KR101016657B1 - 탄탈 소결체 및 이 소결체를 사용한 콘덴서 - Google Patents
탄탈 소결체 및 이 소결체를 사용한 콘덴서 Download PDFInfo
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- KR101016657B1 KR101016657B1 KR1020037009369A KR20037009369A KR101016657B1 KR 101016657 B1 KR101016657 B1 KR 101016657B1 KR 1020037009369 A KR1020037009369 A KR 1020037009369A KR 20037009369 A KR20037009369 A KR 20037009369A KR 101016657 B1 KR101016657 B1 KR 101016657B1
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- Prior art keywords
- tantalum
- sintered compact
- capacitor
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- 239000003990 capacitor Substances 0.000 title claims abstract description 49
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title claims description 54
- 229910052715 tantalum Inorganic materials 0.000 title claims description 40
- 239000011148 porous material Substances 0.000 claims abstract description 14
- 238000009826 distribution Methods 0.000 claims abstract description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 229920006395 saturated elastomer Polymers 0.000 claims description 12
- 125000004432 carbon atom Chemical group C* 0.000 claims description 11
- 229920001940 conductive polymer Polymers 0.000 claims description 11
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 125000004122 cyclic group Chemical group 0.000 claims description 9
- 229920000642 polymer Polymers 0.000 claims description 9
- 125000001424 substituent group Chemical group 0.000 claims description 9
- 125000004417 unsaturated alkyl group Chemical group 0.000 claims description 9
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 7
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 7
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 6
- 229930195734 saturated hydrocarbon Natural products 0.000 claims description 6
- 229920000128 polypyrrole Polymers 0.000 claims description 5
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 4
- 229920000123 polythiophene Polymers 0.000 claims description 4
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 claims description 3
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 3
- 125000003545 alkoxy group Chemical group 0.000 claims description 3
- 125000005907 alkyl ester group Chemical group 0.000 claims description 3
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 150000001408 amides Chemical class 0.000 claims description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 3
- 125000004093 cyano group Chemical group *C#N 0.000 claims description 3
- 150000002148 esters Chemical class 0.000 claims description 3
- 125000005843 halogen group Chemical group 0.000 claims description 3
- 125000001183 hydrocarbyl group Chemical group 0.000 claims description 3
- 125000001841 imino group Chemical group [H]N=* 0.000 claims description 3
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 3
- 125000000843 phenylene group Chemical group C1(=C(C=CC=C1)*)* 0.000 claims description 3
- 125000000475 sulfinyl group Chemical group [*:2]S([*:1])=O 0.000 claims description 3
- 125000000472 sulfonyl group Chemical group *S(*)(=O)=O 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 125000004434 sulfur atom Chemical group 0.000 claims description 3
- 125000001302 tertiary amino group Chemical group 0.000 claims description 3
- 229930195735 unsaturated hydrocarbon Natural products 0.000 claims description 3
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 239000000843 powder Substances 0.000 description 28
- 230000000052 comparative effect Effects 0.000 description 13
- 238000005121 nitriding Methods 0.000 description 13
- 239000002245 particle Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 12
- 238000000034 method Methods 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 8
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- YADSGOSSYOOKMP-UHFFFAOYSA-N dioxolead Chemical compound O=[Pb]=O YADSGOSSYOOKMP-UHFFFAOYSA-N 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 150000004767 nitrides Chemical class 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000008151 electrolyte solution Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052759 nickel Inorganic materials 0.000 description 4
- 239000011164 primary particle Substances 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 3
