KR101088785B1 - 폴리싱장치 및 폴리싱방법 - Google Patents
폴리싱장치 및 폴리싱방법 Download PDFInfo
- Publication number
- KR101088785B1 KR101088785B1 KR1020077013603A KR20077013603A KR101088785B1 KR 101088785 B1 KR101088785 B1 KR 101088785B1 KR 1020077013603 A KR1020077013603 A KR 1020077013603A KR 20077013603 A KR20077013603 A KR 20077013603A KR 101088785 B1 KR101088785 B1 KR 101088785B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- workpiece
- liquid supply
- polishing liquid
- polishing surface
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 981
- 238000000034 method Methods 0.000 title claims description 145
- 239000007788 liquid Substances 0.000 claims abstract description 416
- 230000033001 locomotion Effects 0.000 claims abstract description 13
- 239000010408 film Substances 0.000 claims description 98
- 230000008569 process Effects 0.000 claims description 68
- 230000007246 mechanism Effects 0.000 claims description 65
- 229910052802 copper Inorganic materials 0.000 claims description 63
- 238000007517 polishing process Methods 0.000 claims description 62
- 238000009826 distribution Methods 0.000 claims description 45
- 239000012530 fluid Substances 0.000 claims description 40
- 239000007789 gas Substances 0.000 claims description 37
- 239000010409 thin film Substances 0.000 claims description 27
- 238000002347 injection Methods 0.000 claims description 25
- 239000007924 injection Substances 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 23
- 238000004140 cleaning Methods 0.000 claims description 22
- 239000000126 substance Substances 0.000 claims description 20
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 239000007921 spray Substances 0.000 claims description 16
- 238000003486 chemical etching Methods 0.000 claims description 13
- 239000000243 solution Substances 0.000 claims description 11
- 238000003825 pressing Methods 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 4
- 238000007599 discharging Methods 0.000 claims description 3
- 239000003792 electrolyte Substances 0.000 claims description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910017604 nitric acid Inorganic materials 0.000 claims description 2
- 150000007524 organic acids Chemical class 0.000 claims description 2
- 239000004094 surface-active agent Substances 0.000 claims description 2
- 230000007704 transition Effects 0.000 claims description 2
- 238000011144 upstream manufacturing Methods 0.000 claims description 2
- 150000002500 ions Chemical class 0.000 claims 1
- 230000001737 promoting effect Effects 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 118
- 239000004065 semiconductor Substances 0.000 description 113
- 239000010949 copper Substances 0.000 description 63
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 62
- 230000004048 modification Effects 0.000 description 13
- 238000012986 modification Methods 0.000 description 13
- 238000005507 spraying Methods 0.000 description 11
- 230000009471 action Effects 0.000 description 8
- 230000007547 defect Effects 0.000 description 8
- 238000012546 transfer Methods 0.000 description 8
- 239000002002 slurry Substances 0.000 description 7
- 150000004699 copper complex Chemical class 0.000 description 6
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 238000000889 atomisation Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000005342 ion exchange Methods 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000002925 chemical effect Effects 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000001846 repelling effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910021642 ultra pure water Inorganic materials 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JPJP-P-2004-00334548 | 2004-11-18 | ||
JP2004334548A JP2006147773A (ja) | 2004-11-18 | 2004-11-18 | 研磨装置および研磨方法 |
PCT/JP2005/021314 WO2006054732A2 (en) | 2004-11-18 | 2005-11-15 | Polishing apparatus and polishing method |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20070086291A KR20070086291A (ko) | 2007-08-27 |
KR101088785B1 true KR101088785B1 (ko) | 2011-12-01 |
Family
ID=35726381
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020077013603A KR101088785B1 (ko) | 2004-11-18 | 2005-11-15 | 폴리싱장치 및 폴리싱방법 |
Country Status (6)
Country | Link |
---|---|
US (2) | US20060105678A1 (zh) |
EP (1) | EP1830985A2 (zh) |
JP (1) | JP2006147773A (zh) |
KR (1) | KR101088785B1 (zh) |
TW (1) | TWI290507B (zh) |
WO (1) | WO2006054732A2 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160003905A (ko) * | 2014-07-01 | 2016-01-12 | 주식회사 케이씨텍 | 화학 기계적 연마 장치 및 그 방법 |
US11676824B2 (en) | 2018-12-10 | 2023-06-13 | Samsung Electronics Co., Ltd. | Chemical mechanical polishing apparatus for controlling polishing uniformity |
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JP4162001B2 (ja) | 2005-11-24 | 2008-10-08 | 株式会社東京精密 | ウェーハ研磨装置及びウェーハ研磨方法 |
US20070135024A1 (en) * | 2005-12-08 | 2007-06-14 | Itsuki Kobata | Polishing pad and polishing apparatus |
