KR101030370B1 - 파라미터 결정 방법, 노광 방법, 디바이스 제조 방법 및 기억 매체 - Google Patents

파라미터 결정 방법, 노광 방법, 디바이스 제조 방법 및 기억 매체 Download PDF

Info

Publication number
KR101030370B1
KR101030370B1 KR1020090021308A KR20090021308A KR101030370B1 KR 101030370 B1 KR101030370 B1 KR 101030370B1 KR 1020090021308 A KR1020090021308 A KR 1020090021308A KR 20090021308 A KR20090021308 A KR 20090021308A KR 101030370 B1 KR101030370 B1 KR 101030370B1
Authority
KR
South Korea
Prior art keywords
resist
optical
parameter
simulator
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020090021308A
Other languages
English (en)
Korean (ko)
Other versions
KR20090098720A (ko
Inventor
히로또 요시이
고우이찌로우 쯔지따
고지 미까미
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20090098720A publication Critical patent/KR20090098720A/ko
Application granted granted Critical
Publication of KR101030370B1 publication Critical patent/KR101030370B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020090021308A 2008-03-13 2009-03-12 파라미터 결정 방법, 노광 방법, 디바이스 제조 방법 및 기억 매체 Active KR101030370B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2008-064823 2008-03-13
JP2008064823A JP5178257B2 (ja) 2008-03-13 2008-03-13 パラメータ決定方法、露光方法、デバイス製造方法及びプログラム

Publications (2)

Publication Number Publication Date
KR20090098720A KR20090098720A (ko) 2009-09-17
KR101030370B1 true KR101030370B1 (ko) 2011-04-20

Family

ID=41063404

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020090021308A Active KR101030370B1 (ko) 2008-03-13 2009-03-12 파라미터 결정 방법, 노광 방법, 디바이스 제조 방법 및 기억 매체

Country Status (4)

Country Link
US (1) US7642022B2 (enExample)
JP (1) JP5178257B2 (enExample)
KR (1) KR101030370B1 (enExample)
TW (1) TWI421909B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5224687B2 (ja) * 2006-12-22 2013-07-03 キヤノン株式会社 露光条件算出プログラム及び露光条件算出方法
JP2010107737A (ja) * 2008-10-30 2010-05-13 Toshiba Corp マスク検証方法、半導体装置の製造方法及び露光条件の調整プログラム
JP5539148B2 (ja) * 2010-10-19 2014-07-02 キヤノン株式会社 レジストパターンの算出方法及び算出プログラム
US9064808B2 (en) 2011-07-25 2015-06-23 Synopsys, Inc. Integrated circuit devices having features with reduced edge curvature and methods for manufacturing the same
US8609550B2 (en) * 2011-09-08 2013-12-17 Synopsys, Inc. Methods for manufacturing integrated circuit devices having features with reduced edge curvature
KR20190039579A (ko) * 2016-08-19 2019-04-12 에이에스엠엘 네델란즈 비.브이. 노광후 공정들의 모델링
US11139402B2 (en) 2018-05-14 2021-10-05 Synopsys, Inc. Crystal orientation engineering to achieve consistent nanowire shapes
JP7256287B2 (ja) * 2019-03-25 2023-04-11 エーエスエムエル ネザーランズ ビー．ブイ． パターニングプロセスにおいてパターンを決定するための方法
US11264458B2 (en) 2019-05-20 2022-03-01 Synopsys, Inc. Crystal orientation engineering to achieve consistent nanowire shapes
TW202344928A (zh) * 2022-05-04 2023-11-16 聯華電子股份有限公司 光源參數的匹配方法
CN119165745B (zh) * 2024-11-07 2025-09-30 中国科学院微电子研究所 一种工艺窗口确定方法和相关装置
CN119882359B (zh) * 2025-01-20 2025-11-21 上海积塔半导体有限公司 一种接触孔光刻工艺条件设计方法及半导体结构

