KR101049582B1 - 인접 메모리 셀들의 프로그래밍 이후 오버 프로그래밍된메모리 셀들 검출 - Google Patents

인접 메모리 셀들의 프로그래밍 이후 오버 프로그래밍된메모리 셀들 검출 Download PDF

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KR101049582B1
KR101049582B1 KR1020067002056A KR20067002056A KR101049582B1 KR 101049582 B1 KR101049582 B1 KR 101049582B1 KR 1020067002056 A KR1020067002056 A KR 1020067002056A KR 20067002056 A KR20067002056 A KR 20067002056A KR 101049582 B1 KR101049582 B1 KR 101049582B1
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state storage
control line
storage element
over
programming
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KR1020067002056A
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Korean (ko)
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KR20060114319A (ko
Inventor
지안 첸
얀 리
제프레이 더블유. 루체
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샌디스크 코포레이션
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Assigned to 샌디스크 테크놀로지스, 인코포레이티드 reassignment 샌디스크 테크놀로지스, 인코포레이티드 권리의 전부이전등록 Assignors: 샌디스크 코포레이션
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells

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  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
KR1020067002056A 2003-07-29 2004-07-07 인접 메모리 셀들의 프로그래밍 이후 오버 프로그래밍된메모리 셀들 검출 Expired - Lifetime KR101049582B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/628,962 2003-07-29
US10/628,962 US6914823B2 (en) 2003-07-29 2003-07-29 Detecting over programmed memory after further programming
PCT/US2004/021699 WO2005013283A1 (en) 2003-07-29 2004-07-07 Detecting over programmed memory cells after programming of adjacent memory cells

Publications (2)

Publication Number Publication Date
KR20060114319A KR20060114319A (ko) 2006-11-06
KR101049582B1 true KR101049582B1 (ko) 2011-07-15

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Country Status (9)

Country Link
US (1) US6914823B2 (https=)
EP (1) EP1652191B1 (https=)
JP (1) JP4680904B2 (https=)
KR (1) KR101049582B1 (https=)
CN (1) CN100474453C (https=)
AT (1) ATE356410T1 (https=)
DE (1) DE602004005211T8 (https=)
TW (1) TWI264012B (https=)
WO (1) WO2005013283A1 (https=)

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US7619920B2 (en) * 2007-07-05 2009-11-17 Kabushiki Kaisha Toshiba NAND type flash memory and write method of the same
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KR101397549B1 (ko) * 2007-08-16 2014-05-26 삼성전자주식회사 고속 프로그램이 가능한 불휘발성 반도체 메모리 시스템 및그것의 독출 방법
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KR101414494B1 (ko) * 2008-03-17 2014-07-04 삼성전자주식회사 메모리 장치 및 메모리 데이터 읽기 방법
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US8422305B2 (en) * 2009-06-29 2013-04-16 Hynix Semiconductor Inc. Method of programming nonvolatile memory device
KR101124126B1 (ko) * 2009-06-29 2012-03-22 주식회사 하이닉스반도체 불휘발성 메모리 소자의 프로그램 방법
US8214700B2 (en) 2009-10-28 2012-07-03 Sandisk Technologies Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8423866B2 (en) * 2009-10-28 2013-04-16 SanDisk Technologies, Inc. Non-volatile memory and method with post-write read and adaptive re-write to manage errors
US8634240B2 (en) * 2009-10-28 2014-01-21 SanDisk Technologies, Inc. Non-volatile memory and method with accelerated post-write read to manage errors
KR101082692B1 (ko) * 2009-12-31 2011-11-15 주식회사 하이닉스반도체 반도체 메모리 장치 및 이의 프로그램 방법
US8432732B2 (en) 2010-07-09 2013-04-30 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays
US8514630B2 (en) 2010-07-09 2013-08-20 Sandisk Technologies Inc. Detection of word-line leakage in memory arrays: current based approach
US8305807B2 (en) 2010-07-09 2012-11-06 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
US8379454B2 (en) 2011-05-05 2013-02-19 Sandisk Technologies Inc. Detection of broken word-lines in memory arrays
KR20130008300A (ko) * 2011-07-12 2013-01-22 삼성전자주식회사 오버 프로그램을 이용하여 소거 동작을 수행하는 플래시 메모리 장치 및 그 동작방법
US9311969B2 (en) 2011-07-22 2016-04-12 Sandisk Technologies Inc. Systems and methods of storing data
US8726104B2 (en) 2011-07-28 2014-05-13 Sandisk Technologies Inc. Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
US20130031431A1 (en) 2011-07-28 2013-01-31 Eran Sharon Post-Write Read in Non-Volatile Memories Using Comparison of Data as Written in Binary and Multi-State Formats
US8750042B2 (en) 2011-07-28 2014-06-10 Sandisk Technologies Inc. Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
US8775901B2 (en) 2011-07-28 2014-07-08 SanDisk Technologies, Inc. Data recovery for defective word lines during programming of non-volatile memory arrays
US8630118B2 (en) 2011-11-09 2014-01-14 Sandisk Technologies Inc. Defective word line detection
US8842476B2 (en) 2011-11-09 2014-09-23 Sandisk Technologies Inc. Erratic program detection for non-volatile storage
US8566671B1 (en) 2012-06-29 2013-10-22 Sandisk Technologies Inc. Configurable accelerated post-write read to manage errors
US9135989B2 (en) 2012-09-06 2015-09-15 Sandisk Technologies Inc. Write data preservation for non-volatile storage
US9053810B2 (en) 2013-03-08 2015-06-09 Sandisk Technologies Inc. Defect or program disturb detection with full data recovery capability
US9213601B2 (en) 2013-12-03 2015-12-15 Sandisk Technologies Inc. Adaptive data re-compaction after post-write read verification operations
KR102356072B1 (ko) * 2015-09-10 2022-01-27 에스케이하이닉스 주식회사 메모리 시스템 및 그 동작 방법
US10249382B2 (en) 2017-08-22 2019-04-02 Sandisk Technologies Llc Determination of fast to program word lines in non-volatile memory
KR102612891B1 (ko) * 2018-05-31 2023-12-13 에스케이하이닉스 주식회사 메모리 장치, 그것의 동작방법 및 메모리 시스템
US10978156B2 (en) 2018-06-29 2021-04-13 Sandisk Technologies Llc Concurrent programming of multiple cells for non-volatile memory devices
US11545221B2 (en) 2018-06-29 2023-01-03 Sandisk Technologies Llc Concurrent programming of multiple cells for non-volatile memory devices
US10839928B1 (en) 2019-05-16 2020-11-17 Sandisk Technologies Llc Non-volatile memory with countermeasure for over programming
US11081198B2 (en) 2019-05-16 2021-08-03 Sandisk Technologies Llc Non-volatile memory with countermeasure for over programming

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Also Published As

Publication number Publication date
DE602004005211T2 (de) 2007-11-08
EP1652191B1 (en) 2007-03-07
CN1853240A (zh) 2006-10-25
JP2007500412A (ja) 2007-01-11
DE602004005211T8 (de) 2008-05-15
EP1652191A1 (en) 2006-05-03
ATE356410T1 (de) 2007-03-15
US20050024943A1 (en) 2005-02-03
JP4680904B2 (ja) 2011-05-11
TW200518104A (en) 2005-06-01
DE602004005211D1 (de) 2007-04-19
WO2005013283A1 (en) 2005-02-10
TWI264012B (en) 2006-10-11
KR20060114319A (ko) 2006-11-06
US6914823B2 (en) 2005-07-05
CN100474453C (zh) 2009-04-01

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