KR101137242B1 - 전력 시스템 억제 방법 및 디바이스 및 그 구조 - Google Patents

전력 시스템 억제 방법 및 디바이스 및 그 구조 Download PDF

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Publication number
KR101137242B1
KR101137242B1 KR1020117005366A KR20117005366A KR101137242B1 KR 101137242 B1 KR101137242 B1 KR 101137242B1 KR 1020117005366 A KR1020117005366 A KR 1020117005366A KR 20117005366 A KR20117005366 A KR 20117005366A KR 101137242 B1 KR101137242 B1 KR 101137242B1
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South Korea
Prior art keywords
transistor
output
voltage
current
transistors
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Expired - Fee Related
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KR1020117005366A
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English (en)
Korean (ko)
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KR20110039579A (ko
Inventor
조셉 할라믹
제퍼슨 더블유. 할
Original Assignee
세미컨덕터 콤포넨츠 인더스트리즈 엘엘씨
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/013—Manufacturing their source or drain regions, e.g. silicided source or drain regions
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements
    • H10D89/819—Bias arrangements for gate electrodes of FETs, e.g. RC networks or voltage partitioning circuits

Landscapes

  • Dc-Dc Converters (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Direct Current Feeding And Distribution (AREA)
  • Amplifiers (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Revetment (AREA)
  • Steering Control In Accordance With Driving Conditions (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Lock And Its Accessories (AREA)
KR1020117005366A 2003-10-14 2004-09-10 전력 시스템 억제 방법 및 디바이스 및 그 구조 Expired - Fee Related KR101137242B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/685,091 US6943069B2 (en) 2003-10-14 2003-10-14 Power system inhibit method and device and structure therefor
US10/685,091 2003-10-14
PCT/US2004/029297 WO2005040952A2 (en) 2003-10-14 2004-09-10 Power system inhibit method and device and structure therefor

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020067007236A Division KR101045197B1 (ko) 2003-10-14 2004-09-10 전력 시스템 억제 방법 및 디바이스 및 그 구조

Publications (2)

Publication Number Publication Date
KR20110039579A KR20110039579A (ko) 2011-04-19
KR101137242B1 true KR101137242B1 (ko) 2012-04-26

Family

ID=34423095

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117005366A Expired - Fee Related KR101137242B1 (ko) 2003-10-14 2004-09-10 전력 시스템 억제 방법 및 디바이스 및 그 구조

Country Status (9)

Country Link
US (3) US6943069B2 (https=)
EP (2) EP1673671B1 (https=)
JP (2) JP4836796B2 (https=)
KR (1) KR101137242B1 (https=)
CN (2) CN101106130B (https=)
AT (2) ATE388433T1 (https=)
DE (2) DE602004022470D1 (https=)
TW (1) TWI339324B (https=)
WO (1) WO2005040952A2 (https=)