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050081180A1 (en) 2003-08-20 2005-04-14 Toshiya Kotani Pattern dimension correction method and verification method using OPC, mask and semiconductor device fabricated by using the correction method, and system and software product for executing the correction method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4102728B2 (ja) * 2002-07-26 2008-06-18 エーエスエムエル マスクツールズ ビー．ブイ． 自動光近接補正（ｏｐｃ）ルール作成
JP2004228228A (ja) * 2003-01-21 2004-08-12 Toshiba Corp 形状シミュレーション方法、形状シミュレーションプログラム及びマスクパターン作成方法
US7043712B2 (en) * 2003-09-09 2006-05-09 International Business Machines Corporation Method for adaptive segment refinement in optical proximity correction
JP2005352365A (ja) * 2004-06-14 2005-12-22 Renesas Technology Corp 半導体デバイスの製造方法、露光用マスクの製造方法および露光用マスク

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050081180A1 (en) 2003-08-20 2005-04-14 Toshiya Kotani Pattern dimension correction method and verification method using OPC, mask and semiconductor device fabricated by using the correction method, and system and software product for executing the correction method

Also Published As

Publication number Publication date
TWI421909B (zh) 2014-01-01
JP2009224409A (ja) 2009-10-01
KR20090098720A (ko) 2009-09-17
US20090233194A1 (en) 2009-09-17
JP5178257B2 (ja) 2013-04-10
US7642022B2 (en) 2010-01-05
TW200952040A (en) 2009-12-16

Similar Documents

Publication Publication Date Title
KR101030370B1 (ko) 파라미터 결정 방법, 노광 방법, 디바이스 제조 방법 및 기억 매체
US11461532B2 (en) Three-dimensional mask model for photolithography simulation
CN101042526B (zh) 掩膜数据的修正方法、光掩膜和光学像的预测方法
KR100958714B1 (ko) 리소그래피 공정의 포커스-노광 모델을 생성하는 시스템 및방법
US8365104B2 (en) Original data producing method and original data producing program
TWI519901B (zh) 用於三維抗蝕分佈模擬之微影模型
JP5514178B2 (ja) 投影光学系による光操作を含むパターン非依存のハイブリッド整合／調整
KR101011732B1 (ko) 산출 방법, 생성 방법, 기억매체, 노광 방법 및 마스크 작성 방법
TWI305299B (en) Method, computer program product, and appararus for generating models for simulating the imaging performance of a plurality of exposure tools
JP5513325B2 (ja) 決定方法、露光方法及びプログラム
Yu et al. True process variation aware optical proximity correction with variational lithography modeling and model calibration
JP2004126486A (ja) パターン寸法補正装置及びパターン寸法補正方法
KR20160062141A (ko) 프로파일 인식 소스-마스크 최적화
US8247141B2 (en) Method of generating reticle data, memory medium storing program for generating reticle data and method of producing reticle
JP5159501B2 (ja) 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイス製造方法
KR101394585B1 (ko) 3ｄ 토포그래픽 웨이퍼들을 위한 리소그래피 모델
JP2004126010A (ja) フォトマスクの設計方法、パターン予測法方法およびプログラム
TW202418147A (zh) 用於判定與半導體製造相關之光罩設計的深度學習模型
Fleming et al. Scanning laser lithography with constrained quadratic exposure optimization
Domnenko et al. The role of mask topography effects in the optimization of pixelated sources
Kim et al. A study of source mask optimization for logic device through experiment and simulations

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 20090312

PA0201 Request for examination
PG1501 Laying open of application
E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20110113

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20110413

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20110413

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20140326

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20140326

Start annual number: 4

End annual number: 4

FPAY Annual fee payment

Payment date: 20160324

Year of fee payment: 6

PR1001 Payment of annual fee

Payment date: 20160324

Start annual number: 6

End annual number: 6

FPAY Annual fee payment

Payment date: 20170324

Year of fee payment: 7

PR1001 Payment of annual fee

Payment date: 20170324

Start annual number: 7

End annual number: 7

FPAY Annual fee payment

Payment date: 20180326

Year of fee payment: 8

PR1001 Payment of annual fee

Payment date: 20180326

Start annual number: 8

End annual number: 8

FPAY Annual fee payment

Payment date: 20190411

Year of fee payment: 9

PR1001 Payment of annual fee

Payment date: 20190411

Start annual number: 9

End annual number: 9

PR1001 Payment of annual fee

Payment date: 20200401

Start annual number: 10

End annual number: 10

PR1001 Payment of annual fee

Payment date: 20210329

Start annual number: 11

End annual number: 11

PR1001 Payment of annual fee

Payment date: 20220324

Start annual number: 12

End annual number: 12

PR1001 Payment of annual fee

Payment date: 20240401

Start annual number: 14

End annual number: 14