KR101044776B1 - Eeprom 소자의 제조 방법 - Google Patents
Eeprom 소자의 제조 방법 Download PDFInfo
- Publication number
- KR101044776B1 KR101044776B1 KR1020040001295A KR20040001295A KR101044776B1 KR 101044776 B1 KR101044776 B1 KR 101044776B1 KR 1020040001295 A KR1020040001295 A KR 1020040001295A KR 20040001295 A KR20040001295 A KR 20040001295A KR 101044776 B1 KR101044776 B1 KR 101044776B1
- Authority
- KR
- South Korea
- Prior art keywords
- floating gate
- control gate
- film
- polysilicon
- ono
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 15
- 238000004519 manufacturing process Methods 0.000 title description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 19
- 229920005591 polysilicon Polymers 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 9
- 239000010703 silicon Substances 0.000 claims abstract description 9
- 238000000151 deposition Methods 0.000 claims abstract description 7
- 230000014759 maintenance of location Effects 0.000 abstract description 9
- 238000005530 etching Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 9
- 239000002784 hot electron Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/10—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the top-view layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (3)
- 필드 산화막에 의해 활성 영역 및 비활성 영역이 분리된 실리콘 기판에 터널 산화막을 성장시키는 단계;상기 터널 산화막 상에 플로팅 게이트 폴리실리콘을 증착한 후 식각하여 상기 활성 영역에는 제1폭의 제1 플로팅 게이트 전극을 형성하고, 상기 비활성 영역에는 상기 제1폭보다 넓은 제2폭의 제2 플로팅 게이트 전극을 형성하는 단계;상기 제1 및 제2 플로팅 게이트 전극의 노출된 상부면 및 측면을 ONO막으로 모두 둘러싸게 형성하는 단계;상기 ONO막 상에 콘트롤 게이트 폴리실리콘을 증착하는 단계; 및상기 콘트롤 게이트 폴리실리콘을 식각하여 상기 활성 영역에는 상기 제1 플로팅 게이트 전극의 폭에 정렬되는 제1폭의 제1 콘트롤 게이트를 형성하고, 상기 비활성 영역에는 상기 제2폭의 제2 플로팅 게이트 전극을 덮고 있는 ONO막의 상부면 일부를 노출시키는 제1폭의 제2 콘트롤 게이트를 형성하는 단계를 포함하는 것을 특징으로 하는 EEPROM 소자의 제조 방법.
- 제 1항에 있어서, 상기 플로팅 게이트 폴리실리콘은 1000~1500Å 두께로 증착하는 것을 특징으로 하는 EEPROM 소자의 제조 방법.
- 제 1항에 있어서, 상기 콘트롤 게이트 폴리실리콘은 2000~3500Å 두께로 증착하는 것을 특징으로 하는 EEPROM 소자의 제조 방법.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040001295A KR101044776B1 (ko) | 2004-01-08 | 2004-01-08 | Eeprom 소자의 제조 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040001295A KR101044776B1 (ko) | 2004-01-08 | 2004-01-08 | Eeprom 소자의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20050073108A KR20050073108A (ko) | 2005-07-13 |
KR101044776B1 true KR101044776B1 (ko) | 2011-06-27 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020040001295A KR101044776B1 (ko) | 2004-01-08 | 2004-01-08 | Eeprom 소자의 제조 방법 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR101044776B1 (ko) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030059711A (ko) * | 2002-01-04 | 2003-07-10 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조방법 |
-
2004
- 2004-01-08 KR KR1020040001295A patent/KR101044776B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030059711A (ko) * | 2002-01-04 | 2003-07-10 | 삼성전자주식회사 | 비휘발성 메모리 소자 및 그 제조방법 |
Also Published As
Publication number | Publication date |
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KR20050073108A (ko) | 2005-07-13 |
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