KR101001083B1 - 게이트 전극 구조물들 및 제조 방법 - Google Patents

게이트 전극 구조물들 및 제조 방법 Download PDF

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KR101001083B1
KR101001083B1 KR1020087003802A KR20087003802A KR101001083B1 KR 101001083 B1 KR101001083 B1 KR 101001083B1 KR 1020087003802 A KR1020087003802 A KR 1020087003802A KR 20087003802 A KR20087003802 A KR 20087003802A KR 101001083 B1 KR101001083 B1 KR 101001083B1
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South Korea
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metal region
metal
work function
thickness
region
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Expired - Fee Related
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Korean (ko)
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KR20080032197A (ko
Inventor
스티븐 헝
게리 마이너
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0172—Manufacturing their gate conductors
    • H10D84/0177—Manufacturing their gate conductors the gate conductors having different materials or different implants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0181—Manufacturing their gate insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28158—Making the insulator
    • H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
    • H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1020087003802A 2005-07-20 2006-07-12 게이트 전극 구조물들 및 제조 방법 Expired - Fee Related KR101001083B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/185,180 US7317229B2 (en) 2005-07-20 2005-07-20 Gate electrode structures and methods of manufacture
US11/185,180 2005-07-20

Publications (2)

Publication Number Publication Date
KR20080032197A KR20080032197A (ko) 2008-04-14
KR101001083B1 true KR101001083B1 (ko) 2010-12-14

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Country Status (6)

