JP2007011056A - 液晶表示装置のtft素子電極形状 - Google Patents
液晶表示装置のtft素子電極形状 Download PDFInfo
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- JP2007011056A JP2007011056A JP2005192589A JP2005192589A JP2007011056A JP 2007011056 A JP2007011056 A JP 2007011056A JP 2005192589 A JP2005192589 A JP 2005192589A JP 2005192589 A JP2005192589 A JP 2005192589A JP 2007011056 A JP2007011056 A JP 2007011056A
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- Prior art keywords
- gate
- tft element
- liquid crystal
- electrode
- display device
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 24
- 230000003071 parasitic effect Effects 0.000 claims abstract description 19
- 239000011159 matrix material Substances 0.000 claims abstract description 15
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 description 5
- 239000003990 capacitor Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 230000035515 penetration Effects 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0247—Flicker reduction other than flicker reduction circuits used for single beam cathode-ray tubes
Abstract
【解決手段】ゲートライバの位置から遠くに配置されたTFT素子のゲート・ソース寄生容量Cgsが近くに配置されたTFT素子のそれよりも大きくするが、TFT素子各々のチャネル幅WとチャネルギャップLが一定となるようドレイン電極とソース電極の形状・寸法を形成している。
【選択図】図6
Description
Vgh:ゲート電圧のオンレベル
Vgl:ゲート電圧のオフレベル
Cgs:ゲート・ソース間の寄生容量
Clc:画素容量
Cs:蓄積容量
10a・・ゲート線突出部
20・・・データ線
30・・・アモルファス半導体パッチ
40・・・ドレイン電極
50・・・ソース電極
60・・・画素電極
60a・・蓄積容量部
Claims (3)
- 第1と第2の基板間に配置された液晶、
該第1の基板上でマトリックス状に配置された、表示領域を画成しているゲート線とデータ線、
該第1の基板上で、該ゲート線とデータ線の交点各々に規定された画素領域内に形成された画素電極、
該第1又は第2の基板上で、画素電極との間に液晶駆動電圧を印加するよう形成された共通電極、
該表示領域の外側に設けられ、該ゲート線各々を順次走査するよう、該ゲート線に信号を印加するゲートドライバ、
該表示領域の外側に設けられ、該データ線各々にデータ信号を印加するデータドライバ、及び
画素領域各々に設けられたTFT素子であって、該ゲート線上のゲート信号によってオンになったとき、該データ線上のデータ信号を該画素電極に印加するTFT素子とからなるアクティブマトリックス液晶表示装置において、
該TFT素子は、ゲートライン上に配置されたアモルファス半導体パッチ、該パッチ上に配置されたドレイン電極とソース電極とからなり、
該ゲートドライバの位置から遠くに配置されたTFT素子のゲート−ソース寄生容量Cgs″が、近くに配置されたTFT素子のゲート−ソース寄生容量Cgs′より大きくなるが、該TFT素子のチャネル幅WとチャネルギャップLは該ゲートドライバの位置からの距離に関わらず一定であるようドレイン電極とソース電極の形状・寸法が形成されているアクティブマトリックス液晶表示装置。 - 請求項1に記載の装置において、該ゲートドライバの位置からの距離に関わらず、該TFT素子各々の該ゲート線に与える負荷容量が一定であるアクティブマトリックス液晶表示装置。
- 請求項1又は2に記載の装置において、該TFT素子各々のドレイン電極の形状は凹型であり、該ソース電極が該ドレイン電極の凹型形状のへこみ部に入り込むよう形成されているアクティブマトリックス液晶表示装置。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005192589A JP4856399B2 (ja) | 2005-06-30 | 2005-06-30 | 液晶表示装置のtft素子電極形状 |
KR1020050078211A KR101166830B1 (ko) | 2005-06-30 | 2005-08-25 | 액티브 매트릭스 액정표시장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005192589A JP4856399B2 (ja) | 2005-06-30 | 2005-06-30 | 液晶表示装置のtft素子電極形状 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007011056A true JP2007011056A (ja) | 2007-01-18 |
JP4856399B2 JP4856399B2 (ja) | 2012-01-18 |
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Application Number | Title | Priority Date | Filing Date |
