KR101259703B1 - 니켈-인 연마 방법 - Google Patents

니켈-인 연마 방법 Download PDF

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Publication number
KR101259703B1
KR101259703B1 KR1020117003011A KR20117003011A KR101259703B1 KR 101259703 B1 KR101259703 B1 KR 101259703B1 KR 1020117003011 A KR1020117003011 A KR 1020117003011A KR 20117003011 A KR20117003011 A KR 20117003011A KR 101259703 B1 KR101259703 B1 KR 101259703B1
Authority
KR
South Korea
Prior art keywords
polishing
nickel
acid
polishing composition
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020117003011A
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English (en)
Korean (ko)
Other versions
KR20110046465A (ko
Inventor
벤카타라마난 발라수브라마니암
핑-하 예웅
Original Assignee
캐보트 마이크로일렉트로닉스 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐보트 마이크로일렉트로닉스 코포레이션 filed Critical 캐보트 마이크로일렉트로닉스 코포레이션
Publication of KR20110046465A publication Critical patent/KR20110046465A/ko
Application granted granted Critical
Publication of KR101259703B1 publication Critical patent/KR101259703B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
KR1020117003011A 2008-07-10 2009-07-06 니켈-인 연마 방법 Expired - Fee Related KR101259703B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/170,954 2008-07-10
US12/170,954 US8247326B2 (en) 2008-07-10 2008-07-10 Method of polishing nickel-phosphorous
PCT/US2009/003955 WO2010005543A2 (en) 2008-07-10 2009-07-06 Method of polishing nickel-phosphorous

Publications (2)

Publication Number Publication Date
KR20110046465A KR20110046465A (ko) 2011-05-04
KR101259703B1 true KR101259703B1 (ko) 2013-05-06

Family

ID=41505533

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117003011A Expired - Fee Related KR101259703B1 (ko) 2008-07-10 2009-07-06 니켈-인 연마 방법

Country Status (8)

Country Link
US (1) US8247326B2 (enExample)
EP (1) EP2311074B1 (enExample)
JP (1) JP5508413B2 (enExample)
KR (1) KR101259703B1 (enExample)
CN (1) CN102089865B (enExample)
MY (1) MY149715A (enExample)
TW (1) TWI397578B (enExample)
WO (1) WO2010005543A2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
WO2014061417A1 (ja) * 2012-10-16 2014-04-24 日立化成株式会社 Ｃｍｐ用研磨液、貯蔵液及び研磨方法
WO2015057433A1 (en) 2013-10-18 2015-04-23 Cabot Microelectronics Corporation Polishing composition and method for nickel-phosphorous coated memory disks
US10358579B2 (en) * 2013-12-03 2019-07-23 Cabot Microelectronics Corporation CMP compositions and methods for polishing nickel phosphorous surfaces
US9909032B2 (en) * 2014-01-15 2018-03-06 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks
JP6511039B2 (ja) 2014-03-28 2019-05-08 山口精研工業株式会社 研磨剤組成物、および磁気ディスク基板の研磨方法
MY186419A (en) * 2014-03-28 2021-07-22 Yamaguchi Seiken Kogyo Co Ltd Polishing composition and method for polishing magnetic disk substrate
TWI563073B (en) * 2014-06-03 2016-12-21 Cabot Microelectronics Corp Cmp compositions and methods for polishing rigid disk surfaces
JP6775511B2 (ja) 2015-09-25 2020-10-28 山口精研工業株式会社 研磨剤組成物、および磁気ディスク基板の研磨方法
JP6775453B2 (ja) 2017-03-23 2020-10-28 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物
JP2019016417A (ja) 2017-07-04 2019-01-31 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物
JP7034667B2 (ja) 2017-10-24 2022-03-14 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物
US20190153262A1 (en) * 2017-11-20 2019-05-23 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced surface scratching
US10698846B2 (en) * 2018-11-07 2020-06-30 Realtek Semiconductor Corporation DDR SDRAM physical layer interface circuit and DDR SDRAM control device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6332831B1 (en) 2000-04-06 2001-12-25 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
JP2004204152A (ja) 2002-12-26 2004-07-22 Kao Corp 研磨液組成物
US20050136807A1 (en) 2003-08-08 2005-06-23 Kao Corporation Polishing composition for magnetic disk

