KR101118697B1 - 폴리아미드산을 포함하는 하층 반사방지막 형성조성물 - Google Patents

폴리아미드산을 포함하는 하층 반사방지막 형성조성물 Download PDF

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Publication number
KR101118697B1
KR101118697B1 KR1020077005380A KR20077005380A KR101118697B1 KR 101118697 B1 KR101118697 B1 KR 101118697B1 KR 1020077005380 A KR1020077005380 A KR 1020077005380A KR 20077005380 A KR20077005380 A KR 20077005380A KR 101118697 B1 KR101118697 B1 KR 101118697B1
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KR
South Korea
Prior art keywords
compound
antireflection film
acid
lower layer
photoresist
Prior art date
Application number
KR1020077005380A
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English (en)
Korean (ko)
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KR20070048237A (ko
Inventor
타다시 하타나카
타카히로 사카구치
토모유키 에노모토
시게오 키무라
Original Assignee
닛산 가가쿠 고교 가부시키 가이샤
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Publication of KR20070048237A publication Critical patent/KR20070048237A/ko
Application granted granted Critical
Publication of KR101118697B1 publication Critical patent/KR101118697B1/ko

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Resins (AREA)
KR1020077005380A 2004-09-03 2005-08-23 폴리아미드산을 포함하는 하층 반사방지막 형성조성물 KR101118697B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2004-00256655 2004-09-03
JP2004256655 2004-09-03
PCT/JP2005/015276 WO2006027950A1 (ja) 2004-09-03 2005-08-23 ポリアミド酸を含む下層反射防止膜形成組成物

Publications (2)

Publication Number Publication Date
KR20070048237A KR20070048237A (ko) 2007-05-08
KR101118697B1 true KR101118697B1 (ko) 2012-03-12

Family

ID=36036238

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077005380A KR101118697B1 (ko) 2004-09-03 2005-08-23 폴리아미드산을 포함하는 하층 반사방지막 형성조성물

Country Status (5)

Country Link
JP (1) JP4466877B2 (ja)
KR (1) KR101118697B1 (ja)
CN (2) CN101010634A (ja)
TW (1) TWI389935B (ja)
WO (1) WO2006027950A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7563563B2 (en) 2006-04-18 2009-07-21 International Business Machines Corporation Wet developable bottom antireflective coating composition and method for use thereof
US8257901B2 (en) 2009-03-10 2012-09-04 Lg Chem, Ltd. Polyimide-based polymers, copolymers thereof and positive type photoresist compositions comprising the same
KR101056962B1 (ko) * 2009-03-10 2011-08-17 주식회사 엘지화학 폴리이미드계 중합체와 이들의 공중합체 혼합물 및 이들을 포함하는 포지티브형 감광성 수지 조성물
US8895230B2 (en) 2011-10-10 2014-11-25 Brewer Science Inc. Spin-on carbon compositions for lithographic processing
JP5817939B2 (ja) * 2013-10-18 2015-11-18 東レ株式会社 ポリアミド樹脂組成物、製造方法、成形品
JP7073845B2 (ja) * 2018-03-28 2022-05-24 日産化学株式会社 重合体及びそれを含む樹脂組成物
US11022885B2 (en) * 2018-08-31 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Photosensitive middle layer
JPWO2022186312A1 (ja) * 2021-03-04 2022-09-09

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003011974A1 (fr) * 2001-07-26 2003-02-13 Nissan Chemical Industries, Ltd. Composition de resine d'acide polyamique
WO2006040922A1 (ja) * 2004-10-14 2006-04-20 Nissan Chemical Industries, Ltd. 芳香族スルホン酸エステル化合物及び光酸発生剤を含む下層反射防止膜形成組成物

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0572736A (ja) * 1991-09-18 1993-03-26 Hitachi Chem Co Ltd 含フツ素系ポリイミド樹脂膜パターンの製造法
US5397684A (en) * 1993-04-27 1995-03-14 International Business Machines Corporation Antireflective polyimide dielectric for photolithography
JP3031214B2 (ja) * 1995-09-11 2000-04-10 信越化学工業株式会社 反射防止膜材料
JP2000007783A (ja) * 1998-06-23 2000-01-11 Hitachi Chemical Dupont Microsystems Ltd ポリイミド前駆体樹脂組成物及びその製造方法
US6455416B1 (en) * 2000-10-24 2002-09-24 Advanced Micro Devices, Inc. Developer soluble dyed BARC for dual damascene process
US7261997B2 (en) * 2002-01-17 2007-08-28 Brewer Science Inc. Spin bowl compatible polyamic acids/imides as wet developable polymer binders for anti-reflective coatings

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003011974A1 (fr) * 2001-07-26 2003-02-13 Nissan Chemical Industries, Ltd. Composition de resine d'acide polyamique
WO2006040922A1 (ja) * 2004-10-14 2006-04-20 Nissan Chemical Industries, Ltd. 芳香族スルホン酸エステル化合物及び光酸発生剤を含む下層反射防止膜形成組成物

Also Published As

Publication number Publication date
WO2006027950A1 (ja) 2006-03-16
JPWO2006027950A1 (ja) 2008-05-08
CN103163736A (zh) 2013-06-19
TWI389935B (zh) 2013-03-21
KR20070048237A (ko) 2007-05-08
JP4466877B2 (ja) 2010-05-26
CN101010634A (zh) 2007-08-01
TW200619268A (en) 2006-06-16

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