JP4361568B2 - 基板処理装置および基板処理方法 - Google Patents

基板処理装置および基板処理方法 Download PDF

Info

Publication number
JP4361568B2
JP4361568B2 JP2007008306A JP2007008306A JP4361568B2 JP 4361568 B2 JP4361568 B2 JP 4361568B2 JP 2007008306 A JP2007008306 A JP 2007008306A JP 2007008306 A JP2007008306 A JP 2007008306A JP 4361568 B2 JP4361568 B2 JP 4361568B2
Authority
JP
Japan
Prior art keywords
conductive layer
substrate
substrate processing
film
insulating substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007008306A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008177289A (ja
JP2008177289A5 (https=
Inventor
卓也 菅原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2007008306A priority Critical patent/JP4361568B2/ja
Priority to TW097100472A priority patent/TW200849455A/zh
Priority to KR1020080003358A priority patent/KR100967923B1/ko
Priority to CN2008100023991A priority patent/CN101226877B/zh
Publication of JP2008177289A publication Critical patent/JP2008177289A/ja
Publication of JP2008177289A5 publication Critical patent/JP2008177289A5/ja
Application granted granted Critical
Publication of JP4361568B2 publication Critical patent/JP4361568B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2007008306A 2007-01-17 2007-01-17 基板処理装置および基板処理方法 Expired - Fee Related JP4361568B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2007008306A JP4361568B2 (ja) 2007-01-17 2007-01-17 基板処理装置および基板処理方法
TW097100472A TW200849455A (en) 2007-01-17 2008-01-04 Apparatus and method for processing substrate
KR1020080003358A KR100967923B1 (ko) 2007-01-17 2008-01-11 기판 처리 장치 및 기판 처리 방법
CN2008100023991A CN101226877B (zh) 2007-01-17 2008-01-17 基板处理装置及基板处理方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007008306A JP4361568B2 (ja) 2007-01-17 2007-01-17 基板処理装置および基板処理方法

Publications (3)

Publication Number Publication Date
JP2008177289A JP2008177289A (ja) 2008-07-31
JP2008177289A5 JP2008177289A5 (https=) 2008-10-02
JP4361568B2 true JP4361568B2 (ja) 2009-11-11

Family

ID=39704110

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007008306A Expired - Fee Related JP4361568B2 (ja) 2007-01-17 2007-01-17 基板処理装置および基板処理方法

Country Status (4)

Country Link
JP (1) JP4361568B2 (https=)
KR (1) KR100967923B1 (https=)
CN (1) CN101226877B (https=)
TW (1) TW200849455A (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100988667B1 (ko) 2009-01-23 2010-10-18 장석호 발전 효율과 회전력 향상이 이루어진 발전장치
WO2011104740A1 (ja) * 2010-02-23 2011-09-01 株式会社テオス Ｃｖｄ処理方法およびその方法を使用するｃｖｄ装置
JP5902073B2 (ja) * 2012-09-25 2016-04-13 株式会社日立国際電気 半導体装置の製造方法、基板処理方法及び基板処理装置
CN107217240A (zh) * 2017-07-11 2017-09-29 江苏星特亮科技有限公司 一种石墨烯薄膜的制备方法
CN109402575A (zh) * 2018-12-27 2019-03-01 北京铂阳顶荣光伏科技有限公司 基座以及蒸镀设备

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05235391A (ja) * 1991-03-07 1993-09-10 Mitsubishi Electric Corp 薄膜太陽電池及びその製造方法並びに半導体装置の製造方法
JPH1126470A (ja) * 1997-07-08 1999-01-29 Sony Corp 半導体基板、半導体装置および太陽電池、半導体基板の製造方法および薄膜半導体の製造方法、半導体基板に対する処理装置
JP4433858B2 (ja) * 2004-03-31 2010-03-17 パナソニック電工株式会社 電子源装置

Also Published As

Publication number Publication date
CN101226877B (zh) 2010-12-01
CN101226877A (zh) 2008-07-23
TW200849455A (en) 2008-12-16
KR20080067965A (ko) 2008-07-22
KR100967923B1 (ko) 2010-07-06
JP2008177289A (ja) 2008-07-31
TWI353649B (https=) 2011-12-01

Similar Documents

Publication Publication Date Title
KR101103453B1 (ko) 가열 장치 및 이의 제조 방법
Yang et al. Improved optical sintering efficiency at the contacts of silver nanowires encapsulated by a graphene layer
JP4361568B2 (ja) 基板処理装置および基板処理方法
JP5718572B2 (ja) 薄層を堆積させる方法、およびこのように得られた製品
JP5236405B2 (ja) 透明電極膜の改質方法及び透明電極膜付基板の製造方法
TW200816362A (en) Heating and cooling of substrate support
EP2727161A1 (en) Techniques for manufacturing planar patterned transparent contact and/or electronic devices including same
JP2003318182A (ja) 低温下における半導体フィルムの加熱処理装置
CN101395706A (zh) 利用焦耳加热晶化非晶硅的方法
Liao et al. Oxygen-deficient indium tin oxide thin films annealed by atmospheric pressure plasma jets with/without air-quenching
CN104871258B (zh) 带透明电极的基板及其制造方法
JP4110752B2 (ja) 基材上に設けた透明導電膜を低抵抗化する方法。
TWI362704B (en) Method for annealing silicon thin films using conductive layer and polycrystalline silicon thin films prepared therefrom
KR20200037547A (ko) 금속나노입자가 전사된 투명 면상 발열필름 및 이의 제조방법
US20120073640A1 (en) Pulsed photothermal phase transformation control for titanium oxide structures and reversible bandgap shift for solar absorption
Choe et al. Influence of Ag interlayer thickness on the optical, electrical and mechanical properties of Ti-doped In 2 O 3/Ag/Ti-doped In 2 O 3 multilayer flexible transparent conductive electrode
KR20170123111A (ko) 줄열 가열 방식을 사용한 그래핀층의 제조 방법
TW201025455A (en) Method and apparatus for manufacturing semiconductor device
JP2017193755A (ja) 透明導電膜の製造方法、及び透明導電膜
US20060046360A1 (en) Method of fabricating thin film transistor
JP2016527688A (ja) 銀をディウェッティングさせることによるゲート電極の製造
JPH0325880A (ja) 加熱方法及び加熱装置
KR101293212B1 (ko) ＭｏＳｉ２ 발열체 제조방법 및 이에 의해 제조된 ＭｏＳｉ２ 발열체를 포함하는 노
JP2011029148A (ja) 導電性金属酸化物の後処理方法及び成膜兼後処理装置
CN102575343B (zh) 催化cvd装置、膜的形成方法、太阳能电池的制造方法和基材的保持体

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080815

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080815

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090108

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090203

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090403

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090811

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090812

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120821

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150821

Year of fee payment: 6

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees