KR100967923B1 - 기판 처리 장치 및 기판 처리 방법 - Google Patents

기판 처리 장치 및 기판 처리 방법 Download PDF

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Publication number
KR100967923B1
KR100967923B1 KR1020080003358A KR20080003358A KR100967923B1 KR 100967923 B1 KR100967923 B1 KR 100967923B1 KR 1020080003358 A KR1020080003358 A KR 1020080003358A KR 20080003358 A KR20080003358 A KR 20080003358A KR 100967923 B1 KR100967923 B1 KR 100967923B1
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KR
South Korea
Prior art keywords
conductive layer
substrate
film
insulating substrate
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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KR1020080003358A
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English (en)
Korean (ko)
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KR20080067965A (ko
Inventor
타쿠야 스가와라
Original Assignee
도쿄엘렉트론가부시키가이샤
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Publication of KR20080067965A publication Critical patent/KR20080067965A/ko
Application granted granted Critical
Publication of KR100967923B1 publication Critical patent/KR100967923B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

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  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020080003358A 2007-01-17 2008-01-11 기판 처리 장치 및 기판 처리 방법 Expired - Fee Related KR100967923B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007008306A JP4361568B2 (ja) 2007-01-17 2007-01-17 基板処理装置および基板処理方法
JPJP-P-2007-00008306 2007-01-17

Publications (2)

Publication Number Publication Date
KR20080067965A KR20080067965A (ko) 2008-07-22
KR100967923B1 true KR100967923B1 (ko) 2010-07-06

Family

ID=39704110

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080003358A Expired - Fee Related KR100967923B1 (ko) 2007-01-17 2008-01-11 기판 처리 장치 및 기판 처리 방법

Country Status (4)

Country Link
JP (1) JP4361568B2 (https=)
KR (1) KR100967923B1 (https=)
CN (1) CN101226877B (https=)
TW (1) TW200849455A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100988667B1 (ko) 2009-01-23 2010-10-18 장석호 발전 효율과 회전력 향상이 이루어진 발전장치
WO2011104740A1 (ja) * 2010-02-23 2011-09-01 株式会社テオス Ｃｖｄ処理方法およびその方法を使用するｃｖｄ装置
JP5902073B2 (ja) * 2012-09-25 2016-04-13 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
CN107217240A (zh) * 2017-07-11 2017-09-29 江苏星特亮科技有限公司 一种石墨烯薄膜的制备方法
CN109402575A (zh) * 2018-12-27 2019-03-01 北京铂阳顶荣光伏科技有限公司 基座以及蒸镀设备

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235391A (ja) * 1991-03-07 1993-09-10 Mitsubishi Electric Corp 薄膜太陽電池及びその製造方法並びに半導体装置の製造方法
JPH1126470A (ja) * 1997-07-08 1999-01-29 Sony Corp 半導体基板、半導体装置および太陽電池、半導体基板の製造方法および薄膜半導体の製造方法、半導体基板に対する処理装置
JP2005294033A (ja) * 2004-03-31 2005-10-20 Matsushita Electric Works Ltd 電子源装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235391A (ja) * 1991-03-07 1993-09-10 Mitsubishi Electric Corp 薄膜太陽電池及びその製造方法並びに半導体装置の製造方法
JPH1126470A (ja) * 1997-07-08 1999-01-29 Sony Corp 半導体基板、半導体装置および太陽電池、半導体基板の製造方法および薄膜半導体の製造方法、半導体基板に対する処理装置
JP2005294033A (ja) * 2004-03-31 2005-10-20 Matsushita Electric Works Ltd 電子源装置

Also Published As

Publication number Publication date
CN101226877B (zh) 2010-12-01
CN101226877A (zh) 2008-07-23
TW200849455A (en) 2008-12-16
KR20080067965A (ko) 2008-07-22
JP2008177289A (ja) 2008-07-31
JP4361568B2 (ja) 2009-11-11
TWI353649B (https=) 2011-12-01

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