KR101127890B1 - 레이저 조사장치 및 레이저 조사방법 - Google Patents

레이저 조사장치 및 레이저 조사방법 Download PDF

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KR101127890B1
KR101127890B1 KR1020077000099A KR20077000099A KR101127890B1 KR 101127890 B1 KR101127890 B1 KR 101127890B1 KR 1020077000099 A KR1020077000099 A KR 1020077000099A KR 20077000099 A KR20077000099 A KR 20077000099A KR 101127890 B1 KR101127890 B1 KR 101127890B1
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KR20070047275A (ko
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코이치로 타나카
요시아키 야마모토
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가부시키가이샤 한도오따이 에네루기 켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2923—Materials being conductive materials, e.g. metallic silicides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
    • H—ELECTRICITY
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3814—Continuous wave laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing

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  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
KR1020077000099A 2004-06-18 2005-06-15 레이저 조사장치 및 레이저 조사방법 Expired - Fee Related KR101127890B1 (ko)

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Application Number Priority Date Filing Date Title
JP2004180790 2004-06-18
JPJP-P-2004-00180790 2004-06-18
PCT/JP2005/011397 WO2005124841A1 (en) 2004-06-18 2005-06-15 Laser irradiation apparatus and laser irradiation method

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KR20070047275A KR20070047275A (ko) 2007-05-04
KR101127890B1 true KR101127890B1 (ko) 2012-06-12

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US (1) US7566669B2 (https=)
JP (1) JP5072197B2 (https=)
KR (1) KR101127890B1 (https=)
CN (2) CN100524629C (https=)
WO (1) WO2005124841A1 (https=)

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US7812283B2 (en) * 2004-03-26 2010-10-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation method, laser irradiation apparatus, and method for fabricating semiconductor device
US7282735B2 (en) * 2005-03-31 2007-10-16 Xerox Corporation TFT having a fluorocarbon-containing layer
US8395084B2 (en) 2005-05-02 2013-03-12 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus and laser irradiation method
PL2179737T3 (pl) * 2005-07-01 2014-01-31 Index Pharmaceuticals Ab Sposób do modulowania wrażliwości na steroidy
CN101617069B (zh) * 2005-12-05 2012-05-23 纽约市哥伦比亚大学理事会 处理膜的系统和方法以及薄膜
CN101622722B (zh) * 2007-02-27 2012-11-21 卡尔蔡司激光器材有限责任公司 连续涂覆设备、生产晶态薄膜和太阳电池的方法
JP5581563B2 (ja) * 2007-03-08 2014-09-03 株式会社日立製作所 照明装置並びにそれを用いた欠陥検査装置及びその方法並びに高さ計測装置及びその方法
US7820531B2 (en) 2007-10-15 2010-10-26 Sony Corporation Method of manufacturing semiconductor device, method of manufacturing display apparatus, apparatus of manufacturing semiconductor device, and display apparatus
JP2011071261A (ja) * 2009-09-25 2011-04-07 Ushio Inc レーザーアニール装置
KR20110114972A (ko) * 2010-04-14 2011-10-20 삼성전자주식회사 레이저 빔을 이용한 기판의 가공 방법
US20120225568A1 (en) * 2011-03-03 2012-09-06 Tokyo Electron Limited Annealing method and annealing apparatus
WO2012164626A1 (ja) * 2011-06-02 2012-12-06 パナソニック株式会社 薄膜半導体装置の製造方法、薄膜半導体アレイ基板の製造方法、結晶性シリコン薄膜の形成方法、及び結晶性シリコン薄膜の形成装置
JP5861494B2 (ja) * 2012-02-23 2016-02-16 三菱マテリアル株式会社 レーザ加工装置およびレーザ加工方法
JP2013193110A (ja) * 2012-03-21 2013-09-30 Sumitomo Heavy Ind Ltd レーザ加工装置及びレーザ加工方法
CN102922142A (zh) * 2012-10-30 2013-02-13 张立国 一种激光加工的方法
JP5725518B2 (ja) * 2013-04-17 2015-05-27 株式会社日本製鋼所 レーザ光遮蔽部材、レーザ処理装置およびレーザ光照射方法
JP2017528922A (ja) * 2014-07-03 2017-09-28 アイピージー フォトニクス コーポレーション ファイバーレーザーによってアモルファスシリコン基板を均一に結晶化させるための方法及びシステム
KR102582652B1 (ko) * 2016-12-21 2023-09-25 삼성디스플레이 주식회사 레이저 결정화 장치
JP6556812B2 (ja) * 2017-11-28 2019-08-07 Ｎｉｓｓｈａ株式会社 ハードコート付フィルムタイプタッチセンサとこれを用いたフレキシブルディバイス
CN110091078A (zh) * 2019-05-31 2019-08-06 华中科技大学 一种用于玻璃的三维柱状孔激光切割方法
JP2021111725A (ja) 2020-01-14 2021-08-02 株式会社ブイ・テクノロジー レーザアニール装置及びレーザアニール方法
CN114078695A (zh) * 2020-08-10 2022-02-22 中芯南方集成电路制造有限公司 一种退火方法
JP7795880B2 (ja) * 2021-07-12 2026-01-08 住友重機械工業株式会社 アニール装置の制御装置、アニール装置、及びアニール方法
CN114054971B (zh) * 2022-01-10 2022-07-12 武汉华工激光工程有限责任公司 一种自动实时gv值检测及补偿的方法和系统

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JP4024657B2 (ja) 2002-11-21 2007-12-19 株式会社日本製鋼所 結晶の周期性構造の形成方法及びその装置

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JP2000340503A (ja) 1999-05-26 2000-12-08 Seiko Epson Corp 半導体膜の製造方法、薄膜トランジスタの製造方法、アクティブマトリクス基板
JP2003257885A (ja) 2001-09-25 2003-09-12 Semiconductor Energy Lab Co Ltd レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法

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US20070148834A1 (en) 2007-06-28
KR20070047275A (ko) 2007-05-04
JP5072197B2 (ja) 2012-11-14
CN100524629C (zh) 2009-08-05
CN1969377A (zh) 2007-05-23
CN101599427B (zh) 2012-05-30
US7566669B2 (en) 2009-07-28
JP2006032928A (ja) 2006-02-02
CN101599427A (zh) 2009-12-09
WO2005124841A1 (en) 2005-12-29

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