KR101251671B1 - 반도체 장치 및 그 제조 방법과 하우징 지지 구조체 및 그제조 방법 - Google Patents

반도체 장치 및 그 제조 방법과 하우징 지지 구조체 및 그제조 방법 Download PDF

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KR101251671B1
KR101251671B1 KR20070009872A KR20070009872A KR101251671B1 KR 101251671 B1 KR101251671 B1 KR 101251671B1 KR 20070009872 A KR20070009872 A KR 20070009872A KR 20070009872 A KR20070009872 A KR 20070009872A KR 101251671 B1 KR101251671 B1 KR 101251671B1
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South Korea
Prior art keywords
housing
lead
pair
lead frame
light emitting
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Expired - Fee Related
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KR20070009872A
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English (en)
Korean (ko)
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KR20070079311A (ko
Inventor
사이끼 야마모또
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니치아 카가쿠 고교 가부시키가이샤
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/973—Substrate orientation

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  • Led Device Packages (AREA)
KR20070009872A 2006-02-01 2007-01-31 반도체 장치 및 그 제조 방법과 하우징 지지 구조체 및 그제조 방법 Expired - Fee Related KR101251671B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006024707A JP4857791B2 (ja) 2006-02-01 2006-02-01 半導体装置の製造方法
JPJP-P-2006-00024707 2006-02-01

Publications (2)

Publication Number Publication Date
KR20070079311A KR20070079311A (ko) 2007-08-06
KR101251671B1 true KR101251671B1 (ko) 2013-04-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR20070009872A Expired - Fee Related KR101251671B1 (ko) 2006-02-01 2007-01-31 반도체 장치 및 그 제조 방법과 하우징 지지 구조체 및 그제조 방법

Country Status (3)

Country Link
US (2) US7859004B2 (https=)
JP (1) JP4857791B2 (https=)
KR (1) KR101251671B1 (https=)

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JP4857791B2 (ja) * 2006-02-01 2012-01-18 日亜化学工業株式会社 半導体装置の製造方法
USD562783S1 (en) * 2006-11-03 2008-02-26 Lighthouse Technology Co., Ltd. Light emitting diode (LED)
JP2008198716A (ja) * 2007-02-09 2008-08-28 Eudyna Devices Inc 光半導体装置
US7993038B2 (en) * 2007-03-06 2011-08-09 Toyoda Gosei Co., Ltd. Light-emitting device
KR101326888B1 (ko) * 2007-06-20 2013-11-11 엘지이노텍 주식회사 반도체 발광소자 패키지
TW200917522A (en) * 2007-10-05 2009-04-16 Bright View Electronics Co Ltd Foot stand structure of LED
JP5426091B2 (ja) * 2007-12-27 2014-02-26 豊田合成株式会社 発光装置
JP4683053B2 (ja) 2008-01-28 2011-05-11 日亜化学工業株式会社 射出成形用金型及びこれによって成形される半導体パッケージ並びに半導体パッケージの製造方法
WO2009098967A1 (ja) * 2008-02-08 2009-08-13 Nichia Corporation 発光装置
USD595676S1 (en) * 2008-08-01 2009-07-07 Kingbright Electronic Co., Ltd. Light-emitting diode
USD592161S1 (en) * 2008-08-01 2009-05-12 Kingbright Electronic Co. Ltd. Light-emitting diode
KR101851818B1 (ko) * 2010-11-11 2018-06-04 니치아 카가쿠 고교 가부시키가이샤 발광 장치와 회로 기판의 제조 방법
USD645423S1 (en) * 2011-01-22 2011-09-20 Advanced Optoelectronic Technology, Inc. Housing for light emitting diode
USD645422S1 (en) * 2011-01-22 2011-09-20 Advanced Optoelectronic Technology, Inc. Housing for light emitting diode
USD645830S1 (en) * 2011-01-22 2011-09-27 Advanced Optoelectronic Technology, Inc. Housing for light emitting diode
JP6236999B2 (ja) * 2013-08-29 2017-11-29 日亜化学工業株式会社 発光装置
JP6447438B2 (ja) * 2015-09-28 2019-01-09 日亜化学工業株式会社 発光装置の製造方法
US10424699B2 (en) * 2016-02-26 2019-09-24 Nichia Corporation Light emitting device
JP6640672B2 (ja) * 2016-07-27 2020-02-05 ファナック株式会社 レーザ装置
US9997503B2 (en) 2016-08-03 2018-06-12 Nichia Corporation Composite substrate and light emitting device
JP6465160B2 (ja) * 2016-08-03 2019-02-06 日亜化学工業株式会社 複合基板および発光装置
JP6354809B2 (ja) * 2016-08-16 2018-07-11 日亜化学工業株式会社 発光装置の製造方法及び複合基板
JP6583297B2 (ja) * 2017-01-20 2019-10-02 日亜化学工業株式会社 発光装置用複合基板および発光装置の製造方法
JP7057512B2 (ja) * 2019-08-30 2022-04-20 日亜化学工業株式会社 発光装置
JP7752009B2 (ja) * 2021-09-24 2025-10-09 スタンレー電気株式会社 発光装置及び発光装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3144040B2 (ja) 1992-04-20 2001-03-07 ソニー株式会社 半導体装置の製造方法及びその装置並びにリードフレーム
JP2003281912A (ja) 2002-01-18 2003-10-03 Matsushita Electric Ind Co Ltd バックライト用光源
JP2004363537A (ja) * 2002-09-05 2004-12-24 Nichia Chem Ind Ltd 半導体装置およびその製造方法、並びにその半導体装置を用いた光学装置
JP2005217284A (ja) * 2004-01-30 2005-08-11 Hitachi Cable Ltd 光送受信モジュール

