TWI397578B - 拋光鎳-磷的方法 - Google Patents
拋光鎳-磷的方法 Download PDFInfo
- Publication number
- TWI397578B TWI397578B TW098123246A TW98123246A TWI397578B TW I397578 B TWI397578 B TW I397578B TW 098123246 A TW098123246 A TW 098123246A TW 98123246 A TW98123246 A TW 98123246A TW I397578 B TWI397578 B TW I397578B
- Authority
- TW
- Taiwan
- Prior art keywords
- weight
- polishing composition
- acid
- polishing
- nickel
- Prior art date
Links
- 238000007517 polishing process Methods 0.000 title description 4
- 239000000203 mixture Substances 0.000 claims description 114
- 238000005498 polishing Methods 0.000 claims description 112
- 238000000034 method Methods 0.000 claims description 60
- 239000002245 particle Substances 0.000 claims description 50
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical group [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 48
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 44
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 44
- 239000002253 acid Substances 0.000 claims description 35
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 34
- CIEZZGWIJBXOTE-UHFFFAOYSA-N 2-[bis(carboxymethyl)amino]propanoic acid Chemical compound OC(=O)C(C)N(CC(O)=O)CC(O)=O CIEZZGWIJBXOTE-UHFFFAOYSA-N 0.000 claims description 19
- 150000001412 amines Chemical class 0.000 claims description 17
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 150000003839 salts Chemical class 0.000 claims description 7
- URDCARMUOSMFFI-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(2-hydroxyethyl)amino]acetic acid Chemical compound OCCN(CC(O)=O)CCN(CC(O)=O)CC(O)=O URDCARMUOSMFFI-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 24
- 230000003746 surface roughness Effects 0.000 description 22
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 21
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 21
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 16
- 239000004471 Glycine Substances 0.000 description 12
- 239000003139 biocide Substances 0.000 description 11
- 230000003115 biocidal effect Effects 0.000 description 10
- 239000003795 chemical substances by application Substances 0.000 description 10
- -1 alkoxy decane Chemical compound 0.000 description 9
- 239000003153 chemical reaction reagent Substances 0.000 description 7
- 239000007800 oxidant agent Substances 0.000 description 7
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 239000012141 concentrate Substances 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 239000003002 pH adjusting agent Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- PDIZYYQQWUOPPK-UHFFFAOYSA-N acetic acid;2-(methylamino)acetic acid Chemical compound CC(O)=O.CC(O)=O.CNCC(O)=O PDIZYYQQWUOPPK-UHFFFAOYSA-N 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 description 2
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 2
- WDJHALXBUFZDSR-UHFFFAOYSA-N acetoacetic acid Chemical compound CC(=O)CC(O)=O WDJHALXBUFZDSR-UHFFFAOYSA-N 0.000 description 2
- 235000004279 alanine Nutrition 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 238000000149 argon plasma sintering Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000006172 buffering agent Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 125000000524 functional group Chemical group 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 description 2
- 229910001453 nickel ion Inorganic materials 0.000 description 2
- 239000006179 pH buffering agent Substances 0.000 description 2
- 150000002978 peroxides Chemical class 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000006116 polymerization reaction Methods 0.000 description 2
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 150000003512 tertiary amines Chemical group 0.000 description 2
