JP2006147773A5 - - Google Patents
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- Publication number
- JP2006147773A5 JP2006147773A5 JP2004334548A JP2004334548A JP2006147773A5 JP 2006147773 A5 JP2006147773 A5 JP 2006147773A5 JP 2004334548 A JP2004334548 A JP 2004334548A JP 2004334548 A JP2004334548 A JP 2004334548A JP 2006147773 A5 JP2006147773 A5 JP 2006147773A5
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- polishing liquid
- liquid supply
- semiconductor wafer
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005498 polishing Methods 0.000 claims description 667
- 239000007788 liquid Substances 0.000 claims description 289
- 239000004065 semiconductor Substances 0.000 description 70
- 239000010408 film Substances 0.000 description 67
- 239000010949 copper Substances 0.000 description 58
- RYGMFSIKBFXOCR-UHFFFAOYSA-N copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 57
- 229910052802 copper Inorganic materials 0.000 description 57
- 238000000227 grinding Methods 0.000 description 34
- 238000000034 method Methods 0.000 description 30
- 239000000463 material Substances 0.000 description 24
- 239000006185 dispersion Substances 0.000 description 22
- 239000007789 gas Substances 0.000 description 22
- 238000004140 cleaning Methods 0.000 description 19
- 238000009826 distribution Methods 0.000 description 18
- 230000004048 modification Effects 0.000 description 18
- 238000006011 modification reaction Methods 0.000 description 18
- 239000012530 fluid Substances 0.000 description 17
- 230000002093 peripheral Effects 0.000 description 17
- 239000000126 substance Substances 0.000 description 15
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 15
- 238000003825 pressing Methods 0.000 description 14
- 239000010409 thin film Substances 0.000 description 11
- 238000007517 polishing process Methods 0.000 description 10
- 238000003486 chemical etching Methods 0.000 description 9
- 230000001276 controlling effect Effects 0.000 description 7
- 239000002002 slurry Substances 0.000 description 6
- SXBOEBVXYQFVJM-UHFFFAOYSA-L copper;2-azanidylpentanedioate Chemical compound [Cu+2].[O-]C(=O)C([NH-])CCC([O-])=O SXBOEBVXYQFVJM-UHFFFAOYSA-L 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000003628 erosive Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
- 238000000889 atomisation Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000000717 retained Effects 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N HF Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000005755 formation reaction Methods 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N HCl Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910004166 TaN Inorganic materials 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 235000020127 ayran Nutrition 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000001143 conditioned Effects 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 230000000875 corresponding Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N dihydrogen sulfide Chemical compound S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- -1 halogen acids Chemical class 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating Effects 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical Effects 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N tin hydride Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000012498 ultrapure water Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004334548A JP2006147773A (ja) | 2004-11-18 | 2004-11-18 | 研磨装置および研磨方法 |
| US11/086,420 US20060105678A1 (en) | 2004-11-18 | 2005-03-23 | Polishing apparatus and polishing method |
