CN113939899A - 过氧化氢分解抑制剂 - Google Patents
过氧化氢分解抑制剂 Download PDFInfo
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- CN113939899A CN113939899A CN202080043042.7A CN202080043042A CN113939899A CN 113939899 A CN113939899 A CN 113939899A CN 202080043042 A CN202080043042 A CN 202080043042A CN 113939899 A CN113939899 A CN 113939899A
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- Prior art keywords
- decomposition
- acid
- titanium nitride
- decomposition inhibitor
- compounds
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- 238000000354 decomposition reaction Methods 0.000 title claims abstract description 109
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 239000003112 inhibitor Substances 0.000 title claims abstract description 69
- 239000000203 mixture Substances 0.000 claims abstract description 83
- 238000005530 etching Methods 0.000 claims abstract description 76
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 50
- 150000001875 compounds Chemical class 0.000 claims abstract description 32
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 25
- KXDHJXZQYSOELW-UHFFFAOYSA-N Carbamic acid Chemical class NC(O)=O KXDHJXZQYSOELW-UHFFFAOYSA-N 0.000 claims abstract description 21
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- 239000004480 active ingredient Substances 0.000 claims abstract description 8
- -1 azole compound Chemical class 0.000 claims description 24
- NSPMIYGKQJPBQR-UHFFFAOYSA-N 4H-1,2,4-triazole Chemical compound C=1N=CNN=1 NSPMIYGKQJPBQR-UHFFFAOYSA-N 0.000 claims description 15
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 claims description 15
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 4
- 239000012964 benzotriazole Substances 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