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000005470 impregnation Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229910052700 potassium Inorganic materials 0.000 description 3
- 239000011591 potassium Substances 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000011734 sodium Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- -1 tantalum halides Chemical class 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- PYLYNBWPKVWXJC-UHFFFAOYSA-N [Nb].[Pb] Chemical compound [Nb].[Pb] PYLYNBWPKVWXJC-UHFFFAOYSA-N 0.000 description 2
- ROSDCCJGGBNDNL-UHFFFAOYSA-N [Ta].[Pb] Chemical compound [Ta].[Pb] ROSDCCJGGBNDNL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000011247 coating layer Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical compound C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 description 1
- YMUICPQENGUHJM-UHFFFAOYSA-N 2-methylpropyl(tripropyl)azanium Chemical compound CCC[N+](CCC)(CCC)CC(C)C YMUICPQENGUHJM-UHFFFAOYSA-N 0.000 description 1
- JAJIPIAHCFBEPI-UHFFFAOYSA-N 9,10-dioxoanthracene-1-sulfonic acid Chemical compound O=C1C2=CC=CC=C2C(=O)C2=C1C=CC=C2S(=O)(=O)O JAJIPIAHCFBEPI-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical group [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 241000723346 Cinnamomum camphora Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- SIKJAQJRHWYJAI-UHFFFAOYSA-N Indole Chemical compound C1=CC=C2NC=CC2=C1 SIKJAQJRHWYJAI-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- NIPNSKYNPDTRPC-UHFFFAOYSA-N N-[2-oxo-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethyl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(CNC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 NIPNSKYNPDTRPC-UHFFFAOYSA-N 0.000 description 1
- 239000004734 Polyphenylene sulfide Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229960000846 camphor Drugs 0.000 description 1
- 229930008380 camphor Natural products 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- AIRJNECCGRYSCS-UHFFFAOYSA-N ethane-1,2-diol;4-methyl-1,3-dioxolan-2-one Chemical compound OCCO.CC1COC(=O)O1 AIRJNECCGRYSCS-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229940046892 lead acetate Drugs 0.000 description 1
- PIJPYDMVFNTHIP-UHFFFAOYSA-L lead sulfate Chemical compound [PbH4+2].[O-]S([O-])(=O)=O PIJPYDMVFNTHIP-UHFFFAOYSA-L 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- IFSIGZHEDOYNJM-UHFFFAOYSA-N n,n-dimethylformamide;ethane-1,2-diol Chemical compound OCCO.CN(C)C=O IFSIGZHEDOYNJM-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229940110728 nitrogen / oxygen Drugs 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000414 polyfuran Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920000069 polyphenylene sulfide Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 238000000790 scattering method Methods 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 150000003482 tantalum compounds Chemical class 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/042—Electrodes or formation of dielectric layers thereon characterised by the material
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Powder Metallurgy (AREA)
Abstract
Description
실시예 및 비교예 |
성형하중, N | 구멍분포 | ||
피크 1의 구멍지름, ㎛ |
피크 2의 구멍지름, ㎛ |
상대강도가 큰 피크 |
||
실시예 1 | 392 | 0.67 | 1 | 2 |
실시예 2 | 686 | 0.4 | 1.4 | 2 |
실시예 3 | 981 | 0.27 | 0.78 | 2 |
실시예 4 | 490 | 0.35 | 2.2 | 2 |
실시예 5 | 785 | 0.49 | 0.95 | 2 |
실시예 6 | 294 | 0.61 | 2.8 | 2 |
실시예 7 | 392 | 0.52 | 2.2 | 2 |
실시예 8 | 686 | 0.44 | 2.8 | 2 |
실시예 9 | 981 | 0.35 | 1.2 | 1 |
비교예 1 | 490 | 0.62 | 없음 | - |
비교예 2 | 686 | 0.55 | 없음 | - |
비교예 3 | 392 | 0.82 | 없음 | - |
방법 | 캐소드제 | 캐소드제 함침법 |
A | 폴리피롤 | 과황산암모늄 및 안트라퀴논술폰산이 부착된 소결체를 피롤증기와 기상중합시키는 것을 반복함 |
B | 이산화납과 황산납의 혼합물 (이산화납:98질량%) |
아세트산납과 과황산암모늄의 혼합액에 소결체를 침지시키는 것을 반복함. |
캐소드제 함침법 |
용량출현율, % |
내습치 | ||
용량 100~110%의 유니트수 |
용량 110~120%의 유니트수 | |||
실시예 1 | A | 82 | 30/30 | 0/30 |
B | 88 | 30/30 | 0/30 | |
실시예 2 | A | 85 | 30/30 | 0/30 |
B | 87 | 30/30 | 0/30 | |
실시예 3 | A | 79 | 27/30 | 3/30 |
실시예 4 | A | 84 | 30/30 | 0/30 |
실시예 5 | A | 80 | 30/30 | 0/30 |
실시예 6 | A | 82 | 30/30 | 0/30 |
실시예 7 | A | 85 | 30/30 | 0/30 |
실시예 8 | A | 81 | 30/30 | 0/30 |
실시예 9 | A | 82 | 30/30 | 0/30 |
비교예 1 | A | 71 | 16/30 | 14/30 |
비교예 2 | A | 69 | 11/30 | 19/30 |
비교예 3 | A | 73 | 17/30 | 13/30 |
Claims (14)
- 복수의 피크를 갖는 구멍지름분포로 이루어진 것을 특징으로 하는 탄탈 소결체에 있어서, 상기 복수의 피크 중에서, 가장 큰 상대강도와 두 번째로 큰 상대강도를 갖는 두 개의 피크가 0.2~0.7㎛의 구멍지름과 0.7~3㎛의 구멍지름을 갖는 것을 특징으로 하는 탄탈 소결체.
