TW200701346A - Plasma processing apparatus - Google Patents

Plasma processing apparatus

Info

Publication number
TW200701346A
TW200701346A TW095111954A TW95111954A TW200701346A TW 200701346 A TW200701346 A TW 200701346A TW 095111954 A TW095111954 A TW 095111954A TW 95111954 A TW95111954 A TW 95111954A TW 200701346 A TW200701346 A TW 200701346A
Authority
TW
Taiwan
Prior art keywords
plasma processing
plasma
electrode
porous plate
gas
Prior art date
Application number
TW095111954A
Other languages
English (en)
Inventor
Kiyoshi Arita
Akira Nakagawa
Original Assignee
Matsushita Electric Ind Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd filed Critical Matsushita Electric Ind Co Ltd
Publication of TW200701346A publication Critical patent/TW200701346A/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
TW095111954A 2005-04-05 2006-04-04 Plasma processing apparatus TW200701346A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005108385A JP4654738B2 (ja) 2005-04-05 2005-04-05 プラズマ処理装置

Publications (1)

Publication Number Publication Date
TW200701346A true TW200701346A (en) 2007-01-01

Family

ID=36646036

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095111954A TW200701346A (en) 2005-04-05 2006-04-04 Plasma processing apparatus

Country Status (7)

Country Link
US (1) US20090266488A1 (zh)
EP (1) EP1869692A1 (zh)
JP (1) JP4654738B2 (zh)
KR (1) KR101198543B1 (zh)
CN (1) CN101151703B (zh)
TW (1) TW200701346A (zh)
WO (1) WO2006107114A1 (zh)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4746620B2 (ja) * 2005-04-05 2011-08-10 パナソニック株式会社 プラズマ処理装置用のガスシャワープレート
KR101380861B1 (ko) * 2007-11-09 2014-04-03 참엔지니어링(주) 플라즈마 에칭 챔버
JP4590597B2 (ja) 2008-03-12 2010-12-01 国立大学法人東北大学 シャワープレートの製造方法
WO2011139598A2 (en) * 2010-04-27 2011-11-10 Cummins Filtration Ip, Inc. High water content fuel detection system
JP5809396B2 (ja) * 2010-06-24 2015-11-10 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US9129778B2 (en) 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
US11637002B2 (en) * 2014-11-26 2023-04-25 Applied Materials, Inc. Methods and systems to enhance process uniformity
KR101776430B1 (ko) * 2015-12-14 2017-09-07 현대자동차주식회사 차세대 연료펌프 일체형 디젤 연료필터
SG11202100703SA (en) * 2018-07-30 2021-02-25 Nordson Corp Systems for workpiece processing with plasma

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4595452A (en) * 1985-03-11 1986-06-17 Oerlikon-Buhrle U.S.A. Inc. Method and apparatus for plasma etching
JPH01103828A (ja) * 1987-10-16 1989-04-20 Fuji Electric Corp Res & Dev Ltd プラズマｃｖｄ装置
JPH02101740A (ja) * 1988-10-11 1990-04-13 Anelva Corp プラズマエッチング装置
JPH06206015A (ja) * 1993-01-07 1994-07-26 Nippon Seisen Co Ltd 流体分散エレメント
WO1996031997A1 (fr) * 1995-04-07 1996-10-10 Seiko Epson Corporation Equipement de traitement de surface
JP3220619B2 (ja) * 1995-05-24 2001-10-22 松下電器産業株式会社 ガス伝熱プラズマ処理装置
US6159297A (en) * 1996-04-25 2000-12-12 Applied Materials, Inc. Semiconductor process chamber and processing method
US6051286A (en) * 1997-02-12 2000-04-18 Applied Materials, Inc. High temperature, high deposition rate process and apparatus for depositing titanium layers
US6364957B1 (en) * 1997-10-09 2002-04-02 Applied Materials, Inc. Support assembly with thermal expansion compensation
JP3637827B2 (ja) * 2000-01-26 2005-04-13 松下電器産業株式会社 プラズマ処理装置
US6444040B1 (en) * 2000-05-05 2002-09-03 Applied Materials Inc. Gas distribution plate
JP2002231638A (ja) * 2001-01-31 2002-08-16 Kyocera Corp シャワーヘッド及びその製造方法
JP4540250B2 (ja) * 2001-04-25 2010-09-08 信越化学工業株式会社 プラズマ装置用電極板
JP2003007682A (ja) * 2001-06-25 2003-01-10 Matsushita Electric Ind Co Ltd プラズマ処理装置用の電極部材
JP2003073839A (ja) * 2001-08-27 2003-03-12 Mitsubishi Heavy Ind Ltd 膜評価用基板ホルダ及び膜評価方法
JP2003282462A (ja) * 2002-03-27 2003-10-03 Kyocera Corp シャワープレートとその製造方法及びそれを用いたシャワーヘッド
JP2004059990A (ja) * 2002-07-29 2004-02-26 Matsushita Electric Ind Co Ltd 成膜装置
US6942753B2 (en) 2003-04-16 2005-09-13 Applied Materials, Inc. Gas distribution plate assembly for large area plasma enhanced chemical vapor deposition
JP4746620B2 (ja) * 2005-04-05 2011-08-10 パナソニック株式会社 プラズマ処理装置用のガスシャワープレート

Also Published As

Publication number Publication date
KR101198543B1 (ko) 2012-11-06
US20090266488A1 (en) 2009-10-29
WO2006107114A1 (en) 2006-10-12
KR20080005360A (ko) 2008-01-11
CN101151703A (zh) 2008-03-26
EP1869692A1 (en) 2007-12-26
JP2006287152A (ja) 2006-10-19
JP4654738B2 (ja) 2011-03-23
CN101151703B (zh) 2010-11-10

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