KR101046043B1 - 노용 다중 구역 히터 - Google Patents

노용 다중 구역 히터 Download PDF

Info

Publication number
KR101046043B1
KR101046043B1 KR1020097001965A KR20097001965A KR101046043B1 KR 101046043 B1 KR101046043 B1 KR 101046043B1 KR 1020097001965 A KR1020097001965 A KR 1020097001965A KR 20097001965 A KR20097001965 A KR 20097001965A KR 101046043 B1 KR101046043 B1 KR 101046043B1
Authority
KR
South Korea
Prior art keywords
heater
semiconductor processing
processing chamber
shell
heating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020097001965A
Other languages
English (en)
Korean (ko)
Other versions
KR20090037899A (ko
Inventor
죠셉 유도브스키
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20090037899A publication Critical patent/KR20090037899A/ko
Application granted granted Critical
Publication of KR101046043B1 publication Critical patent/KR101046043B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • General Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Resistance Heating (AREA)
  • Furnace Details (AREA)
KR1020097001965A 2006-07-12 2007-06-12 노용 다중 구역 히터 Active KR101046043B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/485,547 US7429717B2 (en) 2006-07-12 2006-07-12 Multizone heater for furnace
US11/485,547 2006-07-12
PCT/US2007/070964 WO2008008585A2 (en) 2006-07-12 2007-06-12 Multizone heater for furnace

Publications (2)

Publication Number Publication Date
KR20090037899A KR20090037899A (ko) 2009-04-16
KR101046043B1 true KR101046043B1 (ko) 2011-07-01

Family

ID=38923985

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097001965A Active KR101046043B1 (ko) 2006-07-12 2007-06-12 노용 다중 구역 히터

Country Status (7)

Country Link
US (1) US7429717B2 (https=)
EP (1) EP2054690A2 (https=)
JP (1) JP4912463B2 (https=)
KR (1) KR101046043B1 (https=)
CN (1) CN101490491B (https=)
TW (1) TW200818324A (https=)
WO (1) WO2008008585A2 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012047945A2 (en) 2010-10-05 2012-04-12 Silcotek Corp. Wear resistant coating, article, and method
KR101828528B1 (ko) * 2010-06-28 2018-02-12 한화테크윈 주식회사 그래핀의 제조 장치 및 제조 방법
JP5685844B2 (ja) * 2010-07-16 2015-03-18 株式会社村田製作所 熱処理炉
US20140117005A1 (en) * 2010-10-27 2014-05-01 Tangteck Equipment Inc. Diffusion furnace
CN103806094B (zh) * 2012-11-08 2016-06-08 北京北方微电子基地设备工艺研究中心有限责任公司 外延生长设备
EP3108042B1 (en) * 2014-02-21 2022-08-10 Momentive Performance Materials Quartz, Inc. Multi-zone variable power density heater apparatus
WO2016006500A1 (ja) * 2014-07-07 2016-01-14 株式会社Ihi 熱処理装置
US9915001B2 (en) 2014-09-03 2018-03-13 Silcotek Corp. Chemical vapor deposition process and coated article
US10876206B2 (en) 2015-09-01 2020-12-29 Silcotek Corp. Thermal chemical vapor deposition coating
US11161324B2 (en) 2017-09-13 2021-11-02 Silcotek Corp. Corrosion-resistant coated article and thermal chemical vapor deposition coating process
CN109951906B (zh) * 2017-12-20 2024-05-10 长鑫存储技术有限公司 半导体炉管机台加热器
TWI743446B (zh) 2018-02-20 2021-10-21 美商應用材料股份有限公司 用於原子層沉積(ald)溫度均勻性的熱解氮化硼(pbn)加熱器
US11024523B2 (en) * 2018-09-11 2021-06-01 Asm Ip Holding B.V. Substrate processing apparatus and method
WO2020252306A1 (en) 2019-06-14 2020-12-17 Silcotek Corp. Nano-wire growth
CN110592557B (zh) * 2019-10-21 2020-06-26 山东国晶新材料有限公司 一种内cvd沉积立体式复合陶瓷加热器
US12473635B2 (en) 2020-06-03 2025-11-18 Silcotek Corp. Dielectric article
CN115572172B (zh) * 2022-09-09 2023-06-30 攀钢集团攀枝花钢铁研究院有限公司 废旧石墨电极的利用方法及电炉

