JP5345062B2 - イオン注入装置における多方向機械的走査 - Google Patents
イオン注入装置における多方向機械的走査 Download PDFInfo
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- JP5345062B2 JP5345062B2 JP2009533926A JP2009533926A JP5345062B2 JP 5345062 B2 JP5345062 B2 JP 5345062B2 JP 2009533926 A JP2009533926 A JP 2009533926A JP 2009533926 A JP2009533926 A JP 2009533926A JP 5345062 B2 JP5345062 B2 JP 5345062B2
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- 239000000758 substrate Substances 0.000 claims description 91
- 238000010884 ion-beam technique Methods 0.000 claims description 65
- 238000000034 method Methods 0.000 claims description 27
- 238000002513 implantation Methods 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 4
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000004590 computer program Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 106
- 230000033001 locomotion Effects 0.000 description 31
- 150000002500 ions Chemical class 0.000 description 29
- 238000012545 processing Methods 0.000 description 13
- 238000002347 injection Methods 0.000 description 9
- 239000007924 injection Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- 239000007943 implant Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000010237 hybrid technique Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20221—Translation
- H01J2237/20228—Mechanical X-Y scanning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/202—Movement
- H01J2237/20278—Motorised movement
- H01J2237/20285—Motorised movement computer-controlled
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- High Energy & Nuclear Physics (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Physical Vapour Deposition (AREA)
Description
Claims (15)
- イオン注入装置においてイオンビームを通して基板を走査するための基板スキャナにおいて、上記基板スキャナは、
回転接合部に設けられた第1の駆動アームと、
回転接合部に設けられた第2の駆動アームと、
上記第1の駆動アームを固定の第1の回転軸の周りに回転させ且つ上記第2の駆動アームを固定の第2の回転軸の周りに上記第1の駆動アームとは別に独立して回転させるように動作できる駆動手段と、
リンクに結合された基板ホルダーと、
を備え、
上記リンクは、上記第1の駆動アーム及び/又は上記第2の駆動アームが回転される時に、上記基板ホルダーが移動するように、上記第1の軸から離れた場所で上記第1の駆動アームに結合され且つ上記第2の軸から離れた場所で上記第2の駆動アームに結合されており、上記第1の駆動アーム及び上記第2の駆動アームの一方を静止させた状態でもう一方を回転させる、または、両方の回転の相対速度を変えて、または回転を同じ速度にして同時に駆動させることにより、複数の異なる二次元的走査パターンによる走査を可能とする、基板スキャナ。 - 上記第1の駆動アーム及び上記第2の駆動アームは、上記第1の軸及び上記第2の軸が同軸となるように、支持体に結合される、請求項1に記載の基板スキャナ。
- 上記リンクは、第3の軸の周りに回転するように一緒に回転可能に結合された第1の部材及び第2の部材を備え、上記第1の部材は、第4の軸の周りに回転するように上記第1の駆動アームに回転可能に結合され、上記第2の部材は、第5の軸の周りに回転するように上記第2の駆動アームに回転可能に結合され、
上記第1の軸、上記第2の軸、上記第3の軸、上記第4の軸及び上記第5の軸は、平行である、請求項2に記載の基板スキャナ。 - 上記基板ホルダーは、上記第1の軸、上記第2の軸、上記第3の軸、上記第4の軸及び上記第5の軸と平行に延びる第6の軸の周りに回転できるように、上記リンクに回転可能に結合され、上記基板ホルダーは、上記基板ホルダーを上記第6の軸の周りに回転させるように動作できる基板ホルダー駆動手段を備える、請求項3に記載の基板スキャナ。
- 上記支持体は、上記第1の軸と実質的に直角の第7の軸の周りに回転できるように回転可能に取り付けられ、上記第7の軸は上記基板ホルダーの上面に平行に延びている、請求項3又は4に記載の基板スキャナ。
- 上記第7の軸は、上記基板ホルダーの上面の直ぐ上を通るように延びている、請求項5に記載の基板スキャナ。
- イオンビームを発生するように動作できるイオン源と、上記イオンビームをイオンビームパスに沿って案内するように動作できる光学部品と、上記イオンビームを通して基板を走査するように動作できる請求項1から6のいずれかに記載の基板スキャナと、を備えており、上記第1の軸は、上記基板スキャナでの上記イオンビームパスの方向と平行である、イオン注入装置。
- 請求項7に記載のイオン注入装置を使用し、注入すべき基板を上記基板ホルダーが保持するようにして、基板に注入する方法において、
上記基板を上記イオンビームに隣接して配置するステップと、
上記第1の駆動アームを回転させて、それにより、上記基板が上記イオンビームを通して進まされ、上記イオンビームが上記基板に亘る走査線を辿るように、上記駆動手段を使用するステップと、
