KR101314974B1 - 마이크로리소그래픽 조명 시스템 및 이를 구비한 투사 노출장치 - Google Patents

마이크로리소그래픽 조명 시스템 및 이를 구비한 투사 노출장치 Download PDF

Info

Publication number
KR101314974B1
KR101314974B1 KR1020087022233A KR20087022233A KR101314974B1 KR 101314974 B1 KR101314974 B1 KR 101314974B1 KR 1020087022233 A KR1020087022233 A KR 1020087022233A KR 20087022233 A KR20087022233 A KR 20087022233A KR 101314974 B1 KR101314974 B1 KR 101314974B1
Authority
KR
South Korea
Prior art keywords
illumination
raster
intensity
microlithographic
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020087022233A
Other languages
English (en)
Korean (ko)
Other versions
KR20090003216A (ko
Inventor
마르쿠스 데귄터
미카엘 라이
미카엘 게르하르트
브르노 톰
볼프강 징거
Original Assignee
칼 짜이스 에스엠티 게엠베하
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE200610042452 external-priority patent/DE102006042452A1/de
Application filed by 칼 짜이스 에스엠티 게엠베하 filed Critical 칼 짜이스 에스엠티 게엠베하
Publication of KR20090003216A publication Critical patent/KR20090003216A/ko
Application granted granted Critical
Publication of KR101314974B1 publication Critical patent/KR101314974B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70075—Homogenization of illumination intensity in the mask plane by using an integrator, e.g. fly's eye lens, facet mirror or glass rod, by using a diffusing optical element or by beam deflection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70083—Non-homogeneous intensity distribution in the mask plane
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/70108—Off-axis setting using a light-guiding element, e.g. diffractive optical elements [DOEs] or light guides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70191—Optical correction elements, filters or phase plates for controlling intensity, wavelength, polarisation, phase or the like
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70208—Multiple illumination paths, e.g. radiation distribution devices, microlens illumination systems, multiplexers or demultiplexers for single or multiple projection systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Microscoopes, Condenser (AREA)
KR1020087022233A 2006-02-17 2007-02-16 마이크로리소그래픽 조명 시스템 및 이를 구비한 투사 노출장치 Expired - Fee Related KR101314974B1 (ko)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US77485006P 2006-02-17 2006-02-17
US60/774,850 2006-02-17
US82329606P 2006-08-23 2006-08-23
US60/823,296 2006-08-23
DE200610042452 DE102006042452A1 (de) 2006-02-17 2006-09-09 Beleuchtungssystem für die Mikro-Lithographie, Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem, mikrolithographisches Herstellungsverfahren für Bauelemente sowie mit diesem Verfahren hergestelltes Bauelement
DE102006042452.2 2006-09-09
DE102006061711.8 2006-12-28
DE102006061711 2006-12-28
PCT/EP2007/001362 WO2007093433A1 (de) 2006-02-17 2007-02-16 Beleuchtungssystem für die mikro-lithographie, projektionsbelichtungsanlage mit einem derartigen beleuchtungssystem

Publications (2)

Publication Number Publication Date
KR20090003216A KR20090003216A (ko) 2009-01-09
KR101314974B1 true KR101314974B1 (ko) 2013-10-04

Family

ID=39769580

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087022233A Expired - Fee Related KR101314974B1 (ko) 2006-02-17 2007-02-16 마이크로리소그래픽 조명 시스템 및 이를 구비한 투사 노출장치

Country Status (5)

