JP4857791B2 - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法 Download PDF

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Publication number
JP4857791B2
JP4857791B2 JP2006024707A JP2006024707A JP4857791B2 JP 4857791 B2 JP4857791 B2 JP 4857791B2 JP 2006024707 A JP2006024707 A JP 2006024707A JP 2006024707 A JP2006024707 A JP 2006024707A JP 4857791 B2 JP4857791 B2 JP 4857791B2
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JP
Japan
Prior art keywords
housing
lead
lead frame
light emitting
recess
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006024707A
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English (en)
Japanese (ja)
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JP2007207986A5 (https=
JP2007207986A (ja
Inventor
才気 山本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Priority to JP2006024707A priority Critical patent/JP4857791B2/ja
Priority to US11/700,201 priority patent/US7859004B2/en
Priority to KR20070009872A priority patent/KR101251671B1/ko
Publication of JP2007207986A publication Critical patent/JP2007207986A/ja
Publication of JP2007207986A5 publication Critical patent/JP2007207986A5/ja
Priority to US12/905,353 priority patent/US8198108B2/en
Application granted granted Critical
Publication of JP4857791B2 publication Critical patent/JP4857791B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/973—Substrate orientation

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  • Led Device Packages (AREA)
JP2006024707A 2006-02-01 2006-02-01 半導体装置の製造方法 Expired - Fee Related JP4857791B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006024707A JP4857791B2 (ja) 2006-02-01 2006-02-01 半導体装置の製造方法
US11/700,201 US7859004B2 (en) 2006-02-01 2007-01-31 Semiconductor device
KR20070009872A KR101251671B1 (ko) 2006-02-01 2007-01-31 반도체 장치 및 그 제조 방법과 하우징 지지 구조체 및 그제조 방법
US12/905,353 US8198108B2 (en) 2006-02-01 2010-10-15 Semiconductor device and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006024707A JP4857791B2 (ja) 2006-02-01 2006-02-01 半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2007207986A JP2007207986A (ja) 2007-08-16
JP2007207986A5 JP2007207986A5 (https=) 2008-12-04
JP4857791B2 true JP4857791B2 (ja) 2012-01-18

Family

ID=38367471

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006024707A Expired - Fee Related JP4857791B2 (ja) 2006-02-01 2006-02-01 半導体装置の製造方法

Country Status (3)

