KR101011858B1 - 플라즈마 처리 장치, 전극 온도 조정 장치, 전극 온도 조정방법 - Google Patents

플라즈마 처리 장치, 전극 온도 조정 장치, 전극 온도 조정방법 Download PDF

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KR101011858B1
KR101011858B1 KR1020080049137A KR20080049137A KR101011858B1 KR 101011858 B1 KR101011858 B1 KR 101011858B1 KR 1020080049137 A KR1020080049137 A KR 1020080049137A KR 20080049137 A KR20080049137 A KR 20080049137A KR 101011858 B1 KR101011858 B1 KR 101011858B1
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electrode
temperature
high frequency
frequency power
upper electrode
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KR20080107261A (ko
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마사오 후루야
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00—Vacuum tubes
    • H01J21/02—Tubes with a single discharge path
    • H01J21/18—Tubes with a single discharge path having magnetic control means; having both magnetic and electrostatic control means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Automation & Control Theory (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020080049137A 2007-06-05 2008-05-27 플라즈마 처리 장치, 전극 온도 조정 장치, 전극 온도 조정방법 Active KR101011858B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007149585A JP4838197B2 (ja) 2007-06-05 2007-06-05 プラズマ処理装置，電極温度調整装置，電極温度調整方法
JPJP-P-2007-00149585 2007-06-05

Publications (2)

Publication Number Publication Date
KR20080107261A KR20080107261A (ko) 2008-12-10
KR101011858B1 true KR101011858B1 (ko) 2011-01-31

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Country Status (5)

Country Link
US (1) US8864932B2 (https=)
JP (1) JP4838197B2 (https=)
KR (1) KR101011858B1 (https=)
CN (1) CN101320675B (https=)
TW (1) TWI427668B (https=)

