KR101166830B1 - 액티브 매트릭스 액정표시장치 - Google Patents

액티브 매트릭스 액정표시장치 Download PDF

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Publication number
KR101166830B1
KR101166830B1 KR1020050078211A KR20050078211A KR101166830B1 KR 101166830 B1 KR101166830 B1 KR 101166830B1 KR 1020050078211 A KR1020050078211 A KR 1020050078211A KR 20050078211 A KR20050078211 A KR 20050078211A KR 101166830 B1 KR101166830 B1 KR 101166830B1
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KR
South Korea
Prior art keywords
gate
liquid crystal
tft element
electrode
substrate
Prior art date
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KR1020050078211A
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English (en)
Korean (ko)
Other versions
KR20070003497A (ko
Inventor
카즈요시 나가야마
Original Assignee
엘지디스플레이 주식회사
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Application filed by 엘지디스플레이 주식회사 filed Critical 엘지디스플레이 주식회사
Publication of KR20070003497A publication Critical patent/KR20070003497A/ko
Application granted granted Critical
Publication of KR101166830B1 publication Critical patent/KR101166830B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G2320/00—Control of display operating conditions
    • G09G2320/02—Improving the quality of display appearance
    • G09G2320/0247—Flicker reduction other than flicker reduction circuits used for single beam cathode-ray tubes

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Liquid Crystal (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal Display Device Control (AREA)
KR1020050078211A 2005-06-30 2005-08-25 액티브 매트릭스 액정표시장치 KR101166830B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2005-00192589 2005-06-30
JP2005192589A JP4856399B2 (ja) 2005-06-30 2005-06-30 液晶表示装置のｔｆｔ素子電極形状

Publications (2)

Publication Number Publication Date
KR20070003497A KR20070003497A (ko) 2007-01-05
KR101166830B1 true KR101166830B1 (ko) 2012-07-19

Family

ID=37749647

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020050078211A KR101166830B1 (ko) 2005-06-30 2005-08-25 액티브 매트릭스 액정표시장치

Country Status (2)

Country Link
JP (1) JP4856399B2 (ja)
KR (1) KR101166830B1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150134264A (ko) * 2014-05-21 2015-12-01 이노럭스 코포레이션 디스플레이 장치
US9679927B2 (en) 2014-02-17 2017-06-13 Samsung Display Co., Ltd. Liquid crystal display with pixel transistors having different channel widths

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090054572A (ko) 2007-11-27 2009-06-01 삼성전자주식회사 표시 장치
CN101750826B (zh) * 2009-12-28 2011-09-14 深超光电（深圳）有限公司 像素结构
KR102097024B1 (ko) 2013-01-04 2020-04-06 삼성디스플레이 주식회사 박막 트랜지스터 표시판

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05232512A (ja) * 1992-02-25 1993-09-10 Sanyo Electric Co Ltd 液晶表示装置
JP2001075127A (ja) * 1999-09-03 2001-03-23 Matsushita Electric Ind Co Ltd アクティブマトッリクス型液晶表示素子及びその製造方法
JP2002072250A (ja) * 2000-04-24 2002-03-12 Matsushita Electric Ind Co Ltd 表示装置およびその駆動方法
KR20020042898A (ko) * 2000-12-01 2002-06-08 구본준, 론 위라하디락사 액정표시장치용 어레이기판과 그 제조방법
TWI287132B (en) * 2001-11-23 2007-09-21 Chi Mei Optoelectronics Corp A liquid crystal display having reduced flicker

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9679927B2 (en) 2014-02-17 2017-06-13 Samsung Display Co., Ltd. Liquid crystal display with pixel transistors having different channel widths
US9991296B2 (en) 2014-02-17 2018-06-05 Samsung Display Co., Ltd. Liquid crystal display with pixel transistors having different channel widths
KR20150134264A (ko) * 2014-05-21 2015-12-01 이노럭스 코포레이션 디스플레이 장치
KR101689462B1 (ko) 2014-05-21 2016-12-23 이노럭스 코포레이션 디스플레이 장치

Also Published As

Publication number Publication date
JP4856399B2 (ja) 2012-01-18
KR20070003497A (ko) 2007-01-05
JP2007011056A (ja) 2007-01-18

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