- CIHOLLKRGTVIJN-UHFFFAOYSA-N tert‐butyl hydroperoxide Chemical compound CC(C)(C)OO CIHOLLKRGTVIJN-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- UWRBFYBQPCJRRL-UHFFFAOYSA-N 3-[bis(carboxymethyl)amino]propanoic acid Chemical compound OC(=O)CCN(CC(O)=O)CC(O)=O UWRBFYBQPCJRRL-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- QPCDCPDFJACHGM-UHFFFAOYSA-N N,N-bis{2-[bis(carboxymethyl)amino]ethyl}glycine Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(=O)O)CCN(CC(O)=O)CC(O)=O QPCDCPDFJACHGM-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 1
- MMNQNDOIORJBNQ-UHFFFAOYSA-N [Ni].[P]=O Chemical compound [Ni].[P]=O MMNQNDOIORJBNQ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- JTPLPDIKCDKODU-UHFFFAOYSA-N acetic acid;2-(2-aminoethylamino)ethanol Chemical compound CC(O)=O.CC(O)=O.CC(O)=O.NCCNCCO JTPLPDIKCDKODU-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 235000001014 amino acid Nutrition 0.000 description 1
- 150000001413 amino acids Chemical class 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical group 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- OUDSFQBUEBFSPS-UHFFFAOYSA-N ethylenediaminetriacetic acid Chemical compound OC(=O)CNCCN(CC(O)=O)CC(O)=O OUDSFQBUEBFSPS-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- XMHIUKTWLZUKEX-UHFFFAOYSA-N hexacosanoic acid Chemical compound CCCCCCCCCCCCCCCCCCCCCCCCCC(O)=O XMHIUKTWLZUKEX-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- MGIYRDNGCNKGJU-UHFFFAOYSA-N isothiazolinone Chemical compound O=C1C=CSN1 MGIYRDNGCNKGJU-UHFFFAOYSA-N 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- DIOQZVSQGTUSAI-UHFFFAOYSA-N n-butylhexane Natural products CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000006174 pH buffer Substances 0.000 description 1
- 230000020477 pH reduction Effects 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 229920002620 polyvinyl fluoride Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- PFUVRDFDKPNGAV-UHFFFAOYSA-N sodium peroxide Chemical compound [Na+].[Na+].[O-][O-] PFUVRDFDKPNGAV-UHFFFAOYSA-N 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 150000005621 tetraalkylammonium salts Chemical class 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
- G11B5/8404—Processes or apparatus specially adapted for manufacturing record carriers manufacturing base layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- ing And Chemical Polishing (AREA)
- Manufacturing Of Magnetic Record Carriers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/170,954 US8247326B2 (en) | 2008-07-10 | 2008-07-10 | Method of polishing nickel-phosphorous |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201012907A TW201012907A (en) | 2010-04-01 |
| TWI397578B true TWI397578B (zh) | 2013-06-01 |
Family
ID=41505533
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098123246A TWI397578B (zh) | 2008-07-10 | 2009-07-09 | 拋光鎳-磷的方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8247326B2 (enExample) |
| EP (1) | EP2311074B1 (enExample) |
| JP (1) | JP5508413B2 (enExample) |
| KR (1) | KR101259703B1 (enExample) |
| CN (1) | CN102089865B (enExample) |
| MY (1) | MY149715A (enExample) |
| TW (1) | TWI397578B (enExample) |
| WO (1) | WO2010005543A2 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
| WO2014061417A1 (ja) * | 2012-10-16 | 2014-04-24 | 日立化成株式会社 | Ｃｍｐ用研磨液、貯蔵液及び研磨方法 |
| WO2015057433A1 (en) | 2013-10-18 | 2015-04-23 | Cabot Microelectronics Corporation | Polishing composition and method for nickel-phosphorous coated memory disks |
| US10358579B2 (en) * | 2013-12-03 | 2019-07-23 | Cabot Microelectronics Corporation | CMP compositions and methods for polishing nickel phosphorous surfaces |
| US9909032B2 (en) * | 2014-01-15 | 2018-03-06 | Cabot Microelectronics Corporation | Composition and method for polishing memory hard disks |
| JP6511039B2 (ja) | 2014-03-28 | 2019-05-08 | 山口精研工業株式会社 | 研磨剤組成物、および磁気ディスク基板の研磨方法 |
| MY186419A (en) * | 2014-03-28 | 2021-07-22 | Yamaguchi Seiken Kogyo Co Ltd | Polishing composition and method for polishing magnetic disk substrate |
