KR101051276B1 - 이중 다마신 배선의 패터닝을 위한 3층 마스킹 구조물 - Google Patents

이중 다마신 배선의 패터닝을 위한 3층 마스킹 구조물 Download PDF

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KR101051276B1
KR101051276B1 KR1020047015692A KR20047015692A KR101051276B1 KR 101051276 B1 KR101051276 B1 KR 101051276B1 KR 1020047015692 A KR1020047015692 A KR 1020047015692A KR 20047015692 A KR20047015692 A KR 20047015692A KR 101051276 B1 KR101051276 B1 KR 101051276B1
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mask layer
layer
dielectric
inorganic
organic
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KR20040099390A (ko
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타운센드폴에이치3세
밀스린케이
배터루스유스트요트엠
스트리트마터리차드제이
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다우 글로벌 테크놀로지스 엘엘씨
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
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    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
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    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6508—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a liquid
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    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/662—Laminate layers, e.g. stacks of alternating high-k metal oxides
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/68—Organic materials, e.g. photoresists
    • H10P14/683—Organic materials, e.g. photoresists carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/73—Etching of wafers, substrates or parts of devices using masks for insulating materials
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    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
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    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/405—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their composition, e.g. multilayer masks
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    • H10W20/071—Manufacture or treatment of dielectric parts thereof
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    • H10W20/071—Manufacture or treatment of dielectric parts thereof
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    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/085—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving intermediate temporary filling with material
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/087—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving multiple stacked pre-patterned masks
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    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/088—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving partial etching of via holes
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    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/46—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts comprising air gaps
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6342—Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/66—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials
    • H10P14/668—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials
    • H10P14/6681—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si
    • H10P14/6684—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H10P14/6686—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the type of materials the materials being characterised by the deposition precursor materials the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/6922—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
KR1020047015692A 2002-04-02 2003-03-28 이중 다마신 배선의 패터닝을 위한 3층 마스킹 구조물 Expired - Fee Related KR101051276B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US36948902P 2002-04-02 2002-04-02
US36949002P 2002-04-02 2002-04-02
US60/369,489 2002-04-02
US60/369,490 2002-04-02
PCT/US2003/009700 WO2003085724A1 (en) 2002-04-02 2003-03-28 Tri-layer masking architecture for patterning dual damascene interconnects

Publications (2)

Publication Number Publication Date
KR20040099390A KR20040099390A (ko) 2004-11-26
KR101051276B1 true KR101051276B1 (ko) 2011-07-22

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Country Status (8)

Country Link
US (1) US6815333B2 (https=)
EP (1) EP1493182B1 (https=)
JP (1) JP4546094B2 (https=)
KR (1) KR101051276B1 (https=)
CN (1) CN100375265C (https=)
AU (1) AU2003222115A1 (https=)
TW (1) TWI335047B (https=)
WO (1) WO2003085724A1 (https=)

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TWI335047B (en) 2010-12-21
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US6815333B2 (en) 2004-11-09
CN100375265C (zh) 2008-03-12
WO2003085724A1 (en) 2003-10-16
JP2005522053A (ja) 2005-07-21
WO2003085724A8 (en) 2004-11-04
EP1493182B1 (en) 2013-01-23
US20030219973A1 (en) 2003-11-27
AU2003222115A1 (en) 2003-10-20
KR20040099390A (ko) 2004-11-26
EP1493182A1 (en) 2005-01-05
CN1647263A (zh) 2005-07-27

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