を含む方法。 - 上記第1の軸及び上記第2の軸が平行であり、ある円のある弧に対応する上記基板に亘る走査線を上記イオンビームが辿るように上記駆動手段を使用して上記第1の駆動アーム及び上記第2の駆動アームを同じ方向に及び同じ速度で回転させるステップを含む、請求項8に記載の方法。
- 上記弧の走査線を辿った後、上記平行な第1の軸及び第2の軸と上記基板ホルダーとの間の距離を変えるように上記駆動手段を使用して上記第1の駆動アーム及び上記第2の駆動アームを反対方向かつ同一速度で回転させるステップと、
上記ある円の半径とは異なる半径の円のある弧に対応する上記基板に亘る別の走査線を上記イオンビームが辿るように上記駆動手段を使用して上記第1の駆動アーム及び上記第2の駆動アームを同じ方向に且つ同じ速度で回転させるステップと、
上記異なる半径の同心円の一連の弧に対応する一連の走査線が上記基板に亘って辿られるように上記駆動手段を使用して、弧状走査線を辿り、また、上記平行な第1の軸及び第2の軸と上記基板ホルダーとの間の距離を変える為に上記第1の駆動アーム及び上記第2の駆動アームを回転させるステップを繰り返すステップと、
を含む、請求項9に記載の方法。 - 上記平行な第1の軸及び第2の軸と上記基板ホルダーとの間の距離が均一に変えられ、上記弧の走査線が等しく分離されるように、上記第1の駆動アーム及び上記第2の駆動アームを繰り返し回転させるため上記駆動手段を使用するステップと、
上記第1の駆動アーム及び上記第2の駆動アームを共通の同じ速度で同じ方向に繰り返し回転させて上記基板の均一な注入量を得るため上記駆動手段を使用するステップと、
を含む請求項10に記載の方法。 - 上記イオンビームが上記基板に亘って直線の走査線を辿るように、上記第1の駆動アーム及び上記第2の駆動アームを同時に反対方向に回転させるため上記駆動手段を使用するステップを含む、請求項8に記載の方法。
- 上記第2の駆動アームを回転させ、それにより、上記基板を移動させて次の走査線に沿う注入のための準備をさせるように上記駆動手段を使用するステップと、
上記イオンビームが上記基板に亘って一連の走査線を辿るように、上記第1の駆動アーム及び上記第2の駆動アームを回転させるため上記駆動手段を繰り返して使用し、ラスターパターンを形成するステップと、
を更に含む、請求項12に記載の方法。 - 上記イオンビームに対する上記基板の配向を維持するように上記イオンビームを通して上記基板を移動させるため上記駆動手段を使用しながら、上記基板を回転させるステップを更に含む、請求項12又は13に記載の方法。
- イオン注入装置の動作を制御するように構成されたコンピュータにおいて実行されるとき、上記イオン注入装置が請求項8から14のいずれかに記載の方法に従って動作するようにさせるプログラム命令を含むコンピュータプログラム。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/588,432 | 2006-10-27 | ||
US11/588,432 US7785060B2 (en) | 2006-10-27 | 2006-10-27 | Multi-directional mechanical scanning in an ion implanter |
PCT/GB2007/003633 WO2008050079A1 (en) | 2006-10-27 | 2007-09-25 | Multi-directional mechanical scanning in an ion implanter |
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JP2010507886A JP2010507886A (ja) | 2010-03-11 |
JP2010507886A5 JP2010507886A5 (ja) | 2010-10-07 |
JP5345062B2 true JP5345062B2 (ja) | 2013-11-20 |
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JP2009533926A Active JP5345062B2 (ja) | 2006-10-27 | 2007-09-25 | イオン注入装置における多方向機械的走査 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7785060B2 (ja) |
JP (1) | JP5345062B2 (ja) |
KR (1) | KR101345683B1 (ja) |
DE (1) | DE112007002570T5 (ja) |
TW (1) | TWI392053B (ja) |
WO (1) | WO2008050079A1 (ja) |
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-
2006
- 2006-10-27 US US11/588,432 patent/US7785060B2/en active Active
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2007
- 2007-09-25 WO PCT/GB2007/003633 patent/WO2008050079A1/en active Application Filing
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- 2007-09-25 KR KR1020097010742A patent/KR101345683B1/ko active IP Right Grant
- 2007-09-25 DE DE112007002570T patent/DE112007002570T5/de not_active Withdrawn
- 2007-10-16 TW TW096138734A patent/TWI392053B/zh active
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KR20090084893A (ko) | 2009-08-05 |
WO2008050079A1 (en) | 2008-05-02 |
DE112007002570T5 (de) | 2009-10-22 |
US20080142726A1 (en) | 2008-06-19 |
US7785060B2 (en) | 2010-08-31 |
TWI392053B (zh) | 2013-04-01 |
JP2010507886A (ja) | 2010-03-11 |
KR101345683B1 (ko) | 2013-12-30 |
TW200826228A (en) | 2008-06-16 |
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