KR101154762B1 - 티탄 또는 티탄 합금용 에칭액 - Google Patents
티탄 또는 티탄 합금용 에칭액 Download PDFInfo
- Publication number
- KR101154762B1 KR101154762B1 KR1020050038699A KR20050038699A KR101154762B1 KR 101154762 B1 KR101154762 B1 KR 101154762B1 KR 1020050038699 A KR1020050038699 A KR 1020050038699A KR 20050038699 A KR20050038699 A KR 20050038699A KR 101154762 B1 KR101154762 B1 KR 101154762B1
- Authority
- KR
- South Korea
- Prior art keywords
- titanium
- etching
- weight
- hydrogen peroxide
- acid
- Prior art date
Links
- 238000005530 etching Methods 0.000 title claims abstract description 60
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title claims abstract description 24
- 239000010936 titanium Substances 0.000 title claims abstract description 24
- 229910052719 titanium Inorganic materials 0.000 title claims abstract description 24
- 229910001069 Ti alloy Inorganic materials 0.000 title claims abstract description 22
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 61
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims abstract description 34
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 28
- 229910021529 ammonia Inorganic materials 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 17
- 239000007864 aqueous solution Substances 0.000 claims abstract description 16
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 14
- 229910001128 Sn alloy Inorganic materials 0.000 claims abstract description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052718 tin Inorganic materials 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052802 copper Inorganic materials 0.000 claims abstract description 10
- 239000010949 copper Substances 0.000 claims abstract description 10
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- ABLZXFCXXLZCGV-UHFFFAOYSA-N Phosphorous acid Chemical compound OP(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 claims abstract description 5
- 150000001875 compounds Chemical class 0.000 claims abstract description 5
- 239000007788 liquid Substances 0.000 claims description 14
- 239000000243 solution Substances 0.000 claims description 14
- 239000002253 acid Substances 0.000 claims description 10
- DUYCTCQXNHFCSJ-UHFFFAOYSA-N dtpmp Chemical compound OP(=O)(O)CN(CP(O)(O)=O)CCN(CP(O)(=O)O)CCN(CP(O)(O)=O)CP(O)(O)=O DUYCTCQXNHFCSJ-UHFFFAOYSA-N 0.000 claims description 5
- -1 phosphonic acid compound Chemical class 0.000 claims description 5
- GGHDAUPFEBTORZ-UHFFFAOYSA-N propane-1,1-diamine Chemical compound CCC(N)N GGHDAUPFEBTORZ-UHFFFAOYSA-N 0.000 claims description 4
- DBVJJBKOTRCVKF-UHFFFAOYSA-N Etidronic acid Chemical compound OP(=O)(O)C(O)(C)P(O)(O)=O DBVJJBKOTRCVKF-UHFFFAOYSA-N 0.000 claims description 3
- 150000002739 metals Chemical class 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 17
- 230000000694 effects Effects 0.000 description 6
- 238000000354 decomposition reaction Methods 0.000 description 5
- 150000003009 phosphonic acids Chemical class 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000004090 dissolution Methods 0.000 description 4
- 239000003381 stabilizer Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- KFDNQUWMBLVQNB-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]acetic acid;sodium Chemical compound [Na].[Na].[Na].[Na].OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KFDNQUWMBLVQNB-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910000403 monosodium phosphate Inorganic materials 0.000 description 2
- 235000019799 monosodium phosphate Nutrition 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- AJPJDKMHJJGVTQ-UHFFFAOYSA-M sodium dihydrogen phosphate Chemical compound [Na+].OP(O)([O-])=O AJPJDKMHJJGVTQ-UHFFFAOYSA-M 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 2
- VILCJCGEZXAXTO-UHFFFAOYSA-N 2,2,2-tetramine Chemical compound NCCNCCNCCN VILCJCGEZXAXTO-UHFFFAOYSA-N 0.000 description 1
- JCTXXFXWHMLHLS-UHFFFAOYSA-N 2-[2-[bis(carboxymethyl)amino]ethyl-(carboxymethyl)amino]acetic acid;hydrate Chemical compound O.OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O JCTXXFXWHMLHLS-UHFFFAOYSA-N 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- XWROUVVQGRRRMF-UHFFFAOYSA-N F.O[N+]([O-])=O Chemical compound F.O[N+]([O-])=O XWROUVVQGRRRMF-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 150000003863 ammonium salts Chemical class 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- MRNZSTMRDWRNNR-UHFFFAOYSA-N bis(hexamethylene)triamine Chemical compound NCCCCCCNCCCCCCN MRNZSTMRDWRNNR-UHFFFAOYSA-N 0.000 description 1