Country Link
US (2) US8705005B2 (https=)
EP (1) EP1984789B1 (https=)
JP (1) JP5068271B2 (https=)
KR (1) KR101314974B1 (https=)
WO (1) WO2007093433A1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005042005A1 (de) 2004-12-23 2006-07-06 Carl Zeiss Smt Ag Hochaperturiges Objektiv mit obskurierter Pupille
EP1984788B1 (en) 2006-02-17 2011-09-21 Carl Zeiss SMT GmbH Optical integrator for an illumination system of a microlithographic projection exposure apparatus
TWI456267B (zh) 2006-02-17 2014-10-11 卡爾蔡司Ｓｍｔ有限公司 用於微影投射曝光設備之照明系統
JP5068271B2 (ja) 2006-02-17 2012-11-07 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ照明システム、及びこの種の照明システムを含む投影露光装置
DE102007023411A1 (de) 2006-12-28 2008-07-03 Carl Zeiss Smt Ag Optisches Element, Beleuchtungsoptik für die Mikrolithographie mit mindestens einem derartigen optischen Element sowie Beleuchtungssystem mit einer derartigen Beleuchtungsoptik
EP2073061A3 (de) 2007-12-22 2011-02-23 LIMO Patentverwaltung GmbH & Co. KG Vorrichtung zur Ausleuchtung einer Fläche sowie Vorrichtung zur Beaufschlagung eines Arbeitsbereichs mit Licht
DE102009017941A1 (de) 2008-06-19 2009-12-24 Carl Zeiss Smt Ag Beleuchtungssystem für die Mikro-Lithographie sowie Projektionsbelichtungsanlage mit einem derartigen Beleuchtungssystem
EP2146248B1 (en) * 2008-07-16 2012-08-29 Carl Zeiss SMT GmbH Illumination system of a microlithographic projection exposure apparatus
DE102009006685A1 (de) 2009-01-29 2010-08-05 Carl Zeiss Smt Ag Beleuchtungssystem für die Mikro-Lithographie
WO2010108516A1 (en) * 2009-03-27 2010-09-30 Carl Zeiss Smt Ag Illumination optical system for euv microlithography and euv attenuator for an illumination optical system of this kind, illumination system and projection exposure installation having an illumination optical system of this kind
DE102010030089A1 (de) 2010-06-15 2011-12-15 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikro-Lithografie sowie Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik
KR101470769B1 (ko) 2010-08-30 2014-12-09 칼 짜이스 에스엠티 게엠베하 마이크로리소그래픽 투영 노광 장치의 조명 시스템
WO2012100791A1 (en) 2011-01-29 2012-08-02 Carl Zeiss Smt Gmbh Illumination system of a microlithographic projection exposure apparatus
WO2013018799A1 (ja) * 2011-08-04 2013-02-07 株式会社ニコン 照明装置
DE102011086944B4 (de) 2011-11-23 2015-07-23 Carl Zeiss Smt Gmbh Korrekturvorrichtung zur Beeinflussung einer Intensität eines Beleuchtungslicht-Bündels
DE102011086949A1 (de) 2011-11-23 2013-05-23 Carl Zeiss Smt Gmbh Beleuchtungs- und Verlagerungsvorrichtung für eine Projektionsbelichtungsanlage
DE102013213545A1 (de) 2013-07-10 2015-01-15 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithografie
DE102015201086A1 (de) 2014-02-05 2015-08-06 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithografie
DE102014203347B4 (de) 2014-02-25 2017-09-14 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Mikro-Lithografie sowie Projektionsbelichtungsanlage mit einer derartigen Beleuchtungsoptik
DE102014203348A1 (de) 2014-02-25 2015-08-27 Carl Zeiss Smt Gmbh Bündelverteilungsoptik, Beleuchtungsoptik mit einer derartigen Bündelverteilungsoptik, optisches System mit einer derartigen Beleuchtungsoptik sowie Projektionsbelichtungsanlage mit einem derartigen optischen System
JP6715241B2 (ja) * 2014-06-06 2020-07-01 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置の光学系
DE102014219112A1 (de) 2014-09-23 2016-03-24 Carl Zeiss Smt Gmbh Beleuchtungsoptik für die Projektionslithographie sowie Hohlwellenleiter-Komponente hierfür
DE102016205590A1 (de) * 2016-04-05 2017-10-05 Osram Gmbh Beleuchtungsvorrichtung zum Erzeugen einer rechteckigen Lichtverteilung in einer Beleuchtungsebene
EP3570109A1 (en) * 2018-05-14 2019-11-20 ASML Netherlands B.V. Illumination source for an inspection apparatus, inspection apparatus and inspection method

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020136351A1 (en) 2000-10-27 2002-09-26 Wolfgang Singer Illumination system with variable adjustment of the illumination
WO2003029875A2 (de) 2001-09-28 2003-04-10 Carl Zeiss Microelectronic Systems Gmbh Beleuchtungsanordnung
JP2004056103A (ja) 2002-05-27 2004-02-19 Nikon Corp 照明光学装置、露光装置および露光方法

