CN102089865B - 抛光镍-磷的方法 - Google Patents

抛光镍-磷的方法 Download PDF

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Publication number
CN102089865B
CN102089865B CN200980126743.0A CN200980126743A CN102089865B CN 102089865 B CN102089865 B CN 102089865B CN 200980126743 A CN200980126743 A CN 200980126743A CN 102089865 B CN102089865 B CN 102089865B
Authority
CN
China
Prior art keywords
weight
polishing composition
nickel
acid
polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN200980126743.0A
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English (en)
Chinese (zh)
Other versions
CN102089865A (zh
Inventor
文卡塔拉马南.巴拉苏布拉马尼亚姆
杨平熹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Cabot Corp
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of CN102089865A publication Critical patent/CN102089865A/zh
Application granted granted Critical
Publication of CN102089865B publication Critical patent/CN102089865B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • ing And Chemical Polishing (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
CN200980126743.0A 2008-07-10 2009-07-06 抛光镍-磷的方法 Expired - Fee Related CN102089865B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/170,954 2008-07-10
US12/170,954 US8247326B2 (en) 2008-07-10 2008-07-10 Method of polishing nickel-phosphorous
PCT/US2009/003955 WO2010005543A2 (en) 2008-07-10 2009-07-06 Method of polishing nickel-phosphorous

Publications (2)

Publication Number Publication Date
CN102089865A CN102089865A (zh) 2011-06-08
CN102089865B true CN102089865B (zh) 2014-09-10

Family

ID=41505533

Family Applications (1)

Application Number Title Priority Date Filing Date
CN200980126743.0A Expired - Fee Related CN102089865B (zh) 2008-07-10 2009-07-06 抛光镍-磷的方法

Country Status (8)

Country Link
US (1) US8247326B2 (enExample)
EP (1) EP2311074B1 (enExample)
JP (1) JP5508413B2 (enExample)
KR (1) KR101259703B1 (enExample)
CN (1) CN102089865B (enExample)
MY (1) MY149715A (enExample)
TW (1) TWI397578B (enExample)
WO (1) WO2010005543A2 (enExample)

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US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
WO2014061417A1 (ja) * 2012-10-16 2014-04-24 日立化成株式会社 Ｃｍｐ用研磨液、貯蔵液及び研磨方法
WO2015057433A1 (en) 2013-10-18 2015-04-23 Cabot Microelectronics Corporation Polishing composition and method for nickel-phosphorous coated memory disks
US10358579B2 (en) * 2013-12-03 2019-07-23 Cabot Microelectronics Corporation CMP compositions and methods for polishing nickel phosphorous surfaces
US9909032B2 (en) * 2014-01-15 2018-03-06 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks
JP6511039B2 (ja) 2014-03-28 2019-05-08 山口精研工業株式会社 研磨剤組成物、および磁気ディスク基板の研磨方法
MY186419A (en) * 2014-03-28 2021-07-22 Yamaguchi Seiken Kogyo Co Ltd Polishing composition and method for polishing magnetic disk substrate
TWI563073B (en) * 2014-06-03 2016-12-21 Cabot Microelectronics Corp Cmp compositions and methods for polishing rigid disk surfaces
JP6775511B2 (ja) 2015-09-25 2020-10-28 山口精研工業株式会社 研磨剤組成物、および磁気ディスク基板の研磨方法
JP6775453B2 (ja) 2017-03-23 2020-10-28 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物
JP2019016417A (ja) 2017-07-04 2019-01-31 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物
JP7034667B2 (ja) 2017-10-24 2022-03-14 山口精研工業株式会社 磁気ディスク基板用研磨剤組成物
US20190153262A1 (en) * 2017-11-20 2019-05-23 Cabot Microelectronics Corporation Composition and method for polishing memory hard disks exhibiting reduced surface scratching
US10698846B2 (en) * 2018-11-07 2020-06-30 Realtek Semiconductor Corporation DDR SDRAM physical layer interface circuit and DDR SDRAM control device

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CN1532245A (zh) * 2003-02-28 2004-09-29 福吉米株式会社 抛光组合物
CN1579706A (zh) * 2003-08-08 2005-02-16 花王株式会社 磁盘用基板
CN1733856A (zh) * 2004-08-03 2006-02-15 三星电子株式会社 浆料、使用该浆料的化学机械抛光方法以及使用该浆料形成金属布线的方法
CN1939995A (zh) * 2005-09-26 2007-04-04 富士胶片株式会社 水性抛光液和化学机械抛光方法
CN101173160A (zh) * 2002-08-07 2008-05-07 花王株式会社 研磨液组合物

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JP4231632B2 (ja) 2001-04-27 2009-03-04 花王株式会社 研磨液組成物
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US20090127501A1 (en) * 2005-05-27 2009-05-21 Nissan Chemical Industries, Ltd. Polishing Composition for Silicon Wafer
TWI506621B (zh) * 2005-12-22 2015-11-01 Kao Corp 硬碟基板用研磨液組合物
JP2007179612A (ja) * 2005-12-27 2007-07-12 Kao Corp 磁気ディスク基板用研磨液組成物
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CN101173160A (zh) * 2002-08-07 2008-05-07 花王株式会社 研磨液组合物
CN1532245A (zh) * 2003-02-28 2004-09-29 福吉米株式会社 抛光组合物
CN1579706A (zh) * 2003-08-08 2005-02-16 花王株式会社 磁盘用基板
CN1733856A (zh) * 2004-08-03 2006-02-15 三星电子株式会社 浆料、使用该浆料的化学机械抛光方法以及使用该浆料形成金属布线的方法
CN1939995A (zh) * 2005-09-26 2007-04-04 富士胶片株式会社 水性抛光液和化学机械抛光方法

Also Published As

Publication number Publication date
JP2011527643A (ja) 2011-11-04
EP2311074A2 (en) 2011-04-20
KR101259703B1 (ko) 2013-05-06
WO2010005543A2 (en) 2010-01-14
CN102089865A (zh) 2011-06-08
KR20110046465A (ko) 2011-05-04
WO2010005543A3 (en) 2010-04-29
US20100009537A1 (en) 2010-01-14
TWI397578B (zh) 2013-06-01
US8247326B2 (en) 2012-08-21
TW201012907A (en) 2010-04-01
JP5508413B2 (ja) 2014-05-28
MY149715A (en) 2013-10-14
EP2311074A4 (en) 2011-08-24
EP2311074B1 (en) 2014-03-19

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20140910

Termination date: 20170706

CF01 Termination of patent right due to non-payment of annual fee