KR101049383B1 - 반도체 장치의 제조 방법 - Google Patents

반도체 장치의 제조 방법 Download PDF

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Publication number
KR101049383B1
KR101049383B1 KR1020090060270A KR20090060270A KR101049383B1 KR 101049383 B1 KR101049383 B1 KR 101049383B1 KR 1020090060270 A KR1020090060270 A KR 1020090060270A KR 20090060270 A KR20090060270 A KR 20090060270A KR 101049383 B1 KR101049383 B1 KR 101049383B1
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KR
South Korea
Prior art keywords
pad region
gas
semiconductor device
wiring layer
cover layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020090060270A
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English (en)
Korean (ko)
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KR20100004879A (ko
Inventor
마사오 구니토우
Original Assignee
르네사스 일렉트로닉스 가부시키가이샤
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Publication date
Application filed by 르네사스 일렉트로닉스 가부시키가이샤 filed Critical 르네사스 일렉트로닉스 가부시키가이샤
Publication of KR20100004879A publication Critical patent/KR20100004879A/ko
Application granted granted Critical
Publication of KR101049383B1 publication Critical patent/KR101049383B1/ko
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/701—Tape-automated bond [TAB] connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/981—Auxiliary members, e.g. spacers
    • H10W72/983—Reinforcing structures, e.g. collars

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)
KR1020090060270A 2008-07-04 2009-07-02 반도체 장치의 제조 방법 Expired - Fee Related KR101049383B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-175720 2008-07-04
JP2008175720A JP2010016233A (ja) 2008-07-04 2008-07-04 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20100004879A KR20100004879A (ko) 2010-01-13
KR101049383B1 true KR101049383B1 (ko) 2011-07-14

Family

ID=41702053

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090060270A Expired - Fee Related KR101049383B1 (ko) 2008-07-04 2009-07-02 반도체 장치의 제조 방법

Country Status (3)

Country Link
JP (1) JP2010016233A (https=)
KR (1) KR101049383B1 (https=)
TW (1) TW201013776A (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015146023A1 (ja) * 2014-03-25 2015-10-01 株式会社Ｊｏｌｅｄ エッチング方法、および、これを用いた有機ｅｌ表示パネルの製造方法
JP2016122801A (ja) * 2014-12-25 2016-07-07 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
TWI794238B (zh) * 2017-07-13 2023-03-01 荷蘭商Ａｓｍ智慧財產控股公司 於單一加工腔室中自半導體膜移除氧化物及碳之裝置及方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070105827A (ko) * 2006-04-27 2007-10-31 주식회사 하이닉스반도체 리페어 퓨즈를 구비한 반도체 소자의 제조 방법
KR100805695B1 (ko) * 2005-08-17 2008-02-21 주식회사 하이닉스반도체 메탈퓨즈를 구비한 반도체소자의 제조 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100805695B1 (ko) * 2005-08-17 2008-02-21 주식회사 하이닉스반도체 메탈퓨즈를 구비한 반도체소자의 제조 방법
KR20070105827A (ko) * 2006-04-27 2007-10-31 주식회사 하이닉스반도체 리페어 퓨즈를 구비한 반도체 소자의 제조 방법

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Publication number Publication date
KR20100004879A (ko) 2010-01-13
JP2010016233A (ja) 2010-01-21
TW201013776A (en) 2010-04-01

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