JP4901301B2 (ja) * | 2006-05-23 | 2012-03-21 | 株式会社東芝 | 研磨方法及び半導体装置の製造方法 |
JP5080769B2 (ja) * | 2006-09-15 | 2012-11-21 | 株式会社東京精密 | 研磨方法及び研磨装置 |
DE102006056623A1 (de) * | 2006-11-30 | 2008-06-05 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren und System zum Steuern des chemisch-mechanischen Polierens durch steuerbares Bewegen eines Schleifmittelauslasses |
US11136667B2 (en) * | 2007-01-08 | 2021-10-05 | Eastman Kodak Company | Deposition system and method using a delivery head separated from a substrate by gas pressure |
US7520796B2 (en) * | 2007-01-31 | 2009-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with grooves to reduce slurry consumption |
US8047899B2 (en) * | 2007-07-26 | 2011-11-01 | Macronix International Co., Ltd. | Pad and method for chemical mechanical polishing |
JP2009131920A (ja) * | 2007-11-29 | 2009-06-18 | Ebara Corp | 研磨装置及び方法 |
JP5542818B2 (ja) * | 2008-08-14 | 2014-07-09 | アプライド マテリアルズ インコーポレイテッド | 可動スラリーディスペンサーを有する化学的機械的研磨機および方法 |
US8360817B2 (en) * | 2009-04-01 | 2013-01-29 | Ebara Corporation | Polishing apparatus and polishing method |
JP2014050955A (ja) * | 2009-04-01 | 2014-03-20 | Ebara Corp | 研磨装置及び研磨方法 |
JP5236561B2 (ja) * | 2009-04-14 | 2013-07-17 | 株式会社荏原製作所 | 研磨装置及び研磨方法 |
TW201235155A (en) * | 2011-02-25 | 2012-09-01 | Hon Hai Prec Ind Co Ltd | Cleaning scrap device for grinding plate |
KR101775464B1 (ko) * | 2011-05-31 | 2017-09-07 | 삼성전자주식회사 | 화학 기계적 연마 장치의 리테이너 링 |
US10065288B2 (en) * | 2012-02-14 | 2018-09-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing (CMP) platform for local profile control |
US20140080229A1 (en) * | 2012-09-14 | 2014-03-20 | Stmicroelectronics, Inc. | Adaptive semiconductor processing using feedback from measurement devices |
JP5890768B2 (ja) * | 2012-11-19 | 2016-03-22 | 株式会社東京精密 | 半導体ウエハ加工装置 |
JP5890767B2 (ja) * | 2012-11-19 | 2016-03-22 | 株式会社東京精密 | 半導体ウエハの厚み測定方法及び半導体ウエハ加工装置 |
US9718164B2 (en) | 2012-12-06 | 2017-08-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing system and polishing method |
TWI517935B (zh) | 2013-04-16 | 2016-01-21 | 國立台灣科技大學 | 氣體添加硏磨液的供應系統及其方法 |
US10410888B2 (en) * | 2014-02-27 | 2019-09-10 | Lam Research Ag | Device and method for removing liquid from a surface of a disc-like article |
CN106466805B (zh) * | 2015-08-19 | 2020-01-14 | 台湾积体电路制造股份有限公司 | 用于局部轮廓控制的化学机械抛光(cmp)平台 |
JP6970601B2 (ja) * | 2017-12-06 | 2021-11-24 | 株式会社荏原製作所 | 半導体製造装置の設計方法 |
JP7083722B2 (ja) * | 2018-08-06 | 2022-06-13 | 株式会社荏原製作所 | 研磨装置、及び、研磨方法 |
US11312015B2 (en) * | 2018-09-10 | 2022-04-26 | Reliabotics LLC | System and method for controlling the contact pressure applied by an articulated robotic arm to a working surface |
JP7152279B2 (ja) | 2018-11-30 | 2022-10-12 | 株式会社荏原製作所 | 研磨装置 |
US11400563B2 (en) * | 2018-12-07 | 2022-08-02 | Disco Corporation | Processing method for disk-shaped workpiece |
JP7145098B2 (ja) | 2019-02-21 | 2022-09-30 | 株式会社荏原製作所 | 研磨装置、研磨方法、および研磨液供給位置決定プログラムを記録した記録媒体 |
US11819976B2 (en) * | 2021-06-25 | 2023-11-21 | Applied Materials, Inc. | Spray system for slurry reduction during chemical mechanical polishing (cmp) |
JP2023009482A (ja) | 2021-07-07 | 2023-01-20 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
CN115229646B (zh) * | 2022-07-05 | 2023-11-10 | 肇庆宏旺金属实业有限公司 | 一种用于硅钢片加工的抛光装置及其使用方法 |
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US20030199229A1 (en) * | 2002-04-22 | 2003-10-23 | Applied Materials, Inc. | Flexible polishing fluid delivery system |
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-
2004
- 2004-11-18 JP JP2004334548A patent/JP2006147773A/ja active Pending
-
2005
- 2005-03-23 US US11/086,420 patent/US20060105678A1/en not_active Abandoned
- 2005-11-15 EP EP05806653A patent/EP1830985A2/en not_active Withdrawn
- 2005-11-15 WO PCT/JP2005/021314 patent/WO2006054732A2/en active Application Filing
- 2005-11-15 KR KR1020077013603A patent/KR101088785B1/ko active IP Right Grant
- 2005-11-16 TW TW094140214A patent/TWI290507B/zh active
-
2009
- 2009-02-06 US US12/367,037 patent/US20090142990A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US20030199229A1 (en) * | 2002-04-22 | 2003-10-23 | Applied Materials, Inc. | Flexible polishing fluid delivery system |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20160003905A (ko) * | 2014-07-01 | 2016-01-12 | 주식회사 케이씨텍 | 화학 기계적 연마 장치 및 그 방법 |
KR101637537B1 (ko) | 2014-07-01 | 2016-07-08 | 주식회사 케이씨텍 | 화학 기계적 연마 장치 및 그 방법 |
US11676824B2 (en) | 2018-12-10 | 2023-06-13 | Samsung Electronics Co., Ltd. | Chemical mechanical polishing apparatus for controlling polishing uniformity |
Also Published As
Publication number | Publication date |
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EP1830985A2 (en) | 2007-09-12 |
TWI290507B (en) | 2007-12-01 |
WO2006054732A3 (en) | 2006-08-03 |
TW200624224A (en) | 2006-07-16 |
KR20070086291A (ko) | 2007-08-27 |
WO2006054732A2 (en) | 2006-05-26 |
US20060105678A1 (en) | 2006-05-18 |
US20090142990A1 (en) | 2009-06-04 |
JP2006147773A (ja) | 2006-06-08 |
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