KR101283334B1 - 비수성 용액으로부터의 무전해 석출 - Google Patents

비수성 용액으로부터의 무전해 석출 Download PDF

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Publication number
KR101283334B1
KR101283334B1 KR1020117014064A KR20117014064A KR101283334B1 KR 101283334 B1 KR101283334 B1 KR 101283334B1 KR 1020117014064 A KR1020117014064 A KR 1020117014064A KR 20117014064 A KR20117014064 A KR 20117014064A KR 101283334 B1 KR101283334 B1 KR 101283334B1
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South Korea
Prior art keywords
copper
aqueous
solution
plating solution
copper plating
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Korean (ko)
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KR20110112300A (ko
Inventor
유지니우스 노르쿠스
야네 야시아우스키에네
예즈디 도르디
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램 리써치 코포레이션
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemically Coating (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
KR1020117014064A 2008-12-18 2009-12-10 비수성 용액으로부터의 무전해 석출 Active KR101283334B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/338,998 US7686875B2 (en) 2006-05-11 2008-12-18 Electroless deposition from non-aqueous solutions
US12/338,998 2008-12-18
PCT/US2009/067594 WO2010080331A2 (en) 2008-12-18 2009-12-10 Electroless depositions from non-aqueous solutions

Publications (2)

Publication Number Publication Date
KR20110112300A KR20110112300A (ko) 2011-10-12
KR101283334B1 true KR101283334B1 (ko) 2013-07-09

Family

ID=42317054

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117014064A Active KR101283334B1 (ko) 2008-12-18 2009-12-10 비수성 용액으로부터의 무전해 석출

Country Status (7)

Country Link
US (1) US7686875B2 (https=)
JP (1) JP5628199B2 (https=)
KR (1) KR101283334B1 (https=)
CN (1) CN102265384B (https=)
SG (1) SG171838A1 (https=)
TW (1) TWI443223B (https=)
WO (1) WO2010080331A2 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8298325B2 (en) * 2006-05-11 2012-10-30 Lam Research Corporation Electroless deposition from non-aqueous solutions
JP4755573B2 (ja) * 2006-11-30 2011-08-24 東京応化工業株式会社 処理装置および処理方法、ならびに表面処理治具
US7794530B2 (en) * 2006-12-22 2010-09-14 Lam Research Corporation Electroless deposition of cobalt alloys
JP4971078B2 (ja) * 2007-08-30 2012-07-11 東京応化工業株式会社 表面処理装置
JP5571435B2 (ja) * 2010-03-31 2014-08-13 Ｊｘ日鉱日石金属株式会社 銀メッキ銅微粉の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100475403B1 (ko) * 2002-05-28 2005-03-15 재단법인서울대학교산학협력재단 반도체 배선용 구리 박막 형성방법
US7297190B1 (en) * 2006-06-28 2007-11-20 Lam Research Corporation Plating solutions for electroless deposition of copper
KR20080083790A (ko) * 2007-03-13 2008-09-19 삼성전자주식회사 무전해 구리 도금액, 그의 제조방법 및 무전해 구리도금방법

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3653953A (en) * 1970-01-26 1972-04-04 North American Rockwell Nonaqueous electroless plating
US3635761A (en) * 1970-05-05 1972-01-18 Mobil Oil Corp Electroless deposition of metals
US3962494A (en) * 1971-07-29 1976-06-08 Photocircuits Division Of Kollmorgan Corporation Sensitized substrates for chemical metallization
US4301196A (en) * 1978-09-13 1981-11-17 Kollmorgen Technologies Corp. Electroless copper deposition process having faster plating rates
DE3148330A1 (de) * 1981-12-07 1983-06-09 Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen Verfahren zur stromlosen abscheidung von edelmetallschichten auf oberflaechen von unedlen metallen
JPH03215676A (ja) * 1990-01-20 1991-09-20 Tokin Corp 無電解めっき剤，及びそれを用いた無電解めっき方法
DE4440299A1 (de) * 1994-11-11 1996-05-15 Metallgesellschaft Ag Verfahren zur stromlosen Abscheidung von Kupferüberzügen auf Eisen- und Eisenlegierungsoberflächen
US6291025B1 (en) * 1999-06-04 2001-09-18 Argonide Corporation Electroless coatings formed from organic liquids
JP2001020077A (ja) * 1999-07-07 2001-01-23 Sony Corp 無電解めっき方法及び無電解めっき液
WO2001029283A1 (fr) * 1999-10-19 2001-04-26 Ebara Corporation Procede de placage, procede de formation de cablage, et dispositifs correspondants
US7147767B2 (en) * 2002-12-16 2006-12-12 3M Innovative Properties Company Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor
US7306662B2 (en) * 2006-05-11 2007-12-11 Lam Research Corporation Plating solution for electroless deposition of copper
US7752996B2 (en) * 2006-05-11 2010-07-13 Lam Research Corporation Apparatus for applying a plating solution for electroless deposition

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100475403B1 (ko) * 2002-05-28 2005-03-15 재단법인서울대학교산학협력재단 반도체 배선용 구리 박막 형성방법
US7297190B1 (en) * 2006-06-28 2007-11-20 Lam Research Corporation Plating solutions for electroless deposition of copper
KR20080083790A (ko) * 2007-03-13 2008-09-19 삼성전자주식회사 무전해 구리 도금액, 그의 제조방법 및 무전해 구리도금방법

Also Published As

Publication number Publication date
WO2010080331A2 (en) 2010-07-15
KR20110112300A (ko) 2011-10-12
TW201033403A (en) 2010-09-16
TWI443223B (zh) 2014-07-01
US7686875B2 (en) 2010-03-30
US20090095198A1 (en) 2009-04-16
WO2010080331A3 (en) 2010-09-10
JP5628199B2 (ja) 2014-11-19
CN102265384B (zh) 2015-07-08
SG171838A1 (en) 2011-07-28
JP2012512967A (ja) 2012-06-07
CN102265384A (zh) 2011-11-30

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