KR101198543B1 - 플라즈마 처리 장치 - Google Patents

플라즈마 처리 장치 Download PDF

Info

Publication number
KR101198543B1
KR101198543B1 KR1020077021575A KR20077021575A KR101198543B1 KR 101198543 B1 KR101198543 B1 KR 101198543B1 KR 1020077021575 A KR1020077021575 A KR 1020077021575A KR 20077021575 A KR20077021575 A KR 20077021575A KR 101198543 B1 KR101198543 B1 KR 101198543B1
Authority
KR
South Korea
Prior art keywords
porous plate
plasma processing
plasma
electrode unit
outer edge
Prior art date
Application number
KR1020077021575A
Other languages
English (en)
Korean (ko)
Other versions
KR20080005360A (ko
Inventor
기요시 아리타
아키라 나카가와
Original Assignee
파나소닉 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 파나소닉 주식회사 filed Critical 파나소닉 주식회사
Publication of KR20080005360A publication Critical patent/KR20080005360A/ko
Application granted granted Critical
Publication of KR101198543B1 publication Critical patent/KR101198543B1/ko

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020077021575A 2005-04-05 2006-04-04 플라즈마 처리 장치 KR101198543B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00108385 2005-04-05
JP2005108385A JP4654738B2 (ja) 2005-04-05 2005-04-05 プラズマ処理装置
PCT/JP2006/307522 WO2006107114A1 (en) 2005-04-05 2006-04-04 Plasma processing apparatus

Publications (2)

Publication Number Publication Date
KR20080005360A KR20080005360A (ko) 2008-01-11
KR101198543B1 true KR101198543B1 (ko) 2012-11-06

Family

ID=36646036

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077021575A KR101198543B1 (ko) 2005-04-05 2006-04-04 플라즈마 처리 장치

Country Status (7)

Country Link
US (1) US20090266488A1 (zh)
EP (1) EP1869692A1 (zh)
JP (1) JP4654738B2 (zh)
KR (1) KR101198543B1 (zh)
CN (1) CN101151703B (zh)
TW (1) TW200701346A (zh)
WO (1) WO2006107114A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4746620B2 (ja) * 2005-04-05 2011-08-10 パナソニック株式会社 プラズマ処理装置用のガスシャワープレート
KR101380861B1 (ko) * 2007-11-09 2014-04-03 참엔지니어링(주) 플라즈마 에칭 챔버
JP4590597B2 (ja) 2008-03-12 2010-12-01 国立大学法人東北大学 シャワープレートの製造方法
WO2011139598A2 (en) * 2010-04-27 2011-11-10 Cummins Filtration Ip, Inc. High water content fuel detection system
JP5809396B2 (ja) * 2010-06-24 2015-11-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US9129778B2 (en) 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
US11637002B2 (en) * 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
KR101776430B1 (ko) * 2015-12-14 2017-09-07 현대자동차주식회사 차세대 연료펌프 일체형 디젤 연료필터
SG11202100703SA (en) * 2018-07-30 2021-02-25 Nordson Corp Systems for workpiece processing with plasma