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JP2005192589A Expired - Fee Related JP4856399B2 (ja) | 2005-06-30 | 2005-06-30 | 液晶表示装置のtft素子電極形状 |
Country Status (2)
Country | Link |
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JP (1) | JP4856399B2 (ja) |
KR (1) | KR101166830B1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011079533A1 (zh) * | 2009-12-28 | 2011-07-07 | 深超光电(深圳)有限公司 | 像素结构 |
US8045079B2 (en) | 2007-11-27 | 2011-10-25 | Samsung Electronics Co., Ltd. | Display device |
US9515091B2 (en) | 2013-01-04 | 2016-12-06 | Samsung Display Co., Ltd. | Thin film transistor array panel including angled drain regions |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102128969B1 (ko) | 2014-02-17 | 2020-07-02 | 삼성디스플레이 주식회사 | 액정 표시 장치 및 그 제조 방법 |
TWI545381B (zh) * | 2014-05-21 | 2016-08-11 | 群創光電股份有限公司 | 顯示裝置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05232512A (ja) * | 1992-02-25 | 1993-09-10 | Sanyo Electric Co Ltd | 液晶表示装置 |
JP2001075127A (ja) * | 1999-09-03 | 2001-03-23 | Matsushita Electric Ind Co Ltd | アクティブマトッリクス型液晶表示素子及びその製造方法 |
JP2002072250A (ja) * | 2000-04-24 | 2002-03-12 | Matsushita Electric Ind Co Ltd | 表示装置およびその駆動方法 |
JP2002229068A (ja) * | 2000-12-01 | 2002-08-14 | Lg Philips Lcd Co Ltd | 液晶表示装置用アレイ基板とその製造方法 |
JP2003186050A (ja) * | 2001-11-23 | 2003-07-03 | Chi Mei Electronics Corp | 低ちらつき液晶パネル |
-
2005
- 2005-06-30 JP JP2005192589A patent/JP4856399B2/ja not_active Expired - Fee Related
- 2005-08-25 KR KR1020050078211A patent/KR101166830B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05232512A (ja) * | 1992-02-25 | 1993-09-10 | Sanyo Electric Co Ltd | 液晶表示装置 |
JP2001075127A (ja) * | 1999-09-03 | 2001-03-23 | Matsushita Electric Ind Co Ltd | アクティブマトッリクス型液晶表示素子及びその製造方法 |
JP2002072250A (ja) * | 2000-04-24 | 2002-03-12 | Matsushita Electric Ind Co Ltd | 表示装置およびその駆動方法 |
JP2002229068A (ja) * | 2000-12-01 | 2002-08-14 | Lg Philips Lcd Co Ltd | 液晶表示装置用アレイ基板とその製造方法 |
JP2003186050A (ja) * | 2001-11-23 | 2003-07-03 | Chi Mei Electronics Corp | 低ちらつき液晶パネル |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8045079B2 (en) | 2007-11-27 | 2011-10-25 | Samsung Electronics Co., Ltd. | Display device |
WO2011079533A1 (zh) * | 2009-12-28 | 2011-07-07 | 深超光电(深圳)有限公司 | 像素结构 |
US9515091B2 (en) | 2013-01-04 | 2016-12-06 | Samsung Display Co., Ltd. | Thin film transistor array panel including angled drain regions |
US9780177B2 (en) | 2013-01-04 | 2017-10-03 | Samsung Display Co., Ltd. | Thin film transistor array panel including angled drain regions |
Also Published As
Publication number | Publication date |
---|---|
JP4856399B2 (ja) | 2012-01-18 |
KR101166830B1 (ko) | 2012-07-19 |
KR20070003497A (ko) | 2007-01-05 |
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