KR101120590B1 - 성막장치 및 성막방법 - Google Patents

성막장치 및 성막방법 Download PDF

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Publication number
KR101120590B1
KR101120590B1 KR1020080128842A KR20080128842A KR101120590B1 KR 101120590 B1 KR101120590 B1 KR 101120590B1 KR 1020080128842 A KR1020080128842 A KR 1020080128842A KR 20080128842 A KR20080128842 A KR 20080128842A KR 101120590 B1 KR101120590 B1 KR 101120590B1
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South Korea
Prior art keywords
electrode
region
film
heat flow
flow control
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Expired - Fee Related
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KR1020080128842A
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English (en)
Korean (ko)
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KR20090065472A (ko
Inventor
가즈히토 니시무라
히데키 사사오카
Original Assignee
가시오게산키 가부시키가이샤
자이단호진 고치켄산교신코센타
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/272—Diamond only using DC, AC or RF discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/503—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using DC or AC discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Carbon And Carbon Compounds (AREA)
KR1020080128842A 2007-12-17 2008-12-17 성막장치 및 성막방법 Expired - Fee Related KR101120590B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007325303A JP4533925B2 (ja) 2007-12-17 2007-12-17 成膜装置及び成膜方法
JPJP-P-2007-325303 2007-12-17

Publications (2)

Publication Number Publication Date
KR20090065472A KR20090065472A (ko) 2009-06-22
KR101120590B1 true KR101120590B1 (ko) 2012-03-09

Family

ID=40753798

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080128842A Expired - Fee Related KR101120590B1 (ko) 2007-12-17 2008-12-17 성막장치 및 성막방법

Country Status (4)

Country Link
US (1) US7935548B2 (https=)
JP (1) JP4533925B2 (https=)
KR (1) KR101120590B1 (https=)
CN (1) CN101463472B (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102471883A (zh) * 2009-07-14 2012-05-23 赫姆洛克半导体公司 抑制沉积物在制造系统中的形成的方法
BR112013010515A2 (pt) * 2010-10-29 2016-08-02 Baker Hughes Inc partículas de grafeno revestidas de diamante, composições e estruturas intermédias compreendendo o mesmo e os métodos de formação de poli cristalinos de partículas de diamante grafeno-revestido e compactos
US8840693B2 (en) 2010-10-29 2014-09-23 Baker Hughes Incorporated Coated particles and related methods
DE102011009347B4 (de) * 2010-11-29 2016-05-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung eines kohlenstoffhaltigen Schichtsystems sowie Vorrichtung zur Durchführung des Verfahrens
CN102367570B (zh) * 2011-11-01 2014-11-19 南昌航空大学 一种制备金刚石-石墨烯复合膜的方法
CN102517633B (zh) * 2011-12-26 2015-05-20 常州二维碳素科技有限公司 一种生长石墨烯的支架及方法
DE102012205616B4 (de) * 2012-04-04 2016-07-14 Siltronic Ag Vorrichtung zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels Gasphasenabscheidung
US20150197852A1 (en) * 2014-01-13 2015-07-16 Taiwan Semiconductor Manufacturing Co., Ltd. Plasma processing apparatus and plasma-uniformity control method
CN104809343B (zh) * 2015-04-23 2018-09-14 西安理工大学 一种等离子体中使用电流密度卷积完全匹配层的实现方法
US10816476B2 (en) * 2016-03-04 2020-10-27 Vg Systems Limited XPS and Raman sample analysis system and method
US10535499B2 (en) * 2017-11-03 2020-01-14 Varian Semiconductor Equipment Associates, Inc. Varied component density for thermal isolation
WO2021091786A1 (en) * 2019-11-04 2021-05-14 Applied Materials, Inc. Systems and methods for substrate support temperature control
CN111647879A (zh) * 2020-04-20 2020-09-11 中国科学技术大学 一种化学气相沉积装置与方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076103A (ja) 2000-08-23 2002-03-15 Hitachi Ltd 試料台の温度制御方法及び装置と試料処理方法及び装置
JP2006013302A (ja) * 2004-06-29 2006-01-12 Ngk Insulators Ltd 基板載置装置及び基板温度調整方法
JP2006257495A (ja) 2005-03-17 2006-09-28 Tokyo Electron Ltd 基板保持部材及び基板処理装置
JP2007119908A (ja) * 2005-09-30 2007-05-17 Kochi Prefecture Sangyo Shinko Center プラズマｃｖｄ装置及びプラズマ表面処理方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0460552U (https=) * 1990-09-28 1992-05-25
JP3595853B2 (ja) 1999-03-18 2004-12-02 日本エー・エス・エム株式会社 プラズマｃｖｄ成膜装置
US7418921B2 (en) 2005-08-12 2008-09-02 Asm Japan K.K. Plasma CVD apparatus for forming uniform film

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002076103A (ja) 2000-08-23 2002-03-15 Hitachi Ltd 試料台の温度制御方法及び装置と試料処理方法及び装置
JP2006013302A (ja) * 2004-06-29 2006-01-12 Ngk Insulators Ltd 基板載置装置及び基板温度調整方法
JP2006257495A (ja) 2005-03-17 2006-09-28 Tokyo Electron Ltd 基板保持部材及び基板処理装置
JP2007119908A (ja) * 2005-09-30 2007-05-17 Kochi Prefecture Sangyo Shinko Center プラズマｃｖｄ装置及びプラズマ表面処理方法

Also Published As

Publication number Publication date
US7935548B2 (en) 2011-05-03
JP4533925B2 (ja) 2010-09-01
CN101463472A (zh) 2009-06-24
US20090155934A1 (en) 2009-06-18
JP2009144224A (ja) 2009-07-02
CN101463472B (zh) 2012-01-11
KR20090065472A (ko) 2009-06-22

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