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002231638A (ja) 2001-01-31 2002-08-16 Kyocera Corp シャワーヘッド及びその製造方法
JP2003007682A (ja) 2001-06-25 2003-01-10 Matsushita Electric Ind Co Ltd プラズマ処理装置用の電極部材
US20040206305A1 (en) 2003-04-16 2004-10-21 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4595452A (en) * 1985-03-11 1986-06-17 Oerlikon-Buhrle U.S.A. Inc. Method and apparatus for plasma etching
JPH01103828A (ja) * 1987-10-16 1989-04-20 Fuji Electric Corp Res & Dev Ltd プラズマｃｖｄ装置
JPH02101740A (ja) * 1988-10-11 1990-04-13 Anelva Corp プラズマエッチング装置
JPH06206015A (ja) * 1993-01-07 1994-07-26 Nippon Seisen Co Ltd 流体分散エレメント
WO1996031997A1 (fr) * 1995-04-07 1996-10-10 Seiko Epson Corporation Equipement de traitement de surface
JP3220619B2 (ja) * 1995-05-24 2001-10-22 松下電器産業株式会社 ガス伝熱プラズマ処理装置
US6159297A (en) * 1996-04-25 2000-12-12 Applied Materials, Inc. Semiconductor process chamber and processing method
US6051286A (en) * 1997-02-12 2000-04-18 Applied Materials, Inc. High temperature, high deposition rate process and apparatus for depositing titanium layers
US6364957B1 (en) * 1997-10-09 2002-04-02 Applied Materials, Inc. Support assembly with thermal expansion compensation
JP3637827B2 (ja) * 2000-01-26 2005-04-13 松下電器産業株式会社 プラズマ処理装置
US6444040B1 (en) * 2000-05-05 2002-09-03 Applied Materials Inc. Gas distribution plate
JP4540250B2 (ja) * 2001-04-25 2010-09-08 信越化学工業株式会社 プラズマ装置用電極板
JP2003073839A (ja) * 2001-08-27 2003-03-12 Mitsubishi Heavy Ind Ltd 膜評価用基板ホルダ及び膜評価方法
JP2003282462A (ja) * 2002-03-27 2003-10-03 Kyocera Corp シャワープレートとその製造方法及びそれを用いたシャワーヘッド
JP2004059990A (ja) * 2002-07-29 2004-02-26 Matsushita Electric Ind Co Ltd 成膜装置
JP4746620B2 (ja) * 2005-04-05 2011-08-10 パナソニック株式会社 プラズマ処理装置用のガスシャワープレート

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002231638A (ja) 2001-01-31 2002-08-16 Kyocera Corp シャワーヘッド及びその製造方法
JP2003007682A (ja) 2001-06-25 2003-01-10 Matsushita Electric Ind Co Ltd プラズマ処理装置用の電極部材
US20040206305A1 (en) 2003-04-16 2004-10-21 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition

Also Published As

Publication number Publication date
US20090266488A1 (en) 2009-10-29
WO2006107114A1 (en) 2006-10-12
TW200701346A (en) 2007-01-01
KR20080005360A (ko) 2008-01-11
CN101151703A (zh) 2008-03-26
EP1869692A1 (en) 2007-12-26
JP2006287152A (ja) 2006-10-19
JP4654738B2 (ja) 2011-03-23
CN101151703B (zh) 2010-11-10

Similar Documents

Publication Publication Date Title
KR101198428B1 (ko) 플라즈마 처리 장치용 가스 샤워 플레이트
KR101198543B1 (ko) 플라즈마 처리 장치
JP2008306042A (ja) プラズマ処理装置
KR20220104227A (ko) 활성 가스 생성 장치
KR20120131182A (ko) 플라즈마 처리 장치
KR100754362B1 (ko) 웨이퍼 에칭용 전극
KR100852577B1 (ko) 플라즈마 처리 장치, 플라즈마 처리 방법 및 기억 매체
KR100774497B1 (ko) 기판을 처리하는 장치 및 방법
KR102652093B1 (ko) 포커스 링 유닛 및 기판처리장치
JP6982701B2 (ja) 静電チャック、真空処理装置及び基板処理方法
KR100686284B1 (ko) 상부 전극 유닛 및 이를 이용한 플라즈마 처리 장치
KR100754363B1 (ko) 웨이퍼 에칭용 전극
JP7194941B2 (ja) プラズマ処理装置
KR100772612B1 (ko) 기판을 처리하는 장치 및 방법
KR100734776B1 (ko) 플라즈마 처리장치
KR100754364B1 (ko) 웨이퍼 에칭용 전극
KR20210075377A (ko) 기판지지대 및 이를 포함하는 기판처리장치
KR100335766B1 (ko) 웨이퍼 로딩용 플랜지 애노드
JP2023127762A (ja) プラズマ処理装置
KR20040054290A (ko) 망사형 라이너를 구비한 폴리머 흡착용 돔
JP2019160565A (ja) プラズマ処理装置
KR20040022093A (ko) 파티클 발생을 억제하는 건식 식각 장비의 가스 분배플레이트
JP2001230235A (ja) 水晶板のプラズマエッチング装置および水晶板の製造方法並びに水晶板
KR19980076965A (ko) 반도체 소자 식각 장치용 쳄버의 절연체 고정 구조
JPS63126224A (ja) 処理装置

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
LAPS Lapse due to unpaid annual fee