| PCT/JP2005/021314 WO2006054732A2 (en) | 2004-11-18 | 2005-11-15 | Polishing apparatus and polishing method |
| KR1020077013603A KR101088785B1 (ko) | 2004-11-18 | 2005-11-15 | 폴리싱장치 및 폴리싱방법 |
| EP05806653A EP1830985A2 (en) | 2004-11-18 | 2005-11-15 | Polishing apparatus and polishing method |
| TW094140214A TWI290507B (en) | 2004-11-18 | 2005-11-16 | Polishing apparatus and polishing method |
| US12/367,037 US20090142990A1 (en) | 2004-11-18 | 2009-02-06 | Method for polishing a workpiece |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004334548A JP2006147773A (ja) | 2004-11-18 | 2004-11-18 | 研磨装置および研磨方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011087638A Division JP2011176342A (ja) | 2011-04-11 | 2011-04-11 | 研磨方法及び配線形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006147773A JP2006147773A (ja) | 2006-06-08 |
| JP2006147773A5 true JP2006147773A5 (zh) | 2008-01-10 |
Family
ID=35726381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004334548A Pending JP2006147773A (ja) | 2004-11-18 | 2004-11-18 | 研磨装置および研磨方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US20060105678A1 (zh) |
| EP (1) | EP1830985A2 (zh) |
| JP (1) | JP2006147773A (zh) |
| KR (1) | KR101088785B1 (zh) |
| TW (1) | TWI290507B (zh) |
| WO (1) | WO2006054732A2 (zh) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4162001B2 (ja) | 2005-11-24 | 2008-10-08 | 株式会社東京精密 | ウェーハ研磨装置及びウェーハ研磨方法 |
| US20070135024A1 (en) * | 2005-12-08 | 2007-06-14 | Itsuki Kobata | Polishing pad and polishing apparatus |
| JP4901301B2 (ja) * | 2006-05-23 | 2012-03-21 | 株式会社東芝 | 研磨方法及び半導体装置の製造方法 |
| JP5080769B2 (ja) * | 2006-09-15 | 2012-11-21 | 株式会社東京精密 | 研磨方法及び研磨装置 |
| DE102006056623A1 (de) * | 2006-11-30 | 2008-06-05 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren und System zum Steuern des chemisch-mechanischen Polierens durch steuerbares Bewegen eines Schleifmittelauslasses |
| US11136667B2 (en) | 2007-01-08 | 2021-10-05 | Eastman Kodak Company | Deposition system and method using a delivery head separated from a substrate by gas pressure |
| US7520796B2 (en) * | 2007-01-31 | 2009-04-21 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with grooves to reduce slurry consumption |
| US8047899B2 (en) * | 2007-07-26 | 2011-11-01 | Macronix International Co., Ltd. | Pad and method for chemical mechanical polishing |
| JP2009131920A (ja) * | 2007-11-29 | 2009-06-18 | Ebara Corp | 研磨装置及び方法 |
| WO2010019264A2 (en) * | 2008-08-14 | 2010-02-18 | Applied Materials, Inc. | Chemical mechanical polisher having movable slurry dispensers and method |
| JP2014050955A (ja) * | 2009-04-01 | 2014-03-20 | Ebara Corp | 研磨装置及び研磨方法 |
| JP5236561B2 (ja) * | 2009-04-14 | 2013-07-17 | 株式会社荏原製作所 | 研磨装置及び研磨方法 |
| US8360817B2 (en) | 2009-04-01 | 2013-01-29 | Ebara Corporation | Polishing apparatus and polishing method |
| TW201235155A (en) * | 2011-02-25 | 2012-09-01 | Hon Hai Prec Ind Co Ltd | Cleaning scrap device for grinding plate |
| KR101775464B1 (ko) * | 2011-05-31 | 2017-09-07 | 삼성전자주식회사 | 화학 기계적 연마 장치의 리테이너 링 |
| US10065288B2 (en) * | 2012-02-14 | 2018-09-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Chemical mechanical polishing (CMP) platform for local profile control |
| US20140080229A1 (en) * | 2012-09-14 | 2014-03-20 | Stmicroelectronics, Inc. | Adaptive semiconductor processing using feedback from measurement devices |
| JP5890768B2 (ja) * | 2012-11-19 | 2016-03-22 | 株式会社東京精密 | 半導体ウエハ加工装置 |
| JP5890767B2 (ja) * | 2012-11-19 | 2016-03-22 | 株式会社東京精密 | 半導体ウエハの厚み測定方法及び半導体ウエハ加工装置 |
| US9718164B2 (en) | 2012-12-06 | 2017-08-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing system and polishing method |
| TWI517935B (zh) | 2013-04-16 | 2016-01-21 | 國立台灣科技大學 | 氣體添加硏磨液的供應系統及其方法 |
