JP2006147773A - 研磨装置および研磨方法 - Google Patents

研磨装置および研磨方法 Download PDF

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Publication number
JP2006147773A
JP2006147773A JP2004334548A JP2004334548A JP2006147773A JP 2006147773 A JP2006147773 A JP 2006147773A JP 2004334548 A JP2004334548 A JP 2004334548A JP 2004334548 A JP2004334548 A JP 2004334548A JP 2006147773 A JP2006147773 A JP 2006147773A
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JP
Japan
Prior art keywords
polishing
liquid supply
polishing liquid
liquid
polished
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004334548A
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English (en)
Japanese (ja)
Other versions
JP2006147773A5 (zh
Inventor
Tatsuya Kohama
達也 小濱
Itsuki Obata
厳貴 小畠
Suekazu Nomura
季和 野村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP2004334548A priority Critical patent/JP2006147773A/ja
Priority to US11/086,420 priority patent/US20060105678A1/en
Priority to KR1020077013603A priority patent/KR101088785B1/ko
Priority to EP05806653A priority patent/EP1830985A2/en
Priority to PCT/JP2005/021314 priority patent/WO2006054732A2/en
Priority to TW094140214A priority patent/TWI290507B/zh
Publication of JP2006147773A publication Critical patent/JP2006147773A/ja
Publication of JP2006147773A5 publication Critical patent/JP2006147773A5/ja
Priority to US12/367,037 priority patent/US20090142990A1/en
Pending legal-status Critical Current

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
    • B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
    • B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
JP2004334548A 2004-11-18 2004-11-18 研磨装置および研磨方法 Pending JP2006147773A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2004334548A JP2006147773A (ja) 2004-11-18 2004-11-18 研磨装置および研磨方法
US11/086,420 US20060105678A1 (en) 2004-11-18 2005-03-23 Polishing apparatus and polishing method
KR1020077013603A KR101088785B1 (ko) 2004-11-18 2005-11-15 폴리싱장치 및 폴리싱방법
EP05806653A EP1830985A2 (en) 2004-11-18 2005-11-15 Polishing apparatus and polishing method
PCT/JP2005/021314 WO2006054732A2 (en) 2004-11-18 2005-11-15 Polishing apparatus and polishing method
TW094140214A TWI290507B (en) 2004-11-18 2005-11-16 Polishing apparatus and polishing method
US12/367,037 US20090142990A1 (en) 2004-11-18 2009-02-06 Method for polishing a workpiece

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004334548A JP2006147773A (ja) 2004-11-18 2004-11-18 研磨装置および研磨方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011087638A Division JP2011176342A (ja) 2011-04-11 2011-04-11 研磨方法及び配線形成方法

Publications (2)

Publication Number Publication Date
JP2006147773A true JP2006147773A (ja) 2006-06-08
JP2006147773A5 JP2006147773A5 (zh) 2008-01-10

Family

ID=35726381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004334548A Pending JP2006147773A (ja) 2004-11-18 2004-11-18 研磨装置および研磨方法

Country Status (6)

