KR101001219B1 - 마스크 데이터의 생성방법, 마스크 제작방법, 노광방법, 디바이스 제조방법 및 기억매체 - Google Patents

마스크 데이터의 생성방법, 마스크 제작방법, 노광방법, 디바이스 제조방법 및 기억매체 Download PDF

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Publication number
KR101001219B1
KR101001219B1 KR1020080089643A KR20080089643A KR101001219B1 KR 101001219 B1 KR101001219 B1 KR 101001219B1 KR 1020080089643 A KR1020080089643 A KR 1020080089643A KR 20080089643 A KR20080089643 A KR 20080089643A KR 101001219 B1 KR101001219 B1 KR 101001219B1
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KR
South Korea
Prior art keywords
pattern
mask
optical system
aerial image
peak portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020080089643A
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English (en)
Korean (ko)
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KR20090030216A (ko
Inventor
미요코 카와시마
Original Assignee
캐논 가부시끼가이샤
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Publication of KR20090030216A publication Critical patent/KR20090030216A/ko
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Publication of KR101001219B1 publication Critical patent/KR101001219B1/ko
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
KR1020080089643A 2007-09-19 2008-09-11 마스크 데이터의 생성방법, 마스크 제작방법, 노광방법, 디바이스 제조방법 및 기억매체 Expired - Fee Related KR101001219B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2007-00242911 2007-09-19
JP2007242911 2007-09-19
JP2008041489A JP2009093138A (ja) 2007-09-19 2008-02-22 原版データの生成方法、原版作成方法、露光方法、デバイス製造方法及び原版データを作成するためのプログラム
JPJP-P-2008-00041489 2008-02-22

Publications (2)

Publication Number Publication Date
KR20090030216A KR20090030216A (ko) 2009-03-24
KR101001219B1 true KR101001219B1 (ko) 2010-12-15

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KR1020080089643A Expired - Fee Related KR101001219B1 (ko) 2007-09-19 2008-09-11 마스크 데이터의 생성방법, 마스크 제작방법, 노광방법, 디바이스 제조방법 및 기억매체

Country Status (4)

Country Link
JP (2) JP2009093138A (https=)
KR (1) KR101001219B1 (https=)
DE (1) DE602008005223D1 (https=)
TW (1) TWI371701B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5665398B2 (ja) * 2009-08-10 2015-02-04 キヤノン株式会社 生成方法、作成方法、露光方法、デバイスの製造方法及びプログラム
JP5279745B2 (ja) * 2010-02-24 2013-09-04 株式会社東芝 マスクレイアウト作成方法、マスクレイアウト作成装置、リソグラフィ用マスクの製造方法、半導体装置の製造方法、およびコンピュータが実行可能なプログラム
JP5603685B2 (ja) * 2010-07-08 2014-10-08 キヤノン株式会社 生成方法、作成方法、露光方法、デバイスの製造方法及びプログラム
JP5627394B2 (ja) * 2010-10-29 2014-11-19 キヤノン株式会社 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
JP6039910B2 (ja) 2012-03-15 2016-12-07 キヤノン株式会社 生成方法、プログラム及び情報処理装置
JP5677356B2 (ja) 2012-04-04 2015-02-25 キヤノン株式会社 マスクパターンの生成方法
JP5656905B2 (ja) 2012-04-06 2015-01-21 キヤノン株式会社 決定方法、プログラム及び情報処理装置
KR101694275B1 (ko) * 2013-03-14 2017-01-23 에이에스엠엘 네델란즈 비.브이. 패터닝 디바이스, 기판에 마커를 생성하는 방법 및 디바이스 제조 방법
JP6192372B2 (ja) 2013-06-11 2017-09-06 キヤノン株式会社 マスクパターンの作成方法、プログラムおよび情報処理装置
JP6307367B2 (ja) * 2014-06-26 2018-04-04 株式会社ニューフレアテクノロジー マスク検査装置、マスク評価方法及びマスク評価システム

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3576791B2 (ja) * 1998-03-16 2004-10-13 株式会社東芝 マスクパターン設計方法
SG137657A1 (en) * 2002-11-12 2007-12-28 Asml Masktools Bv Method and apparatus for performing model-based layout conversion for use with dipole illumination
SG139530A1 (en) * 2003-01-14 2008-02-29 Asml Masktools Bv Method of optical proximity correction design for contact hole mask
US7247574B2 (en) * 2003-01-14 2007-07-24 Asml Masktools B.V. Method and apparatus for providing optical proximity features to a reticle pattern for deep sub-wavelength optical lithography
US7376930B2 (en) * 2003-06-30 2008-05-20 Asml Masktools B.V. Method, program product and apparatus for generating assist features utilizing an image field map
SG109607A1 (en) * 2003-09-05 2005-03-30 Asml Masktools Bv Method and apparatus for performing model based placement of phase-balanced scattering bars for sub-wavelength optical lithography
SG125970A1 (en) * 2003-12-19 2006-10-30 Asml Masktools Bv Feature optimization using interference mapping lithography
US7620930B2 (en) * 2004-08-24 2009-11-17 Asml Masktools B.V. Method, program product and apparatus for model based scattering bar placement for enhanced depth of focus in quarter-wavelength lithography
US7349066B2 (en) * 2005-05-05 2008-03-25 Asml Masktools B.V. Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbor influence
JP5235322B2 (ja) * 2006-07-12 2013-07-10 キヤノン株式会社 原版データ作成方法及び原版データ作成プログラム

Also Published As

Publication number Publication date
KR20090030216A (ko) 2009-03-24
JP2009093138A (ja) 2009-04-30
JP2013011898A (ja) 2013-01-17
TWI371701B (en) 2012-09-01
JP5188644B2 (ja) 2013-04-24
TW200931290A (en) 2009-07-16
DE602008005223D1 (de) 2011-04-14

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