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- 238000006731 degradation reaction Methods 0.000 description 3
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- VKZRWSNIWNFCIQ-UHFFFAOYSA-N 2-[2-(1,2-dicarboxyethylamino)ethylamino]butanedioic acid Chemical compound OC(=O)CC(C(O)=O)NCCNC(C(O)=O)CC(O)=O VKZRWSNIWNFCIQ-UHFFFAOYSA-N 0.000 description 2
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- YDONNITUKPKTIG-UHFFFAOYSA-N [Nitrilotris(methylene)]trisphosphonic acid Chemical compound OP(O)(=O)CN(CP(O)(O)=O)CP(O)(O)=O YDONNITUKPKTIG-UHFFFAOYSA-N 0.000 description 2
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- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 2
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Abstract
本发明以提供抑制氮化钛用蚀刻液组合物中所含的过氧化氢的分解的分解抑制剂为课题。本发明涉及一种用于抑制氮化钛用蚀刻液组合物中所含的过氧化氢的分解的分解抑制剂,其中,包含选自唑类化合物、氨基羧酸类化合物和膦酸类化合物的至少1种化合物作为有效成分。
Description
技术领域
本发明涉及用于包含过氧化氢的蚀刻液组合物的过氧化氢的分解抑制剂。
背景技术
一直以来,对半导体基板进行蚀刻加工时,作为蚀刻液组合物,已知包含过氧化氢的蚀刻液组合物。另一方面,包含过氧化氢的蚀刻液组合物中,过氧化氢的分解因金属的溶解而被促进,产生蚀刻液组合物的寿命缩短等问题。
为了防止这样的过氧化氢的分解,探讨了向蚀刻液组合物中添加膦酸类螯合剂(专利文献1)。该文献中,将钛(Ti)类金属膜或钨(W)类金属膜作为蚀刻加工的对象。
此外,还已知以氮化钛(TiN)为蚀刻加工的对象的包含过氧化氢的蚀刻液组合物,例如,揭示有用于从包含PVD氮化钛和Cu等第二材料的半导体器件选择性除去PVD氮化钛的包含过氧化氢、碱、弱酸、铵盐、三唑、长链有机胺或聚烷基胺和溶剂的组合物(专利文献2),对于防止过氧化氢的分解没有任何探讨。其中,该文献中,三唑作为用于防止铜损耗的腐蚀防止剂添加。
现有技术文献
专利文献
专利文献1:日本专利特许第5343858号公报
专利文献2:日本专利特开2016-213461号公报
发明的概要
发明所要解决的技术问题
本发明人遇到了在使用包含过氧化氢的蚀刻液组合物的情况下,过氧化氢的分解促进程度因其蚀刻对象的原材料而差异较大的问题,具体来说,在使用包含过氧化氢的蚀刻液组合物,以被用作半导体元件加工时的硬掩模的氮化钛为蚀刻对象的情况下,与以钨或银等为蚀刻对象的情况相比,蚀刻液组合物中的过氧化氢的分解显著被促进。本发明人进而推测该问题是因为源自溶解于蚀刻液组合物的蚀刻对象的金属离子等成分的影响根据该成分种类的不同而差异较大。
于是,本发明人以提供用于抑制溶解有氮化钛的蚀刻液组合物中的过氧化氢的分解的分解抑制剂为课题进行了探讨。即,本发明的课题是提供用于抑制氮化钛用蚀刻液组合物中所含的过氧化氢的分解的分解抑制剂。
解决技术问题所采用的技术方案
为了解决上述课题而认真研究后,本发明人发现包含选自唑类化合物、氨基羧酸类化合物和膦酸类化合物的至少1种化合物作为有效成分的分解抑制剂抑制氮化钛用蚀刻液组合物中所含的过氧化氢的分解,分解抑制剂包含唑类化合物的情况下,不仅抑制过氧化氢的分解,还防止半导体元件上的铜(Cu)和钴(Co)的腐蚀,进一步进行研究后,最终完成了本发明。
即,本发明涉及以下内容。