Family Cites Families (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3343868A1 (de) 1983-12-03 1985-06-13 Zeiss Carl Fa Objektiv mit kegelschnittflaechen fuer die mikrozonenabbildung
JPS60232552A (ja) * 1984-05-02 1985-11-19 Canon Inc 照明光学系
US5003567A (en) 1989-02-09 1991-03-26 Hawryluk Andrew M Soft x-ray reduction camera for submicron lithography
JP2691226B2 (ja) 1989-07-10 1997-12-17 株式会社ニコン 赤外線撮像光学装置
US5212588A (en) 1991-04-09 1993-05-18 The United States Of America As Represented By The United States Department Of Energy Reflective optical imaging system for extreme ultraviolet wavelengths
DE4124311A1 (de) 1991-07-23 1993-01-28 Zeiss Carl Fa Anordnung zur kohaerenzreduktion und strahlformung eines laserstrahls
US5420417A (en) * 1991-10-08 1995-05-30 Nikon Corporation Projection exposure apparatus with light distribution adjustment
JP3208863B2 (ja) * 1992-09-04 2001-09-17 株式会社ニコン 照明方法及び装置、露光方法、並びに半導体素子の製造方法
US5461456A (en) * 1992-11-24 1995-10-24 General Signal Corporation Spatial uniformity varier for microlithographic illuminator
US5581605A (en) 1993-02-10 1996-12-03 Nikon Corporation Optical element, production method of optical element, optical system, and optical apparatus
JP3440458B2 (ja) 1993-06-18 2003-08-25 株式会社ニコン 照明装置、パターン投影方法及び半導体素子の製造方法
DE4327656A1 (de) 1993-08-17 1995-02-23 Steinheil Optronik Gmbh Infrarot-Objektiv
DE19520563A1 (de) 1995-06-06 1996-12-12 Zeiss Carl Fa Beleuchtungseinrichtung für ein Projektions-Mikrolithographie-Gerät
US5815310A (en) 1995-12-12 1998-09-29 Svg Lithography Systems, Inc. High numerical aperture ring field optical reduction system
JP3041328B2 (ja) 1996-03-21 2000-05-15 株式会社那須板金工業 平板葺き屋根構造
US5686728A (en) 1996-05-01 1997-11-11 Lucent Technologies Inc Projection lithography system and method using all-reflective optical elements
JPH11110791A (ja) 1997-09-30 1999-04-23 Pioneer Electron Corp 光情報記録媒体の再生ピックアップ装置
EP1039510A4 (en) 1997-11-14 2003-11-12 Nikon Corp EXPOSURE DEVICE, MANUFACTURING METHOD THEREOF, AND EXPOSURE METHOD
US6240158B1 (en) 1998-02-17 2001-05-29 Nikon Corporation X-ray projection exposure apparatus with a position detection optical system
JP4238390B2 (ja) 1998-02-27 2009-03-18 株式会社ニコン 照明装置、該照明装置を備えた露光装置および該露光装置を用いて半導体デバイスを製造する方法
DE19812803B4 (de) 1998-03-16 2004-09-09 Gf Messtechnik Gmbh Verfahren zur Herstellung eines Raumfilter-Arrays und Raumfilter-Array
EP1069600A4 (en) * 1998-03-24 2002-11-20 Nikon Corp ILLUMINATOR, EXPOSURE METHOD AND APPARATUS, METHOD FOR MANUFACTURING SAID DEVICE
EP0955641B1 (de) 1998-05-05 2004-04-28 Carl Zeiss Beleuchtungssystem insbesondere für die EUV-Lithographie
US6859328B2 (en) 1998-05-05 2005-02-22 Carl Zeiss Semiconductor Illumination system particularly for microlithography
DE10138313A1 (de) 2001-01-23 2002-07-25 Zeiss Carl Kollektor für Beleuchtugnssysteme mit einer Wellenlänge < 193 nm
US6396067B1 (en) 1998-05-06 2002-05-28 Koninklijke Philips Electronics N.V. Mirror projection system for a scanning lithographic projection apparatus, and lithographic apparatus comprising such a system
DE19923609A1 (de) 1998-05-30 1999-12-02 Zeiss Carl Fa Ringfeld-4-Spiegelsysteme mit konvexem Primärspiegel für die EUV-Lithographie
EP0964307A3 (en) 1998-06-08 2001-09-05 Nikon Corporation Projection exposure apparatus and method
US6069739A (en) 1998-06-30 2000-05-30 Intel Corporation Method and lens arrangement to improve imaging performance of microlithography exposure tool
KR20010075605A (ko) 1998-11-06 2001-08-09 오노 시게오 노광방법 및 노광장치
DE10040898A1 (de) * 2000-08-18 2002-02-28 Zeiss Carl Beleuchtungssystem für die Mikrolithographie
US6445442B2 (en) * 1998-12-08 2002-09-03 Carl-Zeiss-Stiftung Projection-microlithographic device
DE19856575A1 (de) * 1998-12-08 2000-09-14 Zeiss Carl Fa Projektions-Mikrolithographiegerät
US6195201B1 (en) 1999-01-27 2001-02-27 Svg Lithography Systems, Inc. Reflective fly's eye condenser for EUV lithography