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4090589B2 (ja) 1998-09-01 2008-05-28 株式会社フジミインコーポレーテッド 研磨用組成物
WO2000024842A1 (en) 1998-10-23 2000-05-04 Arch Specialty Chemicals, Inc. A chemical mechanical polishing slurry system having an activator solution
JP4021133B2 (ja) * 1999-07-22 2007-12-12 花王株式会社 研磨液組成物
US6258140B1 (en) * 1999-09-27 2001-07-10 Fujimi America Inc. Polishing composition
US6468913B1 (en) 2000-07-08 2002-10-22 Arch Specialty Chemicals, Inc. Ready-to-use stable chemical-mechanical polishing slurries
JP4231632B2 (ja) 2001-04-27 2009-03-04 花王株式会社 研磨液組成物
US20030104770A1 (en) 2001-04-30 2003-06-05 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
US20040159050A1 (en) 2001-04-30 2004-08-19 Arch Specialty Chemicals, Inc. Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers
JP3875156B2 (ja) * 2002-08-07 2007-01-31 花王株式会社 ロールオフ低減剤
US7300601B2 (en) 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US7147682B2 (en) 2002-12-26 2006-12-12 Kao Corporation Polishing composition
TWI254741B (en) 2003-02-05 2006-05-11 Kao Corp Polishing composition
JP4202157B2 (ja) * 2003-02-28 2008-12-24 株式会社フジミインコーポレーテッド 研磨用組成物
US20040232379A1 (en) * 2003-05-20 2004-11-25 Ameen Joseph G. Multi-oxidizer-based slurry for nickel hard disk planarization
GB2402941B (en) 2003-06-09 2007-06-27 Kao Corp Method for manufacturing substrate
JP4707311B2 (ja) * 2003-08-08 2011-06-22 花王株式会社 磁気ディスク用基板
GB2435263B (en) * 2003-08-08 2007-11-28 Corporation Kao Substrate for magnetic disk and polishing method therefor
US20050079803A1 (en) 2003-10-10 2005-04-14 Siddiqui Junaid Ahmed Chemical-mechanical planarization composition having PVNO and associated method for use
US7153335B2 (en) 2003-10-10 2006-12-26 Dupont Air Products Nanomaterials Llc Tunable composition and method for chemical-mechanical planarization with aspartic acid/tolyltriazole
US7514363B2 (en) 2003-10-23 2009-04-07 Dupont Air Products Nanomaterials Llc Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
JP2005286048A (ja) 2004-03-29 2005-10-13 Nitta Haas Inc 半導体研磨用組成物
KR100672940B1 (ko) * 2004-08-03 2007-01-24 삼성전자주식회사 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법
US7563383B2 (en) * 2004-10-12 2009-07-21 Cabot Mircroelectronics Corporation CMP composition with a polymer additive for polishing noble metals
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
KR100662546B1 (ko) 2005-03-07 2006-12-28 제일모직주식회사 실리콘 웨이퍼의 표면 품질을 개선하는 연마용 슬러리 조성물 및 이를 이용한 연마방법
US20060213868A1 (en) 2005-03-23 2006-09-28 Siddiqui Junaid A Low-dishing composition and method for chemical-mechanical planarization with branched-alkylphenol-substituted benzotriazole
US20070209288A1 (en) 2005-03-28 2007-09-13 Yoshiharu Ohta Semiconductor Polishing Composition
US20090127501A1 (en) * 2005-05-27 2009-05-21 Nissan Chemical Industries, Ltd. Polishing Composition for Silicon Wafer
JP2007088379A (ja) * 2005-09-26 2007-04-05 Fujifilm Corp 水系研磨液、及び、化学機械的研磨方法
TWI506621B (zh) * 2005-12-22 2015-11-01 Kao Corp 硬碟基板用研磨液組合物
JP2007179612A (ja) * 2005-12-27 2007-07-12 Kao Corp 磁気ディスク基板用研磨液組成物
DE102006008689B4 (de) * 2006-02-24 2012-01-26 Lanxess Deutschland Gmbh Poliermittel und dessen Verwendung
US20070249167A1 (en) * 2006-04-21 2007-10-25 Cabot Microelectronics Corporation CMP method for copper-containing substrates

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6332831B1 (en) 2000-04-06 2001-12-25 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
JP2004204152A (ja) 2002-12-26 2004-07-22 Kao Corp 研磨液組成物
US20050136807A1 (en) 2003-08-08 2005-06-23 Kao Corporation Polishing composition for magnetic disk

Also Published As

Publication number Publication date
JP2011527643A (ja) 2011-11-04
EP2311074A2 (en) 2011-04-20
WO2010005543A2 (en) 2010-01-14
CN102089865A (zh) 2011-06-08
KR20110046465A (ko) 2011-05-04
WO2010005543A3 (en) 2010-04-29
CN102089865B (zh) 2014-09-10
US20100009537A1 (en) 2010-01-14
TWI397578B (zh) 2013-06-01
US8247326B2 (en) 2012-08-21
TW201012907A (en) 2010-04-01
JP5508413B2 (ja) 2014-05-28
MY149715A (en) 2013-10-14
EP2311074A4 (en) 2011-08-24
EP2311074B1 (en) 2014-03-19

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