Country Link
US (2) US7317229B2 (enExample)
EP (1) EP1905095A4 (enExample)
JP (2) JP5743377B2 (enExample)
KR (1) KR101001083B1 (enExample)
TW (1) TWI361488B (enExample)
WO (1) WO2007018944A2 (enExample)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6551929B1 (en) * 2000-06-28 2003-04-22 Applied Materials, Inc. Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques
US7405158B2 (en) * 2000-06-28 2008-07-29 Applied Materials, Inc. Methods for depositing tungsten layers employing atomic layer deposition techniques
US7101795B1 (en) * 2000-06-28 2006-09-05 Applied Materials, Inc. Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US7081271B2 (en) 2001-12-07 2006-07-25 Applied Materials, Inc. Cyclical deposition of refractory metal silicon nitride
US6972267B2 (en) * 2002-03-04 2005-12-06 Applied Materials, Inc. Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor
US7067439B2 (en) 2002-06-14 2006-06-27 Applied Materials, Inc. ALD metal oxide deposition process using direct oxidation
EP1420080A3 (en) 2002-11-14 2005-11-09 Applied Materials, Inc. Apparatus and method for hybrid chemical deposition processes
US20050252449A1 (en) 2004-05-12 2005-11-17 Nguyen Son T Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system
US8119210B2 (en) * 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US20070020890A1 (en) * 2005-07-19 2007-01-25 Applied Materials, Inc. Method and apparatus for semiconductor processing
KR100672731B1 (ko) * 2005-10-04 2007-01-24 동부일렉트로닉스 주식회사 반도체 소자의 금속배선 형성방법
KR101019293B1 (ko) * 2005-11-04 2011-03-07 어플라이드 머티어리얼스, 인코포레이티드 플라즈마-강화 원자층 증착 장치 및 방법
US7837838B2 (en) * 2006-03-09 2010-11-23 Applied Materials, Inc. Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus
US7678710B2 (en) * 2006-03-09 2010-03-16 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US7645710B2 (en) * 2006-03-09 2010-01-12 Applied Materials, Inc. Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system
US20070252299A1 (en) * 2006-04-27 2007-11-01 Applied Materials, Inc. Synchronization of precursor pulsing and wafer rotation
US7798096B2 (en) * 2006-05-05 2010-09-21 Applied Materials, Inc. Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool
US20070259111A1 (en) * 2006-05-05 2007-11-08 Singh Kaushal K Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric film
JP5558815B2 (ja) * 2006-06-30 2014-07-23 アプライド マテリアルズ インコーポレイテッド ナノ結晶の形成
US7902018B2 (en) * 2006-09-26 2011-03-08 Applied Materials, Inc. Fluorine plasma treatment of high-k gate stack for defect passivation
US7812414B2 (en) * 2007-01-23 2010-10-12 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid process for forming metal gates
US7723798B2 (en) * 2007-08-07 2010-05-25 International Business Machines Corporation Low power circuit structure with metal gate and high-k dielectric
US7678298B2 (en) * 2007-09-25 2010-03-16 Applied Materials, Inc. Tantalum carbide nitride materials by vapor deposition processes
US7585762B2 (en) * 2007-09-25 2009-09-08 Applied Materials, Inc. Vapor deposition processes for tantalum carbide nitride materials
US7824743B2 (en) * 2007-09-28 2010-11-02 Applied Materials, Inc. Deposition processes for titanium nitride barrier and aluminum
US8536660B2 (en) * 2008-03-12 2013-09-17 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid process for forming metal gates of MOS devices
US8138076B2 (en) * 2008-05-12 2012-03-20 Taiwan Semiconductor Manufacturing Co., Ltd. MOSFETs having stacked metal gate electrodes and method
US8445947B2 (en) * 2008-07-04 2013-05-21 Stmicroelectronics (Rousset) Sas Electronic circuit having a diode-connected MOS transistor with an improved efficiency
US8491967B2 (en) * 2008-09-08 2013-07-23 Applied Materials, Inc. In-situ chamber treatment and deposition process
US20100062149A1 (en) * 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US8129280B2 (en) * 2009-07-24 2012-03-06 Applied Materials, Inc. Substrate device having a tuned work function and methods of forming thereof
KR101850703B1 (ko) 2011-05-17 2018-04-23 삼성전자 주식회사 반도체 장치 및 그 제조 방법
US9136180B2 (en) * 2011-06-01 2015-09-15 Asm Ip Holding B.V. Process for depositing electrode with high effective work function
US8987080B2 (en) 2012-04-26 2015-03-24 Applied Materials, Inc. Methods for manufacturing metal gates
CN104766823A (zh) * 2014-01-07 2015-07-08 中国科学院微电子研究所 半导体器件制造方法
KR102190673B1 (ko) * 2014-03-12 2020-12-14 삼성전자주식회사 중간갭 일함수 금속 게이트 전극을 갖는 반도체 소자
US9490255B1 (en) 2015-12-01 2016-11-08 International Business Machines Corporation Complementary metal oxide semiconductor replacement gate high-k metal gate devices with work function adjustments
CN105957490B (zh) * 2016-07-13 2019-03-01 武汉华星光电技术有限公司 驱动电路及具有该驱动电路的液晶显示器
US10276411B2 (en) 2017-08-18 2019-04-30 Applied Materials, Inc. High pressure and high temperature anneal chamber
SG11202008268RA (en) 2018-03-19 2020-10-29 Applied Materials Inc Methods for depositing coatings on aerospace components
