KR101084957B1 - 구리 기술 상호연결 구조를 사용하는 집적 회로 디바이스의 알루미늄 패드 파워 버스 및 신호 루팅 - Google Patents

구리 기술 상호연결 구조를 사용하는 집적 회로 디바이스의 알루미늄 패드 파워 버스 및 신호 루팅 Download PDF

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KR101084957B1
KR101084957B1 KR1020040023990A KR20040023990A KR101084957B1 KR 101084957 B1 KR101084957 B1 KR 101084957B1 KR 1020040023990 A KR1020040023990 A KR 1020040023990A KR 20040023990 A KR20040023990 A KR 20040023990A KR 101084957 B1 KR101084957 B1 KR 101084957B1
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interconnect
power bus
delete delete
layer
integrated circuit
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KR20040089496A (ko
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강승에이치.
크렙스롤랜드피.
스타이너커트조지
아유카와마이클씨.
머천트사일레시만신
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에이저 시스템즈 인크
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Application filed by 에이저 시스템즈 인크 filed Critical 에이저 시스템즈 인크
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Assigned to 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 reassignment 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드 권리의 전부이전등록 Assignors: 에이저 시스템즈 엘엘시
Assigned to 아바고 테크놀로지스 인터내셔널 세일즈 피티이 리미티드 reassignment 아바고 테크놀로지스 인터내셔널 세일즈 피티이 리미티드 권리의 전부이전등록 Assignors: 아바고 테크놀로지스 제너럴 아이피 (싱가포르) 피티이 리미티드
Assigned to 벨 세미컨덕터 엘엘씨 reassignment 벨 세미컨덕터 엘엘씨 권리의 전부이전등록 Assignors: 아바고 테크놀로지스 인터내셔널 세일즈 피티이 리미티드
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H10W20/0633—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material using subtractive patterning of the conductive members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/427—Power or ground buses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/435—Cross-sectional shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4405—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being aluminium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4421—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being copper
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5449—Dispositions of bond wires not being orthogonal to a side surface of the chip, e.g. fan-out arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
KR1020040023990A 2003-04-10 2004-04-08 구리 기술 상호연결 구조를 사용하는 집적 회로 디바이스의 알루미늄 패드 파워 버스 및 신호 루팅 Expired - Lifetime KR101084957B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US46250403P 2003-04-10 2003-04-10
US60/462,504 2003-04-10
US10/675,258 US7566964B2 (en) 2003-04-10 2003-09-30 Aluminum pad power bus and signal routing for integrated circuit devices utilizing copper technology interconnect structures
US10/675,258 2003-09-30

Publications (2)

Publication Number Publication Date
KR20040089496A KR20040089496A (ko) 2004-10-21
KR101084957B1 true KR101084957B1 (ko) 2011-11-23

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KR1020040023990A Expired - Lifetime KR101084957B1 (ko) 2003-04-10 2004-04-08 구리 기술 상호연결 구조를 사용하는 집적 회로 디바이스의 알루미늄 패드 파워 버스 및 신호 루팅

Country Status (5)

Country Link
US (1) US7566964B2 (https=)
JP (2) JP5258142B2 (https=)
KR (1) KR101084957B1 (https=)
GB (2) GB2427074B (https=)
TW (1) TWI344685B (https=)

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US7952206B2 (en) * 2005-09-27 2011-05-31 Agere Systems Inc. Solder bump structure for flip chip semiconductor devices and method of manufacture therefore
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US7888257B2 (en) * 2007-10-10 2011-02-15 Agere Systems Inc. Integrated circuit package including wire bonds
US8183698B2 (en) * 2007-10-31 2012-05-22 Agere Systems Inc. Bond pad support structure for semiconductor device
US20100289132A1 (en) * 2009-05-13 2010-11-18 Shih-Fu Huang Substrate having embedded single patterned metal layer, and package applied with the same, and methods of manufacturing of the substrate and package
US8786062B2 (en) * 2009-10-14 2014-07-22 Advanced Semiconductor Engineering, Inc. Semiconductor package and process for fabricating same
US20110084372A1 (en) * 2009-10-14 2011-04-14 Advanced Semiconductor Engineering, Inc. Package carrier, semiconductor package, and process for fabricating same
US8569894B2 (en) 2010-01-13 2013-10-29 Advanced Semiconductor Engineering, Inc. Semiconductor package with single sided substrate design and manufacturing methods thereof
TWI411075B (zh) 2010-03-22 2013-10-01 日月光半導體製造股份有限公司 半導體封裝件及其製造方法
US8753917B2 (en) * 2010-12-14 2014-06-17 International Business Machines Corporation Method of fabricating photoconductor-on-active pixel device
JP2013229455A (ja) * 2012-04-26 2013-11-07 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
KR102890492B1 (ko) * 2020-12-17 2025-11-26 삼성전자주식회사 반도체 소자 및 그의 제조 방법
US12593525B2 (en) * 2021-03-11 2026-03-31 Raytheon Company Offset vertical interconnect and compression post for 3D-integrated electrical device

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Also Published As

Publication number Publication date
KR20040089496A (ko) 2004-10-21
JP5258142B2 (ja) 2013-08-07
GB0615199D0 (en) 2006-09-06
TW200503168A (en) 2005-01-16
GB2427074A (en) 2006-12-13
GB0404852D0 (en) 2004-04-07
JP2004320018A (ja) 2004-11-11
GB2427074B (en) 2007-06-27
JP2012054588A (ja) 2012-03-15
US7566964B2 (en) 2009-07-28
TWI344685B (en) 2011-07-01
GB2401245A (en) 2004-11-03
GB2401245B (en) 2006-12-20
US20040201101A1 (en) 2004-10-14

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