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US20060086974A1 (en) * 2004-10-26 2006-04-27 Power Integrations, Inc. Integrated circuit with multi-length power transistor segments
US7135748B2 (en) * 2004-10-26 2006-11-14 Power Integrations, Inc. Integrated circuit with multi-length output transistor segment
US7306999B2 (en) * 2005-01-25 2007-12-11 Semiconductor Components Industries, L.L.C. High voltage sensor device and method therefor
US7955943B2 (en) * 2005-01-25 2011-06-07 Semiconductor Components Industries, Llc High voltage sensor device and method therefor
US7477532B2 (en) 2005-08-18 2009-01-13 Semiconductor Components Industries, L.L.C. Method of forming a start-up device and structure therefor
CN100495881C (zh) * 2005-12-21 2009-06-03 昂宝电子（上海）有限公司 用于驱动双极晶体管的系统和用于控制电源变换器的系统
JP5343306B2 (ja) * 2006-03-24 2013-11-13 富士電機株式会社 スイッチング電源用ｉｃおよびスイッチング電源
JP5564749B2 (ja) 2006-11-20 2014-08-06 富士電機株式会社 半導体装置、半導体集積回路、スイッチング電源用制御ｉｃおよびスイッチング電源装置
US7564704B2 (en) * 2006-12-05 2009-07-21 Semiconductor Components Industries, L.L.C. Method of forming a power supply controller and structure therefor
KR20080111333A (ko) * 2007-06-18 2008-12-23 삼성전기주식회사 전압 검출 소자 및 이를 이용한 ａｄ 컨버터
JP2009147001A (ja) * 2007-12-12 2009-07-02 Seiko Instruments Inc 半導体装置
JP5217544B2 (ja) * 2008-03-19 2013-06-19 富士電機株式会社 スイッチング電源制御用半導体装置、起動回路、およびスイッチング電源装置の起動方法
US8207580B2 (en) * 2009-05-29 2012-06-26 Power Integrations, Inc. Power integrated circuit device with incorporated sense FET
TWI503956B (zh) 2009-09-30 2015-10-11 Semiconductor Components Ind 高電壓感測器設備及其方法
US8411471B2 (en) 2010-06-18 2013-04-02 Infineon Technologies Ag Electronic circuit and semiconductor arrangement with a load, a sense and a start-up transistor
JP5589827B2 (ja) 2010-12-24 2014-09-17 サンケン電気株式会社 起動回路、スイッチング電源用ｉｃ及びスイッチング電源装置
JP2012161117A (ja) * 2011-01-28 2012-08-23 Rohm Co Ltd Ｄｃ／ｄｃコンバータならびにそれを用いた電源装置および電子機器
US9048747B2 (en) 2011-11-23 2015-06-02 Zahid Ansari Switched-mode power supply startup circuit, method, and system incorporating same
US20130271102A1 (en) * 2012-04-12 2013-10-17 Roger Lin Power supply control structure
JP6070164B2 (ja) * 2012-12-21 2017-02-01 サンケン電気株式会社 スイッチング電源装置
US9467061B2 (en) * 2014-08-29 2016-10-11 Infineon Technologies Austria Ag System and method for driving a transistor
US10340686B2 (en) 2014-12-11 2019-07-02 Denso Corporation Electronic device
CN106298768B (zh) * 2015-06-10 2019-03-19 联华电子股份有限公司 半导体元件及半导体元件的操作方法
JP6072881B2 (ja) * 2015-11-04 2017-02-01 ローム株式会社 Ｄｃ／ｄｃコンバータならびにそれを用いた電源装置および電子機器
US10910822B2 (en) * 2018-07-06 2021-02-02 Texas Instruments Incorporated Control of a power transistor with a drive circuit
US10679938B2 (en) 2018-07-31 2020-06-09 Texas Instruments Incorporated Power transistor coupled to multiple sense transistors

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JP2001251173A (ja) 1999-12-28 2001-09-14 Nissan Motor Co Ltd 電流制御型半導体素子用駆動回路

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JP2001251173A (ja) 1999-12-28 2001-09-14 Nissan Motor Co Ltd 電流制御型半導体素子用駆動回路

Also Published As

Publication number Publication date
ATE388433T1 (de) 2008-03-15
TW200513822A (en) 2005-04-16
DE602004012305D1 (de) 2008-04-17
US20050077551A1 (en) 2005-04-14
US20050225362A1 (en) 2005-10-13
US7826238B2 (en) 2010-11-02
EP1673671A2 (en) 2006-06-28
US20070190700A1 (en) 2007-08-16
CN101106130B (zh) 2010-06-02
HK1095393A1 (zh) 2007-05-04
KR20110039579A (ko) 2011-04-19
CN100458638C (zh) 2009-02-04
JP5602111B2 (ja) 2014-10-08
JP4836796B2 (ja) 2011-12-14
DE602004012305T2 (de) 2009-03-19
CN1864115A (zh) 2006-11-15
DE602004022470D1 (de) 2009-09-17
EP1843470B1 (en) 2009-08-05
CN101106130A (zh) 2008-01-16
US6943069B2 (en) 2005-09-13
TWI339324B (en) 2011-03-21
JP2007509493A (ja) 2007-04-12
HK1114945A1 (zh) 2008-11-14
US7227203B2 (en) 2007-06-05
EP1673671B1 (en) 2008-03-05
JP2012023953A (ja) 2012-02-02
WO2005040952A2 (en) 2005-05-06
WO2005040952A3 (en) 2005-08-04
EP1843470A1 (en) 2007-10-10
ATE438953T1 (de) 2009-08-15

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