| TWI563073B (en) * | 2014-06-03 | 2016-12-21 | Cabot Microelectronics Corp | Cmp compositions and methods for polishing rigid disk surfaces |
| JP6775511B2 (ja) | 2015-09-25 | 2020-10-28 | 山口精研工業株式会社 | 研磨剤組成物、および磁気ディスク基板の研磨方法 |
| JP6775453B2 (ja) | 2017-03-23 | 2020-10-28 | 山口精研工業株式会社 | 磁気ディスク基板用研磨剤組成物 |
| JP2019016417A (ja) | 2017-07-04 | 2019-01-31 | 山口精研工業株式会社 | 磁気ディスク基板用研磨剤組成物 |
| JP7034667B2 (ja) | 2017-10-24 | 2022-03-14 | 山口精研工業株式会社 | 磁気ディスク基板用研磨剤組成物 |
| US20190153262A1 (en) * | 2017-11-20 | 2019-05-23 | Cabot Microelectronics Corporation | Composition and method for polishing memory hard disks exhibiting reduced surface scratching |
| US10698846B2 (en) * | 2018-11-07 | 2020-06-30 | Realtek Semiconductor Corporation | DDR SDRAM physical layer interface circuit and DDR SDRAM control device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1550526A (zh) * | 2003-05-20 | 2004-12-01 | CMP��ķ��˹���Ӳ��Ͽعɹ�˾ | 用于镍质硬盘平坦化的多氧化剂基浆料 |
Family Cites Families (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4090589B2 (ja) | 1998-09-01 | 2008-05-28 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| WO2000024842A1 (en) | 1998-10-23 | 2000-05-04 | Arch Specialty Chemicals, Inc. | A chemical mechanical polishing slurry system having an activator solution |
| JP4021133B2 (ja) * | 1999-07-22 | 2007-12-12 | 花王株式会社 | 研磨液組成物 |
| US6258140B1 (en) * | 1999-09-27 | 2001-07-10 | Fujimi America Inc. | Polishing composition |
| US6332831B1 (en) | 2000-04-06 | 2001-12-25 | Fujimi America Inc. | Polishing composition and method for producing a memory hard disk |
| US6468913B1 (en) | 2000-07-08 | 2002-10-22 | Arch Specialty Chemicals, Inc. | Ready-to-use stable chemical-mechanical polishing slurries |
| JP4231632B2 (ja) | 2001-04-27 | 2009-03-04 | 花王株式会社 | 研磨液組成物 |
| US20030104770A1 (en) | 2001-04-30 | 2003-06-05 | Arch Specialty Chemicals, Inc. | Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers |
| US20040159050A1 (en) | 2001-04-30 | 2004-08-19 | Arch Specialty Chemicals, Inc. | Chemical mechanical polishing slurry composition for polishing conductive and non-conductive layers on semiconductor wafers |
| JP3875156B2 (ja) * | 2002-08-07 | 2007-01-31 | 花王株式会社 | ロールオフ低減剤 |
| US7300601B2 (en) | 2002-12-10 | 2007-11-27 | Advanced Technology Materials, Inc. | Passivative chemical mechanical polishing composition for copper film planarization |
| US7147682B2 (en) | 2002-12-26 | 2006-12-12 | Kao Corporation | Polishing composition |
| JP3997153B2 (ja) | 2002-12-26 | 2007-10-24 | 花王株式会社 | 研磨液組成物 |
| TWI254741B (en) | 2003-02-05 | 2006-05-11 | Kao Corp | Polishing composition |
| JP4202157B2 (ja) * | 2003-02-28 | 2008-12-24 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
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- 2009-07-06 KR KR1020117003011A patent/KR101259703B1/ko not_active Expired - Fee Related
- 2009-07-06 EP EP09794806.1A patent/EP2311074B1/en not_active Not-in-force
- 2009-07-06 MY MYPI2011000031A patent/MY149715A/en unknown
- 2009-07-06 CN CN200980126743.0A patent/CN102089865B/zh not_active Expired - Fee Related
- 2009-07-06 JP JP2011517411A patent/JP5508413B2/ja not_active Expired - Fee Related
- 2009-07-09 TW TW098123246A patent/TWI397578B/zh active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1550526A (zh) * | 2003-05-20 | 2004-12-01 | CMP��ķ��˹���Ӳ��Ͽعɹ�˾ | 用于镍质硬盘平坦化的多氧化剂基浆料 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2011527643A (ja) | 2011-11-04 |
| EP2311074A2 (en) | 2011-04-20 |
| KR101259703B1 (ko) | 2013-05-06 |
| WO2010005543A2 (en) | 2010-01-14 |
| CN102089865A (zh) | 2011-06-08 |
| KR20110046465A (ko) | 2011-05-04 |
| WO2010005543A3 (en) | 2010-04-29 |
| CN102089865B (zh) | 2014-09-10 |
| US20100009537A1 (en) | 2010-01-14 |
| US8247326B2 (en) | 2012-08-21 |
| TW201012907A (en) | 2010-04-01 |
| JP5508413B2 (ja) | 2014-05-28 |
| MY149715A (en) | 2013-10-14 |
| EP2311074A4 (en) | 2011-08-24 |
| EP2311074B1 (en) | 2014-03-19 |
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