KR101008746B1 - 플라즈마 처리 장치 및 플라즈마 처리 방법 - Google Patents

플라즈마 처리 장치 및 플라즈마 처리 방법 Download PDF

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Publication number
KR101008746B1
KR101008746B1 KR1020087005903A KR20087005903A KR101008746B1 KR 101008746 B1 KR101008746 B1 KR 101008746B1 KR 1020087005903 A KR1020087005903 A KR 1020087005903A KR 20087005903 A KR20087005903 A KR 20087005903A KR 101008746 B1 KR101008746 B1 KR 101008746B1
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KR
South Korea
Prior art keywords
microwaves
microwave
antenna member
ceiling plate
planar antenna
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KR1020087005903A
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English (en)
Korean (ko)
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KR20080037077A (ko
Inventor
차이종 티안
도시히사 노자와
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20080037077A publication Critical patent/KR20080037077A/ko
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Publication of KR101008746B1 publication Critical patent/KR101008746B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/32229—Waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32311—Circuits specially adapted for controlling the microwave discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32825—Working under atmospheric pressure or higher
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4622—Microwave discharges using waveguides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/463—Microwave discharges using antennas or applicators

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020087005903A 2006-02-09 2007-02-09 플라즈마 처리 장치 및 플라즈마 처리 방법 KR101008746B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006033023A JP4677918B2 (ja) 2006-02-09 2006-02-09 プラズマ処理装置及びプラズマ処理方法
JPJP-P-2006-00033023 2006-02-09

Publications (2)

Publication Number Publication Date
KR20080037077A KR20080037077A (ko) 2008-04-29
KR101008746B1 true KR101008746B1 (ko) 2011-01-14

Family

ID=38345264

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087005903A KR101008746B1 (ko) 2006-02-09 2007-02-09 플라즈마 처리 장치 및 플라즈마 처리 방법

Country Status (5)

Country Link
JP (1) JP4677918B2 (zh)
KR (1) KR101008746B1 (zh)
CN (1) CN101347051B (zh)
TW (1) TW200810613A (zh)
WO (1) WO2007091672A1 (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101781290B1 (ko) 2016-02-29 2017-09-22 부산대학교 산학협력단 대면적 표면파 플라즈마 장치 및 이를 이용하여 전기전도성 다이아몬드 코팅방법
US10553401B2 (en) 2016-05-16 2020-02-04 Samsung Electronics Co., Ltd. Antenna, microwave plasma source including the same, plasma processing apparatus, and method of manufacturing semiconductor device

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5066502B2 (ja) * 2007-09-28 2012-11-07 東京エレクトロン株式会社 プラズマ処理装置
CN101803472B (zh) * 2007-09-28 2012-07-18 东京毅力科创株式会社 等离子体处理装置
CN102090153A (zh) * 2008-01-31 2011-06-08 东京毅力科创株式会社 微波等离子体处理装置
JP2010232493A (ja) * 2009-03-27 2010-10-14 Tokyo Electron Ltd プラズマ処理装置
JP5479013B2 (ja) * 2009-09-30 2014-04-23 東京エレクトロン株式会社 プラズマ処理装置及びこれに用いる遅波板
JP5710209B2 (ja) 2010-01-18 2015-04-30 東京エレクトロン株式会社 電磁波給電機構およびマイクロ波導入機構
JP2015018685A (ja) * 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置
JP2015018684A (ja) 2013-07-10 2015-01-29 東京エレクトロン株式会社 マイクロ波プラズマ処理装置、スロットアンテナ及び半導体装置
JP6178140B2 (ja) 2013-07-10 2017-08-09 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及びマイクロ波供給方法
JP2015079677A (ja) 2013-10-17 2015-04-23 東京エレクトロン株式会社 マイクロ波プラズマ処理装置及びマイクロ波供給方法
EP3240363B1 (en) * 2014-12-22 2020-08-26 Panasonic Intellectual Property Management Co., Ltd. Microwave heating device
TWI739335B (zh) * 2015-05-12 2021-09-11 日商東京威力科創股份有限公司 電漿處理裝置及電漿處理方法
JP6697292B2 (ja) * 2016-03-14 2020-05-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP6527482B2 (ja) * 2016-03-14 2019-06-05 東芝デバイス＆ストレージ株式会社 半導体製造装置
CN109145327B (zh) * 2017-06-27 2021-10-29 大唐移动通信设备有限公司 一种微带天线的开槽设置方法及装置
WO2021152655A1 (ja) * 2020-01-27 2021-08-05 株式会社日立ハイテク プラズマ処理装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990014798A (ko) * 1996-03-28 1999-02-25 고지마마타오 플라즈마 처리장치 및 플라즈마 처리방법
JP2005033100A (ja) * 2003-07-10 2005-02-03 Shimadzu Corp 表面波励起プラズマ処理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0319332A (ja) * 1989-06-16 1991-01-28 Hitachi Ltd マイクロ波プラズマ処理装置
JP3053105B2 (ja) * 1989-06-30 2000-06-19 株式会社日立製作所 プラズマｃｖｄ装置及びその方法
JPH07135093A (ja) * 1993-11-08 1995-05-23 Matsushita Electric Ind Co Ltd プラズマ処理装置及び処理方法
JP3957135B2 (ja) * 2000-10-13 2007-08-15 東京エレクトロン株式会社 プラズマ処理装置
JP4141764B2 (ja) * 2002-08-20 2008-08-27 東京エレクトロン株式会社 プラズマ処理装置
JP2004165551A (ja) * 2002-11-15 2004-06-10 Sharp Corp プラズマ処理装置
KR20050079860A (ko) * 2004-02-07 2005-08-11 삼성전자주식회사 마이크로 웨이브 공급장치, 이를 이용한 플라즈마공정장치 및 플라즈마 공정방법
JP2006040609A (ja) * 2004-07-23 2006-02-09 Naohisa Goto プラズマ処理装置および方法、並びにフラットパネルディスプレイ装置の製造方法
JP2006216903A (ja) * 2005-02-07 2006-08-17 Hitachi High-Technologies Corp プラズマ処理装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR19990014798A (ko) * 1996-03-28 1999-02-25 고지마마타오 플라즈마 처리장치 및 플라즈마 처리방법
JP2005033100A (ja) * 2003-07-10 2005-02-03 Shimadzu Corp 表面波励起プラズマ処理装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101781290B1 (ko) 2016-02-29 2017-09-22 부산대학교 산학협력단 대면적 표면파 플라즈마 장치 및 이를 이용하여 전기전도성 다이아몬드 코팅방법
US10553401B2 (en) 2016-05-16 2020-02-04 Samsung Electronics Co., Ltd. Antenna, microwave plasma source including the same, plasma processing apparatus, and method of manufacturing semiconductor device

Also Published As

Publication number Publication date
KR20080037077A (ko) 2008-04-29
CN101347051B (zh) 2011-06-08
JP2007213994A (ja) 2007-08-23
CN101347051A (zh) 2009-01-14
WO2007091672A1 (ja) 2007-08-16
TW200810613A (en) 2008-02-16
JP4677918B2 (ja) 2011-04-27

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