CA2333179C (en) 1999-03-15 2007-02-06 Matsushita Electric Industrial Co., Ltd. Convergent device, optical head, optical information recording/reproducing and optical information recording/reproducing method
US6033079A (en) 1999-03-15 2000-03-07 Hudyma; Russell High numerical aperture ring field projection system for extreme ultraviolet lithography
JP2000286189A (ja) 1999-03-31 2000-10-13 Nikon Corp 露光装置および露光方法ならびにデバイス製造方法
JP4717974B2 (ja) 1999-07-13 2011-07-06 株式会社ニコン 反射屈折光学系及び該光学系を備える投影露光装置
JP2001185480A (ja) 1999-10-15 2001-07-06 Nikon Corp 投影光学系及び該光学系を備える投影露光装置
EP1093021A3 (en) 1999-10-15 2004-06-30 Nikon Corporation Projection optical system as well as equipment and methods making use of said system
US6621557B2 (en) 2000-01-13 2003-09-16 Nikon Corporation Projection exposure apparatus and exposure methods
US6867913B2 (en) 2000-02-14 2005-03-15 Carl Zeiss Smt Ag 6-mirror microlithography projection objective
EP1307442A2 (de) 2000-08-02 2003-05-07 Basf Aktiengesellschaft Verfahren zur herstellung von liponsäure und dihydroliponsäure
DE10052289A1 (de) 2000-10-20 2002-04-25 Zeiss Carl 8-Spiegel-Mikrolithographie-Projektionsobjektiv
JP2002158157A (ja) * 2000-11-17 2002-05-31 Nikon Corp 照明光学装置および露光装置並びにマイクロデバイスの製造方法
US20020171047A1 (en) * 2001-03-28 2002-11-21 Chan Kin Foeng Integrated laser diode array and applications
JP3746436B2 (ja) * 2001-05-10 2006-02-15 ミサワホーム株式会社 木質様成形品の製造方法および木質様成形品製造装置
DE10130212A1 (de) 2001-06-22 2003-01-02 Zeiss Carl Jena Gmbh Objektiv
DE10139177A1 (de) 2001-08-16 2003-02-27 Zeiss Carl Objektiv mit Pupillenobskuration
JP4859311B2 (ja) * 2001-09-17 2012-01-25 株式会社リコー レーザ照明光学系、該光学系を用いた露光装置、レーザ加工機、及び投射装置
JP2003114387A (ja) 2001-10-04 2003-04-18 Nikon Corp 反射屈折光学系および該光学系を備える投影露光装置
JP3698133B2 (ja) 2002-08-30 2005-09-21 ヤマハ株式会社 マイクロレンズアレイ
JP3938040B2 (ja) 2002-12-27 2007-06-27 キヤノン株式会社 反射型投影光学系、露光装置及びデバイス製造方法
JP2004252358A (ja) 2003-02-21 2004-09-09 Canon Inc 反射型投影光学系及び露光装置
JP2005003943A (ja) 2003-06-12 2005-01-06 Fuji Xerox Co Ltd 光学素子およびその製造方法
US7911584B2 (en) 2003-07-30 2011-03-22 Carl Zeiss Smt Gmbh Illumination system for microlithography
US7408616B2 (en) 2003-09-26 2008-08-05 Carl Zeiss Smt Ag Microlithographic exposure method as well as a projection exposure system for carrying out the method
ATE511668T1 (de) 2004-02-17 2011-06-15 Zeiss Carl Smt Gmbh Beleuchtungssystem für eine mikrolithographische projektionsbelichtungsvorrichtung
US20050237623A1 (en) * 2004-02-26 2005-10-27 Damian Fiolka Optical unit for an illumination system of a microlithographic projection exposure apparatus
JP4864869B2 (ja) 2004-02-26 2012-02-01 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ投影露光装置のための照明系
US20070285644A1 (en) 2004-09-13 2007-12-13 Carl Zeiss Smt Ag Microlithographic Projection Exposure Apparatus
DE102005042005A1 (de) 2004-12-23 2006-07-06 Carl Zeiss Smt Ag Hochaperturiges Objektiv mit obskurierter Pupille
WO2006084478A1 (de) 2005-02-08 2006-08-17 Hentze-Lissotschenko Patentverwaltungs Gmbh & Co. Kg Vorrichtung zur homogenisierung von licht und verfahren zur herstellung der vorrichtung
US8873151B2 (en) 2005-04-26 2014-10-28 Carl Zeiss Smt Gmbh Illumination system for a microlithgraphic exposure apparatus
US7470556B2 (en) * 2005-06-28 2008-12-30 Aptina Imaging Corporation Process for creating tilted microlens
JP5068271B2 (ja) 2006-02-17 2012-11-07 カール・ツァイス・エスエムティー・ゲーエムベーハー マイクロリソグラフィ照明システム、及びこの種の照明システムを含む投影露光装置
DE102007023411A1 (de) 2006-12-28 2008-07-03 Carl Zeiss Smt Ag Optisches Element, Beleuchtungsoptik für die Mikrolithographie mit mindestens einem derartigen optischen Element sowie Beleuchtungssystem mit einer derartigen Beleuchtungsoptik
JP5035747B2 (ja) 2007-03-16 2012-09-26 株式会社ニコン オプティカルインテグレータ、照明光学装置、露光装置、およびデバイス製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020136351A1 (en) 2000-10-27 2002-09-26 Wolfgang Singer Illumination system with variable adjustment of the illumination
WO2003029875A2 (de) 2001-09-28 2003-04-10 Carl Zeiss Microelectronic Systems Gmbh Beleuchtungsanordnung
JP2004056103A (ja) 2002-05-27 2004-02-19 Nikon Corp 照明光学装置、露光装置および露光方法

