JP5178257B2 - パラメータ決定方法、露光方法、デバイス製造方法及びプログラム - Google Patents

パラメータ決定方法、露光方法、デバイス製造方法及びプログラム Download PDF

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Publication number
JP5178257B2
JP5178257B2 JP2008064823A JP2008064823A JP5178257B2 JP 5178257 B2 JP5178257 B2 JP 5178257B2 JP 2008064823 A JP2008064823 A JP 2008064823A JP 2008064823 A JP2008064823 A JP 2008064823A JP 5178257 B2 JP5178257 B2 JP 5178257B2
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JP
Japan
Prior art keywords
optical
simulator
resist
image
parameter
Prior art date
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Expired - Fee Related
Application number
JP2008064823A
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English (en)
Japanese (ja)
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JP2009224409A (ja
JP2009224409A5 (enExample
Inventor
啓人 吉井
好一郎 辻田
晃司 三上
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Canon Inc
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Canon Inc
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Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2008064823A priority Critical patent/JP5178257B2/ja
Priority to US12/401,343 priority patent/US7642022B2/en
Priority to TW098107869A priority patent/TWI421909B/zh
Priority to KR1020090021308A priority patent/KR101030370B1/ko
Publication of JP2009224409A publication Critical patent/JP2009224409A/ja
Publication of JP2009224409A5 publication Critical patent/JP2009224409A5/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/70508—Data handling in all parts of the microlithographic apparatus, e.g. handling pattern data for addressable masks or data transfer to or from different components within the exposure apparatus

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2008064823A 2008-03-13 2008-03-13 パラメータ決定方法、露光方法、デバイス製造方法及びプログラム Expired - Fee Related JP5178257B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2008064823A JP5178257B2 (ja) 2008-03-13 2008-03-13 パラメータ決定方法、露光方法、デバイス製造方法及びプログラム
US12/401,343 US7642022B2 (en) 2008-03-13 2009-03-10 Parameter determination method, exposure method, device fabrication method, and storage medium
TW098107869A TWI421909B (zh) 2008-03-13 2009-03-11 參數決定方法、曝光方法、半導體裝置製造方法、及儲存媒體
KR1020090021308A KR101030370B1 (ko) 2008-03-13 2009-03-12 파라미터 결정 방법, 노광 방법, 디바이스 제조 방법 및 기억 매체

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008064823A JP5178257B2 (ja) 2008-03-13 2008-03-13 パラメータ決定方法、露光方法、デバイス製造方法及びプログラム

Publications (3)

Publication Number Publication Date
JP2009224409A JP2009224409A (ja) 2009-10-01
JP2009224409A5 JP2009224409A5 (enExample) 2011-05-06
JP5178257B2 true JP5178257B2 (ja) 2013-04-10

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JP2008064823A Expired - Fee Related JP5178257B2 (ja) 2008-03-13 2008-03-13 パラメータ決定方法、露光方法、デバイス製造方法及びプログラム

Country Status (4)

Country Link
US (1) US7642022B2 (enExample)
JP (1) JP5178257B2 (enExample)
KR (1) KR101030370B1 (enExample)
TW (1) TWI421909B (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5224687B2 (ja) * 2006-12-22 2013-07-03 キヤノン株式会社 露光条件算出プログラム及び露光条件算出方法
JP2010107737A (ja) * 2008-10-30 2010-05-13 Toshiba Corp マスク検証方法、半導体装置の製造方法及び露光条件の調整プログラム
JP5539148B2 (ja) * 2010-10-19 2014-07-02 キヤノン株式会社 レジストパターンの算出方法及び算出プログラム
US9064808B2 (en) 2011-07-25 2015-06-23 Synopsys, Inc. Integrated circuit devices having features with reduced edge curvature and methods for manufacturing the same
US8609550B2 (en) * 2011-09-08 2013-12-17 Synopsys, Inc. Methods for manufacturing integrated circuit devices having features with reduced edge curvature
KR20190039579A (ko) * 2016-08-19 2019-04-12 에이에스엠엘 네델란즈 비.브이. 노광후 공정들의 모델링
US11139402B2 (en) 2018-05-14 2021-10-05 Synopsys, Inc. Crystal orientation engineering to achieve consistent nanowire shapes
JP7256287B2 (ja) * 2019-03-25 2023-04-11 エーエスエムエル ネザーランズ ビー．ブイ． パターニングプロセスにおいてパターンを決定するための方法
US11264458B2 (en) 2019-05-20 2022-03-01 Synopsys, Inc. Crystal orientation engineering to achieve consistent nanowire shapes
TW202344928A (zh) * 2022-05-04 2023-11-16 聯華電子股份有限公司 光源參數的匹配方法
CN119165745B (zh) * 2024-11-07 2025-09-30 中国科学院微电子研究所 一种工艺窗口确定方法和相关装置
CN119882359B (zh) * 2025-01-20 2025-11-21 上海积塔半导体有限公司 一种接触孔光刻工艺条件设计方法及半导体结构

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4102728B2 (ja) * 2002-07-26 2008-06-18 エーエスエムエル マスクツールズ ビー．ブイ． 自動光近接補正（ｏｐｃ）ルール作成
JP2004228228A (ja) * 2003-01-21 2004-08-12 Toshiba Corp 形状シミュレーション方法、形状シミュレーションプログラム及びマスクパターン作成方法
JP4068531B2 (ja) * 2003-08-20 2008-03-26 株式会社東芝 Ｏｐｃを用いたパターン寸法の補正方法及び検証方法、マスクの作成方法及び半導体装置の製造方法、並びに該補正方法を実行するシステム及びプログラム
US7043712B2 (en) * 2003-09-09 2006-05-09 International Business Machines Corporation Method for adaptive segment refinement in optical proximity correction
JP2005352365A (ja) * 2004-06-14 2005-12-22 Renesas Technology Corp 半導体デバイスの製造方法、露光用マスクの製造方法および露光用マスク

Also Published As

Publication number Publication date
TWI421909B (zh) 2014-01-01
JP2009224409A (ja) 2009-10-01
KR20090098720A (ko) 2009-09-17
US20090233194A1 (en) 2009-09-17
KR101030370B1 (ko) 2011-04-20
US7642022B2 (en) 2010-01-05
TW200952040A (en) 2009-12-16

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