[1]一种用于抑制氮化钛用蚀刻液组合物中所含的过氧化氢的分解的分解抑制剂,其中,包含选自唑类化合物、氨基羧酸类化合物和膦酸类化合物的至少1种化合物作为有效成分。
[2]根据上述[1]所述的分解抑制剂,其中,还包含水。
[3]根据上述[1]或[2]所述的分解抑制剂,其中,还包含水溶性有机溶剂。
[4]根据上述[1]~[3]中的任一项所述的分解抑制剂,其中,包含选自唑类化合物、氨基羧酸类化合物和膦酸类化合物的至少2种化合物。
[5]根据上述[1]~[4]中的任一项所述的分解抑制剂,其中,作为唑类化合物,包含选自1,2,4-三唑、1,2,3-三唑、咪唑和苯并咪唑的至少1种化合物。
[6]根据上述[1]~[4]中的任一项所述的分解抑制剂,其中,作为氨基羧酸类化合物,包含选自反式-1,2-二氨基环己烷-N,N,N',N'-四乙酸、乙二胺四乙酸、二亚乙基三胺五乙酸、乙二醇二乙醚二胺四乙酸和三亚乙基四胺六乙酸的至少1种化合物。
[7]根据上述[1]~[4]中的任一项所述的分解抑制剂,其中,作为膦酸类化合物,包含选自1-羟基乙烷-1,1-二膦酸和乙二胺四亚甲基膦酸的至少1种化合物。
[8]根据上述[1]~[7]中的任一项所述的分解抑制剂,其中,该分解抑制剂用于添加至蚀刻液组合物,使得相对于蚀刻液组合物中的100ppm氮化钛,选自唑类化合物、氨基羧酸类化合物和膦酸类化合物的至少1种化合物达到2mmol/L以上的比例。
[9]一种抑制氮化钛用蚀刻液组合物中所含的过氧化氢的分解的方法,其中,使用上述[1]~[8]中的任一项所述的分解抑制剂。
[10]一种氮化钛用蚀刻液组合物,其中,包含上述[1]~[8]中的任一项所述的分解抑制剂和过氧化氢。
[11]根据上述[10]所述的氮化钛用蚀刻液组合物,其中,相对于100ppm氮化钛,以2mmol/L以上的比例包含选自唑类化合物、氨基羧酸类化合物和膦酸类化合物的至少1种化合物。
[12]根据上述[10]或[11]所述的氮化钛用蚀刻液组合物,其中,还包含除唑类化合物、氨基羧酸类化合物和膦酸类化合物以外的螯合剂。
[13]根据上述[10]~[12]中的任一项所述的氮化钛用蚀刻液组合物,其中,pH为4.0~8.0。
发明的效果
本发明的分解抑制剂可抑制氮化钛用蚀刻液组合物中所含的过氧化氢的分解,延长蚀刻液组合物的溶液寿命。
此外,本发明的分解抑制剂包含唑类化合物的情况下,不仅抑制氮化钛用蚀刻液组合物中所含的过氧化氢的分解,还防止半导体元件上的铜和钴的腐蚀,可良好地加工半导体元件。
附图的简单说明
图1是表示被用作硬掩模的氮化钛的除去的图。
图2是表示评价1的结果的图。
图3是表示评价2中作为分解抑制剂使用1,2,4-三唑时的结果的图。
图4是表示评价2中作为分解抑制剂使用CyDTA时的结果的图。
图5是表示评价2中作为分解抑制剂使用HEDP时的结果的图。
图6是表示评价3的结果的图。
图7是表示评价4的结果的图。
图8是表示评价5的结果的图。
图9是表示评价6的Co的蚀刻速率的结果的图。
图10是表示评价6的Cu的蚀刻速率的结果的图。
实施发明的方式
以下,基于本发明的优选实施方式对本发明进行详细说明。
本发明涉及一种用于抑制氮化钛用蚀刻液组合物中所含的过氧化氢的分解的分解抑制剂,其中,包含选自唑类化合物、氨基羧酸类化合物和膦酸类化合物的至少1种化合物作为有效成分。
本发明的分解抑制剂所含的唑类化合物无特别限定,可例举1,2,4-三唑、1,2,3-三唑、咪唑、苯并咪唑、苯并三唑(BTA)、吡唑、四唑、噁唑、噻唑、异噻唑、5-氨基-1H-四唑(ATZ)、3-氨基-1H-1,2,4-三唑(ATA)、腺嘌呤、鸟嘌呤、5-苯基四唑和5-巯基-1-甲基四唑等,较好是1,2,4-三唑、1,2,3-三唑、咪唑和苯并咪唑,更好是1,2,4-三唑和1,2,3-三唑。
唑类化合物可单独使用,也可组合使用。此外,还可与其他作为有效成分的氨基羧酸类化合物和/或膦酸类化合物组合使用。
本发明的分解抑制剂中所用的氨基羧酸类化合物无特别限定,可例举反式-1,2-二氨基环己烷-N,N,N',N'-四乙酸(CyDTA)、乙二胺四乙酸(EDTA)、二亚乙基三胺五乙酸(DTPA)、乙二醇二乙醚二胺四乙酸(GEDTA)、三亚乙基四胺六乙酸(TTHA)、羟乙基亚胺二乙酸(HIDA)和乙二胺-N,N'-二琥珀酸(EDDS)等,较好是CyDTA、EDTA、DTPA、GEDTA和TTHA,更好是CyDTA。
