KR101006264B1 - 근접 보정 및 검사를 위한 설계자의 의도 허용오차 대역 - Google Patents

근접 보정 및 검사를 위한 설계자의 의도 허용오차 대역 Download PDF

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Publication number
KR101006264B1
KR101006264B1 KR1020087009578A KR20087009578A KR101006264B1 KR 101006264 B1 KR101006264 B1 KR 101006264B1 KR 1020087009578 A KR1020087009578 A KR 1020087009578A KR 20087009578 A KR20087009578 A KR 20087009578A KR 101006264 B1 KR101006264 B1 KR 101006264B1
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South Korea
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design
layer
tolerance
layers
critical
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KR20080067624A (ko
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스콧 엠 맨스필드
라스 더블유. 리브만
이오아나 그라우어
아잘리아 크라스노페로바
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인터내셔널 비지네스 머신즈 코포레이션
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/398—Design verification or optimisation, e.g. using design rule check [DRC], layout versus schematics [LVS] or finite element methods [FEM]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2119/00—Details relating to the type or aim of the analysis or the optimisation
    • G06F2119/18—Manufacturability analysis or optimisation for manufacturability
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P90/00—Enabling technologies with a potential contribution to greenhouse gas [GHG] emissions mitigation
    • Y02P90/02—Total factory control, e.g. smart factories, flexible manufacturing systems [FMS] or integrated manufacturing systems [IMS]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Evolutionary Computation (AREA)
  • Geometry (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
KR1020087009578A 2005-10-12 2006-10-11 근접 보정 및 검사를 위한 설계자의 의도 허용오차 대역 Expired - Fee Related KR101006264B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/163,264 US7266798B2 (en) 2005-10-12 2005-10-12 Designer's intent tolerance bands for proximity correction and checking
US11/163,264 2005-10-12

Publications (2)

Publication Number Publication Date
KR20080067624A KR20080067624A (ko) 2008-07-21
KR101006264B1 true KR101006264B1 (ko) 2011-01-06

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KR1020087009578A Expired - Fee Related KR101006264B1 (ko) 2005-10-12 2006-10-11 근접 보정 및 검사를 위한 설계자의 의도 허용오차 대역

Country Status (7)

Country Link
US (2) US7266798B2 (enExample)
EP (1) EP1952289A4 (enExample)
JP (1) JP5243958B2 (enExample)
KR (1) KR101006264B1 (enExample)
CN (1) CN101288080B (enExample)
TW (1) TW200725348A (enExample)
WO (1) WO2007047298A1 (enExample)

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US7491594B2 (en) * 2005-10-26 2009-02-17 Freescale Semiconductor, Inc. Methods of generating planar double gate transistor shapes
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US7503028B2 (en) * 2006-01-10 2009-03-10 International Business Machines Corporation Multilayer OPC for design aware manufacturing
US7448008B2 (en) * 2006-08-29 2008-11-04 International Business Machines Corporation Method, system, and program product for automated verification of gating logic using formal verification
US7448018B2 (en) * 2006-09-12 2008-11-04 International Business Machines Corporation System and method for employing patterning process statistics for ground rules waivers and optimization
US7765518B2 (en) * 2008-03-20 2010-07-27 International Business Machines Corporation System and method for implementing optical rule checking to identify and quantify corner rounding errors
US8136054B2 (en) * 2009-01-29 2012-03-13 Synopsys, Inc. Compact abbe's kernel generation using principal component analysis
US20110047519A1 (en) * 2009-05-11 2011-02-24 Juan Andres Torres Robles Layout Content Analysis for Source Mask Optimization Acceleration
US8281263B2 (en) * 2009-12-17 2012-10-02 International Business Machines Corporation Propagating design tolerances to shape tolerances for lithography
US8331646B2 (en) 2009-12-23 2012-12-11 International Business Machines Corporation Optical proximity correction for transistors using harmonic mean of gate length
US8631379B2 (en) * 2010-02-09 2014-01-14 Taiwan Semiconductor Manufacturing Company, Ltd. Decomposing integrated circuit layout
US8392871B2 (en) 2010-04-30 2013-03-05 International Business Machines Corporation Decomposition with multiple exposures in a process window based OPC flow using tolerance bands
US8415077B2 (en) 2010-08-13 2013-04-09 International Business Machines Corporation Simultaneous optical proximity correction and decomposition for double exposure lithography
US8875063B2 (en) 2010-10-11 2014-10-28 International Business Machines Corporation Mask layout formation
US8381141B2 (en) * 2010-10-28 2013-02-19 International Business Machines Corporation Method and system for comparing lithographic processing conditions and or data preparation processes
US8298953B2 (en) 2010-12-20 2012-10-30 Infineon Technologies Ag Method for defining a separating structure within a semiconductor device
US8365108B2 (en) 2011-01-06 2013-01-29 International Business Machines Corporation Generating cut mask for double-patterning process
US9330223B2 (en) 2012-09-28 2016-05-03 International Business Machines Corporation Optical rule checking for detecting at risk structures for overlay issues
US9250535B2 (en) 2013-03-15 2016-02-02 International Business Machines Corporation Source, target and mask optimization by incorporating countour based assessments and integration over process variations
US9262578B2 (en) 2014-04-25 2016-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Method for integrated circuit manufacturing
CN108009352A (zh) * 2017-11-30 2018-05-08 上海华力微电子有限公司 一种光刻版图的填充流程及光刻掩膜的设计方法
CN113050389B (zh) * 2021-03-30 2022-12-02 长鑫存储技术有限公司 光刻工艺条件添加方法及装置、设计系统、介质和设备

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US20050216877A1 (en) 2002-07-12 2005-09-29 Cadence Design Systems, Inc. Method and system for context-specific mask writing

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KR970003508A (ko) * 1995-06-30 1997-01-28 김주용 반도체소자의 제조방법
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US5958635A (en) * 1997-10-20 1999-09-28 Motorola, Inc. Lithographic proximity correction through subset feature modification
US6557162B1 (en) * 2000-09-29 2003-04-29 Numerical Technologies, Inc. Method for high yield reticle formation
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JP4068541B2 (ja) 2003-09-25 2008-03-26 株式会社東芝 集積回路パターン検証装置と検証方法
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Also Published As

Publication number Publication date
CN101288080B (zh) 2012-05-23
US7607114B2 (en) 2009-10-20
EP1952289A4 (en) 2009-07-29
EP1952289A1 (en) 2008-08-06
CN101288080A (zh) 2008-10-15
TW200725348A (en) 2007-07-01
US20070261013A1 (en) 2007-11-08
WO2007047298A1 (en) 2007-04-26
JP5243958B2 (ja) 2013-07-24
KR20080067624A (ko) 2008-07-21
US7266798B2 (en) 2007-09-04
JP2009511988A (ja) 2009-03-19
US20070083847A1 (en) 2007-04-12

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