Country Link
US (2) US7859004B2 (https=)
JP (1) JP4857791B2 (https=)
KR (1) KR101251671B1 (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4857791B2 (ja) * 2006-02-01 2012-01-18 日亜化学工業株式会社 半導体装置の製造方法
USD562783S1 (en) * 2006-11-03 2008-02-26 Lighthouse Technology Co., Ltd. Light emitting diode (LED)
JP2008198716A (ja) * 2007-02-09 2008-08-28 Eudyna Devices Inc 光半導体装置
US7993038B2 (en) * 2007-03-06 2011-08-09 Toyoda Gosei Co., Ltd. Light-emitting device
KR101326888B1 (ko) * 2007-06-20 2013-11-11 엘지이노텍 주식회사 반도체 발광소자 패키지
TW200917522A (en) * 2007-10-05 2009-04-16 Bright View Electronics Co Ltd Foot stand structure of LED
JP5426091B2 (ja) * 2007-12-27 2014-02-26 豊田合成株式会社 発光装置
JP4683053B2 (ja) 2008-01-28 2011-05-11 日亜化学工業株式会社 射出成形用金型及びこれによって成形される半導体パッケージ並びに半導体パッケージの製造方法
WO2009098967A1 (ja) * 2008-02-08 2009-08-13 Nichia Corporation 発光装置
USD595676S1 (en) * 2008-08-01 2009-07-07 Kingbright Electronic Co., Ltd. Light-emitting diode
USD592161S1 (en) * 2008-08-01 2009-05-12 Kingbright Electronic Co. Ltd. Light-emitting diode
KR101851818B1 (ko) * 2010-11-11 2018-06-04 니치아 카가쿠 고교 가부시키가이샤 발광 장치와 회로 기판의 제조 방법
USD645423S1 (en) * 2011-01-22 2011-09-20 Advanced Optoelectronic Technology, Inc. Housing for light emitting diode
USD645422S1 (en) * 2011-01-22 2011-09-20 Advanced Optoelectronic Technology, Inc. Housing for light emitting diode
USD645830S1 (en) * 2011-01-22 2011-09-27 Advanced Optoelectronic Technology, Inc. Housing for light emitting diode
JP6236999B2 (ja) * 2013-08-29 2017-11-29 日亜化学工業株式会社 発光装置
JP6447438B2 (ja) * 2015-09-28 2019-01-09 日亜化学工業株式会社 発光装置の製造方法
US10424699B2 (en) * 2016-02-26 2019-09-24 Nichia Corporation Light emitting device
JP6640672B2 (ja) * 2016-07-27 2020-02-05 ファナック株式会社 レーザ装置
US9997503B2 (en) 2016-08-03 2018-06-12 Nichia Corporation Composite substrate and light emitting device
JP6465160B2 (ja) * 2016-08-03 2019-02-06 日亜化学工業株式会社 複合基板および発光装置
JP6354809B2 (ja) * 2016-08-16 2018-07-11 日亜化学工業株式会社 発光装置の製造方法及び複合基板
JP6583297B2 (ja) * 2017-01-20 2019-10-02 日亜化学工業株式会社 発光装置用複合基板および発光装置の製造方法
JP7057512B2 (ja) * 2019-08-30 2022-04-20 日亜化学工業株式会社 発光装置
JP7752009B2 (ja) * 2021-09-24 2025-10-09 スタンレー電気株式会社 発光装置及び発光装置の製造方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3144040B2 (ja) 1992-04-20 2001-03-07 ソニー株式会社 半導体装置の製造方法及びその装置並びにリードフレーム
JP3842444B2 (ja) * 1998-07-24 2006-11-08 富士通株式会社 半導体装置の製造方法
JP3773855B2 (ja) * 2001-11-12 2006-05-10 三洋電機株式会社 リードフレーム
USD497349S1 (en) * 2001-11-21 2004-10-19 Nichia Corporation Light emitting diode
JP4206746B2 (ja) 2002-01-18 2009-01-14 パナソニック株式会社 バックライト用光源
JP3991961B2 (ja) * 2002-09-05 2007-10-17 日亜化学工業株式会社 側面発光型発光装置
TWI292961B (en) * 2002-09-05 2008-01-21 Nichia Corp Semiconductor device and an optical device using the semiconductor device
WO2004097480A1 (ja) * 2003-04-30 2004-11-11 Fujikura Ltd. 光コネクタアッセンブリ、コネクタホルダ、光コネクタ
WO2005008791A2 (en) * 2003-07-16 2005-01-27 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device, method of manufacturing the same, and lighting apparatus and display apparatus using the same
JP4534503B2 (ja) * 2004-01-30 2010-09-01 日立電線株式会社 光送受信モジュール
JP4789433B2 (ja) * 2004-06-30 2011-10-12 三洋電機株式会社 Ｌｅｄ表示器用筺体及びｌｅｄ表示器
JP4857791B2 (ja) * 2006-02-01 2012-01-18 日亜化学工業株式会社 半導体装置の製造方法
US20080089072A1 (en) * 2006-10-11 2008-04-17 Alti-Electronics Co., Ltd. High Power Light Emitting Diode Package
US7572149B2 (en) * 2007-02-16 2009-08-11 Yazaki Corporation Connector
KR100986202B1 (ko) * 2008-07-01 2010-10-07 알티전자 주식회사 사이드 뷰 발광 다이오드 패키지
US8134838B2 (en) * 2008-07-21 2012-03-13 Infineon Technologies Ag Semiconductor module and method

Also Published As

Publication number Publication date
KR101251671B1 (ko) 2013-04-05
US7859004B2 (en) 2010-12-28
US20070187709A1 (en) 2007-08-16
US20110070673A1 (en) 2011-03-24
JP2007207986A (ja) 2007-08-16
US8198108B2 (en) 2012-06-12
KR20070079311A (ko) 2007-08-06

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