氨基羧酸类化合物可单独使用,也可组合使用。此外,还可与其他作为有效成分的唑类化合物和/或膦酸类化合物组合使用。
本发明的分解抑制剂中所含的膦酸类化合物,只要是具有来源于膦酸的结构的化合物即可,可例举1-羟基乙烷-1,1-二膦酸(HEDP)、乙二胺四亚甲基膦酸(EDTMP)、次氮基三(亚甲基膦酸)(NTMP)、2-膦酸丁烷-1,2,4-三羧酸(PBTC)和甘氨酸-N,N-双(亚甲基膦酸)(草甘二膦)等,但并不仅限于此,较好是HEDP和EDTMP。
膦酸类化合物可单独使用,也可组合使用。此外,还可与其他作为有效成分的唑类化合物和/或氨基羧酸类化合物组合使用。
作为一种形态,本发明的分解抑制剂包含选自唑类化合物、氨基羧酸类化合物和膦酸类化合物的至少2种化合物。
本发明的分解抑制剂较好是以相对于蚀刻液组合物中的100ppm氮化钛,选自唑类化合物、氨基羧酸类化合物和膦酸类化合物的至少1种化合物达到2mmol/L以上的比例,添加至蚀刻液组合物中,更好是以相对于100ppm达到2~10mmol/L的比例添加,进一步更好是以达到4~10mmol/L的比例添加。
本发明的分解抑制剂可还包含水。
此外,如果本发明的分解抑制剂还包含水溶性有机溶剂,则可除去氮化钛的干法蚀刻时产生的有机残渣等,因此优选。
作为水溶性有机溶剂,无特别限定,可例举糠醇、四氢糠醇等具有醚基的醇类,亚甲基二醇类、乙二醇类、二乙二醇类、三乙二醇类、丙二醇类、二丙二醇、三丙二醇类等二醇醚类,羧酸酯类、碳酸酯类、内酯类、磷酸酯类、硫酸酯类等酯类,乙酰胺、N-甲基乙酰胺、异丁酰胺、丙酰胺、N-乙基乙酰胺、N,N-二甲基乙酰胺等酰胺类,N-甲基-2-吡咯烷酮、1,3-二甲基-2-咪唑烷酮等内酰胺类等。除此之外,可例举二甲亚砜、环丁砜等含硫化合物。
水溶性有机溶剂可单独使用,也可组合使用。
本发明的分解抑制剂可抑制氮化钛用蚀刻液组合物中所含的过氧化氢的分解的理由并不确定,但可认为选自唑类化合物、氨基羧酸类化合物和膦酸类化合物的至少1种化合物与溶解于蚀刻液组合物的钛一起形成螯合物,其溶于水或水溶性有机溶剂,从而防止钛与过氧化氢的接触,过氧化氢的分解得到抑制。
本发明的分解抑制剂可用于氮化钛用蚀刻液组合物中所含的过氧化氢分解的抑制。只要是包含氮化钛的蚀刻液组合物,即使该蚀刻液组合物中还包含器件结构上的钨、钴或铜等其他金属,本发明的分解抑制剂也可抑制蚀刻液组合物中的过氧化氢分解。
另一方面,本发明的分解抑制剂不适合作为金属仅包含氮化钛以外的金属的蚀刻液组合物中的过氧化氢分解的抑制,例如,蚀刻液组合物中作为金属仅包含器件结构上的钨、钴、银或铜等的情况下,对过氧化氢分解的抑制没有作用。
此外,本发明也涉及使用本发明的分解抑制剂抑制氮化钛用蚀刻液组合物中所含的过氧化氢的分解的方法。
另外,本发明还涉及包含本发明的分解抑制剂和过氧化氢的氮化钛用蚀刻液组合物。
本发明的氮化钛用蚀刻液组合物较好是相对于100ppm氮化钛,以2mmol/L以上的比例包含选自唑类化合物、氨基羧酸类化合物和膦酸类化合物的至少1种化合物,更好是以相对于100ppm氮化钛以2~10mmol/L的比例包含,进一步更好是以4~10mmol/L的比例包含。
本发明的氮化钛用蚀刻液组合物可还包含除唑类化合物、氨基羧酸类化合物和膦酸类化合物以外的螯合剂。
作为螯合剂,无特别限定,可例举有机酸,例如甘氨酸、苹果酸、柠檬酸、乙醇酸、酒石酸、乳酸等。
螯合剂可单独使用,也可组合使用。
本发明的氮化钛用蚀刻液组合物可还包含pH调整剂。
作为pH调整剂,使用氨、伯胺、仲胺、叔胺、季铵氢氧化物、无机酸、有机酸等。
pH调整剂可单独使用,也可组合使用。
本发明的氮化钛用蚀刻液组合物可还包含用于使pH稳定的缓冲剂。
作为缓冲剂,可例举铵盐,例如乙酸铵、乙二酸铵、柠檬酸铵、酒石酸铵、硫酸铵、磷酸三铵、磷酸氢二铵、磷酸二氢铵、氯化铵、氟化铵。较好是磷酸氢二铵。
缓冲剂可单独使用,也可组合使用。
只要不妨碍该蚀刻液组合物中的过氧化氢分解的抑制,本发明的氮化钛用蚀刻液组合物可包含除螯合剂、pH调整剂、pH缓冲剂以外的任意的追加成分,可例举例如铜防蚀剂、钴防蚀剂等。作为铜防蚀剂和钴防蚀剂,可例举1,2,4-三唑、1,2,3-三唑、咪唑、苯并咪唑、BTA、吡唑、四唑、噁唑、噻唑、异噻唑、ATZ、ATA、腺嘌呤、鸟嘌呤、5-苯基四唑、5-巯基-1-甲基四唑、六亚甲基四胺、3,4-二氢-3-羟基-4-氧代-1,2,4-三嗪、3H-1,2,3-三唑并[4,5-b]吡啶-3-醇、5-氨基-1H-四唑、3-羟基吡啶等含氮环化合物和无水咖啡因,更好是BTA。
本发明的氮化钛用蚀刻液组合物的pH无特别限定,从抑制该蚀刻液组合物中的过氧化氢的分解的观点来看,较好是4.0~8.0,更好是6.0~7.5。
从确保氮化钛的高蚀刻速率的观点来看,使用本发明的氮化钛用蚀刻液组合物蚀刻氮化钛时的所述组合物的温度较好是40~80℃,更好是50~60℃。
实施例
下面,对于本发明的蚀刻液组合物,通过以下记载的实施例及比较例进行更详细的说明,但本发明并不限定于这些实施例。
<评价1:H2O2分解抑制能力>
(H2O2(初始)的测定)
制备50mL表1所示的组成的pH6的H2O2水溶液。制备该水溶液时,作为pH调整剂,降低pH值的情况下使用磷酸,提高pH值的情况下使用氢氧化四乙基铵。然后,通过使用高锰酸钾的氧化还原滴定,对该水溶液的H2O2浓度(初始)进行了的测定。
(H2O2的分解)
一边搅拌一边向上述的H2O2水溶液中溶解TiN粉末至400ppm,在60℃放置6小时。由于水蒸发,适当加水,调整至H2O2水溶液维持在50mL。
(H2O2浓度(最终)的测定)
对于上述的放置后的H2O2水溶液,通过使用高锰酸钾的氧化还原滴定,对H2O2浓度(最终)进行了的测定。然后,算出H2O2(最终)/H2O2(初始)×100[%]。结果示于表1和图2。
[表1]
※NMO:N-甲基吗啉N-氧化物
BDG:二乙二醇丁醚
PVP:聚乙烯吡咯烷酮
作为分解抑制剂包含唑类化合物、氨基羧酸类化合物、膦酸类化合物的蚀刻液组合物与不含分解抑制剂的蚀刻液组合物和包含上述以外的分解抑制剂的蚀刻液组合物相比,均显示良好的H2O2分解抑制效果。
<评价2:H2O2分解抑制能力的浓度依赖性>
评价1中,对于作为确认了高H2O2分解抑制能力的H2O2分解抑制剂的1,2,4-三唑、CyDTA和HEDP,进行了使各分解抑制剂的浓度变化时的H2O2分解抑制能力进行了评价。除使用表2~4所示的组成的H2O2水溶液以外,通过与评价1相同的方法,进行H2O2浓度(初始)的测定、H2O2的分解和H2O2浓度(最终)的测定,算出H2O2(最终)/H2O2(初始)×100[%]。结果示于表2~4和图3~5。
[表2]
[表3]
[表4]
作为分解抑制剂使用唑类化合物、氨基羧酸类化合物、膦酸类化合物的蚀刻液组合物与该分解抑制剂的浓度无关,均显示了比不含分解抑制剂的情况更高的H2O2分解抑制效果。
<评价3:H2O2分解抑制能力的pH依赖性>
作为H2O2分解抑制剂包含1,2,4-三唑的H2O2水溶液中,进行了使pH变化时的H2O2分解抑制能力进行了评价。作为pH调整剂,降低pH值的情况下使用磷酸,提高pH值的情况下使用氢氧化四乙基铵。除使用表5所示的pH的H2O2水溶液以外,通过与评价1相同的方法,进行H2O2浓度(初始)的测定、H2O2的分解和H2O2浓度(最终)的测定,算出H2O2(最终)/H2O2(初始)×100[%]。结果示于表5和图6。
[表5]
作为分解抑制剂包含1,2,4-三唑的蚀刻液组合物在任一pH的情况下均显示了比不含分解抑制剂的蚀刻液组合物更高的H2O2分解抑制效果。
<评价4:H2O2分解抑制能力的温度依赖性>
作为H2O2分解抑制剂包含1,2,4-三唑的H2O2水溶液中,进行了使温度变化时的H2O2分解抑制能力进行了评价。除使用表7所示的温度的H2O2水溶液以外,通过与评价1相同的方法,进行H2O2浓度(初始)的测定、H2O2的分解和H2O2浓度(最终)的测定,算出H2O2(最终)/H2O2(初始)×100[%]。结果示于表6和图7。
[表6]
作为分解抑制剂包含1,2,4-三唑的蚀刻液组合物在任一温度的情况下均显示了比不含分解抑制剂的蚀刻液组合物更高的H2O2分解抑制效果。
<评价5:包含除TiN以外的金属的H2O2水溶液中的H2O2分解抑制能力>
