KR101270378B1 - 기판 처리 방법 및 그 방법을 실행하는 프로그램을 기억하는 기억 매체 - Google Patents

기판 처리 방법 및 그 방법을 실행하는 프로그램을 기억하는 기억 매체 Download PDF

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KR101270378B1
KR101270378B1 KR1020110112978A KR20110112978A KR101270378B1 KR 101270378 B1 KR101270378 B1 KR 101270378B1 KR 1020110112978 A KR1020110112978 A KR 1020110112978A KR 20110112978 A KR20110112978 A KR 20110112978A KR 101270378 B1 KR101270378 B1 KR 101270378B1
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South Korea
Prior art keywords
substrate
heat transfer
transfer gas
flow rate
processing
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KR1020110112978A
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English (en)
Korean (ko)
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KR20120046702A (ko
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아츠키 후루야
료 사토
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020110112978A 2010-11-02 2011-11-01 기판 처리 방법 및 그 방법을 실행하는 프로그램을 기억하는 기억 매체 KR101270378B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010246055A JP5689283B2 (ja) 2010-11-02 2010-11-02 基板処理方法及びその方法を実行するプログラムを記憶する記憶媒体
JPJP-P-2010-246055 2010-11-02

Publications (2)

Publication Number Publication Date
KR20120046702A KR20120046702A (ko) 2012-05-10
KR101270378B1 true KR101270378B1 (ko) 2013-06-05

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KR1020110112978A KR101270378B1 (ko) 2010-11-02 2011-11-01 기판 처리 방법 및 그 방법을 실행하는 프로그램을 기억하는 기억 매체

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JP (1) JP5689283B2 (ja)
KR (1) KR101270378B1 (ja)
CN (1) CN102468154B (ja)
TW (1) TWI511220B (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5884016B2 (ja) * 2013-02-18 2016-03-15 パナソニックＩｐマネジメント株式会社 基板位置決め方法
JP6184760B2 (ja) * 2013-06-11 2017-08-23 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US9613839B2 (en) * 2014-11-19 2017-04-04 Varian Semiconductor Equipment Associates, Inc. Control of workpiece temperature via backside gas flow
JP2016225439A (ja) * 2015-05-29 2016-12-28 東京エレクトロン株式会社 プラズマ処理装置及び基板剥離検知方法
CN105185283B (zh) * 2015-10-23 2017-12-08 京东方科技集团股份有限公司 检测装置、基板架、检测基板架上基板位置的方法
US10555412B2 (en) * 2018-05-10 2020-02-04 Applied Materials, Inc. Method of controlling ion energy distribution using a pulse generator with a current-return output stage
JP6971199B2 (ja) * 2018-05-31 2021-11-24 東京エレクトロン株式会社 基板処理方法および基板処理装置
KR102198929B1 (ko) * 2019-02-28 2021-01-06 세메스 주식회사 기판 처리 장치의 가스 공급 유닛
US11854911B2 (en) 2021-02-25 2023-12-26 Applied Materials, Inc. Methods, systems, and apparatus for conducting chucking operations using an adjusted chucking voltage if a process shift occurs

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04359539A (ja) * 1991-06-06 1992-12-11 Fujitsu Ltd 静電吸着装置
JPH05299379A (ja) * 1992-04-21 1993-11-12 Mitsubishi Electric Corp 温度調整装置およびその方法
JPH11333277A (ja) * 1998-03-25 1999-12-07 Ckd Corp 真空圧力制御システム

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5673750A (en) * 1990-05-19 1997-10-07 Hitachi, Ltd. Vacuum processing method and apparatus
JPH07249586A (ja) * 1993-12-22 1995-09-26 Tokyo Electron Ltd 処理装置及びその製造方法並びに被処理体の処理方法
JPH10240356A (ja) * 1997-02-21 1998-09-11 Anelva Corp 基板処理装置の基板温度制御法と基板温度制御性判定法
JP4030030B2 (ja) * 1998-04-24 2008-01-09 キヤノンアネルバ株式会社 静電吸着ホルダの吸着力検出方法と装置
US6320736B1 (en) * 1999-05-17 2001-11-20 Applied Materials, Inc. Chuck having pressurized zones of heat transfer gas
JP2001338914A (ja) * 2000-05-30 2001-12-07 Tokyo Electron Ltd ガス導入機構およびガス導入方法、ガスリーク検出方法、ならびに真空処理装置
US20040011468A1 (en) * 2000-05-30 2004-01-22 Jun Hirose Gas introduction system for temperature adjustment of object to be processed
JP4421874B2 (ja) * 2003-10-31 2010-02-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置
JP4753888B2 (ja) * 2007-01-15 2011-08-24 東京エレクトロン株式会社 基板保持機構及びプラズマ処理装置
JP2009176982A (ja) * 2008-01-25 2009-08-06 Hitachi Kokusai Electric Inc 基板処理装置及び基板処理方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04359539A (ja) * 1991-06-06 1992-12-11 Fujitsu Ltd 静電吸着装置
JPH05299379A (ja) * 1992-04-21 1993-11-12 Mitsubishi Electric Corp 温度調整装置およびその方法
JPH11333277A (ja) * 1998-03-25 1999-12-07 Ckd Corp 真空圧力制御システム

Also Published As

Publication number Publication date
TWI511220B (zh) 2015-12-01
CN102468154B (zh) 2014-06-18
JP2012099634A (ja) 2012-05-24
TW201236097A (en) 2012-09-01
JP5689283B2 (ja) 2015-03-25
KR20120046702A (ko) 2012-05-10
CN102468154A (zh) 2012-05-23

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