KR101063796B1 - 반도체 소자의 다마신 패턴 형성 방법 - Google Patents
반도체 소자의 다마신 패턴 형성 방법 Download PDFInfo
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- KR101063796B1 KR101063796B1 KR1020040038474A KR20040038474A KR101063796B1 KR 101063796 B1 KR101063796 B1 KR 101063796B1 KR 1020040038474 A KR1020040038474 A KR 1020040038474A KR 20040038474 A KR20040038474 A KR 20040038474A KR 101063796 B1 KR101063796 B1 KR 101063796B1
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- Prior art keywords
- interlayer insulating
- forming
- film
- layer
- diffusion barrier
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- 238000000034 method Methods 0.000 title claims abstract description 51
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 239000011229 interlayer Substances 0.000 claims abstract description 36
- 239000010410 layer Substances 0.000 claims abstract description 32
- 230000004888 barrier function Effects 0.000 claims abstract description 23
- 238000009792 diffusion process Methods 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 17
- 239000001301 oxygen Substances 0.000 claims abstract description 17
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 17
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 229910052757 nitrogen Chemical group 0.000 claims description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 4
- -1 oxygen ions Chemical class 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 14
- 239000010949 copper Substances 0.000 abstract description 14
- 229910052802 copper Inorganic materials 0.000 abstract description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (9)
- 하부 배선이 형성된 반도체 기판 상부에 확산 방지막을 형성하는 단계;상기 확산방지막 위에 층간 절연막을 형성하는 단계;상기 층간 절연막의 소정 영역을 식각하여 상기 확산방지막이 노출되도록 복수의 비아홀을 형성하는 단계;상기 비아홀 사이의 상기 층간 절연막을 식각하여 트렌치를 형성하는 단계;산소 플라즈마를 비등방적으로 작용시켜 상기 층간 절연막 상부 영역을 산화하여 층간 절연막 상부에 산화막을 형성하는 단계; 및상기 산화막 및 확산 방지막을 제거하는 단계를 포함하는 반도체 소자의 다마신 패턴 형성 방법.
- 제 1 항에 있어서, 상기 확산 방지막은 실리콘에 탄소 또는 질소가 결합된 막인 것을 특징으로 하는 반도체 소자의 다마신 패턴 형성 방법.
- 제 1 항에 있어서, 상기 층간 절연막은 OSG(Organo Silicate Glass)막인 것을 특징으로 하는 반도체 소자의 다마신 패턴 형성 방법.
- 제 1 항에 있어서, 상기 층간 절연막의 중간에 식각 정지막을 더 형성하는 반도체 소자의 다마신 패턴 형성 방법.
- 제 4 항에 있어서, 상기 식각 정지막은 실리콘에 탄소 또는 질소가 결합된 막인 것을 특징으로 하는 반도체 소자의 다마신 패턴 형성 방법.
- 제 1 항에 있어서, 상기 산소 플라즈마는 산소 이온의 비등방성 특성을 유지하기 위하여 바이어스 파워 및 자기장을 조절하여 인가하는 반도체 소자의 다마신 패턴 형성 방법.
- 제 1 항에 있어서, 상기 산화막 및 상기 확산 방지막은 불소 함유 습식 식각 용액을 이용하여 제거하는 반도체 소자의 다마신 패턴 형성 방법.
- 제 7 항에 있어서, 상기 습식 식각 용액은 HF 또는 BOE인 것을 특징으로 하는 반도체 소자의 다마신 패턴 형성 방법.
- 제 1 항에 있어서, 상기 트렌치를 형성할 때 상기 비아홀과 상기 트렌치의 경계를 이루는 상기 층간 절연막에 사이드월 펜스의 잔류물이 생성되고, 상기 잔류물은 상기 산화막 제거 공정에 의해 제거되는 것을 특징으로 하는 반도체 소자의 다마신 패턴 형성 방법.
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KR1020040038474A KR101063796B1 (ko) | 2004-05-28 | 2004-05-28 | 반도체 소자의 다마신 패턴 형성 방법 |
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KR1020040038474A KR101063796B1 (ko) | 2004-05-28 | 2004-05-28 | 반도체 소자의 다마신 패턴 형성 방법 |
Publications (2)
Publication Number | Publication Date |
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KR20050112997A KR20050112997A (ko) | 2005-12-01 |
KR101063796B1 true KR101063796B1 (ko) | 2011-09-09 |
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KR1020040038474A KR101063796B1 (ko) | 2004-05-28 | 2004-05-28 | 반도체 소자의 다마신 패턴 형성 방법 |
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KR100703560B1 (ko) * | 2005-12-28 | 2007-04-03 | 동부일렉트로닉스 주식회사 | 반도체 소자의 금속 배선 형성 방법 |
US11961735B2 (en) * | 2021-06-04 | 2024-04-16 | Tokyo Electron Limited | Cyclic plasma processing |
Citations (1)
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WO2002078082A2 (en) | 2001-03-23 | 2002-10-03 | International Business Machines Corporation | Electronic structure |
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WO2002078082A2 (en) | 2001-03-23 | 2002-10-03 | International Business Machines Corporation | Electronic structure |
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