Y scanning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
    • H01J2237/202—Movement
    • H01J2237/20278—Motorised movement
    • H01J2237/20285—Motorised movement computer-controlled

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW096138734A 2006-10-27 2007-10-16 在離子佈植機上進行多方向掃瞄的方法和設備 TWI392053B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/588,432 US7785060B2 (en) 2006-10-27 2006-10-27 Multi-directional mechanical scanning in an ion implanter

Publications (2)

Publication Number Publication Date
TW200826228A TW200826228A (en) 2008-06-16
TWI392053B true TWI392053B (zh) 2013-04-01

Family

ID=39032338

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096138734A TWI392053B (zh) 2006-10-27 2007-10-16 在離子佈植機上進行多方向掃瞄的方法和設備

Country Status (6)

Country Link
US (1) US7785060B2 (https=)
JP (1) JP5345062B2 (https=)
KR (1) KR101345683B1 (https=)
DE (1) DE112007002570T5 (https=)
TW (1) TWI392053B (https=)
WO (1) WO2008050079A1 (https=)

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US8237135B2 (en) * 2009-01-22 2012-08-07 Axcelis Technologies, Inc. Enhanced low energy ion beam transport in ion implantation
US8168941B2 (en) * 2009-01-22 2012-05-01 Axcelis Technologies, Inc. Ion beam angle calibration and emittance measurement system for ribbon beams
US8168962B2 (en) * 2009-08-11 2012-05-01 Advanced Ion Beam Technology, Inc. Method and apparatus for uniformly implanting a wafer with an ion beam
US8294124B2 (en) * 2010-01-15 2012-10-23 Taiwan Semiconductor Manufacturing Co., Ltd. Scanning method and system using 2-D ion implanter
US20120043712A1 (en) * 2010-08-17 2012-02-23 Varian Semiconductor Equipment Associates, Inc. Mechanism and method for aligning a workpiece to a shadow mask
US8791430B2 (en) 2011-03-04 2014-07-29 Tel Epion Inc. Scanner for GCIB system
US9029808B2 (en) 2011-03-04 2015-05-12 Tel Epion Inc. Low contamination scanner for GCIB system
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KR101576348B1 (ko) * 2013-01-18 2015-12-21 어드밴스드 이온 빔 테크놀로지 인크. 스캔 헤드 및 이를 사용하는 스캔 암
US9415508B1 (en) * 2015-05-15 2016-08-16 Varian Semiconductor Equipment Associates, Inc. Multi-link substrate scanning device
US20210398772A1 (en) * 2020-06-17 2021-12-23 Axcelis Technologies, Inc. Tuning apparatus for minimum divergence ion beam
US12334348B2 (en) 2021-07-21 2025-06-17 Tel Manufacturing And Engineering Of America, Inc. Substrate scanning apparatus with pendulum and rotatable substrate holder

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US20050285052A1 (en) * 2004-06-18 2005-12-29 Tsinghua University Scanning mechanism of an ion implanter

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Also Published As

Publication number Publication date
US20080142726A1 (en) 2008-06-19
WO2008050079A1 (en) 2008-05-02
DE112007002570T5 (de) 2009-10-22
US7785060B2 (en) 2010-08-31
KR101345683B1 (ko) 2013-12-30
KR20090084893A (ko) 2009-08-05
JP2010507886A (ja) 2010-03-11
TW200826228A (en) 2008-06-16
JP5345062B2 (ja) 2013-11-20

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