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JP3842444B2 (ja) * 1998-07-24 2006-11-08 富士通株式会社 半導体装置の製造方法
JP3773855B2 (ja) * 2001-11-12 2006-05-10 三洋電機株式会社 リードフレーム
USD497349S1 (en) * 2001-11-21 2004-10-19 Nichia Corporation Light emitting diode
TWI292961B (en) * 2002-09-05 2008-01-21 Nichia Corp Semiconductor device and an optical device using the semiconductor device
WO2004097480A1 (ja) * 2003-04-30 2004-11-11 Fujikura Ltd. 光コネクタアッセンブリ、コネクタホルダ、光コネクタ
WO2005008791A2 (en) * 2003-07-16 2005-01-27 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same
JP4789433B2 (ja) * 2004-06-30 2011-10-12 三洋電機株式会社 Ｌｅｄ表示器用筺体及びｌｅｄ表示器
JP4857791B2 (ja) * 2006-02-01 2012-01-18 日亜化学工業株式会社 半導体装置の製造方法
US20080089072A1 (en) * 2006-10-11 2008-04-17 Alti-Electronics Co., Ltd. High Power Light Emitting Diode Package
US7572149B2 (en) * 2007-02-16 2009-08-11 Yazaki Corporation Connector
KR100986202B1 (ko) * 2008-07-01 2010-10-07 알티전자 주식회사 사이드 뷰 발광 다이오드 패키지
US8134838B2 (en) * 2008-07-21 2012-03-13 Infineon Technologies Ag Semiconductor module and method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3144040B2 (ja) 1992-04-20 2001-03-07 ソニー株式会社 半導体装置の製造方法及びその装置並びにリードフレーム
JP2003281912A (ja) 2002-01-18 2003-10-03 Matsushita Electric Ind Co Ltd バックライト用光源
JP2004363537A (ja) * 2002-09-05 2004-12-24 Nichia Chem Ind Ltd 半導体装置およびその製造方法、並びにその半導体装置を用いた光学装置
JP2005217284A (ja) * 2004-01-30 2005-08-11 Hitachi Cable Ltd 光送受信モジュール

Also Published As

Publication number Publication date
US7859004B2 (en) 2010-12-28
US20070187709A1 (en) 2007-08-16
US20110070673A1 (en) 2011-03-24
JP2007207986A (ja) 2007-08-16
US8198108B2 (en) 2012-06-12
JP4857791B2 (ja) 2012-01-18
KR20070079311A (ko) 2007-08-06

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