作为H2O2分解抑制剂包含1,2,4-三唑的H2O2水溶液中,进行了添加W、Ag或Cu代替TiN时的H2O2分解抑制能力进行了评价。除添加表7所示的金属,溶解Cu时为了促进Cu的溶解而添加5wt%丙二酸以外,通过与评价1相同的方法,进行H2O2浓度(初始)的测定、H2O2的分解和H2O2浓度(最终)的测定,算出H2O2(最终)/H2O2(初始)×100[%]。结果示于表7和图8。
[表7]
作为分解抑制剂包含1,2,4-三唑的蚀刻液组合物在该组合物中溶解TiN的情况下显示H2O2分解抑制效果,而蚀刻液组合物中作为金属仅溶解W、Ag或Cu的情况下,未显示H2O2分解抑制效果。
<评价6:Co和Cu的防蚀性>
(圆晶的制作)
在直径300mm的Si基板上通过CVD法形成厚度40nm的Co膜,获得Co圆晶。
在直径200mm的Si基板上通过镀覆法形成厚度2000nm的Cu膜,获得Cu圆晶。
(圆晶的预处理)
Co和Cu在表面存在天然的氧化物,因此进行了除去它们的预处理。
将Cu基板切割为1.5×1.5cm2,在乙二酸(1wt%)水溶液中于25℃静置1分钟,用超纯水(DIW)冲淋1分钟,从而获得Cu圆晶(预处理后)。
将Co基板切割为1.5×1.5cm2,在乙二酸(10wt%)水溶液25℃静置10秒,用超纯水(DIW)冲淋10秒,从而获得Co圆晶(预处理后)。
(对Co、Cu的破坏性评价)
将上述Co圆晶(预处理后)和Cu圆晶(预处理后)浸渍于50mL具有表8的组成的蚀刻液组合物中,分别在60℃静置1分钟。然后,取出圆晶,获得蚀刻液组合物(Co、Cu浸渍后)。
(蚀刻液组合物的蚀刻速率的测定)
从上述蚀刻液组合物(Co、Cu浸渍后)取出1mL溶液,定容至50mL。通过ICP-MS(安捷伦制,型号:7500cs)测定定容后的蚀刻液组合物中的Co、Cu的浓度,根据圆晶的Co的表面积和蚀刻液组合物中的Co、Cu浓度,算出了蚀刻液组合物的Co、Cu的蚀刻速率(E.R.)。结果示于表8、图9和图10。
[表8]
作为分解抑制剂包含1,2,4-三唑的蚀刻液组合物不仅抑制氮化钛用蚀刻液组合物中所含的H2O2分解,还显示对于Cu和Co的防蚀效果。
Claims (13)
1.一种用于抑制氮化钛用蚀刻液组合物中所含的过氧化氢的分解的分解抑制剂,其中,包含选自唑类化合物、氨基羧酸类化合物和膦酸类化合物的至少1种化合物作为有效成分。
2.根据权利要求1所述的分解抑制剂,其中,还包含水。
3.根据权利要求1或2所述的分解抑制剂,其中,还包含水溶性有机溶剂。
4.根据权利要求1~3中的任一项所述的分解抑制剂,其中,包含选自唑类化合物、氨基羧酸类化合物和膦酸类化合物的至少2种化合物。
5.根据权利要求1~4中的任一项所述的分解抑制剂,其中,作为唑类化合物,包含选自1,2,4-三唑、1,2,3-三唑、咪唑和苯并咪唑的至少1种化合物。
6.根据权利要求1~4中的任一项所述的分解抑制剂,其中,作为氨基羧酸类化合物,包含选自反式-1,2-二氨基环己烷-N,N,N',N'-四乙酸、乙二胺四乙酸、二亚乙基三胺五乙酸、乙二醇二乙醚二胺四乙酸和三亚乙基四胺六乙酸的至少1种化合物。
7.根据权利要求1~4中的任一项所述的分解抑制剂,其中,作为膦酸类化合物,包含选自1-羟基乙烷-1,1-二膦酸和乙二胺四亚甲基膦酸的至少1种化合物。
8.根据权利要求1~7中的任一项所述的分解抑制剂,其中,该分解抑制剂用于添加至蚀刻液组合物,使得相对于蚀刻液组合物中的100ppm氮化钛,选自唑类化合物、氨基羧酸类化合物和膦酸类化合物的至少1种化合物达到2mmol/L以上的比例。
9.一种抑制氮化钛用蚀刻液组合物中所含的过氧化氢的分解的方法,其中,使用权利要求1~8中的任一项所述的分解抑制剂。
10.一种氮化钛用蚀刻液组合物,其中,包含权利要求1~8中的任一项所述的分解抑制剂和过氧化氢。
11.根据权利要求10所述的氮化钛用蚀刻液组合物,其中,相对于100ppm氮化钛,以2mmol/L以上的比例包含选自唑类化合物、氨基羧酸类化合物和膦酸类化合物的至少1种化合物。
12.根据权利要求10或11所述的氮化钛用蚀刻液组合物,其中,还包含除唑类化合物、氨基羧酸类化合物和膦酸类化合物以外的螯合剂。
13.根据权利要求10~12中的任一项所述的氮化钛用蚀刻液组合物,其中,pH为4.0~8.0。
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