Country Link
US (2) US20060105678A1 (zh)
EP (1) EP1830985A2 (zh)
JP (1) JP2006147773A (zh)
KR (1) KR101088785B1 (zh)
TW (1) TWI290507B (zh)
WO (1) WO2006054732A2 (zh)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008068389A (ja) * 2006-09-15 2008-03-27 Tokyo Seimitsu Co Ltd 研磨方法及び研磨装置
JP2008188762A (ja) * 2007-01-31 2008-08-21 Rohm & Haas Electronic Materials Cmp Holdings Inc スラリー消費を低減するための溝を有する研磨パッド
US7753761B2 (en) 2005-11-24 2010-07-13 Tokyo Seimitsu Co., Ltd. Wafer polishing apparatus and wafer polishing method
KR20100109866A (ko) * 2009-04-01 2010-10-11 가부시키가이샤 에바라 세이사꾸쇼 연마장치 및 연마방법
JP2010247258A (ja) * 2009-04-14 2010-11-04 Ebara Corp 研磨装置及び研磨方法
JP2011530422A (ja) * 2008-08-14 2011-12-22 アプライド マテリアルズ インコーポレイテッド 可動スラリーディスペンサーを有する化学的機械的研磨機および方法
JP2014103215A (ja) * 2012-11-19 2014-06-05 Tokyo Seimitsu Co Ltd 半導体ウエハ加工装置
JP2014103213A (ja) * 2012-11-19 2014-06-05 Tokyo Seimitsu Co Ltd 半導体ウエハの厚み測定方法及び半導体ウエハ加工装置
JP2015061739A (ja) * 2013-10-31 2015-04-02 株式会社荏原製作所 研磨方法及び研磨装置
KR20150101958A (ko) * 2014-02-27 2015-09-04 램 리서치 아게 디스크-유사 물체의 표면으로부터 액체를 제거하기 위한 디바이스 및 방법
JP2020024996A (ja) * 2018-08-06 2020-02-13 株式会社荏原製作所 研磨装置、及び、研磨方法
JP2021137927A (ja) * 2020-03-06 2021-09-16 株式会社荏原製作所 研磨装置および処理システム
KR20230008609A (ko) 2021-07-07 2023-01-16 가부시키가이샤 에바라 세이사꾸쇼 연마 장치 및 연마 방법
US11839948B2 (en) 2018-11-30 2023-12-12 Ebara Corporation Polishing apparatus
JP7493966B2 (ja) 2020-03-06 2024-06-03 株式会社荏原製作所 研磨装置および処理システム

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JP4901301B2 (ja) * 2006-05-23 2012-03-21 株式会社東芝 研磨方法及び半導体装置の製造方法
DE102006056623A1 (de) * 2006-11-30 2008-06-05 Advanced Micro Devices, Inc., Sunnyvale Verfahren und System zum Steuern des chemisch-mechanischen Polierens durch steuerbares Bewegen eines Schleifmittelauslasses
US11136667B2 (en) * 2007-01-08 2021-10-05 Eastman Kodak Company Deposition system and method using a delivery head separated from a substrate by gas pressure
US8047899B2 (en) * 2007-07-26 2011-11-01 Macronix International Co., Ltd. Pad and method for chemical mechanical polishing
JP2009131920A (ja) * 2007-11-29 2009-06-18 Ebara Corp 研磨装置及び方法
TW201235155A (en) * 2011-02-25 2012-09-01 Hon Hai Prec Ind Co Ltd Cleaning scrap device for grinding plate
KR101775464B1 (ko) * 2011-05-31 2017-09-07 삼성전자주식회사 화학 기계적 연마 장치의 리테이너 링
US10065288B2 (en) * 2012-02-14 2018-09-04 Taiwan Semiconductor Manufacturing Co., Ltd. Chemical mechanical polishing (CMP) platform for local profile control
US20140080229A1 (en) * 2012-09-14 2014-03-20 Stmicroelectronics, Inc. Adaptive semiconductor processing using feedback from measurement devices
US9718164B2 (en) 2012-12-06 2017-08-01 Taiwan Semiconductor Manufacturing Company, Ltd. Polishing system and polishing method
TWI517935B (zh) 2013-04-16 2016-01-21 國立台灣科技大學 氣體添加硏磨液的供應系統及其方法
KR101637537B1 (ko) * 2014-07-01 2016-07-08 주식회사 케이씨텍 화학 기계적 연마 장치 및 그 방법
CN106466805B (zh) * 2015-08-19 2020-01-14 台湾积体电路制造股份有限公司 用于局部轮廓控制的化学机械抛光(cmp)平台
JP6970601B2 (ja) * 2017-12-06 2021-11-24 株式会社荏原製作所 半導体製造装置の設計方法
US11312015B2 (en) * 2018-09-10 2022-04-26 Reliabotics LLC System and method for controlling the contact pressure applied by an articulated robotic arm to a working surface
US11400563B2 (en) * 2018-12-07 2022-08-02 Disco Corporation Processing method for disk-shaped workpiece
KR20200070825A (ko) 2018-12-10 2020-06-18 삼성전자주식회사 연마 균일도를 제어할 수 있는 화학 기계적 연마 장치
JP7145098B2 (ja) 2019-02-21 2022-09-30 株式会社荏原製作所 研磨装置、研磨方法、および研磨液供給位置決定プログラムを記録した記録媒体
US11819976B2 (en) * 2021-06-25 2023-11-21 Applied Materials, Inc. Spray system for slurry reduction during chemical mechanical polishing (cmp)
CN115229646B (zh) * 2022-07-05 2023-11-10 肇庆宏旺金属实业有限公司 一种用于硅钢片加工的抛光装置及其使用方法