- 삭제
- 제1항에 있어서, 상기 복수의 피크 중에서, 상대강도가 가장 큰 피크의 구멍지름이 0.7~3㎛인 것을 특징으로 하는 탄탈 소결체.
- 제1항 또는 제3항에 있어서, 상기 소결체의 부피는 공극의 부피를 포함하여 10㎣ 이상인 것을 특징으로 하는 탄탈 소결체.
- 제1항 또는 제3항에 있어서, 상기 소결체의 비표면적은 0.2~7㎡/g인 것을 특징으로 하는 탄탈 소결체.
- 제1항 또는 제3항에 있어서, 상기 소결체의 일부는 질화되어 있는 것을 특징으로 하는 탄탈 소결체.
- 제1항 또는 제3항에 있어서, 상기 소결체는 1,300℃에서 소결시 40,000~200,000㎌V/g의 CV값을 갖는 소결체를 제공하는 탄탈 분말 콤팩트로부터 얻어진 것임을 특징으로 하는 탄탈 소결체.
- 제1항 또는 제3항에 기재된 소결체로 이루어진 전극, 이 소결체의 표면 상에 형성되는 유전체 및 이 유전체에 구비되는 상대전극으로 이루어진 것을 특징으로 하는 콘덴서.
- 제8항에 있어서, 상기 유전체의 주성분은 산화탄탈인 것을 특징으로 하는 콘덴서.
- 제9항에 있어서, 상기 산화탄탈은 전해산화에 의해 형성되는 것을 특징으로 하는 콘덴서.
- 제8항에 있어서, 상기 상대전극은 하기 일반식(1) 또는 (2)로 표시되는 반복단위를 함유하는 고분자에 도펀트를 도핑함으로써 얻어진 전기전도성 고분자인 것을 특징으로 하는 콘덴서.(식중, R1~R4는 각각 독립적으로 수소원자, 탄소수 1~10의 직쇄상 또는 분기상의 포화 또는 불포화 알킬기, 알콕시기 또는 알킬에스테르기, 할로겐원자, 니트로기, 시아노기, 1급, 2급 또는 3급 아미노기, CF3기, 페닐기 및 치환 페닐기로 이루어진 군에서 선택되는 1가기를 나타내고; R1과 R2 또는 R3과 R4의 탄화수소쇄가 임의의 위치에서 서로 결합하여, R1과 R2 또는 R3와 R4로 치환된 탄소원자와 함께 1개 이상의 3-, 4-, 5-, 6- 또는 7원환의 포화 또는 불포화 탄화수소의 환상구조를 형성하는 2가쇄를 형성해도 좋고; 상기 환상 결합쇄는 카보닐, 에테르, 에스테르, 아미드, 술피드, 술피닐, 술포닐 또는 이미노의 결합을 임의의 위치에 함유해도 좋고; X는 산소원자, 황원자 또는 질소원자를 나타내고; R5는 X가 질소원자일 경우에만 존재하고, 독립적으로 수소원자 또는 탄소수 1~10의 직쇄상 또는 분기상의 포화 또는 불포화 알킬기를 나타낸다)
- 제11항에 있어서, 상기 고분자는 폴리피롤, 폴리티오펜 및 그 치환유도체로 이루어진 군에서 선택되는 1종 이상인 것을 특징으로 하는 콘덴서.