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US8889021B2 (en) * 2010-01-21 2014-11-18 Kla-Tencor Corporation Process condition sensing device and method for plasma chamber
US8916793B2 (en) 2010-06-08 2014-12-23 Applied Materials, Inc. Temperature control in plasma processing apparatus using pulsed heat transfer fluid flow
US9338871B2 (en) * 2010-01-29 2016-05-10 Applied Materials, Inc. Feedforward temperature control for plasma processing apparatus
US8880227B2 (en) * 2010-05-27 2014-11-04 Applied Materials, Inc. Component temperature control by coolant flow control and heater duty cycle control
US8591755B2 (en) * 2010-09-15 2013-11-26 Lam Research Corporation Methods for controlling plasma constituent flux and deposition during semiconductor fabrication and apparatus for implementing the same
CN102127757A (zh) * 2011-01-14 2011-07-20 映瑞光电科技(上海)有限公司 Mocvd反应系统
JP5712741B2 (ja) * 2011-03-31 2015-05-07 東京エレクトロン株式会社 プラズマ処理装置、プラズマ処理方法及び記憶媒体
GB2489761B (en) * 2011-09-07 2015-03-04 Europlasma Nv Surface coatings
US10274270B2 (en) 2011-10-27 2019-04-30 Applied Materials, Inc. Dual zone common catch heat exchanger/chiller
CN102592986B (zh) * 2012-03-09 2017-03-15 上海集成电路研发中心有限公司 通孔形成方法
JP2014005494A (ja) * 2012-06-22 2014-01-16 Ulvac Japan Ltd プラズマ処理装置
KR101227153B1 (ko) * 2012-09-05 2013-01-31 (주)테키스트 열전소자를 이용한 반도체 제조 설비의 광역 온도제어시스템
US9916967B2 (en) * 2013-03-13 2018-03-13 Applied Materials, Inc. Fast response fluid control system
CN103617941B (zh) * 2013-11-14 2016-05-25 中国科学院等离子体物理研究所 一种强流离子源电极的液态金属两级冷却方法
JP6219227B2 (ja) * 2014-05-12 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構及びステージの温度制御方法
JP6219229B2 (ja) * 2014-05-19 2017-10-25 東京エレクトロン株式会社 ヒータ給電機構
JP6525751B2 (ja) * 2015-06-11 2019-06-05 東京エレクトロン株式会社 温度制御方法及びプラズマ処理装置
CN105097408B (zh) * 2015-07-21 2017-09-26 深圳市华星光电技术有限公司 一种干法刻蚀机台及其使用方法
CN106803475B (zh) * 2015-11-26 2019-01-22 中芯国际集成电路制造(上海)有限公司 一种等离子体处理装置
CN105513958A (zh) * 2015-12-25 2016-04-20 武汉华星光电技术有限公司 一种蚀刻设备及反应槽装置
JP2018063974A (ja) * 2016-10-11 2018-04-19 東京エレクトロン株式会社 温度制御装置、温度制御方法、および載置台
KR102587615B1 (ko) * 2016-12-21 2023-10-11 삼성전자주식회사 플라즈마 처리 장치의 온도 조절기 및 이를 포함하는 플라즈마 처리 장치
JP6803815B2 (ja) * 2017-07-25 2020-12-23 東京エレクトロン株式会社 基板処理装置、及び、基板処理装置の運用方法
JP6920245B2 (ja) * 2018-04-23 2021-08-18 東京エレクトロン株式会社 温度制御方法
JP7094154B2 (ja) * 2018-06-13 2022-07-01 東京エレクトロン株式会社 成膜装置および成膜方法
DE102018209730A1 (de) * 2018-06-15 2019-12-19 Terraplasma Gmbh Verfahren zum Prüfen einer Elektrodenanordnung zur Erzeugung eines nicht-thermischen Plasmas und Plasmaquelle mit einer solchen Elektrodenanordnung, eingerichtet zur Durchführung eines solchen Verfahrens
US12015131B2 (en) * 2018-07-06 2024-06-18 Carrier Corporation Electrochemical heat transfer system
CN110139458A (zh) * 2019-04-02 2019-08-16 珠海宝丰堂电子科技有限公司 一种等离子设备的电极装置及等离子设备
JP6624623B1 (ja) * 2019-06-26 2019-12-25 伸和コントロールズ株式会社 温度制御装置及び温調装置
KR102902526B1 (ko) * 2019-07-26 2025-12-19 주성엔지니어링(주) 기판처리장치 및 그의 인터락 방법
US12170188B2 (en) * 2019-07-26 2024-12-17 Jusung Engineering Co., Ltd. Substrate processing apparatus and interlock method thereof
CN112786422B (zh) * 2019-11-08 2024-03-12 中微半导体设备(上海)股份有限公司 一种聚焦环、等离子体处理器及方法
CN113745082B (zh) * 2020-05-28 2023-10-31 中微半导体设备(上海)股份有限公司 等离子体处理装置及其加热装置与工作方法
CN114150294A (zh) * 2020-09-08 2022-03-08 吕宝源 固态金属有机源的集中供给系统
CN114792618B (zh) * 2022-04-22 2025-05-02 合肥京东方显示技术有限公司 等离子体设备的下电极结构和等离子体设备

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JPH03102820A (ja) * 1989-09-18 1991-04-30 Tokuda Seisakusho Ltd 真空処理装置
JPH07335570A (ja) * 1994-06-06 1995-12-22 Anelva Corp プラズマ処理における基板温度制御方法
JP2006270017A (ja) 2004-06-21 2006-10-05 Tokyo Electron Ltd プラズマエッチング装置およびプラズマエッチング方法、ならびにコンピュータ読み取り可能な記憶媒体
JP2006269944A (ja) 2005-03-25 2006-10-05 Tokyo Electron Ltd 温度調整方法，温度調整装置，プラズマ処理装置

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JPH03102820A (ja) * 1989-09-18 1991-04-30 Tokuda Seisakusho Ltd 真空処理装置
JPH07335570A (ja) * 1994-06-06 1995-12-22 Anelva Corp プラズマ処理における基板温度制御方法
JP2006270017A (ja) 2004-06-21 2006-10-05 Tokyo Electron Ltd プラズマエッチング装置およびプラズマエッチング方法、ならびにコンピュータ読み取り可能な記憶媒体
JP2006269944A (ja) 2005-03-25 2006-10-05 Tokyo Electron Ltd 温度調整方法，温度調整装置，プラズマ処理装置

Also Published As

Publication number Publication date
TWI427668B (zh) 2014-02-21
CN101320675A (zh) 2008-12-10
JP2008305856A (ja) 2008-12-18
US8864932B2 (en) 2014-10-21
CN101320675B (zh) 2010-09-01
JP4838197B2 (ja) 2011-12-14
KR20080107261A (ko) 2008-12-10
TW200912989A (en) 2009-03-16
US20090044752A1 (en) 2009-02-19

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