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JP2004303983A (ja) * 2003-03-31 2004-10-28 Fuji Photo Film Co Ltd 研磨パッド

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Cited By (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7753761B2 (en) 2005-11-24 2010-07-13 Tokyo Seimitsu Co., Ltd. Wafer polishing apparatus and wafer polishing method
US8043140B2 (en) 2005-11-24 2011-10-25 Tokyo Seimitsu Co., Ltd. Wafer polishing apparatus and wafer polishing method
JP2008068389A (ja) * 2006-09-15 2008-03-27 Tokyo Seimitsu Co Ltd 研磨方法及び研磨装置
JP2008188762A (ja) * 2007-01-31 2008-08-21 Rohm & Haas Electronic Materials Cmp Holdings Inc スラリー消費を低減するための溝を有する研磨パッド
JP2011530422A (ja) * 2008-08-14 2011-12-22 アプライド マテリアルズ インコーポレイテッド 可動スラリーディスペンサーを有する化学的機械的研磨機および方法
KR101598548B1 (ko) 2009-04-01 2016-02-29 가부시키가이샤 에바라 세이사꾸쇼 연마장치 및 연마방법
KR20100109866A (ko) * 2009-04-01 2010-10-11 가부시키가이샤 에바라 세이사꾸쇼 연마장치 및 연마방법
US8360817B2 (en) 2009-04-01 2013-01-29 Ebara Corporation Polishing apparatus and polishing method
JP2010247258A (ja) * 2009-04-14 2010-11-04 Ebara Corp 研磨装置及び研磨方法
JP2014103215A (ja) * 2012-11-19 2014-06-05 Tokyo Seimitsu Co Ltd 半導体ウエハ加工装置
JP2014103213A (ja) * 2012-11-19 2014-06-05 Tokyo Seimitsu Co Ltd 半導体ウエハの厚み測定方法及び半導体ウエハ加工装置
JP2015061739A (ja) * 2013-10-31 2015-04-02 株式会社荏原製作所 研磨方法及び研磨装置
KR20150101958A (ko) * 2014-02-27 2015-09-04 램 리서치 아게 디스크-유사 물체의 표면으로부터 액체를 제거하기 위한 디바이스 및 방법
KR102175562B1 (ko) 2014-02-27 2020-11-09 램 리서치 아게 디스크-유사 물체의 표면으로부터 액체를 제거하기 위한 디바이스 및 방법
JP2020024996A (ja) * 2018-08-06 2020-02-13 株式会社荏原製作所 研磨装置、及び、研磨方法
JP7083722B2 (ja) 2018-08-06 2022-06-13 株式会社荏原製作所 研磨装置、及び、研磨方法
US11839948B2 (en) 2018-11-30 2023-12-12 Ebara Corporation Polishing apparatus
JP2021137927A (ja) * 2020-03-06 2021-09-16 株式会社荏原製作所 研磨装置および処理システム
JP7493966B2 (ja) 2020-03-06 2024-06-03 株式会社荏原製作所 研磨装置および処理システム
KR20230008609A (ko) 2021-07-07 2023-01-16 가부시키가이샤 에바라 세이사꾸쇼 연마 장치 및 연마 방법

Also Published As

Publication number Publication date
EP1830985A2 (en) 2007-09-12
TWI290507B (en) 2007-12-01
KR101088785B1 (ko) 2011-12-01
WO2006054732A3 (en) 2006-08-03
TW200624224A (en) 2006-07-16
KR20070086291A (ko) 2007-08-27
WO2006054732A2 (en) 2006-05-26
US20060105678A1 (en) 2006-05-18
US20090142990A1 (en) 2009-06-04

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