EP3784815A4 (en) 2018-04-27 2021-11-03 Applied Materials, Inc. PROTECTION OF COMPONENTS AGAINST CORROSION
US11009339B2 (en) 2018-08-23 2021-05-18 Applied Materials, Inc. Measurement of thickness of thermal barrier coatings using 3D imaging and surface subtraction methods for objects with complex geometries
US10636705B1 (en) 2018-11-29 2020-04-28 Applied Materials, Inc. High pressure annealing of metal gate structures
EP3959356A4 (en) 2019-04-26 2023-01-18 Applied Materials, Inc. METHOD OF PROTECTING AEROSPACE COMPONENTS AGAINST CORROSION AND OXIDATION
US11794382B2 (en) 2019-05-16 2023-10-24 Applied Materials, Inc. Methods for depositing anti-coking protective coatings on aerospace components
US11697879B2 (en) 2019-06-14 2023-07-11 Applied Materials, Inc. Methods for depositing sacrificial coatings on aerospace components
US11466364B2 (en) 2019-09-06 2022-10-11 Applied Materials, Inc. Methods for forming protective coatings containing crystallized aluminum oxide
US11519066B2 (en) 2020-05-21 2022-12-06 Applied Materials, Inc. Nitride protective coatings on aerospace components and methods for making the same
CN115734826A (zh) 2020-07-03 2023-03-03 应用材料公司 用于翻新航空部件的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040010626A1 (en) 2002-07-11 2004-01-15 Gillam Richard James System and method of processing transactions off-line
US20050032342A1 (en) 2002-08-22 2005-02-10 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5186718A (en) 1989-05-19 1993-02-16 Applied Materials, Inc. Staged-vacuum wafer processing system and method
JPH10303412A (ja) * 1997-04-22 1998-11-13 Sony Corp 半導体装置及びその製造方法
US6287965B1 (en) 1997-07-28 2001-09-11 Samsung Electronics Co, Ltd. Method of forming metal layer using atomic layer deposition and semiconductor device having the metal layer as barrier metal layer or upper or lower electrode of capacitor
JP3287403B2 (ja) * 1999-02-19 2002-06-04 日本電気株式会社 Ｍｉｓ型電界効果トランジスタ及びその製造方法
US6635939B2 (en) 1999-08-24 2003-10-21 Micron Technology, Inc. Boron incorporated diffusion barrier material
JP2001093986A (ja) * 1999-09-27 2001-04-06 Toyota Autom Loom Works Ltd Ｍｏｓデバイス、及びその製造方法
US6373111B1 (en) 1999-11-30 2002-04-16 Intel Corporation Work function tuning for MOSFET gate electrodes
US6551399B1 (en) 2000-01-10 2003-04-22 Genus Inc. Fully integrated process for MIM capacitors using atomic layer deposition
US6448590B1 (en) 2000-10-24 2002-09-10 International Business Machines Corporation Multiple threshold voltage FET using multiple work-function gate materials
KR20020056260A (ko) * 2000-12-29 2002-07-10 박종섭 반도체 소자의 금속 게이트 형성방법
JP2003023152A (ja) * 2001-07-10 2003-01-24 Sony Corp Ｍｉｓ型トランジスタ及びその製造方法
JP2003273350A (ja) * 2002-03-15 2003-09-26 Nec Corp 半導体装置及びその製造方法
US6875271B2 (en) 2002-04-09 2005-04-05 Applied Materials, Inc. Simultaneous cyclical deposition in different processing regions
US6872827B2 (en) 2002-04-26 2005-03-29 Chembridge Research Laboratories, Inc. Somatostatin analogue compounds
US6784096B2 (en) 2002-09-11 2004-08-31 Applied Materials, Inc. Methods and apparatus for forming barrier layers in high aspect ratio vias
US20040050325A1 (en) 2002-09-12 2004-03-18 Samoilov Arkadii V. Apparatus and method for delivering process gas to a substrate processing system
US7045406B2 (en) * 2002-12-03 2006-05-16 Asm International, N.V. Method of forming an electrode with adjusted work function
US6861712B2 (en) * 2003-01-15 2005-03-01 Sharp Laboratories Of America, Inc. MOSFET threshold voltage tuning with metal gate stack control
US20040198069A1 (en) 2003-04-04 2004-10-07 Applied Materials, Inc. Method for hafnium nitride deposition
KR100524197B1 (ko) 2003-04-29 2005-10-27 삼성전자주식회사 매엽식 반도체 소자 제조장치 및 이를 이용한 게이트 전극및 콘택 전극의 연속 형성방법
US6943097B2 (en) 2003-08-19 2005-09-13 International Business Machines Corporation Atomic layer deposition of metallic contacts, gates and diffusion barriers
US6818517B1 (en) 2003-08-29 2004-11-16 Asm International N.V. Methods of depositing two or more layers on a substrate in situ
JP4085051B2 (ja) * 2003-12-26 2008-04-30 株式会社東芝 半導体装置およびその製造方法
JP2005244186A (ja) * 2004-02-23 2005-09-08 Sharp Corp 反応性ゲート電極導電性バリア

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040010626A1 (en) 2002-07-11 2004-01-15 Gillam Richard James System and method of processing transactions off-line
US20050032342A1 (en) 2002-08-22 2005-02-10 Micron Technology, Inc. Atomic layer deposition of CMOS gates with variable work functions

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JP2014078734A (ja) 2014-05-01
EP1905095A4 (en) 2009-07-01
TWI361488B (en) 2012-04-01
WO2007018944A3 (en) 2008-01-17
US20080142893A1 (en) 2008-06-19
KR20080032197A (ko) 2008-04-14
JP5754715B2 (ja) 2015-07-29
JP2009503817A (ja) 2009-01-29
EP1905095A2 (en) 2008-04-02
US7541650B2 (en) 2009-06-02
US20070018244A1 (en) 2007-01-25
TW200802852A (en) 2008-01-01
US7317229B2 (en) 2008-01-08
JP5743377B2 (ja) 2015-07-01
WO2007018944A2 (en) 2007-02-15

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