- NFDRPXJGHKJRLJ-UHFFFAOYSA-N edtmp Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CCN(CP(O)(O)=O)CP(O)(O)=O NFDRPXJGHKJRLJ-UHFFFAOYSA-N 0.000 description 1
- 235000010299 hexamethylene tetramine Nutrition 0.000 description 1
- 239000004312 hexamethylene tetramine Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- LMRFGCUCLQUNCZ-UHFFFAOYSA-N hydrogen peroxide hydrofluoride Chemical compound F.OO LMRFGCUCLQUNCZ-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/30—Acidic compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2004-00141438 | 2004-05-11 | ||
| JP2004141438A JP4471094B2 (ja) | 2004-05-11 | 2004-05-11 | チタンまたはチタン合金のエッチング液 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20060045996A KR20060045996A (ko) | 2006-05-17 |
| KR101154762B1 true KR101154762B1 (ko) | 2012-06-18 |
Family
ID=35468080
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020050038699A KR101154762B1 (ko) | 2004-05-11 | 2005-05-10 | 티탄 또는 티탄 합금용 에칭액 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4471094B2 (ja) |
| KR (1) | KR101154762B1 (ja) |
| CN (1) | CN100526507C (ja) |
| TW (1) | TWI360586B (ja) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200105221A (ko) | 2019-02-28 | 2020-09-07 | 동우 화인켐 주식회사 | 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법 |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008152830A1 (ja) | 2007-06-14 | 2008-12-18 | Sharp Kabushiki Kaisha | 表示パネルおよび表示装置ならびに表示パネルの製造方法 |
| CN101903988B (zh) | 2007-12-21 | 2013-07-31 | 和光纯药工业株式会社 | 蚀刻剂、蚀刻方法及蚀刻剂制备液 |
| JP5150401B2 (ja) * | 2008-08-04 | 2013-02-20 | 株式会社アルバック | 真空槽の構成部品の製造方法、該部品の再生方法、枠体の製造方法、及び枠体の再生方法 |
| KR20120067198A (ko) * | 2010-12-15 | 2012-06-25 | 제일모직주식회사 | 에칭 페이스트, 그 제조방법 및 이를 이용한 패턴 형성방법 |
| SG10201710610PA (en) | 2013-07-05 | 2018-02-27 | Wako Pure Chem Ind Ltd | Etching agent, etching method and etching agent preparation liquid |
| US20150368557A1 (en) | 2014-06-23 | 2015-12-24 | Hyosan Lee | Metal etchant compositions and methods of fabricating a semiconductor device using the same |
| JP6545691B2 (ja) * | 2014-09-19 | 2019-07-17 | 三菱電機株式会社 | 半導体装置の製造方法 |
| JP6429079B2 (ja) | 2015-02-12 | 2018-11-28 | メック株式会社 | エッチング液及びエッチング方法 |
| US10865484B2 (en) | 2016-03-29 | 2020-12-15 | Technic France | Solution and method for etching titanium based materials |
| JP7220142B2 (ja) | 2017-03-31 | 2023-02-09 | 関東化学株式会社 | チタン層またはチタン含有層のエッチング液組成物およびエッチング方法 |
| CN110581061B (zh) * | 2019-09-25 | 2022-03-01 | 同辉电子科技股份有限公司 | 一种氮化镓mmic功率放大器芯片的加工工艺 |
| CN114196956B (zh) * | 2020-09-18 | 2024-03-12 | 珠海市丹尼尔电子科技有限公司 | 一种用于钛的蚀刻液 |
| JP7500088B2 (ja) | 2022-04-11 | 2024-06-17 | 奥野製薬工業株式会社 | 金属剥離剤 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980070759A (ko) * | 1997-01-27 | 1998-10-26 | 미우라아끼라 | 표면처리 조성물 및 이를 이용한 기판의 표면처리 방법 |
| JP2003328159A (ja) | 2002-05-02 | 2003-11-19 | Mitsubishi Gas Chem Co Inc | 表面処理剤 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003031688A1 (fr) * | 2001-10-09 | 2003-04-17 | Nagase Chemtex Corporation | Composition de produit d'attaque |
| TWI245071B (en) * | 2002-04-24 | 2005-12-11 | Mitsubishi Chem Corp | Etchant and method of etching |
-
2004
- 2004-05-11 JP JP2004141438A patent/JP4471094B2/ja not_active Expired - Lifetime
-
2005
- 2005-05-06 TW TW094114625A patent/TWI360586B/zh active
- 2005-05-10 KR KR1020050038699A patent/KR101154762B1/ko active IP Right Grant
- 2005-05-11 CN CNB2005100688258A patent/CN100526507C/zh active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980070759A (ko) * | 1997-01-27 | 1998-10-26 | 미우라아끼라 | 표면처리 조성물 및 이를 이용한 기판의 표면처리 방법 |
| JP2003328159A (ja) | 2002-05-02 | 2003-11-19 | Mitsubishi Gas Chem Co Inc | 表面処理剤 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20200105221A (ko) | 2019-02-28 | 2020-09-07 | 동우 화인켐 주식회사 | 식각액 조성물 및 이를 이용한 식각 방법 및 금속 패턴의 형성 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100526507C (zh) | 2009-08-12 |
| KR20060045996A (ko) | 2006-05-17 |
| CN1706986A (zh) | 2005-12-14 |
| TWI360586B (en) | 2012-03-21 |
| JP4471094B2 (ja) | 2010-06-02 |
| TW200606280A (en) | 2006-02-16 |
| JP2005320608A (ja) | 2005-11-17 |
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