TWI443223B - 由非水溶液之無電沉積 - Google Patents
由非水溶液之無電沉積 Download PDFInfo
- Publication number
- TWI443223B TWI443223B TW098143687A TW98143687A TWI443223B TW I443223 B TWI443223 B TW I443223B TW 098143687 A TW098143687 A TW 098143687A TW 98143687 A TW98143687 A TW 98143687A TW I443223 B TWI443223 B TW I443223B
- Authority
- TW
- Taiwan
- Prior art keywords
- copper
- aqueous
- copper plating
- plating solution
- solution
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
- H10P14/46—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a liquid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemically Coating (AREA)
- Electroplating And Plating Baths Therefor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/338,998 US7686875B2 (en) | 2006-05-11 | 2008-12-18 | Electroless deposition from non-aqueous solutions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201033403A TW201033403A (en) | 2010-09-16 |
| TWI443223B true TWI443223B (zh) | 2014-07-01 |
Family
ID=42317054
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098143687A TWI443223B (zh) | 2008-12-18 | 2009-12-18 | 由非水溶液之無電沉積 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US7686875B2 (https=) |
| JP (1) | JP5628199B2 (https=) |
| KR (1) | KR101283334B1 (https=) |
| CN (1) | CN102265384B (https=) |
| SG (1) | SG171838A1 (https=) |
| TW (1) | TWI443223B (https=) |
| WO (1) | WO2010080331A2 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8298325B2 (en) * | 2006-05-11 | 2012-10-30 | Lam Research Corporation | Electroless deposition from non-aqueous solutions |
| JP4755573B2 (ja) * | 2006-11-30 | 2011-08-24 | 東京応化工業株式会社 | 処理装置および処理方法、ならびに表面処理治具 |
| US7794530B2 (en) * | 2006-12-22 | 2010-09-14 | Lam Research Corporation | Electroless deposition of cobalt alloys |
| JP4971078B2 (ja) * | 2007-08-30 | 2012-07-11 | 東京応化工業株式会社 | 表面処理装置 |
| JP5571435B2 (ja) * | 2010-03-31 | 2014-08-13 | Jx日鉱日石金属株式会社 | 銀メッキ銅微粉の製造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3653953A (en) * | 1970-01-26 | 1972-04-04 | North American Rockwell | Nonaqueous electroless plating |
| US3635761A (en) * | 1970-05-05 | 1972-01-18 | Mobil Oil Corp | Electroless deposition of metals |
| US3962494A (en) * | 1971-07-29 | 1976-06-08 | Photocircuits Division Of Kollmorgan Corporation | Sensitized substrates for chemical metallization |
| US4301196A (en) * | 1978-09-13 | 1981-11-17 | Kollmorgen Technologies Corp. | Electroless copper deposition process having faster plating rates |
| DE3148330A1 (de) * | 1981-12-07 | 1983-06-09 | Max Planck Gesellschaft zur Förderung der Wissenschaften e.V., 3400 Göttingen | Verfahren zur stromlosen abscheidung von edelmetallschichten auf oberflaechen von unedlen metallen |
| JPH03215676A (ja) * | 1990-01-20 | 1991-09-20 | Tokin Corp | 無電解めっき剤,及びそれを用いた無電解めっき方法 |
| DE4440299A1 (de) * | 1994-11-11 | 1996-05-15 | Metallgesellschaft Ag | Verfahren zur stromlosen Abscheidung von Kupferüberzügen auf Eisen- und Eisenlegierungsoberflächen |
| US6291025B1 (en) * | 1999-06-04 | 2001-09-18 | Argonide Corporation | Electroless coatings formed from organic liquids |
| JP2001020077A (ja) * | 1999-07-07 | 2001-01-23 | Sony Corp | 無電解めっき方法及び無電解めっき液 |
| WO2001029283A1 (fr) * | 1999-10-19 | 2001-04-26 | Ebara Corporation | Procede de placage, procede de formation de cablage, et dispositifs correspondants |
| KR100475403B1 (ko) * | 2002-05-28 | 2005-03-15 | 재단법인서울대학교산학협력재단 | 반도체 배선용 구리 박막 형성방법 |
| US7147767B2 (en) * | 2002-12-16 | 2006-12-12 | 3M Innovative Properties Company | Plating solutions for electrochemical or chemical deposition of copper interconnects and methods therefor |
| US7306662B2 (en) * | 2006-05-11 | 2007-12-11 | Lam Research Corporation | Plating solution for electroless deposition of copper |
| US7297190B1 (en) * | 2006-06-28 | 2007-11-20 | Lam Research Corporation | Plating solutions for electroless deposition of copper |
| US7752996B2 (en) * | 2006-05-11 | 2010-07-13 | Lam Research Corporation | Apparatus for applying a plating solution for electroless deposition |
| KR20080083790A (ko) * | 2007-03-13 | 2008-09-19 | 삼성전자주식회사 | 무전해 구리 도금액, 그의 제조방법 및 무전해 구리도금방법 |
-
2008
- 2008-12-18 US US12/338,998 patent/US7686875B2/en active Active
-
2009
- 2009-12-10 KR KR1020117014064A patent/KR101283334B1/ko active Active
- 2009-12-10 JP JP2011542275A patent/JP5628199B2/ja active Active
- 2009-12-10 WO PCT/US2009/067594 patent/WO2010080331A2/en not_active Ceased
- 2009-12-10 SG SG2011038544A patent/SG171838A1/en unknown
- 2009-12-10 CN CN200980150019.1A patent/CN102265384B/zh active Active
- 2009-12-18 TW TW098143687A patent/TWI443223B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010080331A2 (en) | 2010-07-15 |
| KR20110112300A (ko) | 2011-10-12 |
| KR101283334B1 (ko) | 2013-07-09 |
| TW201033403A (en) | 2010-09-16 |
| US7686875B2 (en) | 2010-03-30 |
| US20090095198A1 (en) | 2009-04-16 |
| WO2010080331A3 (en) | 2010-09-10 |
| JP5628199B2 (ja) | 2014-11-19 |
| CN102265384B (zh) | 2015-07-08 |
| SG171838A1 (en) | 2011-07-28 |
| JP2012512967A (ja) | 2012-06-07 |
| CN102265384A (zh) | 2011-11-30 |
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