MY149715A - Method of polishing nickel-phosphorous - Google Patents

Method of polishing nickel-phosphorous

Info

Publication number
MY149715A
MY149715A MYPI2011000031A MYPI20110031A MY149715A MY 149715 A MY149715 A MY 149715A MY PI2011000031 A MYPI2011000031 A MY PI2011000031A MY PI20110031 A MYPI20110031 A MY PI20110031A MY 149715 A MY149715 A MY 149715A
Authority
MY
Malaysia
Prior art keywords
phosphorous
nickel
substrate
polishing
polishing nickel
Prior art date
Application number
MYPI2011000031A
Other languages
English (en)
Inventor
Balasubramaniam Venkataramanan
Yeung Ping-Ha
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of MY149715A publication Critical patent/MY149715A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
MYPI2011000031A 2008-07-10 2009-07-06 Method of polishing nickel-phosphorous MY149715A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/170,954 US8247326B2 (en) 2008-07-10 2008-07-10 Method of polishing nickel-phosphorous

Publications (1)

Publication Number Publication Date
MY149715A true MY149715A (en) 2013-10-14

Family

ID=41505533

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2011000031A MY149715A (en) 2008-07-10 2009-07-06 Method of polishing nickel-phosphorous

Country Status (8)

Country Link
US (1) US8247326B2 (enExample)
EP (1) EP2311074B1 (enExample)
JP (1) JP5508413B2 (enExample)
KR (1) KR101259703B1 (enExample)
CN (1) CN102089865B (enExample)
MY (1) MY149715A (enExample)
TW (1) TWI397578B (enExample)
WO (1) WO2010005543A2 (enExample)

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US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
WO2014061417A1 (ja) * 2012-10-16 2014-04-24 日立化成株式会社 Ｃｍｐ用研磨液、貯蔵液及び研磨方法
WO2015057433A1 (en) 2013-10-18 2015-04-23 Cabot Microelectronics Corporation Polishing composition and method for nickel-phosphorous coated memory disks
US10358579B2 (en) * 2013-12-03 2019-07-23 Cabot Microelectronics Corporation CMP compositions and methods for polishing nickel phosphorous surfaces
US9909032B2 (en) * 2014-01-15 2018-03-06 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks
JP6511039B2 (ja) 2014-03-28 2019-05-08 山口精研工業株式会社 研磨剤組成物、および磁気ディスク基板の研磨方法
MY186419A (en) * 2014-03-28 2021-07-22 Yamaguchi Seiken Kogyo Co Ltd Polishing composition and method for polishing magnetic disk substrate
TWI563073B (en) * 2014-06-03 2016-12-21 Cabot Microelectronics Corp Cmp compositions and methods for polishing rigid disk surfaces
JP6775511B2 (ja) 2015-09-25 2020-10-28 山口精研工業株式会社 研磨剤組成物、および磁気ディスク基板の研磨方法
JP6775453B2 (ja) 2017-03-23 2020-10-28 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物
JP2019016417A (ja) 2017-07-04 2019-01-31 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物
JP7034667B2 (ja) 2017-10-24 2022-03-14 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物
US20190153262A1 (en) * 2017-11-20 2019-05-23 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced surface scratching
US10698846B2 (en) * 2018-11-07 2020-06-30 Realtek Semiconductor Corporation DDR SDRAM physical layer interface circuit and DDR SDRAM control device

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JP4090589B2 (ja) 1998-09-01 2008-05-28 株式会社フジミインコーポレーテッド 研磨用組成物
WO2000024842A1 (en) 1998-10-23 2000-05-04 Arch Specialty Chemicals, Inc. A chemical mechanical polishing slurry system having an activator solution
JP4021133B2 (ja) * 1999-07-22 2007-12-12 花王株式会社 研磨液組成物
US6258140B1 (en) * 1999-09-27 2001-07-10 Fujimi America Inc. Polishing composition
US6332831B1 (en) 2000-04-06 2001-12-25 Fujimi America Inc. Polishing composition and method for producing a memory hard disk
US6468913B1 (en) 2000-07-08 2002-10-22 Arch Specialty Chemicals, Inc. Ready-to-use stable chemical-mechanical polishing slurries
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KR100672940B1 (ko) * 2004-08-03 2007-01-24 삼성전자주식회사 금속막을 위한 화학적기계적 연마 슬러리 및 이를 이용한금속막의 화학적기계적 연마 방법
US7563383B2 (en) * 2004-10-12 2009-07-21 Cabot Mircroelectronics Corporation CMP composition with a polymer additive for polishing noble metals
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
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US20090127501A1 (en) * 2005-05-27 2009-05-21 Nissan Chemical Industries, Ltd. Polishing Composition for Silicon Wafer
JP2007088379A (ja) * 2005-09-26 2007-04-05 Fujifilm Corp 水系研磨液、及び、化学機械的研磨方法
TWI506621B (zh) * 2005-12-22 2015-11-01 Kao Corp 硬碟基板用研磨液組合物
JP2007179612A (ja) * 2005-12-27 2007-07-12 Kao Corp 磁気ディスク基板用研磨液組成物
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US20070249167A1 (en) * 2006-04-21 2007-10-25 Cabot Microelectronics Corporation CMP method for copper-containing substrates

Also Published As

Publication number Publication date
JP2011527643A (ja) 2011-11-04
EP2311074A2 (en) 2011-04-20
KR101259703B1 (ko) 2013-05-06
WO2010005543A2 (en) 2010-01-14
CN102089865A (zh) 2011-06-08
KR20110046465A (ko) 2011-05-04
WO2010005543A3 (en) 2010-04-29
CN102089865B (zh) 2014-09-10
US20100009537A1 (en) 2010-01-14
TWI397578B (zh) 2013-06-01
US8247326B2 (en) 2012-08-21
TW201012907A (en) 2010-04-01
JP5508413B2 (ja) 2014-05-28
EP2311074A4 (en) 2011-08-24
EP2311074B1 (en) 2014-03-19

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