Also Published As

Publication number Publication date
JP5068271B2 (ja) 2012-11-07
US8705005B2 (en) 2014-04-22
US20140176930A1 (en) 2014-06-26
JP2009527113A (ja) 2009-07-23
KR20090003216A (ko) 2009-01-09
US20090021715A1 (en) 2009-01-22
US9341953B2 (en) 2016-05-17
EP1984789A1 (de) 2008-10-29
WO2007093433A1 (de) 2007-08-23
EP1984789B1 (de) 2013-11-06

Similar Documents

Publication Publication Date Title
KR101314974B1 (ko) 마이크로리소그래픽 조명 시스템 및 이를 구비한 투사 노출장치
CN101421674B (zh) 微光刻照射系统，包括这种照射系统的投影曝光设备
US10599041B2 (en) Facet mirror
KR101517645B1 (ko) 마이크로리소그래피용 조명 광학소자
KR101470769B1 (ko) 마이크로리소그래픽 투영 노광 장치의 조명 시스템
JP5077724B2 (ja) マイクロリソグラフィツール用の反射照明システム
US20110228244A1 (en) Illumination optical system for projection lithography
CN102301281B (zh) 用于微光刻的照明系统
TW200900874A (en) Lithographic apparatus and method
JP2015519009A5 (https=)
JP2007500432A (ja) マイクロリソグラフィの照明システム
US20080143987A1 (en) Exposure apparatus and device fabrication method
US20090268189A1 (en) Masks, lithography device and semiconductor component
US9933704B2 (en) Microlithography illumination optical system and microlithography projection exposure apparatus including same
US10928733B2 (en) Illumination optic for projection lithography
CN107636539A (zh) 微光刻投射设备的操作方法
JP5585761B2 (ja) マイクロリソグラフィのための光学要素及び照明光学系
US9915876B2 (en) EUV mirror and optical system comprising EUV mirror
US10018917B2 (en) Illumination optical unit for EUV projection lithography

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20160915

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20170915

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20180914

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20190928

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20190928

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000