| US10410888B2 (en) * | 2014-02-27 | 2019-09-10 | Lam Research Ag | Device and method for removing liquid from a surface of a disc-like article |
| KR101637537B1 (ko) * | 2014-07-01 | 2016-07-08 | 주식회사 케이씨텍 | 화학 기계적 연마 장치 및 그 방법 |
| CN106466805B (zh) * | 2015-08-19 | 2020-01-14 | 台湾积体电路制造股份有限公司 | 用于局部轮廓控制的化学机械抛光(cmp)平台 |
| JP6970601B2 (ja) * | 2017-12-06 | 2021-11-24 | 株式会社荏原製作所 | 半導体製造装置の設計方法 |
| JP7083722B2 (ja) * | 2018-08-06 | 2022-06-13 | 株式会社荏原製作所 | 研磨装置、及び、研磨方法 |
| US11312015B2 (en) * | 2018-09-10 | 2022-04-26 | Reliabotics LLC | System and method for controlling the contact pressure applied by an articulated robotic arm to a working surface |
| JP7152279B2 (ja) | 2018-11-30 | 2022-10-12 | 株式会社荏原製作所 | 研磨装置 |
| US11400563B2 (en) * | 2018-12-07 | 2022-08-02 | Disco Corporation | Processing method for disk-shaped workpiece |
| KR20200070825A (ko) | 2018-12-10 | 2020-06-18 | 삼성전자주식회사 | 연마 균일도를 제어할 수 있는 화학 기계적 연마 장치 |
| JP7145098B2 (ja) | 2019-02-21 | 2022-09-30 | 株式会社荏原製作所 | 研磨装置、研磨方法、および研磨液供給位置決定プログラムを記録した記録媒体 |
| US11819976B2 (en) * | 2021-06-25 | 2023-11-21 | Applied Materials, Inc. | Spray system for slurry reduction during chemical mechanical polishing (cmp) |
| JP2023009482A (ja) | 2021-07-07 | 2023-01-20 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
| CN115229646B (zh) * | 2022-07-05 | 2023-11-10 | 肇庆宏旺金属实业有限公司 | 一种用于硅钢片加工的抛光装置及其使用方法 |
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| JP3779104B2 (ja) * | 1998-12-28 | 2006-05-24 | 株式会社Ｓｕｍｃｏ | ウェーハ研磨装置 |
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| KR100443770B1 (ko) * | 2001-03-26 | 2004-08-09 | 삼성전자주식회사 | 기판의 연마 방법 및 연마 장치 |
| JP4087581B2 (ja) * | 2001-06-06 | 2008-05-21 | 株式会社荏原製作所 | 研磨装置 |
| WO2003011523A1 (en) * | 2001-08-02 | 2003-02-13 | Applied Materials, Inc. | Multiport polishing fluid delivery system |
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| KR100454120B1 (ko) * | 2001-11-12 | 2004-10-26 | 삼성전자주식회사 | 화학적 기계적 연마 장비의 슬러리 공급 장치 및 방법 |
| US6722946B2 (en) * | 2002-01-17 | 2004-04-20 | Nutool, Inc. | Advanced chemical mechanical polishing system with smart endpoint detection |
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| US6884145B2 (en) * | 2002-11-22 | 2005-04-26 | Samsung Austin Semiconductor, L.P. | High selectivity slurry delivery system |
| US6947862B2 (en) * | 2003-02-14 | 2005-09-20 | Nikon Corporation | Method for simulating slurry flow for a grooved polishing pad |
| US6821895B2 (en) * | 2003-02-20 | 2004-11-23 | Taiwan Semiconductor Manufacturing Co., Ltd | Dynamically adjustable slurry feed arm for wafer edge profile improvement in CMP |
| JP2004303983A (ja) * | 2003-03-31 | 2004-10-28 | Fuji Photo Film Co Ltd | 研磨パッド |
| US6984166B2 (en) * | 2003-08-01 | 2006-01-10 | Chartered Semiconductor Manufacturing Ltd. | Zone polishing using variable slurry solid content |
| JP4464642B2 (ja) * | 2003-09-10 | 2010-05-19 | 株式会社荏原製作所 | 研磨状態監視装置、研磨状態監視方法、研磨装置及び研磨方法 |
| CN101817162A (zh) * | 2004-01-26 | 2010-09-01 | Tbw工业有限公司 | 用于化学机械平面化的多步骤、原位垫修整系统 |
| EP1758711B1 (en) * | 2004-06-21 | 2013-08-07 | Ebara Corporation | Polishing apparatus and polishing method |
-
2004
- 2004-11-18 JP JP2004334548A patent/JP2006147773A/ja active Pending
-
2005
- 2005-03-23 US US11/086,420 patent/US20060105678A1/en not_active Abandoned
- 2005-11-15 KR KR1020077013603A patent/KR101088785B1/ko active IP Right Grant
- 2005-11-15 WO PCT/JP2005/021314 patent/WO2006054732A2/en active Application Filing
- 2005-11-15 EP EP05806653A patent/EP1830985A2/en not_active Withdrawn
- 2005-11-16 TW TW094140214A patent/TWI290507B/zh active
-
2009
- 2009-02-06 US US12/367,037 patent/US20090142990A1/en not_active Abandoned
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