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031647A (ja) * 2001-07-19 2003-01-31 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
JP2004055880A (ja) * 2002-07-22 2004-02-19 Hitachi Kokusai Electric Inc 基板処理装置
JP6052722B2 (ja) * 2012-06-29 2016-12-27 パナソニックＩｐマネジメント株式会社 エアーマッサージ装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5414927A (en) 1993-03-30 1995-05-16 Union Oil Co Furnace elements made from graphite sheets
JPH08186081A (ja) * 1994-12-29 1996-07-16 F T L:Kk 半導体装置の製造方法及び半導体装置の製造装置
JPH0940481A (ja) * 1995-07-25 1997-02-10 Shin Etsu Chem Co Ltd セラミックヒーター
US5947718A (en) 1997-03-07 1999-09-07 Semitool, Inc. Semiconductor processing furnace
US6352593B1 (en) * 1997-08-11 2002-03-05 Torrex Equipment Corp. Mini-batch process chamber
JP3515900B2 (ja) * 1998-05-06 2004-04-05 京セラ株式会社 セラミックヒータ
IL125690A0 (en) 1998-08-06 1999-04-11 Reiser Raphael Joshua Furnace for processing semiconductor wafers
US6307184B1 (en) * 1999-07-12 2001-10-23 Fsi International, Inc. Thermal processing chamber for heating and cooling wafer-like objects
US6496648B1 (en) * 1999-08-19 2002-12-17 Prodeo Technologies, Inc. Apparatus and method for rapid thermal processing
JP2001223257A (ja) * 2000-02-10 2001-08-17 Ibiden Co Ltd 半導体製造・検査装置用セラミック基板
JP3833439B2 (ja) 2000-05-02 2006-10-11 株式会社ノリタケカンパニーリミテド 大型基板用多段加熱炉、及び両面加熱式遠赤外線パネルヒーター、並びに該加熱炉内の給排気方法
WO2004049414A1 (ja) 2002-11-25 2004-06-10 Koyo Thermo Systems Co., Ltd. 半導体処理装置用電気ヒータ
CN2714581Y (zh) * 2004-01-13 2005-08-03 南开大学 高真空薄膜沉积室用的外热式高温电加热炉
CN100373119C (zh) * 2004-04-14 2008-03-05 浙江大学 流水线安全型热风送热系统
US20060127067A1 (en) * 2004-12-13 2006-06-15 General Electric Company Fast heating and cooling wafer handling assembly and method of manufacturing thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003031647A (ja) * 2001-07-19 2003-01-31 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
JP2004055880A (ja) * 2002-07-22 2004-02-19 Hitachi Kokusai Electric Inc 基板処理装置
JP6052722B2 (ja) * 2012-06-29 2016-12-27 パナソニックＩｐマネジメント株式会社 エアーマッサージ装置

Also Published As

Publication number Publication date
WO2008008585A3 (en) 2008-07-24
JP2009543996A (ja) 2009-12-10
TW200818324A (en) 2008-04-16
EP2054690A2 (en) 2009-05-06
US7429717B2 (en) 2008-09-30
US20080017628A1 (en) 2008-01-24
WO2008008585A2 (en) 2008-01-17
CN101490491B (zh) 2012-04-25
KR20090037899A (ko) 2009-04-16
CN101490491A (zh) 2009-07-22
JP4912463B2 (ja) 2012-04-11

Similar Documents

Publication Publication Date Title
KR101046043B1 (ko) 노용 다중 구역 히터
KR102911421B1 (ko) 기판 처리 장치용 온도 제어 조립체 및 이를 사용하는 방법
TWI524371B (zh) 具有擴散板和注入器組件的批次處理腔
JP6119060B2 (ja) ガス流分布が改善された熱反応器
EP1182692B1 (en) Heat-processing apparatus and method for semiconductor processing
NL2017558B1 (en) A chemical vapour deposition apparatus and use thereof
KR102749361B1 (ko) 기판 상의 에지 막 두께 균일성을 개선시키기 위한 프로세스 키트
EP1612854A1 (en) Loading table and heat treating apparatus having the loading table
TWI673396B (zh) 大氣磊晶沈積腔室
KR19980018624A (ko) 화학기상증착, 플라즈마강화 화학기상증착 또는 플라즈마 에치 반응기로부터의 배기 가스 처리 방법 및 장치
JP4238772B2 (ja) 載置台構造及び熱処理装置
CN105164788A (zh) 具有空间分布的气体通道的气流控制衬垫
JPH03108323A (ja) ヒータ組立体及び基板の加熱方法
US6007633A (en) Single-substrate-processing apparatus in semiconductor processing system
WO2007047055A2 (en) Reaction chamber with opposing pockets for gas injection and exhaust
CN111954927B (zh) 加热的陶瓷面板
CN119465102A (zh) 晶圆加热器和化学气相沉积系统
US20080197125A1 (en) Substrate heating method and apparatus
US7381926B2 (en) Removable heater
KR20250002447A (ko) 가열식 샤워헤드를 갖는 샤워헤드 조립체
JPH08333681A (ja) 活性ガスを用いた平らなサンプルの表面化学処理装置
KR20070013364A (ko) 화학 기상 증착장치의 히터모듈
KR100848359B1 (ko) 배치식 반응챔버의 히팅시스템
JPH0397222A (ja) 枚葉式ｃｖｄ装置
JP2005093911A (ja) 基板処理装置

Legal Events

Date Code Title Description
A201 Request for examination
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

FPAY Annual fee payment

Payment date: 20140529

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20160330

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20170330

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 14

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 15

U11 Full renewal or maintenance fee paid

Free format text: ST27 STATUS EVENT CODE: A-4-4-U10-U11-OTH-PR1001 (AS PROVIDED BY THE NATIONAL OFFICE)

Year of fee payment: 15

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000