- 제12항에 있어서, 상기 고분자는 하기 일반식(3)으로 표시되는 반복단위를 함유하는 전기전도성 고분자인 것을 특징으로 하는 콘덴서.(식중, R6 및 R7은 각각 독립적으로 수소원자, 탄소수 1~6의 직쇄상 또는 분기상의 포화 또는 불포화 알킬기, 또는 알킬기가 임의의 위치에서 서로 결합할 경우, 2개의 산소원소를 함유하는 1개 이상의 5-, 6- 또는 7원환의 포화 탄화수소 환상구조를 형성하는 치환기를 나타내고; 상기 환상구조는 치환기를 갖고 있어도 좋은 비닐렌결합을 가진 구조 및 치환기를 갖고 있어도 좋은 페닐렌구조가 열거된다)
- 제13항에 있어서, 상기 전기전도성 고분자는 폴리(3,4-에틸렌디옥시티오펜)에 도펀트를 도핑함으로써 얻어진 전기전도성 고분자인 것을 특징으로 하는 콘덴서.
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JPJP-P-2001-00305278 | 2001-10-01 | ||
JP2001305278 | 2001-10-01 | ||
US32673601P | 2001-10-04 | 2001-10-04 | |
US60/326,736 | 2001-10-04 | ||
PCT/JP2002/010151 WO2003032342A1 (en) | 2001-10-01 | 2002-09-30 | Tantalum sintered body and capacitor using the sintered body |
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KR1020097019333A KR101016658B1 (ko) | 2001-10-01 | 2002-09-30 | 탄탈 소결체의 제조방법 및 콘덴서의 제조방법 |
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EP (1) | EP1433187A4 (ko) |
JP (2) | JP4396970B2 (ko) |
KR (2) | KR101016657B1 (ko) |
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US10290429B2 (en) | 2017-01-17 | 2019-05-14 | Kemet Electronics Corporation | Wire to anode connection |
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JP3718412B2 (ja) * | 2000-06-01 | 2005-11-24 | キャボットスーパーメタル株式会社 | ニオブまたはタンタル粉末およびその製造方法 |
CN1883021B (zh) * | 2003-11-13 | 2011-04-06 | 昭和电工株式会社 | 固体电解电容器 |
DE602005011773D1 (de) * | 2004-04-15 | 2009-01-29 | Jfe Mineral Co Ltd | Tantalpulver und dieses verwendender festelektrolytkondensator |
US20080106853A1 (en) * | 2004-09-30 | 2008-05-08 | Wataru Suenaga | Process for Producing Porous Sintered Metal |
CN100339172C (zh) * | 2005-09-29 | 2007-09-26 | 宁夏东方钽业股份有限公司 | 球化造粒凝聚金属粉末的方法,金属粉末和电解电容器阳极 |
KR102304220B1 (ko) * | 2019-01-14 | 2021-09-24 | (주)엠티아이지 | 탄탈륨 소결체 제조 방법 |
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- 2002-09-30 KR KR1020037009369A patent/KR101016657B1/ko active IP Right Grant
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US10290429B2 (en) | 2017-01-17 | 2019-05-14 | Kemet Electronics Corporation | Wire to anode connection |
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KR20040034593A (ko) | 2004-04-28 |
WO2003032342A1 (en) | 2003-04-17 |
CN1484842A (zh) | 2004-03-24 |
EP1433187A4 (en) | 2007-10-24 |
JP4396970B2 (ja) | 2010-01-13 |
WO2003032343A1 (en) | 2003-04-17 |
US20040052013A1 (en) | 2004-03-18 |
JP2009239312A (ja) | 2009-10-15 |
CN100468586C (zh) | 2009-03-11 |
JP4809463B2 (ja) | 2011-11-09 |
EP1433187A1 (en) | 2004-06-30 |
KR101016658B1 (ko) | 2011-02-25 |
JP2005505933A (ja) | 2005-02-24 |
KR20090104144A (ko) | 2009-10-05 |
US7361202B2 (en) | 2008-04-22 |
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